Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com Report Title: Qualification Test Report Report Type: See Attached Date: See Attached QTR: 2013- 00247 Wafer Process: MESFET-F HMC156A HMC165 HMC172 HMC182 HMC183 HMC187A HMC189A HMC194 HMC207A HMC213A HMC214 HMC219A HMC221A HMC222 HMC230 HMC231 HMC232 HMC233 HMC234 HMC241 HMC244 HMC245 HMC252 HMC253 HMC270 HMC271A HMC271 HMC273 HMC274 HMC276 HMC277 HMC278 HMC279 HMC280 HMC284 HMC286 HMC287 HMC288 HMC290 HMC291 HMC304 HMC305A HMC305 HMC306 HMC307 HMC308 HMC310 HMC316 HMC318 HMC320 Rev: 06 HMC321 HMC322 HMC332 HMC333 HMC335 HMC336 HMC344 HMC345 HMC346 HMC347 HMC348 HMC349 HMC350 HMC351 HMC352 HMC353 HMC377 HMC380 HMC387 HMC392 HMC393 HMC399 HMC400 HMC402 HMC410A HMC412 HMC420 HMC421 HMC422 HMC423 HMC424 HMC425 HMC427 HMC435 HMC467 HMC468 HMC470 HMC472 HMC483 HMC485 HMC488 HMC491 HMC538 HMC539 HMC540 HMC541 HMC542A HMC542 HMC547 HMC551 HMC552 HMC581 HMC585 HMC607 HMC615 HMC621 HMC622 HMC623 HMC626 HMC665 HMC681 HMC712 HMC742 HMC743 HMC915 HMC944 HMC972 HMC973 HMC985 HMC6982 QTR: 2013- 00247 Wafer Process: MESFET-F Rev: 06 Introduction The testing performed for this report is designed to accelerate the predominant failure mode, electro-migration (EM), for the devices under test. The devices are stressed at high temperature and DC biased to simulate a lifetime of use at typical operating temperatures. Using the Arrhenius equation, the acceleration factor (AF) is calculated for the stress testing based on the stress temperature and the typical use operating temperature. This report is intended to summarize all of the High Temperature Operating Life Test (HTOL) data for the MESFET-F process. The FIT/MTTF data contained in this report includes all the stress testing performed on this process to date and will be updated periodically as additional data becomes available. Data sheets for the tested devices can be found at www.hittite.com. Glossary of Terms & Definitions: 1. ESD: Electro-Static Discharge. A sudden transfer of electrostatic charge between bodies or surfaces at different electrostatic potentials. 2. HBM: Human Body Model. A specified ESD testing circuit characterizing an event that occurs when a device is subjected to an electro-static charge stored in the human body and discharged through handling of the electronic device. This test was performed in accordance with JEDEC 22-A114. 3. HTOL: High Temperature Operating Life. This test is used to determine the effects of bias conditions and temperature on semiconductor devices over time. It simulates the devices’ operating condition in an accelerated way, through high temperature and/or bias voltage, and is primarily for device qualification and reliability monitoring. This test was performed in accordance with JEDEC JESD22-A108. 4. HTSL: High Temperature Storage Life. Devices are subjected to 1000 hours at 150oC per JESD22-A103. 5. Operating Junction Temp (Toj): Temperature of the die active circuitry during typical operation. 6. Stress Junction Temp (Tsj): Temperature of the die active circuitry during stress testing. QTR: 2013- 00247 Wafer Process: MESFET-F Rev: 06 Qualification Sample Selection: All qualification devices used were manufactured and tested on standard production processes and met pre-stress acceptance test requirements. Summary of Qualification Tests: HMC273 (QTR2002-00007) TEST Initial Electrical HTOL, 1240 hours Post HTOL Electrical Test Bond Pull Die Shear SEM Inspection Metal and Dielectric Thickness QTY IN 33 35 33 35 33 35 5 10 10 5 5 5 5 QTY OUT 33 35 33 35 33 35 5 10 10 5 5 5 5 PASS/FAIL Complete NOTES HMC273 HMC424 Complete Pass Pass Pass Pass Pass HMC424 QTR: 2013- 00247 Wafer Process: MESFET-F Rev: 06 HMC424 (QTR2002-00007) TEST Initial Electrical HTOL, 620 hours Post HTOL Electrical Test Bond Pull Die Shear SEM Inspection Metal and Dielectric Thickness QTY IN 33 35 33 35 33 35 5 10 10 5 5 5 5 QTY OUT 33 35 33 35 33 35 5 10 10 5 5 5 5 PASS/FAIL Complete NOTES HMC273 HMC424 Complete Pass Pass Pass Pass Pass HMC424 QTR: 2013- 00247 Wafer Process: MESFET-F Rev: 06 HMC2416, 2417 (QTR2002-00011) TEST QTY IN 89 54 89 54 89 54 10 10 10 10 10 10 10 10 QTY OUT 89 54 89 54 89 54 10 10 10 10 10 10 10 10 PASS/FAIL QTY IN QTY OUT PASS/FAIL Initial Electrical 23 23 Complete HTOL, 1240 hours 23 23 Complete Post HTOL Electrical Test 23 10 10 10 10 10 10 10 10 23 10 10 10 10 10 10 10 10 Pass Initial Electrical HTOL, 1240 hours Post HTOL Electrical Test Bond Pull Die Shear SEM Inspection Metal and Dielectric Thickness Complete NOTES HMC2416 HMC2417 Complete Pass Pass Pass Pass Pass HMC2402 (QTR2002-00014) TEST Bond Pull Die Shear SEM Inspection Metal and Dielectric Thickness Pass Pass Pass Pass NOTES HMC2402 QTR: 2013- 00247 Wafer Process: MESFET-F Rev: 06 HMC423 (QTR2004-00002) TEST QTY IN QTY OUT PASS/FAIL Initial Electrical 31 31 Complete HTOL, 2240 hours 31 31 Complete Post HTOL Electrical Test 31 31 Pass Bond Pull 10 10 Pass Die Shear 10 10 Pass SEM Inspection 5 5 Pass Metal and Dielectric Thickness 5 5 Pass QTY IN QTY OUT PASS/FAIL Initial Electrical 108 108 Complete HTOL, 1000 hours 108 108 Complete Post HTOL Electrical Test 108 108 Pass NOTES HMC423 HMC306 (QTR2006-00001) TEST NOTES QTR: 2013- 00247 Wafer Process: MESFET-F Rev: 06 HMC218A (QTR2011-00015) TEST QTY IN QTY OUT PASS/FAIL Initial Electrical 78 78 Complete HTOL, 1000 hours 78 78 Complete Post HTOL Electrical Test 78 78 Pass NOTES HMC915 (QTR2012-00022) TEST QTY IN QTY OUT PASS/FAIL Initial electrical Test 199 199 Pass HTSL, 1000 hours 80 80 Complete Final Electrical Test – Post HTSL 80 80 Pass HTOL, 1000 hours 80 80 Complete Final Electrical test – Post HTOL 80 80 Pass ESD Exposure 39 39 Complete Electrical Test – Post ESD 39 39 Complete NOTES HBM Class 1C CDM Class IV (2000V) MM Pass 100V QTR: 2013- 00247 Wafer Process: MESFET-F Rev: 06 HMC2165 (QTR2013-00339) TEST QTY IN QTY OUT PASS/FAIL Initial electrical Test 243 243 Pass HTOL, 1000 hours 243 243 Complete Final Electrical test – Post HTOL 243 243 Pass QTY IN QTY OUT PASS/FAIL Initial electrical Test 162 162 Pass HTOL, 1000 hours 162 162 Complete Final Electrical test – Post HTOL 162 162 Pass QTY IN QTY OUT PASS/FAIL Initial electrical Test 318 318 Pass HTOL, 1000 hours 318 318 Complete Final Electrical test – Post HTOL 318 318 Pass NOTES HMC2167 (QTR2013-00339) TEST NOTES HMC743 (QTR2013-00360) TEST NOTES QTR: 2013- 00247 Wafer Process: MESFET-F Rev: 06 HMC472 (QTR2013-00031) TEST QTY IN QTY OUT PASS/FAIL Initial electrical Test 264 264 Pass HTOL, 1000 hours 80 80 Complete Final Electrical Test – Post HTOL 80 80 Pass HTSL 80 80 Complete Final Electrical Test – Post HTSL 80 80 Pass MSL1 Precondition Final Electrical Test – Post MSL1 Precondition UHAST (Preconditioned) Final Electrical Test – Post UHAST ESD Exposure 80 80 Complete 80 80 Pass 80 80 Complete 80 80 Pass 24 24 Complete Post Electrical Test - ESD 24 24 Pass NOTES HBM Pass 500V CDM Pass 1000V QTR: 2013- 00247 Wafer Process: MESFET-F Rev: 06 MESFET-F Failure Rate Estimate Based on the HTOL test results, a failure rate estimation was determined using the following parameters: With Device Backside Operating Temp, TC = 85°C HMC273 (QTR2002-00007) Operating Junction Temp (Toj) =85°C(358°K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC424 (QTR2002-00007) Operating Junction Temp (Toj) =85°C(358°K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC2416, 2417 (QTR2002-00011) Operating Junction Temp (Toj) =85°C(358°K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC2402 (QTR2002-00014) Operating Junction Temp (Toj) =85°C(358°K) Stress Junction Temp (Tsj) = 100°C(373°K) HMC423 (QTR2004-00002) Operating Junction Temp (Toj) =85°C(358°K) Stress Junction Temp (Tsj) = 125°C(398°K) HMC306 (QTR2006-00001) Operating Junction Temp (Toj) =85°C(358°K) Stress Junction Temp (Tsj) = 125°C(398°K) HMC218A (QTR2011-00015) Operating Junction Temp (Toj) =85°C(358°K) Stress Junction Temp (Tsj) = 125°C(398°K) HMC915 (QTR2012-00022) Operating Junction Temp (Toj) =150°C(423°K) Stress Junction Temp (Tsj) = 150°C(423°K) QTR: 2013- 00247 Wafer Process: MESFET-F HMC2165 (QTR2013-00339) Operating Junction Temp (Toj) =101°C(374°K) Stress Junction Temp (Tsj) = 123°C(396°K) HMC2167 (QTR2013-00339) Operating Junction Temp (Toj) =104°C(377°K) Stress Junction Temp (Tsj) = 129°C(402°K) HMC743 (QTR2013-00360) Operating Junction Temp (Toj) =115°C(388°K) Stress Junction Temp (Tsj) = 141°C(414°K) HMC472 (QTR2013-00031) Operating Junction Temp (Toj) =89°C(362°K) Stress Junction Temp (Tsj) = 158°C(431°K) Device hours: HMC273 (QTR2002-00007) = (33 X 1240hrs) = 40,920 hours HMC424 (QTR2002-00007) = (35 X 620hrs) = 21,700 hours HMC2416, 2417 (QTR2002-00011) = (143 X 1240hrs) = 177,320 hours HMC2402 (QTR2002-00014) = (23 X 1240hrs) = 28,520 hours HMC423 (QTR2004-00002) = (31 X 2240hrs) = 69,440 hours HMC306 (QTR2006-00001) = (108 X 1000hrs) = 108,000 hours HMC218A (QTR2011-00015) = (78 X 1000hrs) = 78,000 hours HMC915 (QTR2012-00022) = (80 X 1000hrs) = 80,000 hours HMC2165 (QTR2013-00339) = (243 X 1000hrs) = 243,000 hours HMC2167 (QTR2013-00339) = (163 X 1000hrs) = 163,000 hours HMC743 (QTR2013-00360) = (318 X 1000hrs) = 318,000 hours HMC472 (QTR2013-00031) = (80 X 1000hrs) = 80,000 hours Rev: 06 QTR: 2013- 00247 Wafer Process: MESFET-F Rev: 06 For MESFET-F MMIC, Activation Energy = 1.6 eV Acceleration Factor (AF): HMC273 (QTR2002-00007) Acceleration Factor = exp[1.6/8.6x10-5(1/358-1/423)] = 2938.6 HMC424 (QTR2002-00007) Acceleration Factor = exp[1.6/8.6x10-5(1/358-1/423)] = 2938.6 HMC2416, 2417 (QTR2002-00011) Acceleration Factor = exp[1.6/8.6x10-5(1/358-1/423)] = 2938.6 HMC2402 (QTR2002-00014) Acceleration Factor = exp[1.6/8.6x10-5(1/358-1/373)] = 8.1 HMC423 (QTR2004-00002) Acceleration Factor = exp[1.6/8.6x10-5(1/358-1/398)] = 185.5 HMC306 (QTR2006-00001) Acceleration Factor = exp[1.6/8.6x10-5(1/358-1/398)] = 185.5 HMC218A (QTR2011-00015) Acceleration Factor = exp[1.6/8.6x10-5(1/358-1/398)] = 185.5 HMC915 (QTR2012-00022) Acceleration Factor = exp[1.6/8.6x10-5(1/423-1/423)] = 1.0 HMC2165 (QTR2013-00339) Acceleration Factor = exp[1.6/8.6x10-5(1/374-1/396)] = 15.9 HMC2167 (QTR2013-00339) Acceleration Factor = exp[1.6/8.6x10-5(1/377-1/402)] = 21.5 HMC743 (QTR2013-00360) Acceleration Factor = exp[1.6/8.6x10-5(1/388-1/414)] = 20.3 HMC472 (QTR2013-00031) Acceleration Factor = exp[1.6/8.6x10-5(1/362-1/431)] = 3743.7 Equivalent hours = Device hours x Acceleration Factor Equivalent hours = (40,920x2938.6)+(21,700x2938.6)+(177,320x2938.6)+ (28,520x8.1)+(69,440x185.5)+(108,000x185.5)+(78,000x185.5)+(80,000x1.0)+(243,000x15.9)+(163,000x21.5) +(318,000x20.3)+(80,000x3743.7) = 1.07x109 hours Since there were no failures and we used a time terminated test, F=0, and R = 2F+2 = 2 QTR: 2013- 00247 Wafer Process: MESFET-F Rev: 06 The failure rate was calculated using Chi Square Statistic: at 60% and 90% Confidence Level (CL), with 0 units out of spec and a 85°C package backside temp; Failure Rate 60 = [(2)60,2]/(2X 1.07x109 )] = 1.8/ 2.13x109 = 8.58x10-10 failures/hour or 0.9 FIT or MTTF = 1.17x109 Hours 90 = [(2)90,2]/(2X 1.07x109 )] = 4.6/ 2.13x109 = 2.16x10-9 failures/hour or 2.2 FIT or MTTF = 4.62x108 Hours