Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com Report Title: Qualification Test Report Report Type: See Attached Date: See Attached QTR: 2013- 00228 Wafer Process: GaAs HBT-A HMC247 HMC358 HMC361 HMC362 HMC363 HMC364 HMC365 HMC369 HMC370 HMC384 HMC385 HMC386 HMC388 HMC389 HMC390 HMC391 HMC394 HMC398 HMC401 HMC403 HMC416 HMC429 HMC430 HMC431 HMC432 HMC433 HMC434 HMC437 HMC438 HMC439 HMC440 HMC443 HMC444 HMC445 HMC447 HMC466 HMC492 HMC493 HMC494 HMC500 HMC505 HMC506 HMC507 HMC508 HMC509 HMC510 HMC511 HMC512 HMC513 HMC514 HMC515 HMC529 HMC530 HMC531 HMC532 HMC533 HMC534 HMC535 HMC582 HMC583 HMC584 HMC586 HMC587 HMC588 HMC606 HMC630 HMC631 HMC632 HMC695 HMC698 HMC699 HMC705 HMC732 HMC733 HMC734 Rev: 05 HMC735 HMC736 HMC737 HMC738 HMC739 HMC764 HMC765 HMC783 HMC807 HMC3587 HMC3653 HMC6380 QTR: 2013- 00228 Wafer Process: GaAs HBT-A Rev: 05 Introduction The testing performed for this report is designed to accelerate the predominant failure mode, electro-migration (EM), for the devices under test. The devices are stressed at high temperature and DC biased to simulate a lifetime of use at typical operating temperatures. Using the Arrhenius equation, the acceleration factor (AF) is calculated for the stress testing based on the stress temperature and the typical use operating temperature. This report is intended to summarize all of the High Temperature Operating Life Test (HTOL) data for the GaAs HBT-A process. The FIT/MTTF data contained in this report includes all the stress testing performed on this process to date and will be updated periodically as additional data becomes available. Data sheets for the tested devices can be found at www.hittite.com. Glossary of Terms & Definitions: 1. CDM: Charged Device Model. A specified ESD testing circuit characterizing an event that occurs when a device acquires charge through some triboelectric (frictional) or electrostatic induction processes and then abruptly touches a grounded object or surface. This test was performed in accordance with JEDEC 22-C101. 2. ESD: Electro-Static Discharge. A sudden transfer of electrostatic charge between bodies or surfaces at different electrostatic potentials. 3. HBM: Human Body Model. A specified ESD testing circuit characterizing an event that occurs when a device is subjected to an electro-static charge stored in the human body and discharged through handling of the electronic device. This test was performed in accordance with JEDEC 22-A114. 4. HTOL: High Temperature Operating Life. This test is used to determine the effects of bias conditions and temperature on semiconductor devices over time. It simulates the devices’ operating condition in an accelerated way, through high temperature and/or bias voltage, and is primarily for device qualification and reliability monitoring. This test was performed in accordance with JEDEC JESD22-A108. 5. HTSL: High Temperature Storage Life. Devices are subjected to 1000 hours at 150oC per JESD22-A103. 6. MSL: Moisture sensitivity level pre-conditioning is performed per JESD22-A113. 7. Operating Junction Temp (Toj): Temperature of the die active circuitry during typical operation. 8. Stress Junction Temp (Tsj): Temperature of the die active circuitry during stress testing. 9. UHAST: Unbiased Highly Accelerated Stress Test. Devices are subjected to 96 hours of 85% relative humidity at a temperature of 130C and pressure (15 PSIG). This test is performed in accordance with JESD22-A118. QTR: 2013- 00228 Wafer Process: GaAs HBT-A Rev: 05 Qualification Sample Selection: All qualification devices used were manufactured and tested on standard production processes and met pre-stress acceptance test requirements. Summary of Qualification Tests: HMC365 Qualification (QTR2004-00001) TEST QTY IN QTY OUT PASS/FAIL Initial Electrical 12 12 Complete HTOL, 1240 hours 12 12 Complete Post Electrical Test 12 12 Pass QTY IN QTY OUT PASS/FAIL Initial Electrical 12 12 Complete HTOL, 1000 hours 12 12 Complete Post Electrical Test 12 12 Pass NOTES HMC510 Qualification (QTR2011-00004) TEST NOTES QTR: 2013- 00228 Wafer Process: GaAs HBT-A Rev: 05 HMC511 Qualification (QTR2011-00013) TEST QTY IN QTY OUT PASS/FAIL Initial electrical Test 554 554 Pass MSL-3 554 554 Complete Final Electrical Test 554 554 Pass UHAST 80 80 Complete Final electrical Test 80 80 Pass Temp. Cycle 160 160 Complete Final electrical Test 160 160 Pass HTSL 137 137 Complete Final Electrical Test 137 137 Pass HTOL 159 159 Complete Final Electrical test 159 159 Pass Physical Dimensions 22 22 Pass NOTES Devices passed post MSL 3 CSAM. 80 units from NC94 80 units from lot MMCR 80 units from lot NC94 61 units from lot MMCR 76 units from lot NC94 80 units from lot MMCR 79 units from lot NC94 All dimensions passed per Hittite's datasheet outline drawing. QTR: 2013- 00228 Wafer Process: GaAs HBT-A TEST QTY IN QTY OUT PASS/FAIL 4 4 Pass 3 per Voltage Level 3 per Voltage Level 3 per Voltage Level 3 per Voltage Level Solderability ESD Exposure Electrical Test Rev: 05 Complete Class II NOTES Note: Data from previously tested units from a different lot. Two units were tested to JESD22-B102E Method 1 and 2 units to Method 2. Devices tested from lot NC94 CDM passed 250 Volts HMC416 QTR2012-00198 TEST QTY IN QTY OUT PASS/FAIL Initial electrical Test 24 24 Pass HTOL, 1000 hours 24 24 Complete Final Electrical test 24 24 Pass NOTES QTR: 2013- 00228 Wafer Process: GaAs HBT-A Rev: 05 HMC361 QTR2012-00255 TEST QTY IN QTY OUT PASS/FAIL Initial electrical Test 104 104 Pass Burn-in, 240 hours 80 80 Complete Final Electrical test 80 80 Pass HTOL, 1000 hours 24 24 Complete Final Electrical test 24 24 Pass NOTES HMC6XXX (QTR2013-00340) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 6 6 Complete HTOL, 5039 hours 6 6 Complete Post HTOL Electrical Test 6 6 Pass NOTES HMC6XXX (QTR2013-00340) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 14 14 Complete HTOL, 2000 hours 14 14 Complete Post HTOL Electrical Test 14 14 Pass NOTES QTR: 2013- 00228 Wafer Process: GaAs HBT-A Rev: 05 GaAs HBT-A Failure Rate Estimate Based on the HTOL test results, a failure rate estimation was determined using the following parameters: With device ambient case temp, Tc = 65°C HMC365 (QTR2004-00001) Operating Junction Temp (Toj) =65°C (338°K) Stress Junction Temp (Tsj) = 125°C (398 °K) HMC510 (QTR2011-00004) Operating Junction Temp (Toj) =65°C (338°K) Stress Junction Temp (Tsj) = 125°C (398 °K) HMC511 (QTR2011-00013) Operating Junction Temp (Toj) =107°C (380°K) Stress Junction Temp (Tsj) = 135°C (408 °K) HMC416 (QTR2012-00198) Operating Junction Temp (Toj) =119°C (392°K) Stress Junction Temp (Tsj) = 175°C (448°K) HMC361 (QTR2012-00255) (240 hour test) Operating Junction Temp (Toj) =105°C (378°K) Stress Junction Temp (Tsj) = 165°C (438°K) HMC6XXX (QTR2013-00340) (5039 hour test) Operating Junction Temp (Toj) =111°C (384°K) Stress Junction Temp (Tsj) = 143°C (416°K) HMC6XXX (QTR2013-00340) (2000 hour test) Operating Junction Temp (Toj) =111°C (384°K) Stress Junction Temp (Tsj) = 143°C (416°K) QTR: 2013- 00228 Wafer Process: GaAs HBT-A Rev: 05 Device hours: HMC365 (QTR2004-00001) = (12 X 1240hrs) = 14,880 hours HMC510 (QTR2011-00004) = (12 X 1000hrs) = 12,000 hours HMC511 (QTR2011-00013) = (159 X 1000hrs) = 159,000 hours HMC416 (QTR2012-00198) = (24 X 1000hrs) = 24,000 hours HMC361 (QTR2012-00255, 240 hour test) = (80 X 240hrs) = 19,200 hours HMC361 (QTR2012-00255, 1000 hour test) = (12 X 1000hrs) = 12,000 hours HMC6XXX (QTR2013-00340, 5039 hour test) = (6 X 5039hrs) = 30,234 hours HMC6XXX (QTR2013-00340, 2000 hour test) = (14 X 2000hrs) = 28,000 hours For GaAs HBT-A MMIC, Activation Energy = 1.1 eV Acceleration Factor (AF): HMC365 (QTR2004-00001) Acceleration Factor = exp[1.1/8.6x10-5(1/338-1/398)] = 300.3 HMC510 (QTR2011-00004) Acceleration Factor = exp[1.1/8.6x10-5(1/338-1/398)] = 300.3 HMC511 (QTR2011-00013) Acceleration Factor = exp[1.1/8.6x10-5(1/380-1/408)] = 10.1 HMC416 (QTR2012-00198) Acceleration Factor = exp[1.1/8.6x10-5(1/392-1/448)] = 59.1 HMC361 (QTR2012-00255, 240 hour test) Acceleration Factor = exp[1.1/8.6x10-5(1/378-1/438)] = 103.1 HMC361 (QTR2012-00255, 1000 hour test) Acceleration Factor = exp[1.1/8.6x10-5(1/378-1/438)] = 103.1 HMC6XXX (QTR2013-00340, 5039 hour test) Acceleration Factor = exp[1.1/8.6x10-5(1/384-1/416)] = 45.7 HMC6XXX (QTR2013-00340, 2000 hour test) Acceleration Factor = exp[1.1/8.6x10-5(1/384-1/416)] = 45.7 Equivalent hours = Device hours x Acceleration Factor Equivalent hours = (14,880x300.3)+(12,000x300.3)+(159,000x10.1)+(24,000x59.1)+(19,200x103.1)+(12,000x103.1)+ (30,324x45.7)+(28,000x45.7) = 1.70x107 hours Since there were no failures and we used a time terminated test, F=0, and R = 2F+2 = 2 The failure rate was calculated using Chi Square Statistic: QTR: 2013- 00228 Wafer Process: GaAs HBT-A Rev: 05 at 60% and 90% Confidence Level (CL), with 0 units out of spec and a 65°C package backside temp; Failure Rate 60 = [(2)60,2]/(2X 1.70x107 )] = 1.8/ 3.39x107 = 5.39x10-8 failures/hour or 53.9 FIT or MTTF = 1.85x107 Hours 90 = [(2)90,2]/(2X 1.70x107 )] = 4.6/ 3.39x107 = 1.36x10-7 failures/hour or 135.8 FIT or MTTF = 7.36x106 Hours