Semiconductor Qualification Test Report: PHEMT-A (QTR: 2013-00267)

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Report Title:
Qualification Test Report
Report Type:
See Attached
Date:
See Attached
QTR: 2013- 00267
Wafer Process: PHEMT-A
HMC261
HMC263
HMC264
HMC265
HMC268
HMC281
HMC282
HMC283
HMC337
HMC338
HMC339
HMC341
HMC342
HMC404
HMC516
HMC517
HMC518
HMC519
HMC564
HMC565
HMC566
HMC570
HMC571
HMC572
HMC902
HMC903
HMC904
HMC908
HMC951B
HMC962
HMC963
HMC966
HMC967
HMC977
HMC1113
Rev: 05
QTR: 2013- 00267
Wafer Process: PHEMT-A
Rev: 05
Introduction
The testing performed for this report is designed to accelerate the predominant failure mode, electro-migration
(EM), for the devices under test. The devices are stressed at high temperature and DC biased to simulate a lifetime
of use at typical operating temperatures. Using the Arrhenius equation, the acceleration factor (AF) is calculated for
the stress testing based on the stress temperature and the typical use operating temperature.
This report is intended to summarize all of the High Temperature Operating Life Test (HTOL) data for the
PHEMT-A process. The FIT/MTTF data contained in this report includes all the stress testing performed on this
process to date and will be updated periodically as additional data becomes available. Data sheets for the tested
devices can be found at www.hittite.com.
Glossary of Terms & Definitions:
1. HAST: Highly Accelerated Stress Test (biased). Devices are subjected to 96 hours of 85% relative humidity at a
temperature of 130°C and pressure (18.6 PSIG), while DC biased. This test is performed in accordance with
JESD22-A110.
2. HTOL: High Temperature Operating Life. This test is used to determine the effects of bias conditions and
temperature on semiconductor devices over time. It simulates the devices’ operating condition in an accelerated
way, through high temperature and/or bias voltage, and is primarily for device qualification and reliability
monitoring. This test was performed in accordance with JEDEC JESD22-A108.
3. HTSL: High Temperature Storage Life. Devices are subjected to 1000 hours at 150oC per JESD22-A103.
4. MSL: Moisture sensitivity level pre-conditioning is performed per JESD22-A113.
5. Operating Junction Temp (Toj): Temperature of the die active circuitry during typical operation.
6. Stress Junction Temp (Tsj): Temperature of the die active circuitry during stress testing.
7. Temperature Cycle: Cond C (-65°C to 150°C), 500 cycles per JESD22-A104.
QTR: 2013- 00267
Wafer Process: PHEMT-A
Rev: 05
Qualification Sample Selection:
All qualification devices used were manufactured and tested on standard production processes and met pre-stress
acceptance test requirements.
Summary of Qualification Tests:
HMC264 (QTR2002-00001)
QTY
IN
36
QTY
OUT
36
HTOL, 1000 hours
36
36
Complete
Post HTOL Electrical test
36
35
Pass
1 piece
damaged
during test.
Bond Pull
10
10
Pass
HMC261 Die
Die Shear
10
10
Pass
HMC261 Die
SEM Inspection
10
10
Pass
HMC261 Die
Metal and Dielectric Thickness
10
10
Pass
HMC261 Die
QTY
IN
48
103
48
103
48
103
QTY
OUT
48
103
48
103
47
103
TEST
Initial electrical Test
PASS/FAIL
NOTES
Pass
HMC261 & 263 (QTR2002-00005)
TEST
Initial electrical Test
HTOL, 1240 hours
Post HTOL Electrical test
PASS/FAIL
NOTES
Pass
HMC261
HMC263
Complete
Pass
1 failure during
test.
QTR: 2013- 00267
Wafer Process: PHEMT-A
Rev: 05
Bond Pull
QTY
IN
10
QTY
OUT
10
Die Shear
10
SEM Inspection
Metal and Dielectric Thickness
TEST
PASS/FAIL
NOTES
Pass
HMC261 Die
10
Pass
HMC261 Die
10
10
Pass
HMC261 Die
10
10
Pass
HMC261 Die
Initial electrical Test
QTY
IN
316
QTY
OUT
316
MSL-1 Precondition
154
154
Complete
Post MSL1 Electrical Test
154
154
Pass
HAST (preconditioned)
77
77
Complete
Post HAST electrical Test
77
77
Pass
Temp. Cycle (preconditioned)
77
77
Complete
Post Temp Cycle electrical Test
77
77
Pass
HTSL
77
77
Complete
Post HTSL Electrical Test
77
77
Pass
HTOL
80
80
Complete
Post HTOL Electrical test
80
80
Pass
Physical Dimensions
15
15
Pass
Solderability
15
15
Pass
HMC966 (QTR2012-00014)
TEST
PASS/FAIL
Pass
NOTES
QTR: 2013- 00267
Wafer Process: PHEMT-A
Rev: 05
HMC6XXX (QTR2013-00340)
TEST
QTY IN QTY OUT
PASS / FAIL
Initial Electrical
6
6
Complete
HTOL, 5039 hours
6
6
Complete
Post HTOL Electrical Test
6
6
Pass
NOTES
HMC6XXX (QTR2013-00340)
TEST
QTY IN QTY OUT
PASS / FAIL
Initial Electrical
14
14
Complete
HTOL, 2000 hours
14
14
Complete
Post HTOL Electrical Test
14
14
Pass
NOTES
QTR: 2013- 00267
Wafer Process: PHEMT-A
Rev: 05
PHEMT-A Failure Rate Estimate
Based on the HTOL test results, a failure rate estimation was determined using the following
parameters:
With device case temp, Tc = 85°C
HMC264 (QTR2002-00001)
Operating Junction Temp (Toj) = 85°C(358°K)
Stress Junction Temp (Tsj) = 125°C(398°K)
HMC261 & 263 (QTR2002-00005)
Operating Junction Temp (Toj) = 85°C(358°K)
Stress Junction Temp (Tsj) = 125°C(398°K)
HMC966 (QTR2012-00014)
Operating Junction Temp (Toj) = 132°C(405°K)
Stress Junction Temp (Tsj) = 175°C(448°K)
HMC6XXX (QTR2013-00340)
Operating Junction Temp (Toj) = 108°C(381°K)
Stress Junction Temp (Tsj) = 112°C(385°K)
Device hours:
HMC264 (QTR2002-00001) = (35 X 1000hrs) = 35,000 hours
HMC261 & 263 (QTR2002-00005) = (151 X 1240hrs) = 187,240 hours
HMC966 (QTR2012-00014) = (80 X 1000hrs) = 80,000 hours
HMC6XXX (QTR2013-00340) = (6 X 5039hrs) = 30,234 hours
HMC6XXX (QTR2013-00340) = (14 X 2000hrs) = 28,000 hours
For PHEMT-A MMIC, Activation Energy = 1.6 eV
QTR: 2013- 00267
Wafer Process: PHEMT-A
Rev: 05
Acceleration Factor (AF):
HMC264 (QTR2002-00001) Acceleration Factor = exp[1.6/8.6x10-5(1/390-1/448)] = 185.5
HMC261 & 263 (QTR2002-00005) Acceleration Factor = exp[1.6/8.6x10-5(1/390-1/448)] = 185.5
HMC966 (QTR2012-00014) Acceleration Factor = exp[1.6/8.6x10-5(1/390-1/448)] = 82.2
HMC6XXX (QTR2013-00340) Acceleration Factor = exp[1.6/8.6x10-5(1/381-1/385)] = 1.7
Equivalent hours = Device hours x Acceleration Factor
Equivalent hours = (35,000x185.5)+(187,240x185.5)+(80,000x82.2)+(30,234x1.7)+
(28,000x1.7) = 4.79x107 hours
Since there was one failure and we used a time terminated test, F=1, and R = 2F+2 = 4
The failure rate was calculated using Chi Square Statistic:
at 60% and 90% Confidence Level (CL), with 1 unit out of spec
and a 85°C case temp;
Failure Rate
60 = [(2)60,2]/(2X 4.79x107 )] = 4.1/ 9.58x107 = 4.23x10-8 failures/hour or 42.3 FIT or MTTF = 2.37x107 Hours
90 = [(2)90,2]/(2X 4.79x107 )] = 7.8/ 9.58x107 = 8.12x10-8 failures/hour or 81.2 FIT or MTTF = 1.23x107 Hours