Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC5846LS6 v01.0414 AMPLIFIERS - LINEAR & POWER - SMT GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Typical Applications Features The HMC5846LS6 is ideal for: Saturated Output Power: 35.5 dBm @ 30% PAE • Point-to-Point Radios High Output IP3: 42.5 dBm • Point-to-Multi-Point Radios High Gain: 31 dB • VSAT & SATCOM DC Supply: +7V @ 1200 mA • Military & Space No External Matching Required Functional Diagram General Description The HMC5846LS6 is a 4 stage GaAs pHEMT MMIC 2 Watt Power Amplifier with an integrated temperature compensated power detector which operates between 12 and 16 GHz. The HMC5846LS6 provides 31 dB of gain, 35.5 dBm of saturated output power, and 30% PAE from a +7V supply. The HMC5846LS6 exhibits excellent linearity and is optimized for high capacity digital microwave radio. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications. Electrical Specifications, TA = +25 °C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 = +7V, Idd = 1200 mA [1] Parameter Min. Frequency Range Gain 26 Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Typ. 12 - 16 32.5 Max. Units GHz 31 dB 0.06 dB/ °C 10 dB 17 dB 34.5 dBm Saturated Output Power (Psat) 35.5 dBm Output Third Order Intercept (IP3)[2] 42.5 dBm Total Supply Current (Idd) 1200 mA [1] Adjust Vgg between -2 to 0V to achieve Idd = 1200 mA typical. [2] Measurement taken at +7V @ 1200 mA, Pout / Tone = +22 dBm 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC5846LS6 v01.0414 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature 40 30 GAIN (dB) RESPONSE (dB) 34 20 10 0 30 26 -10 22 -20 -30 18 10 11 12 13 14 15 FREQUENCY (GHz) S21 16 17 18 11 13 S11 S22 +25C 15 16 17 +85C -40C Output Return Loss vs. Temperature 0 0 -5 RETURN LOSS (dB) -4 -8 -12 -16 -10 -15 -20 -25 -20 -30 11 12 13 14 15 16 17 11 12 13 FREQUENCY (GHz) +25C 14 15 16 17 FREQUENCY (GHz) +85C -40C +25C P1dB vs. Temperature +85C -40C P1dB vs. Supply Voltage 38 38 36 36 34 34 P1dB (dBm) P1dB (dBm) 14 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) 12 AMPLIFIERS - LINEAR & POWER - SMT 38 32 32 30 30 28 28 26 26 12 13 14 15 16 12 13 +25C +85C 14 15 16 FREQUENCY (GHz) FREQUENCY (GHz) -40C 5V 6V 7V For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC5846LS6 v01.0414 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz 38 36 36 Psat (dBm) Psat (dBm) Psat vs. Supply Voltage 38 34 32 30 34 32 30 28 28 12 13 14 15 16 12 13 FREQUENCY (GHz) +25C +85C 5V -40C 15 16 6V 7V Psat vs. Supply Current (Idd) 38 36 36 34 34 Psat(dBm) 38 32 32 30 30 28 28 26 26 12 13 14 15 16 12 13 FREQUENCY (GHz) 14 15 16 FREQUENCY (GHz) 900mA 1000mA 1100mA 1200mA 900mA 1000mA Output IP3 vs. Temperature, Pout/Tone = +22 dBm 48 48 46 46 44 44 42 42 40 38 40 38 36 36 34 34 32 32 30 1100mA 1200mA Output IP3 vs. Supply Current, Pout/Tone = +22 dBm IP3 (dBm) IP3 (dBm) 14 FREQUENCY (GHz) P1dB vs. Supply Current (Idd) P1dB (dBm) AMPLIFIERS - LINEAR & POWER - SMT Psat vs. Temperature 30 12 13 14 15 16 12 13 FREQUENCY (GHz) +25C +85C 14 15 16 FREQUENCY (GHz) -40C 900mA 1000mA 1100mA 1200mA [1] Footnote if needed 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC5846LS6 v01.0414 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Output IM3 @ Vdd = +5V 48 80 46 70 44 60 IM3 (dBc) IP3 (dBm) 42 40 38 50 40 30 36 34 20 32 10 30 0 12 13 14 15 16 10 12 14 FREQUENCY (GHz) 5V 6V 7V 20 22 24 14 GHz 15 GHz 16 GHz Output IM3 @ Vdd = +7V 80 80 70 70 60 60 50 50 IM3 (dBc) IM3 (dBc) 18 12 GHz 13 GHz Output IM3 @ Vdd = +6V 40 40 30 30 20 20 10 10 0 0 10 12 14 16 18 20 22 10 24 12 14 12 GHz 13 GHz 14 GHz 15 GHz 18 12 GHz 13 GHz 16 GHz Power Compression @ 13 GHz 20 22 24 14 GHz 15 GHz 16 GHz Power Compression @ 14 GHz 40 Pout (dBm), GAIN (dB), PAE (%) 40 35 30 25 20 15 10 5 0 -10 16 Pout/TONE (dBm) Pout/TONE (dBm) Pout (dBm), GAIN (dB), PAE (%) 16 Pout/TONE (dBm) AMPLIFIERS - LINEAR & POWER - SMT Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm -8 -6 -4 -2 0 2 4 6 8 35 30 25 20 15 10 5 0 -10 -8 -6 -4 INPUT POWER (dBm) Pout Gain -2 0 2 4 6 8 10 INPUT POWER (dBm) PAE Pout Gain PAE For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC5846LS6 v01.0414 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Power Compression @ 15 GHz Detector Voltage Over Temperature 10 30 Vref-Vdet (V) Pout (dBm), GAIN (dB), PAE (%) 35 25 20 15 0.1 5 0.01 -8 -6 -4 -2 0 2 4 6 8 10 -5 3 11 Pout Gain 27 12.5GHz +25C 12.5GHz +85C 12.5GHz -55C PAE 35 15.5GHz +25C 15.5GHz +85C 15.5GHz -55C Gain & Power vs. Supply Current @ 14 GHz Reverse Isolation vs. Temperature 40 Gain (dB), P1dB (dBm), Psat (dBm) 0 -10 -20 -30 -40 -50 -60 -70 -80 35 30 25 20 -90 11 12 13 14 15 16 900 17 1000 +25C 1100 1200 Idd (mA) FREQUENCY (GHz) +85C Gain -40C P1dB Psat Power Dissipation 45 10 9 POWER DISSIPATION (W) Gain (dB), P1dB (dBm), Psat (dBm) 19 OUTPUT POWER (dBm) INPUT POWER (dBm) Gain & Power vs. Supply Voltage @ 14 GHz 40 35 30 25 8 7 6 5 4 3 2 1 20 5 5.5 6 6.5 7 Vdd (V) Gain 5 1 10 0 -10 ISOLATION (dB) AMPLIFIERS - LINEAR & POWER - SMT 40 P1dB 0 -10 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) Psat Max Pdis @ 85C 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC5846LS6 v01.0414 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz Drain Bias Voltage (Vdd) +8V RF Input Power (RFIN) +24 dBm Channel Temperature Reliability Information Junction Temperature to Maintain 1 Million Hour MTTF 150 °C 150 °C Nominal Junction Temperature (T= 85 °C and Pin = 10 dBm) 90 °C Continuous Pdiss (T= 85 °C) (derate 133 mW/°C above 85 °C) 8.6 W Operating Temperature -55 to +85 °C Thermal Resistance (channel to ground paddle) 7.55 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1A Pass 250V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - LINEAR & POWER - SMT Absolute Maximum Ratings Package Information Part Number Package Body Material Lead Finish MSL Rating [2] Package Marking [1] HMC5846LS6 ALUMINA WHITE Gold over Nickel N/A H5846 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC5846LS6 v01.0414 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz AMPLIFIERS - LINEAR & POWER - SMT Pin Descriptions 7 Pad Number Function Description 6 RFIN This Pin is DC coupled and matched to 50 Ohms over the operating frequency. 1-4 9, 10 Vdd4, Vdd3, Vdd2, Vdd1, Vdd5, Vdd6 Drain bias voltage for the amplifier. External bypass capacitors of 100 pF are required for each pin followed by 0.01 μF capacitors and a 4.7 μF capacitors. 8 Vgg1 Gate controlled amplifier. External bypass capacitors of 100 pF are required followed by 0.01 μF capacitors and a 4.7 μF capacitors. 5, 7, 13, 15, 16 GND These Pins and Package bottom must be connected to RF/DC ground. 11 Vref DC voltage of diode biased through external resistor, used for temperature compensation of Vdet. 12 Vdet DC voltage representing RF output rectified by diode which is biased through an external resistor. 14 RFOUT This Pin is DC coupled and matched to 50 Ohms. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC5846LS6 v01.0414 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz AMPLIFIERS - LINEAR & POWER - SMT Evaluation PCB List of Materials for Evaluation PCB EVAL01-HMC5846L56 Item Description J1, J2 PCB Mount K Connectors, SRI J5, J6 DC Pins C1 - C6, C20, C21, C23 100 pF Capacitors, 0402 Pkg. C7 - C12, C19, C25, C26 0.01 μF Capacitors, 0603 Pkg. C13 - C18, C29 - C31 4.7 μF Capacitors, Case A Pkg. R1 - R2 40.2 kOhm Resistor, 0402 Pkg. U1 HMC5846LS6 Amplifier PCB [2] 128996 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [2] Circuit Board Material: Rogers 4350 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8