Semiconductor Qualification Test Report: PHEMT-J (QTR: 2013-00285)

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Report Title:
Qualification Test Report
Report Type:
See Attached
Date:
See Attached
QTR: 2013-00285
Wafer Process: PHEMT-J
HMC190B
HMC194A
HMC197B
HMC199A
HMC221B
HMC231A
HMC232A
HMC233A
HMC234A
HMC240B
HMC241A
HMC244A
HMC245A
HMC252A
HMC253A
HMC270A
HMC271B
HMC273A
HMC274A
HMC284A
HMC305B
HMC306A
HMC321A
HMC322A
HMC344A
HMC345A
HMC347A
HMC348A
HMC349A
HMC424A
HMC425A
HMC427A
HMC435A
HMC468A
HMC470A
HMC472A
HMC539A
HMC540A
HMC542B
HMC544A
HMC545A
HMC547A
HMC550A
HMC574A
HMC595A
HMC603A
HMC624A
HMC625A
HMC626A
HMC627A
HMC641A
HMC681A
HMC742A
HMC743A
Rev: 06
HMC784A
HMC792A
HMC849A
HMC939A
HMC941A
HMC1018A
HMC1019A
HMC1084
HMC-C011A
HMC-C018A
HMC-C019A
HMC-C025A
QTR: 2013-00285
Wafer Process: PHEMT-J
Rev: 06
Introduction
The testing performed for this report is designed to accelerate the predominant failure mode, electro-migration
(EM), for the devices under test. The devices are stressed at high temperature and DC biased to simulate a lifetime
of use at typical operating temperatures. Using the Arrhenius equation, the acceleration factor (AF) is calculated for
the stress testing based on the stress temperature and the typical use operating temperature.
This report is intended to summarize all of the High Temperature Operating Life Test (HTOL) data for the
PHEMT-J process. The FIT/MTTF data contained in this report includes all the stress testing performed on this
process to date and will be updated periodically as additional data becomes available. Data sheets for the tested
devices can be found at www.hittite.com.
Glossary of Terms & Definitions:
1. HTOL: High Temperature Operating Life. This test is used to determine the effects of bias conditions and
temperature on semiconductor devices over time. It simulates the devices’ operating condition in an accelerated
way, through high temperature and/or bias voltage, and is primarily for device qualification and reliability
monitoring. This test was performed in accordance with JEDEC JESD22-A108.
2. HTSL: High Temperature Storage Life. Devices are subjected to 1000 hours at 150oC per JESD22-A103.
3. MSL: Moisture sensitivity level pre-conditioning is performed per JESD22-A113.
4. Operating Junction Temp (Toj): Temperature of the die active circuitry during typical operation.
5. Stress Junction Temp (Tsj): Temperature of the die active circuitry during stress testing.
6. UHAST: Unbiased Highly Accelerated Stress Test. Devices are subjected to 96 hours of 85% relative humidity at
a temperature of 130°C and pressure (18.6 PSIG). This test is performed in accordance with JESD22-A118.
7. Temperature Cycle: Devices are subjected to 500 cycles of -65°C to 150°C. This test is performed in accordance
with JESD22-A104.
8. THB: Temperature Humidity Bias. Devices are subjected to 1000 hours of 85% relative humidity at a
temperature of 85°C and electrical bias. This test is performed in accordance with JESD22-A101.
QTR: 2013-00285
Wafer Process: PHEMT-J
Rev: 06
Qualification Sample Selection:
All qualification devices used were manufactured and tested on standard production processes and met pre-stress
acceptance test requirements.
Summary of Qualification Tests:
HMC6488A / HMC349A (QTR2012-00017)
QTY
IN
80
QTY
OUT
80
Complete
HTOL, 1000 hours
80
80
Complete
Post HTOL Electrical Test
80
80
Pass
HTSL, 1000 hours
46
46
Complete
Post HTSL Electrical Test
46
46
Pass
TEST
Initial Electrical
PASS/FAIL
NOTES
HMC6484 / HMC273A (QTR2012-00042)
QTY
IN
80
QTY
OUT
80
Complete
HTOL, 1000 hours
80
80
Complete
Post HTOL Electrical Test
80
80
Pass
HTSL, 1000 hours
80
80
Complete
Post HTSL Electrical Test
80
80
Pass
TEST
Initial Electrical
PASS/FAIL
NOTES
QTR: 2013-00285
Wafer Process: PHEMT-J
Rev: 06
HMC284A (QTR2012-00461)
QTY
IN
478
QTY
OUT
478
Complete
HTOL, 1000 hours
160
160
Complete
Post HTOL Electrical Test
160
160
Pass
HTSL, 1000 hours
80
80
Complete
Post HTSL Electrical Test
80
80
Pass
MSL1 Preconditioning
238
238
Complete
MSL1 Preconditioning Final Test
238
238
Pass
UHAST (Preconditioned)
80
80
Complete
UHAST Final Test
80
80
Pass
Temperature Cycle
(Preconditioned)
80
80
Complete
Temperature Cycle Final Test
80
80
Pass
THB (Preconditioned)
78
78
Complete
THB Final Test
78
78
Pass
TEST
Initial Electrical
PASS/FAIL
NOTES
QTR: 2013-00285
Wafer Process: PHEMT-J
Rev: 06
HMC472A (QTR2013-00524)
Initial Electrical
QTY
IN
1134
QTY
OUT
1134
Complete
HTOL, 168 hours
1134
1134
Complete
Post HTOL Electrical Test
1134
1134
Pass
QTY
IN
200
QTY
OUT
200
Complete
HTOL, 1000 hours, Tj=150°C
80
80
Complete
Post HTOL Electrical Test
80
80
Pass
HTSL, 1000 hours
30
30
Complete
Post HTSL Electrical Test
30
30
Pass
MSL1 Preconditioning
90
90
Complete
MSL1 Preconditioning Final Test
90
90
Pass
UHAST (Preconditioned)
30
30
Complete
UHAST Final Test
30
30
Pass
Temperature Cycle
(Preconditioned)
30
30
Complete
Temperature Cycle Final Test
30
30
Pass
THB (Preconditioned)
30
30
Complete
THB Final Test
30
30
Pass
TEST
PASS/FAIL
NOTES
HMC349A (QTR2014-00445)
TEST
Initial Electrical
PASS/FAIL
NOTES
QTR: 2013-00285
Wafer Process: PHEMT-J
Rev: 06
HMC1190A (Q11869)
TEST
QTY
IN
QTY
OUT
Initial Electrical
PASS/FAIL
NOTES
Complete
HTOL, 1000 hours, Tj=125°C
49
49
Complete
Post HTOL Electrical Test
49
49
Pass
HTSL, 1000 hours
135
135
Complete
Post HTSL Electrical Test
135
135
Pass
MSL1 Preconditioning
135
135
Complete
MSL1 Preconditioning Final Test
135
135
Pass
Temperature Cycle
(Preconditioned)
90
90
Complete
Temperature Cycle Final Test
90
90
Pass
THB (Preconditioned)
45
45
Complete
THB Final Test
45
45
Pass
ESD Results
42
42
Pass
3 lots of 45 units
each.
2 lots of 45 units
each.
HBM pass 500V
CDM pass 1000V
QTR: 2013-00285
Wafer Process: PHEMT-J
Rev: 06
PHEMT-J Failure Rate Estimate
Based on the HTOL test results, a failure rate estimation was determined using the following
parameters:
With Device Die Junction Temp, Tj = 85°C
HMC6488A / HMC349A (QTR2012-00017)
Operating Junction Temp (Toj) = 85°C(358°K)
Stress Junction Temp (Tsj) = 125°C(398°K)
HMC6484 / 273A (QTR2012-00042)
Operating Junction Temp (Toj) = 85°C(358°K)
Stress Junction Temp (Tsj) = 125°C(398°K)
HMC284A (QTR2012-00461)
Operating Junction Temp (Toj) = 85°C(358°K)
Stress Junction Temp (Tsj) = 150°C(423°K)
HMC472A (QTR2013-00524)
Operating Junction Temp (Toj) = 85°C(358°K)
Stress Junction Temp (Tsj) = 150°C(423°K)
HMC349A (QTR2014-00445)
Operating Junction Temp (Toj) = 85°C(358°K)
Stress Junction Temp (Tsj) = 150°C(423°K)
HMC1190A (Q11869)
Operating Junction Temp (Toj) = 85°C(358°K)
Stress Junction Temp (Tsj) = 125°C(398°K)
QTR: 2013-00285
Wafer Process: PHEMT-J
Rev: 06
Device hours:
HMC6488A / HMC349A (QTR2012-00017) = (80 X 1000hrs) = 80,000 hours
HMC6484 / HMC273A (QTR2012-00042) = (80 X 1000hrs) = 80,000 hours
HMC284A (QTR2012-00461) = (160 X 1000hrs) = 160,000 hours
HMC472A (QTR2013-00524) = (1134 X 168hrs) = 190,512 hours
HMC349A (QTR2014-00445) = (80 X 1000hrs) = 80,000 hours
HMC1190A (Q11869) = (49 X 1000hrs) = 49,000 hours
For PHEMT-J MMIC, Activation Energy = 1.46 eV
Acceleration Factor (AF):
HMC6488A / HMC349A (QTR2012-00017) Acceleration Factor = exp[1.46/8.6 e-5(1/358-1/398)] = 117.4
HMC6484 / 273A (QTR2012-00042) Acceleration Factor = exp[1.46/8.6 e-5(1/358-1/398)] = 117.4
HMC284A (QTR2012-00461) Acceleration Factor = exp[1.46/8.6 e-5(1/358-1/423)] = 1461.1
HMC472A (QTR2013-00524) Acceleration Factor = exp[1.46/8.6 e-5(1/358-1/423)] = 1461.1
HMC349A (QTR2014-00445) Acceleration Factor = exp[1.46/8.6 e-5(1/358-1/423)] = 1461.1
HMC1190A (Q11869) Acceleration Factor = exp[1.46/8.6 e-5(1/358-1/398)] = 117.4
Equivalent hours = Device hours x Acceleration Factor
Equivalent hours = (80,000x117.4)+(80,000x117.4)+(160,000x1461.1)+(190,512x1461.1)+(80,000x1461.1)
+(49,000x117.4) = 6.54x108 hours
QTR: 2013-00285
Wafer Process: PHEMT-J
Rev: 06
Since there was no failures and we used a time terminated test, F=0, and R = 2F+2 = 2
The failure rate was calculated using Chi Square Statistic:
at 60% and 90% Confidence Level (CL), with 0 units out of spec
and a 85°C device junction temp;
Failure Rate
60 = [(2)60,2]/(2X 6.54x108 )] = 1.8/ 1.39x109 = 1.40x10-9 failures/hour or 1.4
FIT or MTTF = 7.1x108 Hours
90 = [(2)90,2]/(2X 6.54x108 )] = 4.6/ 1.39x109 = 3.53x10-9 failures/hour or 3.5
FIT or MTTF = 2.8x108 Hours