Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com Report Title: Qualification Test Report Report Type: See Attached Date: See Attached QTR: 2013- 00241 Wafer Process: BiCMOS-C HMC675 HMC675 HMC676 HMC676 HMC678 HMC679 HMC706 HMC720 HMC720 HMC721 HMC721 HMC722 HMC722 HMC723 HMC723 HMC724 HMC725 HMC726 HMC727 HMC728 HMC729 HMC744 HMC745 HMC746 HMC747 HMC748 HMC749 HMC791 HMC813 HMC813 HMC841 HMC842 HMC843 HMC844 HMC847 HMC848 HMC850 HMC851 HMC853 HMC854 HMC855 HMC856 HMC865 HMC866 HMC874 HMC875 HMC876 HMC905 HMC910 HMC913 Rev: 05 HMC948 HMC954 HMC955 HMC974 HMC1020 HMC1027 HMC1094 QTR: 2013- 00241 Wafer Process: BiCMOS-C Rev: 05 Introduction The testing performed for this report is designed to accelerate the predominant failure mode, electro-migration (EM), for the devices under test. The devices are stressed at high temperature and DC biased to simulate a lifetime of use at typical operating temperatures. Using the Arrhenius equation, the acceleration factor (AF) is calculated for the stress testing based on the stress temperature and the typical use operating temperature. This report is intended to summarize all of the High Temperature Operating Life Test (HTOL) data for the BiCMOS-C process. The FIT/MTTF data contained in this report includes all the stress testing performed on this process to date and will be updated periodically as additional data becomes available. Data sheets for the tested devices can be found at www.hittite.com. Glossary of Terms & Definitions: 1. HTOL: High Temperature Operating Life. This test is used to determine the effects of bias conditions and temperature on semiconductor devices over time. It simulates the devices’ operating condition in an accelerated way, through high temperature and/or bias voltage, and is primarily for device qualification and reliability monitoring. This test was performed in accordance with JEDEC JESD22-A108. 2. Operating Junction Temp (Toj): Temperature of the die active circuitry during typical operation. 3. Stress Junction Temp (Tsj): Temperature of the die active circuitry during stress testing. QTR: 2013- 00241 Wafer Process: BiCMOS-C Rev: 05 Qualification Sample Selection: All qualification devices used were manufactured and tested on standard production processes and met pre-stress acceptance test requirements. Summary of Qualification Tests: HMC613 (QTR2009-00001) TEST QTY IN QTY OUT PASS/FAIL Initial Electrical 57 57 Complete HTOL, 1000 hours 57 57 Complete Post HTOL Electrical Test 57 57 Pass Bond Pull 10 10 Pass SEM Inspection 5 5 Pass Metal and Dielectric Thickness 5 5 Pass QTY IN QTY OUT PASS / FAIL Initial Electrical 80 80 Complete HTOL, 1000 hours 80 80 Complete Post HTOL Electrical Test 80 80 Pass NOTES 30 wires from 10 devices. HMC913 (QTR2009-00001) TEST NOTES QTR: 2013- 00241 Wafer Process: BiCMOS-C Rev: 05 HMC913 (QTR2012-00053) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 72 72 Complete HTOL, 1000 hours 72 72 Complete Post HTOL Electrical Test 72 72 Pass NOTES HMC913 (QTR2012-00358) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 78 78 Complete HTOL, 1000 hours 78 78 Complete Post HTOL Electrical Test 78 78 Pass NOTES HMC910 (QTR2012-00304) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 78 78 Complete HTOL, 1000 hours 78 78 Complete Post HTOL Electrical Test 78 78 Pass NOTES QTR: 2013- 00241 Wafer Process: BiCMOS-C Rev: 05 HMC6XXX (QTR2013-00340) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 6 6 Complete HTOL, 5039 hours 6 6 Complete Post HTOL Electrical Test 6 6 Pass NOTES HMC6XXX (QTR2013-00340) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 14 14 Complete HTOL, 2000 hours 14 14 Complete Post HTOL Electrical Test 14 14 Pass NOTES HMC1027 (QTR2013-00415) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 79 79 Complete HTOL, 1000 hours 79 79 Complete Post HTOL Electrical Test 79 79 Pass NOTES QTR: 2013- 00241 Wafer Process: BiCMOS-C Rev: 05 HMC1020 (QTR2014-00405) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 81 81 Complete HTOL, 1000 hours, Tj=150°C 81 81 Complete Post HTOL Electrical Test 81 81 Pass NOTES BiCMOS-C Failure Rate Estimate Based on the HTOL test results, a failure rate estimation was determined using the following parameters: With device case temp, Tc = 60°C HMC613 (QTR2009-00001) Operating Junction Temp (Toj) =83°C(356°K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC913 (QTR2009-00001) Operating Junction Temp (Toj) =83°C(356°K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC913 (QTR2012-00053) Operating Junction Temp (Toj) =83°C(356°K) Stress Junction Temp (Tsj) = 175°C(448°K) HMC913 (QTR2012-00358) Operating Junction Temp (Toj) =83°C(356°K) Stress Junction Temp (Tsj) = 175°C(448°K) HMC910 (QTR2012-00304) Operating Junction Temp (Toj) =88.5°C(361.5°K) Stress Junction Temp (Tsj) = 150°C(423°K) QTR: 2013- 00241 Wafer Process: BiCMOS-C HMC6XXX (QTR2013-00340) Operating Junction Temp (Toj) =87°C(360°K) Stress Junction Temp (Tsj) = 122°C(395°K) HMC1027 (QTR2013-00415) Operating Junction Temp (Toj) =84°C(357°K) Stress Junction Temp (Tsj) = 125°C(398°K) HMC1020 (QTR2014-00405) Operating Junction Temp (Toj) =67°C(340°K) Stress Junction Temp (Tsj) = 150°C(423°K) Device hours: HMC613 (QTR2009-00001) = (57 X 1000hrs) = 57,000 hours HMC913 (QTR2009-00001) = (80 X 1000hrs) = 80,000 hours HMC913 (QTR2012-00053) = (72 X 1033hrs) = 72,000 hours HMC913 (QTR2012-00358) = (78 X 1000hrs) = 78,000 hours HMC910 (QTR2012-00304) = (78 X 1000hrs) = 78,000 hours HMC6XXX (QTR2013-00340) = (6 X 5039hrs) = 30,234 hours HMC6XXX (QTR2013-00340) = (14 X 2000hrs) = 28,000 hours HMC1027 (QTR2013-00415) = (79 X 1000hrs) = 79,000 hours HMC1020 (QTR2014-00405) = (81 X 1000hrs) = 81,000 hours Rev: 05 QTR: 2013- 00241 Wafer Process: BiCMOS-C Rev: 05 For BiCMOS-C MMIC, Activation Energy = 0.7 eV Acceleration Factor (AF): HMC613 (QTR2009-00001) Acceleration Factor = exp[0.7/8.6x10-5(1/356-1/423)] = 37.4 HMC913 (QTR2009-00001) Acceleration Factor = exp[0.7/8.6x10-5(1/356-1/423)] = 37.4 HMC913 (QTR2012-00053) Acceleration Factor = exp[0.7/8.6x10-5(1/356-1/448)] = 109.4 HMC913 (QTR2012-00358) Acceleration Factor = exp[0.7/8.6x10-5(1/356-1/448)] = 109.4 HMC910 (QTR2012-00304) Acceleration Factor = exp[0.7/8.6x10-5(1/361.5-1/423)] = 26.4 HMC6XXX (QTR2013-00340) Acceleration Factor = exp[0.7/8.6x10-5(1/360-1/395)] = 7.4 HMC1027 (QTR2013-00415) Acceleration Factor = exp[0.7/8.6x10-5(1/357-1/398)] = 10.5 HMC1020 (QTR2014-00405) Acceleration Factor = exp[0.7/8.6x10-5(1/340-1/423)] = 109.7 Equivalent hours = Device hours x Acceleration Factor Equivalent hours = (57,000x37.4)+(80,000x37.4)+(72,000x109.4)+(78,000x109.4)+(78,000x26.4)+ (30,234x7.4)+(28,000x7.4)+(79,000x10.5)+(81,000x109.7) = 4.17x107 hours Since there were no failures and we used a time terminated test, F=0, and R = 2F+2 = 2 The failure rate was calculated using Chi Square Statistic: at 60% and 90% Confidence Level (CL), with 0 units out of spec and a 60°C package backside temp; Failure Rate 60 = [(2)60,2]/(2X 4.17x107 )] = 1.8/ 8.33x107 = 2.20x10-8 failures/hour or 22.0 FIT or MTTF = 4.55x107 hours 90 = [(2)90,2]/(2X 4.17x107 )] = 4.6/ 8.33x107 = 5.53x10-8 failures/hour or 55.3 FIT or MTTF = 1.81x107 hours