Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com Report Title: Qualification Test Report Report Type: See Attached Date: See Attached QTR: 2013- 00235 Wafer Process: BiCMOS-A HMC600 HMC601 HMC602 HMC611 HMC612 HMC628 HMC640 HMC666 HMC677 HMC680 HMC682 HMC683 HMC684 HMC685 HMC686 HMC687 HMC688 HMC689 HMC700 HMC701 HMC702 HMC703 HMC704 HMC713 HMC750 HMC759 HMC785 HMC786 HMC794 HMC795 HMC799 HMC820 HMC821 HMC822 HMC824 HMC826 HMC828 HMC829 HMC830 HMC831 HMC832 HMC832A HMC833 HMC836 HMC837 HMC838 HMC839 HMC840 HMC860 HMC900 Rev: 08 HMC909 HMC914 HMC940 HMC960 HMC976 HMC987 HMC988 HMC993 HMC1010 HMC1020 HMC1021 HMC1023 HMC1030 HMC1031 HMC1032 HMC1033 HMC1034 HMC1035 HMC1044 HMC1060 HMC1097 HMC1190 HMC1197 HMC7846 QTR: 2013- 00235 Wafer Process: BiCMOS-A Rev: 08 Introduction The testing performed for this report is designed to accelerate the predominant failure mode, electro-migration (EM), for the devices under test. The devices are stressed at high temperature and DC biased to simulate a lifetime of use at typical operating temperatures. Using the Arrhenius equation, the acceleration factor (AF) is calculated for the stress testing based on the stress temperature and the typical use operating temperature. This report is intended to summarize all of the High Temperature Operating Life Test (HTOL) data for the BiCMOS-A process. The FIT/MTTF data contained in this report includes all the stress testing performed on this process to date and will be updated periodically as additional data becomes available. Data sheets for the tested devices can be found at www.hittite.com. Glossary of Terms & Definitions: 1. CDM: Charged Device Model. A specified ESD testing circuit characterizing an event that occurs when a device acquires charge through some triboelectric (frictional) or electrostatic induction processes and then abruptly touches a grounded object or surface. This test was performed in accordance with JEDEC 22-C101. 2. ESD: Electro-Static Discharge. A sudden transfer of electrostatic charge between bodies or surfaces at different electrostatic potentials. 3. HBM: Human Body Model. A specified ESD testing circuit characterizing an event that occurs when a device is subjected to an electro-static charge stored in the human body and discharged through handling of the electronic device. This test was performed in accordance with JEDEC 22-A114. 4. HAST: Highly Accelerated Stress Test (biased). Devices are subjected to 96 hours of 85% relative humidity at a temperature of 130°C and pressure (15 PSIG), while DC biased. This test is performed in accordance with JESD22-A110. 5. HTOL: High Temperature Operating Life. This test is used to determine the effects of bias conditions and temperature on semiconductor devices over time. It simulates the devices’ operating condition in an accelerated way, through high temperature and/or bias voltage, and is primarily for device qualification and reliability monitoring. This test was performed in accordance with JEDEC JESD22-A108. 6. HTSL: High Temperature Storage Life. Devices are subjected to 1000 hours at 150oC per JESD22-A103. 7. MSL: Moisture sensitivity level pre-conditioning is performed per JESD22-A113. 8. Operating Junction Temp (Toj): Temperature of the die active circuitry during typical operation. 9. Stress Junction Temp (Tsj): Temperature of the die active circuitry during stress testing. QTR: 2013- 00235 Wafer Process: BiCMOS-A Rev: 08 10. Temperature Cycle: Cond C (-65°C to 150°C), 500 cycles per JESD22-A104. 11. UHAST: Unbiased Highly Accelerated Stress Test. Devices are subjected to 96 hours of 85% relative humidity at a temperature of 130°C and pressure (15 PSIG). This test is performed in accordance with JESD22-A118. Qualification Sample Selection: All qualification devices used were manufactured and tested on standard production processes and met pre-stress acceptance test requirements. Summary of Qualification Tests: HMC610 (QTR2008-00003) TEST QTY IN QTY OUT PASS/FAIL Initial Electrical 78 78 Complete HTOL, 1000 hours Post HTOL Electrical Test Bond Pull 78 78 Complete 78 78 Pass 10 10 Pass Die Shear Metal and Dielectric Thickness SEM Inspection 10 10 Pass 5 5 Pass 5 5 Pass NOTES QTR: 2013- 00235 Wafer Process: BiCMOS-A Rev: 08 HMC701 (QTR2011-00002) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 933 933 Complete HTOL, 1000 hours 240 240 Complete Post HTOL Electrical Test 240 240 Pass MSL1 Preconditioning 693 693 Complete MSL1 Preconditioning Final Test 693 693 Pass UHAST (Preconditioned) 231 231 Complete UHAST Final Test 231 231 Pass HAST (Preconditioned) 231 231 Complete HAST Final Test 231 231 Pass Temperature Cycle (Preconditioned) 231 231 Complete Temperature Cycle Final Test 231 231 Pass ESD 45 45 Complete Latch Up 6 6 Pass QTY IN QTY OUT PASS / FAIL Initial Electrical 240 240 Complete HTOL, 1033 hours 240 240 Complete Post HTOL Electrical Test 240 240 Pass NOTES HBM Class 1B CDM Class IV MM 110V HMC701 (QTR2012-00249) TEST NOTES QTR: 2013- 00235 Wafer Process: BiCMOS-A Rev: 08 HMC976 (QTR2012-00028) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 241 241 Complete HTOL, 1000 hours 80 80 Complete Post HTOL Electrical Test 80 80 Pass MSL1 Preconditioning 161 161 Complete MSL1 Preconditioning Final Test 161 161 Pass UHAST (Preconditioned) 81 81 Complete UHAST Final Test 81 81 Pass Temperature Cycle (Preconditioned) 80 80 Complete Temperature Cycle Final Test 80 80 Pass NOTES HMC701 (QTR2012-00343) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 239 239 Complete HTOL, 1033 hours 239 239 Complete Post HTOL Electrical Test 239 239 Pass NOTES QTR: 2013- 00235 Wafer Process: BiCMOS-A Rev: 08 HMC830 (QTR2012-00024) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 160 160 Complete HTOL, 1029 hours 80 80 Complete Post HTOL Electrical Test 80 80 Pass HTSL, 1123 hours 80 80 Complete Post HTSL Electrical Test 80 80 Pass NOTES HMC1020 (QTR2012-00276) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 160 160 Complete HTOL, 1080 hours 80 80 Complete Post HTOL Electrical Test 80 80 Pass HTSL, 1008 hours 80 80 Complete Post HTSL Electrical Test 80 80 Pass NOTES QTR: 2013- 00235 Wafer Process: BiCMOS-A Rev: 08 HMC1190 (QTR2012-00515) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical Test 333 333 Complete HTOL 80 80 Complete Post HTOL Electrical test 80 80 Pass HTSL 80 80 Complete Post HTSL Electrical Test 80 80 Pass THB 27 27 Complete Post THB Electrical Test 27 27 Pass MSL-1 Preconditioning 80 80 Complete Post MSL1 Electrical Test 80 80 Pass Temp. Cycle (Preconditioned) 80 80 Complete Post Temp Cycle Electrical Test 80 80 Pass ESD Exposure 39 39 Complete Post ESD Electrical Test 39 39 Pass Physical Dimensions 15 15 Pass X-Ray 6 6 Pass Solderability 6 6 Pass NOTES HBM = Class 1B (500V) CDM = Class IV (2kV) QTR: 2013- 00235 Wafer Process: BiCMOS-A Rev: 08 HMC1197 (QTR2012-00516) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical Test 332 332 Complete HTOL 79 79 Complete Post HTOL Electrical test 79 79 Pass HTSL 80 80 Complete Post HTSL Electrical Test 80 80 Pass THB 27 27 Complete Post THB Electrical Test 27 27 Pass MSL-1 Preconditioning 80 80 Complete Post MSL1 Electrical Test 80 80 Pass Temp. Cycle (Preconditioned) 80 80 Complete Post Temp Cycle Electrical Test 80 80 Pass ESD Exposure 39 39 Complete Post ESD Electrical Test 39 39 Pass Physical Dimensions 15 15 Pass X-Ray 6 6 Pass Solderability 6 6 Pass NOTES HBM = Class 1A (250V) CDM = Class II (200V) MM = Pass 100V QTR: 2013- 00235 Wafer Process: BiCMOS-A Rev: 08 HMC7271 (QTR2013-00339) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 168 168 Complete HTOL, 1000 hours 81 81 Complete Post HTOL Electrical Test 81 81 Pass HTSL, 1000 hours 25 25 Complete Post HTSL Electrical Test 25 25 Pass MSL1 Preconditioning 50 50 Complete MSL1 Preconditioning Final Test 50 50 Pass THB (Preconditioned) 25 25 Complete THB Final Test 25 25 Pass Temperature Cycle (Preconditioned) 25 25 Complete Temperature Cycle Final Test 25 25 Pass ESD 12 12 Complete NOTES HBM Class 1A HMC830 (QTR2013-00360) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 159 159 Complete HTOL, 1000 hours (Tj=118°C) 159 159 Complete Post HTOL Electrical Test 159 159 Pass NOTES QTR: 2013- 00235 Wafer Process: BiCMOS-A Rev: 08 HMC830 (QTR2013-00360) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 159 159 Complete HTOL, 1000 hours (Tj=111°C) 159 159 Complete Post HTOL Electrical Test 159 159 Pass NOTES HMC900 (QTR2013-00360) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 159 159 Complete HTOL, 1000 hours (Tj=117°C) 159 159 Complete Post HTOL Electrical Test 159 159 Pass NOTES HMC900 (QTR2013-00360) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 159 159 Complete HTOL, 1000 hours (Tj=116°C) 159 159 Complete Post HTOL Electrical Test 159 159 Pass NOTES QTR: 2013- 00235 Wafer Process: BiCMOS-A Rev: 08 HMC960 (QTR2013-00360) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 318 318 Complete HTOL, 1000 hours (Tj=110°C) 318 318 Complete Post HTOL Electrical Test 318 318 Pass NOTES HMC832A (QTR2013-00386) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical Test 570 570 Complete HTOL 80 80 Complete Post HTOL Electrical test 80 80 Pass HTSL 160 160 Complete Post HTSL Electrical Test 160 160 Pass MSL-1 Preconditioning 318 318 Complete Post MSL1 Electrical Test 318 318 Pass UHAST (Preconditioned) 158 158 Complete Post UHAST Electrical Test 158 158 Pass Temp. Cycle (Preconditioned) 158 158 Complete Post Temp Cycle Electrical Test 158 158 Pass ESD Exposure 12 12 Complete Post ESD Electrical Test 12 12 Pass NOTES HBM = Class 1B (500V) QTR: 2013- 00235 Wafer Process: BiCMOS-A Rev: 08 HMC838 (QTR2014-00291) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical Test 80 80 Complete HTOL, 1000hours, Tj=150°C 80 80 Pass NOTES HMC830 (QTR2013-00446) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical Test 170 170 Pass HTOL, 1000hours, Tj=150°C 80 80 Pass HTSL 30 30 Pass UHAST (MSL1 Preconditioned) 30 30 Pass THB (MSL1 Preconditioned) 30 30 Pass NOTES HMC7846 (Q11709) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical Test 318 318 Pass HTOL 49 49 Pass HTSL 135 135 Pass UHAST (MSL3 Preconditioned) 77 77 Pass ESD 57 57 Pass NOTES 3 lots of 45 units CDM = Pass 1250V HBM = Pass 6000V QTR: 2013- 00235 Wafer Process: BiCMOS-A Rev: 08 HMC1190 (Q11869) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical Test 229 229 Pass HTOL 49 49 Pass HTSL 135 135 Pass THB (MSL3 Preconditioned) 45 45 Pass NOTES 3 lots of 45 units BiCMOS-A Failure Rate Estimate Based on the HTOL test results, a failure rate estimation was determined using the following parameters: With device ambient case temp, Tc = 60°C HMC610 (QTR2008-00003) Operating Junction Temp (Toj) =65°C(338°K) Stress Junction Temp (Tsj) = 160°C(433°K) HMC701 (QTR2011-00002) Operating Junction Temp (Toj) =69°C(342°K) Stress Junction Temp (Tsj) = 160°C(433°K) HMC701 (QTR2012-00249) Operating Junction Temp (Toj) =69°C(342°K) Stress Junction Temp (Tsj) = 175°C(448°K) HMC976 (QTR2012-00028) Operating Junction Temp (Toj) =70°C(343°K) Stress Junction Temp (Tsj) = 110°C(383°K) HMC701 (QTR2012-00343) Operating Junction Temp (Toj) =69°C(342°K) QTR: 2013- 00235 Wafer Process: BiCMOS-A Stress Junction Temp (Tsj) = 178°C(451°K) HMC830 (QTR2012-00024) Operating Junction Temp (Toj) =70°C(343°K) Stress Junction Temp (Tsj) = 136°C(409°K) HMC1020 (QTR2012-00276) Operating Junction Temp (Toj) =68°C(341°K) Stress Junction Temp (Tsj) = 131°C(404°K) HMC1190 (QTR2012-00515) Operating Junction Temp (Toj) =68°C(341°K) Stress Junction Temp (Tsj) = 125°C(398°K) HMC1197 (QTR2012-00516) Operating Junction Temp (Toj) =68°C(341°K) Stress Junction Temp (Tsj) = 110°C(383°K) HMC7271 (QTR2013-00339) Operating Junction Temp (Toj) =68°C(341°K) Stress Junction Temp (Tsj) = 112°C(385°K) HMC830 (QTR2013-00360) Operating Junction Temp (Toj) =70°C(343°K) Stress Junction Temp (Tsj) = 118°C(391°K) HMC830 (QTR2013-00360) Operating Junction Temp (Toj) =70°C(343°K) Stress Junction Temp (Tsj) = 111°C(384°K) HMC900 (QTR2013-00360) Operating Junction Temp (Toj) =67°C(340°K) Stress Junction Temp (Tsj) = 117°C(390°K) HMC900 (QTR2013-00360) Operating Junction Temp (Toj) =67°C(340°K) Stress Junction Temp (Tsj) = 116°C(389°K) Rev: 08 QTR: 2013- 00235 Wafer Process: BiCMOS-A HMC960 (QTR2013-00360) Operating Junction Temp (Toj) =64°C(337°K) Stress Junction Temp (Tsj) = 110°C(383°K) HMC832A (QTR2013-00386) Operating Junction Temp (Toj) =64°C(337°K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC838 (QTR2014-00291) Operating Junction Temp (Toj) =66°C(339K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC830 (QTR2014-00446) Operating Junction Temp (Toj) =70°C(343°K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC830 (Q11709) Operating Junction Temp (Toj) =61°C(334°K) Stress Junction Temp (Tsj) = 125°C(398°K) HMC1190 (Q11869) Operating Junction Temp (Toj) =68°C(341°K) Stress Junction Temp (Tsj) = 125°C(398°K) Device hours: HMC610 (QTR2008-00003) = (78 X 1000hrs) = 78,000 hours HMC701 (QTR2011-00002) = (240 X 1000hrs) = 240,000 hours HMC701 (QTR2012-00249) = (240 X 1033hrs) = 247,920 hours HMC976 (QTR2012-00028) = (80 X 1000hrs) = 80,000 hours Rev: 08 QTR: 2013- 00235 Wafer Process: BiCMOS-A Rev: 08 HMC701 (QTR2012-00343) = (239 X 1084hrs) = 259,076 hours HMC830 (QTR2012-00024) = (80 X 1029hrs) = 82,320 hours HMC1020 (QTR2012-00276) = (80 X 1080hrs) = 86,400 hours HMC7271 (QTR2013-00339) = (81 X 1000hrs) = 81,000 hours HMC1190 (QTR2012-00515) = (80 X 1000hrs) = 80,000 hours HMC1197 (QTR2012-00516) = (79 X 1000hrs) = 79,000 hours HMC830 (QTR2013-00360) = (159 X 1000hrs) = 159,000 hours HMC830 (QTR2013-00360) = (159 X 1000hrs) = 159,000 hours HMC900 (QTR2013-00360) = (159 X 1000hrs) = 159,000 hours HMC900 (QTR2013-00360) = (159 X 1000hrs) = 159,000 hours HMC960 (QTR2013-00360) = (318 X 1000hrs) = 318,000 hours HMC832A (QTR2013-00386) = (80 X 1000hrs) = 80,000 hours HMC838 (QTR2014-00291) = (80 X 1000hrs) = 80,000 hours HMC830 (QTR2014-00446) = (80 X 1000hrs) = 80,000 hours HMC830 (Q11709) = (49 X 1000hrs) = 49,000 hours HMC1190 (Q11869) = (49 X 1000hrs) = 49,000 hours For BiCMOS-A MMIC, Activation Energy = 0.7 eV Acceleration Factor (AF): HMC610 (QTR2008-00003) Acceleration Factor = exp[0.7/8.6x10-5(1/338-1/433)] = 38 HMC701 (QTR2011-00002) Acceleration Factor = exp[0.7/8.6x10-5(1/342-1/433)] = 149 HMC701 (QTR2012-00249) Acceleration Factor = exp[0.7/8.6x10-5(1/342-1/448)] = 279 HMC976 (QTR2012-00028) Acceleration Factor = exp[0.7/8.6x10-5(1/343-1/383)] = 11.9 HMC701 (QTR2012-00343) Acceleration Factor = exp[0.7/8.6x10-5(1/342-1/451)] = 315 HMC830 (QTR2012-00024) Acceleration Factor = exp[0.7/8.6x10-5(1/343-1/409)] = 46 HMC1020 (QTR2012-00276) Acceleration Factor = exp[0.7/8.6x10-5(1/341-1/404)] = 41.4 HMC1190 (QTR2012-00515) Acceleration Factor = exp[0.7/8.6x10-5(1/335-1/398)] = 30.5 HMC1197 (QTR2012-00516) Acceleration Factor = exp[0.7/8.6x10-5(1/335-1/383)] = 13.7 HMC7271 (QTR2013-00339) Acceleration Factor = exp[0.7/8.6x10-5(1/341-1/385)] = 15.3 HMC830 (QTR2013-00360) Acceleration Factor = exp[0.7/8.6x10-5(1/343-1/391)] = 18.4 HMC830 (QTR2013-00360) Acceleration Factor = exp[0.7/8.6x10-5(1/343-1/384)] = 12.6 HMC900 (QTR2013-00360) Acceleration Factor = exp[0.7/8.6x10-5(1/340-1/390)] = 21.5 HMC900 (QTR2013-00360) Acceleration Factor = exp[0.7/8.6x10-5(1/340-1/389)] = 20.4 QTR: 2013- 00235 Wafer Process: BiCMOS-A Rev: 08 HMC960 (QTR2013-00360) Acceleration Factor = exp[0.7/8.6x10-5(1/337-1/383)] = 18.2 HMC832A (QTR2013-00386) Acceleration Factor = exp[0.7/8.6x10-5(1/337-1/423)] = 134.7 HMC838 (QTR2014-00291) Acceleration Factor = exp[0.7/8.6x10-5(1/339-1/423)] = 121.1 HMC830 (QTR2014-00446) Acceleration Factor = exp[0.7/8.6x10-5(1/343-1/423)] = 88.9 HMC830 (Q11709) Acceleration Factor = exp[0.7/8.6x10-5(1/334-1/383)] = 50.3 HMC1190 (Q11869) Acceleration Factor = exp[0.7/8.6x10-5(1/341-1/383)] = 30.5 Equivalent hours = Device hours x Acceleration Factor Equivalent hours = (78,000x38)+(240,000x149)+(247,920x279)+(80,000x11.9)+(259,076x315)+(82,320x46)+(86,400x41.4) +(80,000x30.5)+(79,000x13.7)+(81,000x15.3)+(80,000x134.7)+(159,000x18.4)+(159,000x12.6) +(159,000x21.5)+(159,000x20.4)+(318,000x18.2) +(80,000x121.1) +(80,000x88.9) +(49,000x50.3) +(49,000x30.5) = 2.51x108 hours Since there were no failures and we used a time terminated test, F=0, and R = 2F+2 = 2 The failure rate was calculated using Chi Square Statistic: at 60% and 90% Confidence Level (CL), with 0 units out of spec and a 60°C package backside temp; Failure Rate 60 = [(2)60,2]/(2X 2.51x108 )] = 1.8/ 5.03x108 = 3.64x10-9 failures/hour or 3.6 FIT or MTTF = 2.75x108 Hours 90 = [(2)90,2]/(2X 2.51x108 )] = 4.6/ 5.03x108 = 9.17x10-9 failures/hour or 9.2 FIT or MTTF = 1.09x108 Hours