TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC619 v01.0308 Features The HMC619 is ideal for: P1dB Output Power: +28 dBm • Telecom Infrastructure Gain: 12 dB • Microwave Radio & VSAT Output IP3: +37 dBm • Military & Space Supply Voltage: +12V @ 300 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics Die Size: 3.38 x 2.05 x 0.1 mm Functional Diagram General Description TE Typical Applications LE The HMC619 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 10 GHz. The amplifier provides 12 dB of gain, +37 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 300 mA from a +12V supply. Gain flatness is excellent at ±0.4 dB from DC to 7 GHz making the HMC619 ideal for EW, ECM, Radar and test equipment applications. B SO The HMC619 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 300 mA* O LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Parameter Min. Frequency Range Gain Typ. Max. Min. DC - 3 9.8 Max. Min. 11.5 dB dB Gain Variation Over Temperature 0.014 0.016 0.023 dB/ °C Input Return Loss 12.5 12.5 13.5 dB 21 25 17 dB 26.5 dBm 28.5 28 27.5 dBm Output Third Order Intercept (IP3) 42 40 37 dBm Noise Figure 4 5 7 dB 300 300 300 mA Saturated Output Power (Psat) Supply Current (Idd) (Vdd= 12V Typ.) 25 27.5 24 * Adjust Vgg1 between -2V to 0V to achieve Idd= 300 mA typical. 3 - 94 GHz ±0.4 28 8.5 Units ±0.3 25.5 12 Max. ±0.3 Output Power for 1 dB Compression (P1dB) 9.0 Typ. 7 - 10 Gain Flatness Output Return Loss 12.8 Typ. 3-7 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Gain vs. Temperature 20 18 15 16 14 5 0 GAIN (dB) S21 S11 S22 -5 -10 10 8 TE +25C +85C -55C 4 -20 2 -25 -30 0 0 2 4 6 8 10 0 12 FREQUENCY (GHz) 2 4 8 10 12 LE Output Return Loss vs. Temperature 0 0 -5 +25C +85C -55C -5 -15 B SO -10 +25C +85C -55C -20 -25 -30 0 2 4 6 8 10 -10 -15 -20 -25 0 12 2 4 O 8 10 12 Noise Figure vs. Temperature Reverse Isolation vs. Temperature 0 15 -10 +25C +85C -55C 12 NOISE FIGURE (dB) -20 6 FREQUENCY (GHz) FREQUENCY (GHz) ISOLATION (dB) 6 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) 3 12 6 -15 RETURN LOSS (dB) RESPONSE (dB) 10 +25C +85C -55C -30 -40 LINEAR & POWER AMPLIFIERS - CHIP Gain & Return Loss 9 6 3 -50 -60 0 2 4 6 8 FREQUENCY (GHz) 10 12 0 0 1 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 95 HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Psat vs. Temperature 32 30 30 28 28 Psat (dBm) 32 26 +25C +85C -55C 26 +25C +85C -55C 24 TE 24 22 22 20 20 0 1 2 3 4 5 6 7 8 9 10 0 FREQUENCY (GHz) 1 2 3 4 5 6 7 8 10 LE Output IP3 vs. Output Power @ 5 GHz 45 50 40 30 IP3 (dBm) 35 B SO 45 +25C +85C -55C 25 20 0 2 4 6 8 10 12 11.5V 12V 12.5V 40 35 30 0 3 6 FREQUENCY (GHz) 9 12 15 18 21 OUTPUT POWER (dBm) Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) O Gain, Power & Output IP3 vs. Supply Voltage @ 5 GHz, Fixed Vgg 45 40 35 30 25 Gain P1dB Psat OIP3 20 15 10 11.5 12 12.5 Vdd (V) 3 - 96 9 FREQUENCY (GHz) Output IP3 vs. Temperature IP3 (dBm) LINEAR & POWER AMPLIFIERS - CHIP 3 P1dB (dBm) P1dB vs. Temperature For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 24 27 HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Power Compression @ 5 GHz Power Compression @ 2 GHz Pout Gain PAE 24 20 16 8 4 0 -10 -5 0 5 10 15 4 -5 0 LE Pout Gain PAE 20 B SO Pout (dBm), GAIN (dB), PAE (%) 24 0 -10 8 5 10 15 20 15 20 10 28 4 12 Power Dissipation 32 8 16 INPUT POWER (dBm) Power Compression @ 10 GHz 12 3 20 0 -10 20 INPUT POWER (dBm) 16 Pout Gain PAE 24 TE 12 28 -5 0 5 10 15 20 9 8 7 6 5 4 3 -10 -5 INPUT POWER (dBm) O Absolute Maximum Ratings Max Pdis @ 85C 2 GHz 6 GHz 0 5 10 INPUT POWER (dBm) Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +13 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) -2.5 to 0 Vdc +11.5 299 Gate Bias Voltage (Vgg2) +4V to +6V +12.0 300 RF Input Power (RFIN)(Vdd = +10 Vdc) +27 dBm +12.5 301 Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 98 mW/°C above 85 °C) 6.37 W Thermal Resistance (channel to die bottom) 10.2 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C LINEAR & POWER AMPLIFIERS - CHIP 28 Pout (dBm), GAIN (dB), PAE (%) 32 POWER DISSIPATION (W) Pout (dBm), GAIN (dB), PAE (%) 32 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 97 HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Outline Drawing 3 - 98 TE LE B SO Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002 O LINEAR & POWER AMPLIFIERS - CHIP 3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Pad Descriptions Description 1 IN This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required. 2 Vgg2 Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +5V should be applied to Vgg2. 3 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. 4 ACG2 Low frequency termination. Attach bypass capacitor per application circuit herein. 5 OUT & Vdd RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 6, 7 ACG3, ACG4 Low frequency termination. Attach bypass capacitor per application circuit herein. LE B SO 8 Interface Schematic GND Die bottom must be connected to RF/DC ground. O Die Bottom Vgg1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 LINEAR & POWER AMPLIFIERS - CHIP Function TE Pad Number 3 - 99 HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Assembly Diagram TE LE B SO Application Circuit O LINEAR & POWER AMPLIFIERS - CHIP 3 NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA 3 - 100 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC619 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Wire Bond 0.076mm (0.003”) TE 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. B SO Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Figure 1. LE Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting O The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. 3 LINEAR & POWER AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 101