HMC907 Die Data Sheet PDF

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HMC907
v01.0512
AMPLIFIERS - LINIAR & POWER - CHIP
GaAs pHEMPT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Typical Applications
Features
The HMC907 is ideal for:
High P1dB Output Power: +27 dBm
• Test Instrumentation
High Gain: 14 dB
• Microwave Radio & VSAT
High Output IP3: +38 dBm
• Military & Space
Single Supply: +10V @ 350 mA
• Telecom Infrastructure
50 Ohm Matched Input/Output
• Fiber Optics
Die Size: 2.91 x 1.33 x 0.1 mm
Functional Diagram
General Description
The HMC907 is a GaAs MMIC pHEMT Distributed
Power Amplifier die which operates between 0.2 and
22 GHz. This self-biased power amplifier provides
14 dB of gain, 38 dBm output IP3 and +27 dBm of
output power at 1 dB gain compression while requiring only 350mA from a +10V supply. Gain flatness is
excellent at ±0.6 dB from DC to 12 GHz making the
HMC907 ideal for EW, ECM, Radar and test equipment applications. The HMC907 amplifier I/Os are
internally matched to 50 Ohms facilitating integration
into Mutli-Chip-Modules (MCMs). All data is taken
with the chip connected via two 0.025mm (1 mil) wire
bonds of minimal 0.31 mm (12 mils) length.
Electrical Specifications, TA = +25 °C, Vdd = +10V, Idd = 350mA
Parameter
Min.
Frequency Range
Gain
Max.
Min.
12
13.5
Typ.
Max.
Min.
8 - 16
12
13.5
12.5
Typ.
Max.
Units
16 - 22
GHz
14
dB
Gain Flatness
±0.6
±0.5
±0.3
dB
Gain Variation Over Temperature
0.008
0.008
0.009
dB/ °C
dB
Input Return Loss
15
15
15
Output Return Loss
15
20
15
dB
25.5
dBm
28.5
dBm
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
1
Typ.
0.2 - 8
23
26
28.5
25
27
29.5
23
Output Third Order Intercept (IP3)
37
38
37
dBm
Noise Figure
3.5
2.5
3.0
dB
Supply Current
(Idd) (Vdd= 10V)
350
350
350
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC907
v01.0512
GaAs pHEMPT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Gain & Return Loss
Gain vs. Temperature
16
14
10
GAIN (dB)
RESPONSE (dB)
20
S21
S11
S22
0
-10
-20
+25C
+85C
-55C
10
8
6
-40
0
5
10
15
20
25
0
30
4
8
Input Return Loss vs. Temperature
-10
-10
RETURN LOSS (dB)
0
-20
+25C
+85C
-55C
-40
20
24
+25C
+85C
-55C
-20
-30
-40
0
4
8
12
16
20
24
0
4
8
FREQUENCY (GHz)
16
20
24
Noise Figure vs. Frequency
0
7
-10
6
+25C
+85C
-55C
-20
12
FREQUENCY (GHz)
NOISE FIGURE (dB)
ISOLATION (dB)
16
Output Return Loss vs. Temperature
0
-30
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
-30
-40
-50
5
4
3
2
1
0
-60
0
4
8
12
16
FREQUENCY (GHz)
2
12
-30
RETURN LOSS (dB)
AMPLIFIERS - LINIAR & POWER - CHIP
30
20
24
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC907
v01.0512
GaAs pHEMPT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
P1dB vs. Frequency
Psat vs. Temperature
32
+25C
+85C
-55C
30
28
Psat (dBm)
P1dB (dBm)
30
26
28
+25C
+85C
-55C
26
24
24
22
22
20
20
0
4
8
12
16
20
24
0
4
8
FREQUENCY (GHz)
12
16
20
24
FREQUENCY (GHz)
Output IP3 vs. Temperature
@ Pout = 16 dBm Tone
Output IP3 vs. Output Power @ 12 GHz
50
50
+25C
+85C
-55C
45
9V
10V
11V
45
40
IP3 (dBm)
IP3 (dBm)
AMPLIFIERS - LINIAR & POWER - CHIP
32
35
30
40
35
30
25
25
0
4
8
12
16
20
24
10
12
14
FREQUENCY (GHz)
16
18
20
22
24
OUTPUT POWER (dBm)
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Gain, Power & Output IP3 vs.
Supply Voltage @ 12 GHz
45
40
35
30
25
Gain
P1dB
20
Psat
IP3
15
10
9
9.5
10
10.5
11
Vdd (V)
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC907
v01.0512
GaAs pHEMPT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Power Compression @ 12 GHz
Power Compression @ 2 GHz
4
28
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
32
Pout
Gain
PAE
24
20
16
12
8
4
0
28
Pout
Gain
PAE
24
20
16
12
8
4
0
0
4
8
12
16
20
0
4
INPUT POWER (dBm)
8
12
16
20
16
20
INPUT POWER (dBm)
Power Dissipation
Power Compression @ 20 GHz
32
6
28
Pout
Gain
PAE
24
POWER DISSIPATION (W)
Pout (dBm), GAIN (dB), PAE (%)
AMPLIFIERS - LINIAR & POWER - CHIP
32
20
16
12
8
4
0
5
4
3
Max Pdis @ 85C
2GHz
20GHz
2
1
0
0
4
8
12
INPUT POWER (dBm)
16
20
0
4
8
12
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC907
v01.0512
GaAs pHEMPT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Typical Supply Current vs. Vdd
AMPLIFIERS - LINIAR & POWER - CHIP
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+11 Vdc
RF Input Power (RFIN)(Vdd = +11V)
Channel Temperature
Vdd (V)
Idd (mA)
+20 dBm
+9
350
150 °C
+10
350
+11
350
Continuous Pdiss (T= 85 °C)
(derate 63 mW/°C above 85 °C)
4.1 W
Thermal Resistance
(channel to die bottom)
15.8 °C/W
Storage Temperature
-65 to 150°C
Operating Temperature
-55 to 85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
This die utilizes fragile air bridges. Any pick-up tools used must not contact the die in the cross hatched area.
Die Packaging Information
[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
5
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. DIE THICKNESS IS 0.004 (0.100)
3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE IS ±.002
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC907
v01.0512
GaAs pHEMPT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
AMPLIFIERS - LINIAR & POWER - CHIP
Pad Descriptions
6
Pad Number
Function
Description
1
RFIN
This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
2
OUT & Vdd
RF output for amplifier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC907
v01.0512
GaAs pHEMPT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
AMPLIFIERS - LINIAR & POWER - CHIP
Assembly Diagram
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing 500mA
7
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC907
v01.0512
GaAs pHEMPT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
AMPLIFIERS - LINIAR & POWER - CHIP
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force
of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds
should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a
nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
8
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]