TVS Diode Arrays (SPA®® Diodes) Lightning Surge Protection- SP3312T Series SP3312T Series 3.3V 15A Diode Array RoHS Pb GREEN Description The SP3312T integrates 4 channels (2 differential pair) of low capacitance diodes to protect sensitive I/O pins against lightning induced surge events and ESD. This robust device can safely absorb up to 15A per IEC61000-4-5 (tp=8/20μs) without performance degradation and a minimum ±30kV ESD per IEC61000-4-2 international standard. The low loading capacitance makes the SP3312T ideal for protecting high-speed signal pins. Pinout Features • E SD, IEC61000-4-2, ±30kV contact, ±30kV air • L ow leakage current of 0.01µA (TYP) at 3.3V 6 • E FT, IEC61000-4-4, 40A (t =5/50ns) 7 • L ightning, IEC61000-4-5, 15A (t =8/20µs) • Low variation in capacitance vs. bias voltage: 0.3pF Typical(VR=0 to 2.5V) 8 • L ow capacitance of 1.3pF (TYP) per I/O 4 5 3 p 2 p 1 Functional Block Diagram • AEC-Q101 qualified Applications Pin1 and 8 Pin2 and 7 Pin3 and 6 Pin4 and 5 • 10/100/1000 Ethernet • Security Cameras • Integrated magnetics/ RJ45 connectors • Industrial Controls • LAN/WAN Equipment • Notebook & Desktop Computers Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ©2015 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/16/15 SP3312T Series 11 TVS Diode Arrays (SPA®® Diodes) Lightning Surge Protection- SP3312T Series Absolute Maximum Ratings Symbol Thermal Information Parameter Value Parameter Units Rating Units -55 to 150 °C Peak Current (tp=8/20μs) 15.0 A PPK Peak Pulse Power (tp=8/20µs) 250 W Maximum Junction Temperature 150 °C TOP Operating Temperature -40 to 125 ºC Maximum Lead Temperature (Soldering 20-40s) 260 °C TSTOR Storage Temperature -55 to 150 °C SP4062 IPP Storage Temperature Range CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (TOP=25ºC) Parameter Symbol Reverse Standoff Voltage VRWM Test Conditions Min Typ Max Units 3.3 V 0.05 µA Snap Back Voltage VSB ISB=50mA Reverse Leakage Current ILEAK VR=3.3V, I/O to GND 0.01 IPP=1A, tp=8/20µs, Fwd 6.0 V IPP=2A, tp=8/20µs, Fwd 7.0 V IPP=10A, tp=8/20µs, Fwd 13.0 V TLP, tp=100ns, I/O to GND 0.40 Ω Clamp Voltage1 VC Dynamic Resistance2 RDYN ESD Withstand Voltage1 VESD Variation in Capacitance with Reverse Bias Diode Capacitance1 2.8 V IEC61000-4-2 (Contact) ±30 kV IEC61000-4-2 (Air) ±30 kV Pins 1, 8 to 2, 7 and pins 3, 6 to 4, 5 VR= 0 to 2.5V, f= 1MHz 0.3 pF Reverse Bias=0V 1.3 pF CI/O-GND Note: 1 2 Parameter is guaranteed by design and/or device characterization. Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. Clamping Voltage vs IPP Capacitance vs. Reverse Bias 1.5 1.2 15.0 Capacitance (pF) Clamp Voltage (VC ) 20.0 10.0 5.0 0.0 0.0 5.0 10.0 Revision: 02/16/15 0.6 0.3 0.0 15.0 Peak Pulse Current-IPP (A) ©2015 Littelfuse, Inc. Specifications are subject to change without notice. 0.9 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 Bias Voltage (V) 3 3.3 SP3312T Series 2 2 TVS Diode Arrays (SPA®® Diodes) Lightning Surge Protection- SP3312T Series Pulse Waveform 22 110% 20 100% 18 90% 16 80% Percent of IPP TLP Current (A) Transmission Line Pulsing (TLP) Plot 14 12 10 8 70% 60% 50% 40% 6 30% 4 20% 2 10% 0 0 2 4 6 8 10 12 14 0% 16 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time (μs) TLP Voltage (V) Soldering Parameters Pre Heat Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C tP TP Temperature Reflow Condition TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) 25 Product Characteristics Critical Zone TL to TP Ramp-up tS time to peak temperature Time Ordering Information Lead Plating Pre-Plated Frame Part Number Package Marking Min. Order Qty. Lead Material Copper Alloy SP3312TUTG µDFN-08 33H 3000 Lead Coplanarity 0.0004 inches (0.102mm) Substrate material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. ©2015 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/16/15 SP3312T Series 3 3 TVS Diode Arrays (SPA®® Diodes) Lightning Surge Protection- SP3312T Series Part Numbering System Part Marking System SP 3312T U T G 33 * G= Green TVS Diode Arrays (SPA® Diodes ) Product Series 33 = SP3312T Assembly Site T= Tape & Reel Package U= µDFN-08 Series Package Dimensions — µDFN-08 Top View Package µDFN-08 (2.0x1.0mm) JEDEC MO-229 Symbol Millimeters Nom Max Min Nom Max A 0.37 0.40 0.43 0.014 0.016 0.017 A1 0.00 0.02 0.05 0.000 0.001 0.002 0.127 Ref A3 0.005 Ref b 0.20 0.25 0.30 0.008 0.010 0.012 D 2.60 2.00 2.10 0.074 0.079 0.082 E 0.90 1.00 1.10 0.035 0.040 0.043 R 0.05 0.10 0.15 0.002 0.004 0.006 0.40 0.012 0.50 BSC e Side View Inches Min L 0.30 0.35 0.020 BSC 0.014 0.016 Bottom View Embossed Carrier Tape & Reel Specification — µDFN-08 ©2015 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 02/16/15 SP3312T Series 4 4