Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC969 v00.1210 Amplifiers - Linear & Power - Chip 3 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz Typical Applications Features The HMC969 is ideal for: Saturated Output Power: +31 dBm @ 15% PAE • Point-to-Point Radios Output IP3: +38 dBm • Point-to-Multi-Point Radios High Gain: 22 dB • VSAT & SATCOM DC Supply: +6V @ 900 mA • Military & Space No External Matching Required Die Size: 2.77 x 2.32 x 0.1 mm Functional Diagram General Description The HMC969 is a 4 stage GaAs pHEMT MMIC 1 Watt Power Amplifier which operates between 40 and 43.5 GHz. The HMC969 provides 22 dB of gain, +31 dBm of saturated output power, and 15% PAE from a +6V supply. With a very good IP3 of 38 dBm, the HMC969 is ideal for linear applications including military and space as well as point-to-point and point-to-multi-point radios. All data is taken with the chip in a 50 Ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. Electrical Specifications TA = +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 900 mA [1] Parameter Min. Frequency Range Gain Typ. 40 - 43.5 Units GHz 22 dB 0.03 dB/ °C Input Return Loss 14 dB Output Return Loss 27 dB Output Power for 1 dB Compression (P1dB) 28 dBm Gain Variation Over Temperature 19 Max. Saturated Output Power (Psat) 31 dBm Output Third Order Intercept (IP3)[2] 38 dBm Total Supply Current (Idd) 900 mA [1] Adjust Vgg between -2 to 0V to achieve Idd = 900 mA typical. [2] Measurement taken at +6V @ 900 mA, Pout / Tone = +18 dBm 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC969 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature 30 30 26 S21 S11 S22 0 -10 18 -20 +25C +85C -55C 14 -30 -40 10 38 39 40 41 42 43 FREQUENCY (GHz) 44 45 46 39 40 41 43 44 45 Output Return Loss vs. Temperature 0 0 -5 RETURN LOSS (dB) +25C +85C -55C -5 -10 -15 -20 -25 +25C +85C -55C -10 -15 -20 -25 -30 -35 -40 -30 39 40 41 42 43 44 39 45 40 41 42 43 44 45 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature P1dB vs. Supply Voltage 36 36 34 34 +25C +85C -55C 32 P1dB (dBm) P1dB (dBm) 42 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) 3 22 Amplifiers - Linear & Power - Chip 10 GAIN (dB) RESPONSE (dB) 20 30 30 28 28 26 26 24 5.0V 5.5V 6.0V 32 24 40 41 42 FREQUENCY (GHz) 43 44 40 41 42 43 44 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-2 HMC969 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz Psat vs. Temperature Psat vs. Supply Voltage 36 36 +25C +85C -55C Psat (dBm) 32 30 32 30 28 28 26 26 24 40 41 42 43 44 40 41 FREQUENCY (GHz) 43 44 43 44 Psat vs. Supply Current (Idd) 36 36 34 32 800mA 900mA 1000mA 34 800mA 900mA 1000mA Psat (dBm) P1dB (dBm) 42 FREQUENCY (GHz) P1dB vs. Supply Current (Idd) 30 32 30 28 28 26 26 24 24 40 41 42 43 44 40 41 FREQUENCY (GHz) 42 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +18 dBm Output IP3 vs. Supply Current, Pout/Tone = +18 dBm 45 40 40 IP3 (dBm) 45 35 +25C +85C -55C 30 35 800mA 900mA 1000mA 30 25 25 40 41 42 FREQUENCY (GHz) 3-3 5.0V 5.5V 6.0V 34 24 IP3 (dBm) Amplifiers - Linear & Power - Chip 3 Psat (dBm) 34 43 44 40 41 42 43 44 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC969 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +18 dBm Output IM3 @ Vdd = +5V 45 60 50 IM3 (dBc) IP3 (dBm) 40 35 40 GHz 41 GHz 42 GHz 43 GHz 44 GHz 20 5.0V 5.5V 6.0V 30 30 10 25 0 40 41 42 43 44 10 12 14 16 FREQUENCY (GHz) 60 50 50 40 40 30 24 20 22 24 40 GHz 41 GHz 42 GHz 43 GHz 44 GHz 10 0 0 10 12 14 16 18 20 22 24 10 12 14 16 Pout/TONE (dBm) 18 Pout/TONE (dBm) Power Compression @ 41 GHz Power Compression @ 42 GHz 40 40 35 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 22 30 20 40 GHz 41 GHz 42 GHz 43 GHz 44 GHz 10 20 Output IM3 @ Vdd = +6V 60 IM3 (dBc) IM3 (dBc) Output IM3 @ Vdd = +5.5V 20 18 Pout/TONE (dBm) Pout Gain PAE 30 25 20 15 10 5 0 35 Amplifiers - Linear & Power - Chip 3 40 Pout Gain PAE 30 25 20 15 10 5 0 0 3 6 9 INPUT POWER (dBm) 12 15 0 3 6 9 12 15 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-4 HMC969 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz Gain & Power vs. Supply Current @ 41 GHz Reverse isolation vs. Temperature 40 +25C +85C -55C -20 -30 -40 -50 Gain P1dB Psat 35 30 25 20 15 -60 36 37 38 39 40 800 41 900 Gain & Power vs. Supply Voltage @ 41 GHz 1000 Idd (mA) FREQUENCY (GHz) Power Dissipation 10 40 9 Gain P1dB Psat 35 POWER DISSIPATION (W) Gain (dB), P1dB (dBm), Psat (dBm) Amplifiers - Linear & Power - Chip 3 ISOLATION (dB) -10 Gain (dB), P1dB (dBm), Psat (dBm) 0 30 25 20 40GHz 41GHz 42GHz 43GHz 8 7 6 5 4 3 2 1 0 15 5 5.5 6 0 1 2 3 Vdd (V) 4 5 6 7 8 9 10 11 12 13 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) +7V RF Input Power (RFIN) Channel Temperature Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +20 dBm +5.0 900 150 °C +5.5 900 +6.0 900 Continuous Pdiss (T= 85 °C) (derate 15.5 mW/°C above 85 °C) 6.45 W Thermal Resistance (channel to die bottom) 10.1 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 900 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC969 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS 0.0026” [0.066] SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size ± .002 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - Chip 3 3-6 HMC969 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz Pad Descriptions Amplifiers - Linear & Power - Chip 3 3-7 Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2, 6 Vgg Gate control for amplifier. External bypass capacitors of 100 pF, 0.01 µF, and 4.7 µF are required on the pad that is used. 3, 5 Vdd1, Vdd2 Drain bias voltage for amplifier. External bypass capacitors of 100 pF, 0.01 µF and 4.7 µF are required on each pad. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic Application Circuit 1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC969 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz Application Circuit 2 Amplifiers - Linear & Power - Chip 3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-8 HMC969 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz Assembly Diagram Amplifiers - Linear & Power - Chip 3 3-9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC969 v00.1210 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. 3 Amplifiers - Linear & Power - Chip The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3 - 10