Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC516LC5 v03.0514 LOW NOISE AMPLIFIERS - SMT SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz Typical Applications Features The HMC516LC5 is ideal for use as a LNA or driver amplifier for: Noise Figure: 2 dB • Point-to-Point Radios OIP3: +25 dBm • Point-to-Multi-Point Radios & VSAT Single Supply: +3V @ 65 mA • Test Equipment and Sensors 50 Ohm Matched Input/Output • Military RoHS Compliant 5x5 mm Package Functional Diagram General Description Gain: 20 dB The HMC516LC5 is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless “Pb free” RoHS compliant SMT package. The HMC516LC5 provides 20 dB of small signal gain, 2 dB of noise figure and has an output IP3 of +25 dBm. The P1dB output power of +13 dBm enables the LNA to also function as a LO driver for balanced, I/Q or image reject mixers. The HMC516LC5 allows the use of surface mount manufacturing techniques. Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V Parameter Min. Frequency Range Gain Gain Variation Over Temperature 1 Typ. Max. Min. 9 - 12 17.5 Typ. Max. 12 - 18 20 18 Units GHz 20.5 dB 0.015 0.025 0.015 0.025 dB/ °C Noise Figure 2.0 2.5 2.0 2.5 dB Input Return Loss 10 10 dB Output Return Loss 12 12 dB Output Power for 1 dB Compression (P1dB) 13 14 dBm Saturated Output Power (Psat) 15 16 dBm Output Third Order Intercept (IP3) 25 Supply Current (Idd)(Vdd = +3V) 65 25 88 65 dBm 88 mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC516LC5 v03.0514 SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz Broadband Gain & Return Loss Gain vs. Temperature 25 20 20 10 18 S21 S11 S22 5 GAIN (dB) RESPONSE (dB) 15 0 -5 16 +25C +85C -40C 14 -10 12 -15 -20 10 4 6 8 10 12 14 16 18 20 22 8 10 FREQUENCY (GHz) Input Return Loss vs. Temperature 14 16 18 Output Return Loss vs. Temperature 0 0 +25C +85C -40C -5 +25C +85C -40C -5 RETURN LOSS (dB) RETURN LOSS (dB) 12 FREQUENCY (GHz) -10 -15 -10 -15 -20 LOW NOISE AMPLIFIERS - SMT 22 -25 -20 -30 8 10 12 14 16 18 8 10 FREQUENCY (GHz) Noise Figure vs. Temperature 14 16 18 16 18 Output IP3 vs. Temperature 10 35 9 30 8 25 7 6 IP3 (dBm) NOISE FIGURE (dB) 12 FREQUENCY (GHz) +25C +85C -40C 5 4 3 20 15 +25C +85C -40C 10 2 5 1 0 0 8 10 12 14 FREQUENCY (GHz) 16 18 8 10 12 14 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC516LC5 v03.0514 SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz Psat vs. Temperature 20 18 18 16 16 14 14 Psat (dBm) P1dB (dBm) 20 12 10 8 +25C +85C -40C 6 12 10 8 +25C +85C -40C 6 4 4 2 2 0 0 8 10 12 14 16 18 8 10 12 FREQUENCY (GHz) 14 16 18 FREQUENCY (GHz) Reverse Isolation vs. Temperature Power Compression @ 12 GHz 25 0 Pout (dBm), GAIN (dB), PAE (%) -10 -20 ISOLATION (dB) LOW NOISE AMPLIFIERS - SMT P1dB vs. Temperature -30 +25C +85C -40C -40 -50 -60 -70 -80 8 10 12 14 16 20 10 5 0 -22 18 Pout Gain PAE 15 -20 -18 -16 FREQUENCY (GHz) -14 -12 -10 -8 -6 -4 -2 0 INPUT POWER (dBm) 24 7 22 6 20 5 Gain 4 18 3 16 14 12 P1dB 2 Noise Figure 1 0 10 2.5 NOISE FIGURE (dB) GAIN (dB), P1dB (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 12 GHz 3 3.5 Vdd (V) 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC516LC5 v03.0514 SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +4 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +3.0 Vdc) +5 dBm +2.5 61 Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 14 mW/°C above 85 °C) 1.25 W Thermal Resistance (channel to die bottom) 71 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A +3.0 65 +3.5 69 Note: Amplifier will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing LOW NOISE AMPLIFIERS - SMT Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL 3. DIMENSIONS ARE IN INCHES [MILLIMETERS] 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND Package Information Part Number Package Body Material Lead Finish HMC516LC5 Alumina, White Gold over Nickel MSL Rating MSL3 [1] Package Marking [2] H516 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC516LC5 v03.0514 SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz LOW NOISE AMPLIFIERS - SMT Pin Descriptions 5 Pin Number Function Description 1, 2, 6 - 19, 23 - 25, 27, 29, 31, 32 N/C This pin may be connected to RF/DC ground. Performance will not be affected. 4 RFIN This pin is AC coupled and matched to 50 Ohms. 30, 28, 26 Vdd1, 2, 3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 2.2 µF are required. 21 RFOUT This pin is AC coupled and matched to 50 Ohms. 3, 5, 20, 22 GND These pins and package bottom must be connected to RF/DC ground. Interface Schematic Application Circuit Component Value C1, C2, C3 100 pF C4, C5, C6 2.2 µF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC516LC5 v03.0514 SMT PHEMT LOW NOISE AMPLIFIER, 9 - 18 GHz LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 110431 Item Description J1 - J2 PCB Mount K Connector J3 2 mm DC Header C1 - C3 100 pF Capacitor, 0402 Pkg. C4 - C6 2.2 µF Capacitor, Tantalum U1 HMC516LC5 Amplifier PCB [2] 109001 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6