Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC452QS16G / 452QS16GE v01.0205 11 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Typical Applications Features The HMC452QS16G / HMC452QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +48 dBm • GSM, GPRS & EDGE 9 dB Gain @ 2100 MHz • CDMA & W-CDMA 53% PAE @ +31 dBm Pout • CATV/Cable Modem +24 dBm CDMA2000 Channel Power@ -45 dBc ACP • Fixed Wireless & WLL Single +5V Supply 22.5 dB Gain @ 400 MHz LINEAR & POWER AMPLIFIERS - SMT Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm2 General Description Functional Diagram The HMC452QS16G & HMC452QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +43 dBm at 0.4 GHz or +48 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC452QS16G(E)ideal power amplifiers for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications. Electrical Specifi cations, TA = +25°C, Vs= +5V, VPD = +5V [1] Parameter Min. Frequency Range Gain Typ. Max. Min. 400 - 410 20 Gain Variation Over Temperature 22.5 0.012 Typ. Max. Min. 450 - 496 19 0.02 21.5 0.012 Typ. Max. Min. 810 - 960 13 0.02 15.5 0.012 Typ. Max. Min. 1710 - 1990 7.5 0.02 10 0.012 6.5 0.02 Typ. Max. Units 2010 - 2170 MHz 9 dB 0.012 0.02 dB/C Input Return Loss 13 15 9 17 11 dB Output Return Loss 7 8 12 15 20 dB 31 dBm 32.5 dBm 48 dBm Output Power for 1dB Compression (P1dB) 27.5 Saturated Output Power (Psat) Output Third Order Intercept (IP3) [2] Noise Figure 30.5 27.5 31 40 43 30.5 27 31 41 44 30 28 31 45 48 31 28 31.5 45 48 45 7 7 7 7 7.5 dB Supply Current (Icq) 485 485 485 485 485 mA Control Current (IPD) 10 10 10 10 10 mA [1] Specifications and data reflect HMC452QS16G measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. [2] Two-tone input power of -10 dBm per tone, 1 MHz spacing. 11 - 134 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 400 MHz Gain vs. Temperature @ 400 MHz 20 10 S21 GAIN (dB) RESPONSE (dB) 15 S11 5 S22 0 -5 -10 -15 0.1 0.2 0.3 0.4 0.5 0.6 0.7 25 24 23 22 21 20 19 18 17 16 15 14 13 12 0.35 +25 C -40 C 0.37 0.39 0.41 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ 400 MHz Output Return Loss vs. Temperature @ 400 MHz +25 C +85 C -40 C -6 RETURN LOSS (dB) RETURN LOSS (dB) -4 -8 -10 -12 0.43 0.45 -4 -6 -8 -10 -12 +25 C +85 C -40 C -14 -14 0.37 0.39 0.41 0.43 -16 0.35 0.45 0.37 P1dB vs. Temperature @ 400 MHz 33 32 32 31 31 Psat (dBm) 34 33 30 +25 C 28 +85 C -40 C 27 30 29 26 25 0.41 FREQUENCY (GHz) +85 C -40 C 27 25 0.39 +25 C 28 26 0.37 0.41 Psat vs. Temperature @ 400 MHz 34 29 0.39 FREQUENCY (GHz) FREQUENCY (GHz) P1dB (dBm) 0.45 -2 -2 24 0.35 0.43 0 0 -16 0.35 11 +85 C 0.43 0.45 LINEAR & POWER AMPLIFIERS - SMT 25 24 0.35 0.37 0.39 0.41 0.43 0.45 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 135 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 400 MHz 10 48 9 46 8 NOISE FIGURE (dB) 50 OIP3 (dBm) 44 11 Noise Figure vs. Temperature @ 400 MHz 42 40 38 +25 C 36 +85 C 34 -40 C 5 +25 C 4 +85 C 3 -40 C 1 30 0.35 0.37 0.39 0.41 0.43 0 0.35 0.45 0.37 0.39 FREQUENCY (GHz) +25 C +85 C -40 C -20 -25 -30 -35 0.35 0.37 0.39 0.41 0.43 0.45 GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) ISOLATION (dB) -5 -15 0.45 50 45 40 35 30 25 20 Gain P1dB 15 10 4.5 4.75 Psat OIP3 5 FREQUENCY (GHz) 5.25 5.5 Vs (Vdc) ACPR vs. Supply Voltage @ 400 MHz W-CDMA , 64 DPCH Power Compression @ 400 MHz -10 55 50 -15 Pout 45 -20 Gain PAE 40 W-CDMA Frequency: 400 MHz Integration BW: 3.84 MHz 64 DPCH -25 ACPR (dBc) 35 30 25 20 -30 -35 4.5V 5V -40 5.5V -45 -50 15 -55 10 -60 5 -65 0 -10 0.43 Gain, Power & IP3 vs. Supply Voltage @ 400 MHz 0 -10 0.41 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 400 MHz Pout (dBm), Gain (dB), PAE (%) LINEAR & POWER AMPLIFIERS - SMT 6 2 32 Source ACPR -70 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) 11 - 136 7 8 10 12 14 8 10 12 14 16 18 20 22 24 Channel Power (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 470 MHz Gain vs. Temperature @ 470 MHz 24 25 23 20 22 21 20 10 S21 GAIN (dB) S11 5 S22 0 -5 18 +25 C 17 +85 C 16 -40 C 11 15 14 -10 -15 0.1 19 13 0.2 0.3 0.4 0.5 0.6 12 0.43 0.7 0.45 0.47 0.49 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ 470 MHz Output Return Loss vs. Temperature @ 470 MHz 0 0 -2 -2 0.51 0.53 0.51 0.53 -6 RETURN LOSS (dB) RETURN LOSS (dB) -4 +25 C +85 C -40 C -8 -10 -12 -14 -4 -6 -8 -10 -12 +25 C +85 C -40 C -16 -14 -18 -20 0.43 0.45 0.47 0.49 0.51 -16 0.43 0.53 0.45 FREQUENCY (GHz) 34 34 33 33 32 32 31 31 30 29 +25 C +85 C -40 C 27 26 30 29 +25 C 28 +85 C -40 C 27 26 25 24 0.43 0.49 Psat vs. Temperature @ 470 MHz Psat (dBm) P1dB (dBm) P1dB vs. Temperature @ 470 MHz 28 0.47 FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - SMT RESPONSE (dB) 15 25 0.45 0.47 0.49 FREQUENCY (GHz) 0.51 0.53 24 0.43 0.45 0.47 0.49 0.51 0.53 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 137 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 470 MHz 10 48 9 46 8 NOISE FIGURE (dB) 50 42 40 +25 C +85 C 38 -40 C 36 6 5 1 0.47 0.49 0.51 -40 C 3 32 0.45 +25 C +85 C 4 2 0 0.43 0.53 0.45 0.47 FREQUENCY (GHz) ISOLATION (dB) -10 +25 C +85 C -40 C -25 -30 -35 -40 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) -5 -20 0.51 0.53 Gain, Power & IP3 vs. Supply Voltage @ 470 MHz 0 -15 0.49 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 470 MHz 50 45 40 35 30 25 20 Gain P1dB 15 10 4.5 4.75 Psat OIP3 5 FREQUENCY (GHz) 5.25 5.5 Vs (Vdc) ACPR vs. Supply Voltage @ 470 MHz W-CDMA, 64 DPCH Power Compression @ 470 MHz -10 55 50 -15 Pout 45 -20 Gain PAE 40 W-CDMA Frequency: 470 MHz Integration BW: 3.84 MHz 64 DPCH -25 ACPR (dBc) 35 30 25 20 -30 -35 -40 4.5V -45 5V 5.5V -50 15 -55 10 -60 5 -65 0 -10 Source ACPR -70 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) 11 - 138 7 34 30 0.43 Pout (dBm), Gain (dB), PAE (%) LINEAR & POWER AMPLIFIERS - SMT OIP3 (dBm) 44 11 Noise Figure vs. Temperature @ 470 MHz 8 10 12 14 8 10 12 14 16 18 20 22 24 Channel Power (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 900 MHz Gain vs. Temperature @ 900 MHz 20 18 15 17 16 15 5 S21 GAIN (dB) S11 0 S22 -5 14 13 11 +25 C +85 C 12 -40 C 11 -10 10 -15 -20 0.4 9 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 8 0.7 1.4 0.75 0.8 0.85 0.9 0.95 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ 900 MHz Output Return Loss vs. Temperature @ 900 MHz 1.05 1.1 1.05 1.1 1.05 1.1 0 0 -2 +25 C +85 C -40 C -5 -4 +25 C +85 C -40 C -6 RETURN LOSS (dB) RETURN LOSS (dB) 1 -8 -10 -12 -10 -15 -20 -14 -16 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 -25 0.7 1.1 0.75 0.8 FREQUENCY (GHz) 34 34 32 32 30 30 28 +25 C +85 C -40 C 24 26 20 20 0.8 0.85 0.9 0.95 FREQUENCY (GHz) 1 1 1.05 1.1 +25 C +85 C -40 C 24 22 0.75 0.95 28 22 18 0.7 0.9 Psat vs. Temperature @ 900 MHz Psat (dBm) P1dB (dBm) P1dB vs. Temperature @ 900 MHz 26 0.85 FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - SMT RESPONSE (dB) 10 18 0.7 0.75 0.8 0.85 0.9 0.95 1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 139 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 900 MHz 10 48 9 46 8 NOISE FIGURE (dB) 50 42 40 +25 C +85 C 38 -40 C 36 7 6 5 4 +25 C 3 +85 C 34 2 -40 C 32 1 30 0.75 0.8 0.85 0.9 0.95 0 0.7 1 0.75 0.8 FREQUENCY (GHz) +25 C +85 C -40 C -20 -25 -30 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) ISOLATION (dB) -5 -15 0.9 0.95 1 1.1 50 45 40 35 30 25 Gain P1dB Psat OIP3 20 15 10 4.5 4.75 5 5.25 5.5 Vs (Vdc) FREQUENCY (GHz) ACPR vs. Supply Voltage @ 910 MHz CDMA IS95, 9 Channels Forward Gain, Power & IP3 vs. Supply Current @ 900 MHz* 55 -25 50 -30 45 CDMA IS95 Frequency: 910 MHz Integration BW: 1.228 MHz Forward Link, 9 Channels -35 40 35 ACPR (dBc) Gain P1dB Psat OIP3 30 -40 5V -45 4.5V -50 25 -55 20 -60 15 -65 10 250 -70 5.5V Source ACPR 300 350 400 Icq (mA) 450 500 12 14 16 18 20 22 24 Channel Power (dBm) * Icq is controlled by varying VPD. 11 - 140 1.05 Gain, Power & IP3 vs. Supply Voltage @ 900 MHz 0 -10 0.85 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 900 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) LINEAR & POWER AMPLIFIERS - SMT OIP3 (dBm) 44 11 Noise Figure vs. Temperature @ 900 MHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 1900 MHz Gain vs. Temperature @ 1900 MHz 10 S21 S11 0 GAIN (dB) RESPONSE (dB) 5 S22 -5 -10 -15 -20 -25 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.7 +85 C -40 C 1.8 FREQUENCY (GHz) +25 C +85 C -40 C -10 -5 RETURN LOSS (dB) RETURN LOSS (dB) 2.1 2 2.1 0 -5 -15 -20 -25 -30 +25 C +85 C -40 C -10 -15 -20 -25 -35 1.8 1.9 2 -30 1.7 2.1 1.8 FREQUENCY (GHz) Psat vs. Temperature @ 1900 MHz 34 33 33 32 32 31 31 Psat (dBm) 34 30 29 28 +25 C +85 C -40 C 27 26 1.9 FREQUENCY (GHz) P1dB vs. Temperature @ 1900 MHz P1dB (dBm) 2 Output Return Loss vs. Temperature @ 1900 MHz 0 30 29 28 +25 C +85 C -40 C 27 26 25 24 1.7 1.9 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 1900 MHz -40 1.7 11 +25 C LINEAR & POWER AMPLIFIERS - SMT 15 25 1.8 1.9 FREQUENCY (GHz) 2 2.1 24 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 141 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 1900 MHz 10 50 9 48 8 NOISE FIGURE (dB) 52 OIP3 (dBm) 46 11 Noise Figure vs. Temperature @ 1900 MHz 44 42 40 38 +25 C 36 +85 C 34 -40 C 5 4 3 +25 C +85 C 2 -40 C 1.8 1.9 2 0 1.7 2.1 1.8 FREQUENCY (GHz) ISOLATION (dB) -15 1.8 1.9 2 2.1 GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) +25 C +85 C -40 C -10 -20 1.7 50 45 40 35 30 25 Gain P1dB Psat OIP3 20 15 10 5 4.5 4.75 5 5.25 ACPR vs. Supply Voltage @ 1960 MHz CDMA 2000, 9 Channels Forward -25 45 -30 40 -35 35 -40 ACPR (dBc) 50 30 25 CDMA2000 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels -45 4.5V -50 5V 5.5V -55 Gain P1dB Psat OIP3 -60 -65 10 Source ACPR 5 250 -70 300 350 400 Icq (mA) 450 500 14 16 18 20 22 24 Channel Power (dBm) * Icq is controlled by varying VPD. 11 - 142 5.5 Vs (Vdc) Gain, Power & IP3 vs. Supply Current @ 1900 MHz* 15 2.1 55 FREQUENCY (GHz) 20 2 Gain, Power & IP3 vs. Supply Voltage @ 1900 MHz 0 -5 1.9 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 1900 MHz GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) LINEAR & POWER AMPLIFIERS - SMT 6 1 32 30 1.7 7 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 2100 MHz Gain vs. Temperature @ 2100 MHz 10 S21 S11 0 GAIN (dB) RESPONSE (dB) 5 S22 -5 -10 -15 -20 -25 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.9 +85C -40C 2 FREQUENCY (GHz) 2.2 2.3 -5 -4 +25C +85C -40C -6 RETURN LOSS (dB) RETURN LOSS (dB) 2.3 0 -2 -8 -10 -12 +25C +85C -40C -10 -15 -20 -25 -14 2 2.1 2.2 -30 1.9 2.3 2 FREQUENCY (GHz) Psat vs. Temperature @ 2100 MHz 34 33 33 32 32 31 31 Psat (dBm) 34 30 29 +25C 28 +85C -40C 27 30 29 26 25 FREQUENCY (GHz) +85C -40C 27 25 2.1 +25C 28 26 2 2.1 FREQUENCY (GHz) P1dB vs. Temperature @ 2100 MHz P1dB (dBm) 2.2 Output Return Loss vs. Temperature @ 2100 MHz 0 24 1.9 2.1 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 2100 MHz -16 1.9 11 +25C 2.2 2.3 LINEAR & POWER AMPLIFIERS - SMT 15 24 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 143 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 2100 MHz Noise Figure vs. Temperature @ 2100 MHz 54 10 52 9 50 8 NOISE FIGURE (dB) 46 44 42 40 +25C 38 +85C 36 -40C 6 5 +25C +85C 4 -40C 3 1 32 30 1.9 2 2.1 2.2 0 1.9 2.3 2 FREQUENCY (GHz) 0 +25C +85C -40C ISOLATION (dB) -10 -15 -20 1.9 2 2.1 2.2 2.3 Gain, Power & IP3 vs. Supply Voltage @ 2100 MHz 2.2 2.3 GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) Reverse Isolation vs. Temperature @ 2100 MHz -5 2.1 FREQUENCY (GHz) 55 50 45 40 35 30 25 Gain P1dB 20 Psat OIP3 15 10 5 4.5 4.75 5 5.25 5.5 Vs (Vdc) FREQUENCY (GHz) ACPR vs. Supply Voltage @ 2140 MHz W-CDMA, 64 DPCH Power Compression @ 2100 MHz 55 50 45 Pout Gain 40 PAE -20 4.5V -25 W-CDMA Frequency: 2.14 GHz Integration BW: 3.84 MHz 64 DPCH -30 35 ACPR (dBc) 30 25 20 15 -35 5V -40 5.5V -45 -50 10 -55 5 -60 0 10 12 14 16 18 20 22 INPUT POWER (dBm) 11 - 144 7 2 34 Pout (dBm), Gain (dB), PAE (%) LINEAR & POWER AMPLIFIERS - SMT 11 OIP3 (dBm) 48 24 26 28 Source ACPR -65 12 14 16 18 20 22 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Power Dissipation Absolute Maximum Ratings POWER DISSIPATION (W) Max Pdiss @ +85C 2.5 1900 MHz 2 1.5 900 MHz 1 -5 0 5 10 15 20 Collector Bias Voltage (Vcc) +6.0 Vdc Control Voltage (Vpd) +5.3 Vdc RF Input Power (RFIN)(Vs = Vpd = +5Vdc) +31 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 41.5 mW/°C above 85 °C) 2.7 W Thermal Resistance (junction to ground paddle) 24.1 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A INPUT POWER (dBm) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 11 LINEAR & POWER AMPLIFIERS - SMT 3 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC452QS16G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC452QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H452 XXXX [2] H452 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 145 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Pin Descriptions LINEAR & POWER AMPLIFIERS - SMT 11 Pin Number Function Description Interface Schematic 1, 2, 4, 5, 7-10, 13-16 GND These pins & package bottom must be connected to RF/DC ground. 3 VPD Power control pin. For maximum power, this pin should be connected to 5V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 6 RFIN This pin is DC coupled. Off chip matching components are required. See Application Circuit herein. 11, 12 RFOUT RF output and DC Bias input for the output amplifier stage. Off chip matching components are required. See Application Circuit herein. 400 MHz Application Circuit This circuit was used to specify the performance for 400-410 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Recommended Component Values Note: C3 should be placed as close to pins as possible. 12 pF 100 pF C4, C5 6.8 pF C6 39 pF C8, C9 2.2 μF TL1 TL2 TL3 TL4 TL5 L1 47 nH 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm L2 40 nH Physical Length 0.11” 0.06” 0.12” 0.04” 0.16” L3 4.7 nH Electrical Length 3° 2° 3° 1° 4° L4 5.6 nH R1 5.1 Ohms Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 11 - 146 C1, C2 C3, C7 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 400 MHz Evaluation PCB List of Materials for Evaluation PCB 110380-400 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1, C2 12 pF Capacitor, 0402 Pkg. C3, C7 100 pF Capacitor, 0402 Pkg. C4, C5 6.8 pF Capacitor, 0402 Pkg. C6 39 pF Capacitor, 0402 Pkg. C8, C9 2.2 μF Capacitor, Tantalum L1 47 nH Inductor, 0603 Pkg. L2 40 nH Inductor, 0402 Pkg. L3 4.7 nH Inductor, 0402 Pkg. L4 5.6 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. U1 HMC452QS16G / HMC452QS16GE Linear Amp PCB [2] 110378 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 11 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 147 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 470 MHz Application Circuit This circuit was used to specify the performance for 450-496 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. LINEAR & POWER AMPLIFIERS - SMT 11 11 - 148 Note: C3 should be placed as close to pins as possible. TL1 TL2 TL3 TL4 TL5 Recommended Component Values 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm C1, C2 12 pF Physical Length 0.11” 0.06” 0.12” 0.04” 0.16” C3, C7 100 pF Electrical Length 3° 2° 3° 1° 4° C4 6.8 pF C5 5.6 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 C6 39 pF C8, C9 2.2 μF L1 47 nH L2 40 nH L3 3.9 nH L4 4.3 nH R1 5.1 Ohms For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 470 MHz Evaluation PCB List of Materials for Evaluation PCB 110381-470 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1, C2 12 pF Capacitor, 0402 Pkg. C3, C7 100 pF Capacitor, 0402 Pkg. C4 6.8 pF Capacitor, 0402 Pkg. C5 5.6 pF Capacitor, 0402 Pkg. C6 39 pF Capacitor, 0402 Pkg. C8, C9 2.2 μF Capacitor, Tantalum L1 47 nH Inductor, 0603 Pkg. L2 40 nH Inductor, 0402 Pkg. L3 3.9 nH Inductor, 0402 Pkg. L4 4.3 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. U1 HMC452QS16G / HMC452QS16GE Linear Amp PCB [2] 110378 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 11 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 149 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 900 MHz Application Circuit This circuit was used to specify the performance for 810-960 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. LINEAR & POWER AMPLIFIERS - SMT 11 11 - 150 Note: C3 should be placed as close to pins as possible. TL1 TL2 TL3 50 Ohm 50 Ohm 50 Ohm C1 Physical Length 0.21” 0.19” 0.23” C2, C6 5.6 pF Electrical Length 11° 10° 12° C3, C7 100 pF C4 2.2 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 Recommended Component Values 10 pF C5 5 pF C8, C9 2.2 μF L1, L2 20 nH R1 5.6 Ohm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 900 MHz Evaluation PCB List of Materials for Evaluation PCB 108715-900 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 10 pF Capacitor, 0402 Pkg. C2, C6 5.6 pF Capacitor, 0402 Pkg. C3, C7 100 pF Capacitor, 0402 Pkg. C4 2.2 pF Capacitor, 0402 Pkg. C5 5 pF Capacitor, 0402 Pkg. C8, C9 2.2 μF Capacitor, Tantalum L1, L2 20 nH Inductor, 0402 Pkg. R1 5.6 Ohm Resistor, 0402 Pkg. U1 HMC452QS16G / HMC452QS16GE Linear Amp PCB [2] 108713 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 11 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 151 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 1900 MHz Application Circuit This circuit was used to specify the performance for 1710-1990 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. LINEAR & POWER AMPLIFIERS - SMT 11 11 - 152 Note: C2, C3 and C4 should be placed as close to pins as possible. Impedance Physical Length Electrical Length Recommended Component Values TL1 TL2 50 Ohm 50 Ohm C1 0.08” C2 2 pF 9° C3, C5, C6 100 pF 0.04” 4° PCB Material: 10 mil Rogers 4350, Er = 3.48 2.7 pF C4 3.3 pF C7, C8 2.2 μF L1, L2 20 nH R1 5.6 Ohms For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 1900 MHz Evaluation PCB List of Materials for Evaluation PCB 108703-1900 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 2.7 pF Capacitor, 0402 Pkg. C2 2 pF Capacitor, 0402 Pkg. C3, C5, C6 100 pF Capacitor, 0402 Pkg. C4 3.3 pF Capacitor, 0402 Pkg. C7, C8 2.2 μF Capacitor, Tantalum L1, L2 20 nH Inductor, 0402 Pkg. R1 5.6 Ohm Resistor, 0402 Pkg. U1 HMC452QS16G / HMC452QS16GE Linear Amp PCB [2] 108701 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 11 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 153 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 2100 MHz Application Circuit This circuit was used to specify the performance for 2010-2170 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. LINEAR & POWER AMPLIFIERS - SMT 11 11 - 154 Note: C2, C3 and C4 should be placed as close to pins as possible. TL1 TL2 Recommended Component Values 50 Ohm 50 Ohm C1 Physical Length 0.04” 0.08” C2 2 pF Electrical Length 5° 10° C3, C6 100 pF C4 3.3 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 4.7 pF C5 15 pF C7, C8 2.2 μF L1 12 nH L2 10 nH R1 5.1 Ohms For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 2100 MHz Evaluation PCB List of Materials for Evaluation PCB 111041-2100 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 4.7 pF Capacitor, 0402 Pkg. C2 2 pF Capacitor, 0402 Pkg. C3, C6 100 pF Capacitor, 0402 Pkg. C4 3.3 pF Capacitor, 0402 Pkg. C5 15 pF Capacitor, 0402 Pkg. C7, C8 2.2 μF Capacitor, Tantalum L1 12 nH Inductor, 0402 Pkg. L2 10 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. U1 HMC452QS16G / HMC452QS16GE Linear Amp PCB [2] 111039 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 11 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 155