HMC452QS16G / 452QS16GE v01.0205 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Typical Applications Features The HMC452QS16G / HMC452QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +48 dBm • GSM, GPRS & EDGE 9 dB Gain @ 2100 MHz • CDMA & W-CDMA 53% PAE @ +31 dBm Pout • CATV/Cable Modem +24 dBm CDMA2000 Channel Power@ -45 dBc ACP • Fixed Wireless & WLL Single +5V Supply 22.5 dB Gain @ 400 MHz Integrated Power Control (VPD) QSOP16G SMT Package: 29.4 mm2 General Description Functional Diagram The HMC452QS16G & HMC452QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +43 dBm at 0.4 GHz or +48 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC452QS16G & HMC452QS16GE ideal power amplifiers for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications. Electrical Specifications, TA = +25°C, Vs= +5V, VPD = +5V [1] Parameter Min. Frequency Range Gain Typ. Max. Min. 400 - 410 20 Gain Variation Over Temperature 22.5 0.012 Typ. Max. Min. 450 - 496 19 0.02 21.5 0.012 Typ. Max. Min. 810 - 960 13 0.02 15.5 0.012 Typ. Max. Min. 1710 - 1990 7.5 0.02 10 0.012 6.5 0.02 Typ. Max. Units 2010 - 2170 MHz 9 dB 0.012 0.02 dB/C Input Return Loss 13 15 9 17 11 dB Output Return Loss 7 8 12 15 20 dB 31 dBm 32.5 dBm 48 dBm Output Power for 1dB Compression (P1dB) 27.5 Saturated Output Power (Psat) Output Third Order Intercept (IP3) [2] Noise Figure 30.5 27.5 31 40 43 30.5 27 31 41 44 30 28 31 45 48 31 28 31.5 45 48 45 7 7 7 7 7.5 dB Supply Current (Icq) 485 485 485 485 485 mA Control Current (IPD) 10 10 10 10 10 mA [1] Specifications and data reflect HMC452QS16G measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. [2] Two-tone input power of -10 dBm per tone, 1 MHz spacing. 5 - 252 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 25 20 10 S21 GAIN (dB) RESPONSE (dB) 15 S11 5 S22 0 -5 -10 -15 0.1 0.2 0.3 0.4 0.5 0.6 0.7 25 24 23 22 21 20 19 18 17 16 15 14 13 12 0.35 +25 C +85 C -40 C 0.37 0.39 0.41 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ 400 MHz Output Return Loss vs. Temperature @ 400 MHz +25 C +85 C -40 C -6 RETURN LOSS (dB) RETURN LOSS (dB) -4 -8 -10 -12 0.43 0.45 -4 -6 -8 -10 -12 +25 C +85 C -40 C -14 -14 0.37 0.39 0.41 0.43 -16 0.35 0.45 0.37 P1dB vs. Temperature @ 400 MHz 33 32 32 31 31 Psat (dBm) 34 33 30 +25 C +85 C -40 C 28 27 30 29 27 26 25 25 0.39 0.41 FREQUENCY (GHz) +25 C +85 C -40 C 28 26 0.37 0.41 Psat vs. Temperature @ 400 MHz 34 29 0.39 FREQUENCY (GHz) FREQUENCY (GHz) P1dB (dBm) 0.45 -2 -2 24 0.35 0.43 0 0 -16 0.35 5 Gain vs. Temperature @ 400 MHz AMPLIFIERS - SMT Broadband Gain & Return Loss @ 400 MHz 0.43 0.45 24 0.35 0.37 0.39 0.41 0.43 0.45 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 253 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 400 MHz Noise Figure vs. Temperature @ 400 MHz 10 48 9 46 8 NOISE FIGURE (dB) 50 44 OIP3 (dBm) 42 40 38 +25 C 36 +85 C 34 -40 C 7 6 5 +25 C 4 +85 C 3 -40 C 2 32 1 30 0.35 0.37 0.39 0.41 0.43 0 0.35 0.45 0.37 0.39 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 400 MHz ISOLATION (dB) -5 +25 C +85 C -40 C -15 -20 -25 -30 -35 0.35 0.37 0.39 0.41 0.43 0.45 45 40 35 30 25 20 Gain P1dB 15 10 4.5 4.75 5 5.25 5.5 ACPR vs. Supply Voltage @ 400 MHz W-CDMA , 64 DPCH -10 55 50 -15 Pout Gain PAE 45 40 -20 W-CDMA Frequency: 400 MHz Integration BW: 3.84 MHz 64 DPCH -25 35 ACPR (dBc) Pout (dBm), Gain (dB), PAE (%) Psat OIP3 Vs (Vdc) Power Compression @ 400 MHz 30 25 20 -30 -35 4.5V 5V -40 5.5V -45 -50 15 -55 10 -60 5 -65 Source ACPR -70 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) 5 - 254 0.45 50 FREQUENCY (GHz) 0 -10 0.43 Gain, Power & IP3 vs. Supply Voltage @ 400 MHz 0 -10 0.41 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 5 8 10 12 14 8 10 12 14 16 18 20 22 24 Channel Power (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain & Return Loss @ 470 MHz 23 20 22 21 20 10 S21 GAIN (dB) RESPONSE (dB) 15 S11 5 S22 0 -5 19 18 +25 C 17 +85 C 16 -40 C 15 14 -10 13 0.2 0.3 0.4 0.5 0.6 12 0.43 0.7 0.45 0.47 0.49 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ 470 MHz Output Return Loss vs. Temperature @ 470 MHz 0 0 -2 -2 0.51 0.53 0.51 0.53 AMPLIFIERS - SMT 24 25 -15 0.1 5 Gain vs. Temperature @ 470 MHz -6 RETURN LOSS (dB) RETURN LOSS (dB) -4 +25 C +85 C -40 C -8 -10 -12 -14 -4 -6 -8 -10 -12 +25 C +85 C -40 C -16 -14 -18 -20 0.43 0.45 0.47 0.49 0.51 -16 0.43 0.53 0.45 FREQUENCY (GHz) 34 34 33 33 32 32 31 31 30 29 +25 C +85 C -40 C 27 26 30 29 +25 C +85 C -40 C 28 27 26 25 24 0.43 0.49 Psat vs. Temperature @ 470 MHz Psat (dBm) P1dB (dBm) P1dB vs. Temperature @ 470 MHz 28 0.47 FREQUENCY (GHz) 25 0.45 0.47 0.49 FREQUENCY (GHz) 0.51 0.53 24 0.43 0.45 0.47 0.49 0.51 0.53 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 255 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 470 MHz Noise Figure vs. Temperature @ 470 MHz 10 48 9 46 8 NOISE FIGURE (dB) 50 44 OIP3 (dBm) 42 40 +25 C 38 +85 C 36 -40 C 7 6 5 +85 C 3 -40 C 2 32 1 30 0.43 0.45 0.47 0.49 0.51 +25 C 4 34 0 0.43 0.53 0.45 0.47 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 470 MHz -5 ISOLATION (dB) -10 +25 C +85 C -40 C -20 -25 -30 -35 -40 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 45 40 35 30 25 20 Gain P1dB 15 10 4.5 4.75 5 5.25 5.5 ACPR vs. Supply Voltage @ 470 MHz W-CDMA, 64 DPCH -10 55 50 -15 Pout Gain PAE 45 40 -20 W-CDMA Frequency: 470 MHz Integration BW: 3.84 MHz 64 DPCH -25 35 ACPR (dBc) Pout (dBm), Gain (dB), PAE (%) Psat OIP3 Vs (Vdc) Power Compression @ 470 MHz 30 25 20 -30 -35 -40 4.5V -45 5V 5.5V -50 15 -55 10 -60 5 -65 Source ACPR -70 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) 5 - 256 0.53 50 FREQUENCY (GHz) 0 -10 0.51 Gain, Power & IP3 vs. Supply Voltage @ 470 MHz 0 -15 0.49 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 5 8 10 12 14 8 10 12 14 16 18 20 22 24 Channel Power (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 Gain vs. Temperature @ 900 MHz 20 18 15 17 16 15 5 S21 GAIN (dB) RESPONSE (dB) 10 S11 0 S22 -5 14 13 +25 C 12 +85 C 11 -40 C -10 10 -15 -20 0.4 9 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 8 0.7 1.4 0.75 0.8 0.85 0.9 0.95 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature @ 900 MHz Output Return Loss vs. Temperature @ 900 MHz 1.05 1.1 1.05 1.1 1.05 1.1 0 0 -2 +25 C +85 C -40 C -5 -4 +25 C +85 C -40 C -6 RETURN LOSS (dB) RETURN LOSS (dB) 1 AMPLIFIERS - SMT Broadband Gain & Return Loss @ 900 MHz -8 -10 -12 -10 -15 -20 -14 -16 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 -25 0.7 1.1 0.75 0.8 FREQUENCY (GHz) 34 34 32 32 30 30 28 +25 C +85 C -40 C 24 26 20 20 0.8 0.85 0.9 0.95 FREQUENCY (GHz) 1 1 1.05 1.1 +25 C +85 C -40 C 24 22 0.75 0.95 28 22 18 0.7 0.9 Psat vs. Temperature @ 900 MHz Psat (dBm) P1dB (dBm) P1dB vs. Temperature @ 900 MHz 26 0.85 FREQUENCY (GHz) 18 0.7 0.75 0.8 0.85 0.9 0.95 1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 257 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 900 MHz Noise Figure vs. Temperature @ 900 MHz 10 48 9 46 8 NOISE FIGURE (dB) 50 44 OIP3 (dBm) 42 40 +25 C 38 +85 C 36 -40 C 7 6 5 4 +25 C 3 +85 C 34 2 -40 C 32 1 30 0.75 0.8 0.85 0.9 0.95 0 0.7 1 0.75 0.8 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 900 MHz ISOLATION (dB) -5 +25 C +85 C -40 C -15 -20 -25 -30 0.7 0.75 0.8 0.85 0.9 0.95 0.95 1 1 1.05 1.1 1.1 45 40 35 30 25 Gain P1dB Psat OIP3 20 15 10 4.5 4.75 5 5.25 5.5 Vs (Vdc) ACPR vs. Supply Voltage @ 910 MHz CDMA IS95, 9 Channels Forward Gain, Power & IP3 vs. Supply Current @ 900 MHz* 55 -25 50 -30 45 CDMA IS95 Frequency: 910 MHz Integration BW: 1.228 MHz Forward Link, 9 Channels -35 40 35 ACPR (dBc) Gain P1dB Psat OIP3 30 -40 5V -45 4.5V -50 25 -55 20 -60 15 -65 10 250 -70 5.5V Source ACPR 300 350 400 Icq (mA) 450 500 12 14 16 18 20 22 24 Channel Power (dBm) * Icq is controlled by varying VPD. 5 - 258 1.05 50 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 0.9 Gain, Power & IP3 vs. Supply Voltage @ 900 MHz 0 -10 0.85 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 5 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 15 10 S21 S11 0 GAIN (dB) RESPONSE (dB) 5 S22 -5 -10 -15 -20 -25 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.7 +25 C +85 C -40 C 1.8 FREQUENCY (GHz) +25 C +85 C -40 C -10 -5 RETURN LOSS (dB) RETURN LOSS (dB) 2.1 2 2.1 0 -5 -15 -20 -25 -30 +25 C +85 C -40 C -10 -15 -20 -25 -35 1.8 1.9 2 -30 1.7 2.1 1.8 FREQUENCY (GHz) Psat vs. Temperature @ 1900 MHz 34 33 33 32 32 31 31 Psat (dBm) 34 30 29 28 +25 C +85 C -40 C 27 26 1.9 FREQUENCY (GHz) P1dB vs. Temperature @ 1900 MHz P1dB (dBm) 2 Output Return Loss vs. Temperature @ 1900 MHz 0 30 29 28 +25 C +85 C -40 C 27 26 25 24 1.7 1.9 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 1900 MHz -40 1.7 5 Gain vs. Temperature @ 1900 MHz AMPLIFIERS - SMT Broadband Gain & Return Loss @ 1900 MHz 25 1.8 1.9 FREQUENCY (GHz) 2 2.1 24 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 259 HMC452QS16G / 452QS16GE v01.0205 Output IP3 vs. Temperature @ 1900 MHz Noise Figure vs. Temperature @ 1900 MHz 10 50 9 48 8 NOISE FIGURE (dB) 52 46 OIP3 (dBm) 44 42 40 38 +25 C 36 +85 C 34 -40 C 32 30 1.7 7 6 5 4 +25 C 3 +85 C 2 -40 C 1 1.8 1.9 2 0 1.7 2.1 1.8 FREQUENCY (GHz) 0 +25 C +85 C -40 C ISOLATION (dB) -10 -15 -20 1.7 1.8 1.9 2 2.1 50 45 40 35 30 25 Gain P1dB Psat OIP3 20 15 10 5 4.5 4.75 5.25 50 -25 45 -30 40 -35 35 -40 30 25 CDMA2000 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels -45 4.5V -50 5V 5.5V -55 Gain P1dB Psat OIP3 -60 -65 10 Source ACPR 5 250 -70 300 350 400 Icq (mA) 450 500 14 16 18 20 22 24 Channel Power (dBm) * Icq is controlled by varying VPD. 5 - 260 5.5 ACPR vs. Supply Voltage @ 1960 MHz CDMA 2000, 9 Channels Forward ACPR (dBc) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 5 Vs (Vdc) Gain, Power & IP3 vs. Supply Current @ 1900 MHz* 15 2.1 55 FREQUENCY (GHz) 20 2 Gain, Power & IP3 vs. Supply Voltage @ 1900 MHz Reverse Isolation vs. Temperature @ 1900 MHz -5 1.9 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 15 10 S21 S11 0 GAIN (dB) RESPONSE (dB) 5 S22 -5 -10 -15 -20 -25 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1.9 +25C +85C -40C 2 FREQUENCY (GHz) 2.2 2.3 -5 -4 +25C +85C -40C -6 RETURN LOSS (dB) RETURN LOSS (dB) 2.3 0 -2 -8 -10 -12 +25C +85C -40C -10 -15 -20 -25 -14 2 2.1 2.2 -30 1.9 2.3 2 FREQUENCY (GHz) Psat vs. Temperature @ 2100 MHz 34 33 33 32 32 31 31 Psat (dBm) 34 30 29 +25C +85C -40C 28 27 30 29 27 26 25 25 2.1 FREQUENCY (GHz) +25C +85C -40C 28 26 2 2.1 FREQUENCY (GHz) P1dB vs. Temperature @ 2100 MHz P1dB (dBm) 2.2 Output Return Loss vs. Temperature @ 2100 MHz 0 24 1.9 2.1 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 2100 MHz -16 1.9 5 Gain vs. Temperature @ 2100 MHz AMPLIFIERS - SMT Broadband Gain & Return Loss @ 2100 MHz 2.2 2.3 24 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 261 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Output IP3 vs. Temperature @ 2100 MHz Noise Figure vs. Temperature @ 2100 MHz 54 10 52 9 50 8 NOISE FIGURE (dB) 48 OIP3 (dBm) 46 44 42 40 +25C 38 +85C 36 -40C 7 6 5 +25C 4 +85C 3 -40C 2 34 1 32 30 1.9 2 2.1 2.2 0 1.9 2.3 2 FREQUENCY (GHz) Reverse Isolation vs. Temperature @ 2100 MHz +25C +85C -40C ISOLATION (dB) -10 -15 -20 1.9 2 2.1 2.2 2.3 Gain, Power & IP3 vs. Supply Voltage @ 2100 MHz 0 -5 2.1 FREQUENCY (GHz) 2.2 2.3 GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 5 55 50 45 40 35 30 25 Gain P1dB 20 Psat OIP3 15 10 5 4.5 4.75 5 5.25 5.5 Vs (Vdc) FREQUENCY (GHz) ACPR vs. Supply Voltage @ 2140 MHz W-CDMA, 64 DPCH Power Compression @ 2100 MHz 50 -20 Pout Gain PAE 45 40 W-CDMA Frequency: 2.14 GHz Integration BW: 3.84 MHz 64 DPCH -30 35 30 25 20 15 -35 5V -40 5.5V -45 -50 10 -55 5 -60 0 10 12 14 16 18 20 22 INPUT POWER (dBm) 5 - 262 4.5V -25 ACPR (dBc) Pout (dBm), Gain (dB), PAE (%) 55 24 26 28 Source ACPR -65 12 14 16 18 20 22 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 3 Max Pdiss @ +85C POWER DISSIPATION (W) 5 Absolute Maximum Ratings 2.5 Collector Bias Voltage (Vcc) +6.0 Vdc Control Voltage (Vpd) +5.3 Vdc RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) +31 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 41.5 mW/°C above 85 °C) 2.7 W Thermal Resistance (junction to ground paddle) 24.1 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A 1900 MHz 2 1.5 900 MHz 1 -5 0 5 10 15 20 INPUT POWER (dBm) AMPLIFIERS - SMT Power Dissipation ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC452QS16G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC452QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H452 XXXX [2] H452 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 263 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz AMPLIFIERS - SMT 5 Pin Descriptions Pin Number Function Description Interface Schematic 1, 2, 4, 5, 7-10, 13-16 GND These pins & package bottom must be connected to RF/DC ground. 3 VPD Power control pin. For maximum power, this pin should be connected to 5.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 6 RFIN This pin is DC coupled. Off chip matching components are required. See Application Circuit herein. 11, 12 RFOUT RF output and DC Bias input for the output amplifier stage. Off chip matching components are required. See Application Circuit herein. 400 MHz Application Circuit This circuit was used to specify the performance for 400-410 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Recommended Component Values Note: C3 should be placed as close to pins as possible. 12 pF 100 pF C4, C5 6.8 pF C6 39 pF C8, C9 2.2 μF TL1 TL2 TL3 TL4 TL5 L1 47 nH 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm L2 40 nH Physical Length 0.11” 0.06” 0.12” 0.04” 0.16” L3 4.7 nH Electrical Length 3° 2° 3° 1° 4° L4 5.6 nH R1 5.1 Ohms Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 264 C1, C2 C3, C7 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT 400 MHz Evaluation PCB List of Materials for Evaluation PCB 110380-400 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1, C2 12 pF Capacitor, 0402 Pkg. C3, C7 100 pF Capacitor, 0402 Pkg. C4, C5 6.8 pF Capacitor, 0402 Pkg. C6 39 pF Capacitor, 0402 Pkg. C8, C9 2.2 μF Capacitor, Tantalum L1 47 nH Inductor, 0603 Pkg. L2 40 nH Inductor, 0402 Pkg. L3 4.7 nH Inductor, 0402 Pkg. L4 5.6 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. U1 HMC452QS16G / HMC452QS16GE Linear Amp PCB [2] 110378 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 265 HMC452QS16G / 452QS16GE v01.0205 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 470 MHz Application Circuit This circuit was used to specify the performance for 450-496 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note: C3 should be placed as close to pins as possible. TL1 TL2 TL3 TL4 TL5 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm C1, C2 12 pF Physical Length 0.11” 0.06” 0.12” 0.04” 0.16” C3, C7 100 pF Electrical Length 3° 2° 3° 1° 4° C4 6.8 pF C5 5.6 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 266 Recommended Component Values C6 39 pF C8, C9 2.2 μF L1 47 nH L2 40 nH L3 3.9 nH L4 4.3 nH R1 5.1 Ohms For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT 470 MHz Evaluation PCB List of Materials for Evaluation PCB 110381-470 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1, C2 12 pF Capacitor, 0402 Pkg. C3, C7 100 pF Capacitor, 0402 Pkg. C4 6.8 pF Capacitor, 0402 Pkg. C5 5.6 pF Capacitor, 0402 Pkg. C6 39 pF Capacitor, 0402 Pkg. C8, C9 2.2 μF Capacitor, Tantalum L1 47 nH Inductor, 0603 Pkg. L2 40 nH Inductor, 0402 Pkg. L3 3.9 nH Inductor, 0402 Pkg. L4 4.3 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. U1 HMC452QS16G / HMC452QS16GE Linear Amp PCB [2] 110378 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 267 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz AMPLIFIERS - SMT 5 900 MHz Application Circuit This circuit was used to specify the performance for 810-960 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note: C3 should be placed as close to pins as possible. TL1 TL2 TL3 50 Ohm 50 Ohm 50 Ohm C1 Physical Length 0.21” 0.19” 0.23” C2, C6 5.6 pF Electrical Length 11° 10° 12° C3, C7 100 pF C4 2.2 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 268 Recommended Component Values 10 pF C5 5 pF C8, C9 2.2 μF L1, L2 20 nH R1 5.6 Ohm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT 900 MHz Evaluation PCB List of Materials for Evaluation PCB 108715-900 Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 10 pF Capacitor, 0402 Pkg. C2, C6 5.6 pF Capacitor, 0402 Pkg. C3, C7 100 pF Capacitor, 0402 Pkg. C4 2.2 pF Capacitor, 0402 Pkg. C5 5 pF Capacitor, 0402 Pkg. C8, C9 2.2 μF Capacitor, Tantalum L1, L2 20 nH Inductor, 0402 Pkg. R1 5.6 Ohm Resistor, 0402 Pkg. U1 HMC452QS16G / HMC452QS16GE Linear Amp PCB [2] 108713 Evaluation PCB, 10 mils [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 269 HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz AMPLIFIERS - SMT 5 1900 MHz Application Circuit This circuit was used to specify the performance for 1710-1990 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note: C2, C3 and C4 should be placed as close to pins as possible. Impedance Physical Length Electrical Length TL2 50 Ohm 50 Ohm C1 0.08” C2 2 pF 9° C3, C5, C6 100 pF 0.04” 4° PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 270 Recommended Component Values TL1 2.7 pF C4 3.3 pF C7, C8 2.2 μF L1, L2 20 nH R1 5.6 Ohms For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT 1900 MHz Evaluation PCB List of Materials for Evaluation PCB 108703-1900 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 2.7 pF Capacitor, 0402 Pkg. C2 2 pF Capacitor, 0402 Pkg. C3, C5, C6 100 pF Capacitor, 0402 Pkg. C4 3.3 pF Capacitor, 0402 Pkg. C7, C8 2.2 μF Capacitor, Tantalum L1, L2 20 nH Inductor, 0402 Pkg. R1 5.6 Ohm Resistor, 0402 Pkg. U1 HMC452QS16G / HMC452QS16GE Linear Amp PCB [2] 108701 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 271 HMC452QS16G / 452QS16GE v01.0205 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 2100 MHz Application Circuit This circuit was used to specify the performance for 2010-2170 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note: C2, C3 and C4 should be placed as close to pins as possible. TL1 TL2 50 Ohm 50 Ohm C1 Physical Length 0.04” 0.08” C2 2 pF Electrical Length 5° 10° C3, C6 100 pF C4 3.3 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 5 - 272 Recommended Component Values 4.7 pF C5 15 pF C7, C8 2.2 μF L1 12 nH L2 10 nH R1 5.1 Ohms For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz 5 AMPLIFIERS - SMT 2100 MHz Evaluation PCB List of Materials for Evaluation PCB 111041-2100 Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 4.7 pF Capacitor, 0402 Pkg. C2 2 pF Capacitor, 0402 Pkg. C3, C6 100 pF Capacitor, 0402 Pkg. C4 3.3 pF Capacitor, 0402 Pkg. C5 15 pF Capacitor, 0402 Pkg. C7, C8 2.2 μF Capacitor, Tantalum L1 12 nH Inductor, 0402 Pkg. L2 10 nH Inductor, 0402 Pkg. R1 5.1 Ohm Resistor, 0402 Pkg. U1 HMC452QS16G / HMC452QS16GE Linear Amp PCB [2] 111039 Evaluation PCB, 10 mils [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 273