HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Features Typical Applications The HMC457QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout • GSM, GPRS & Edge +25 dBm W-CDMA Channel Power @ -50 dBc ACPR Gain: 27 dB @ 1900 MHz • Base Stations & Repeaters Integrated Power Control (Vpd) QSOP16G SMT Package: 29.4 mm2 Functional Diagram General Description The HMC457QS16G is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE makes the HMC457QS16G an ideal power amplifier for Cellular/3G base station & repeater applications. Electrical Specifications, TA = +25°C, Vs= +5V, Vpd = +5V, Vbias = +5V (note 1) Parameter Min. Frequency Range Gain Typ. Max. Min. 1710 - 1990 24 Gain Variation Over Temperature 27 0.025 22 0.035 Typ. Max. Units 2010 - 2170 MHz 25 dB 0.025 0.035 dB / °C Input Return Loss 11 11 dB Output Return Loss 8 5 dB 30.5 dBm 32 dBm 45 dBm 6 5 dB Supply Current (Icq) 500 500 mA Control Current (Ipd) 4 4 mA Bias Current (Vbias) 10 10 mA Output Power for 1dB Compression (P1dB) 26 Saturated Output Power (Psat) Output Third Order Intercept (IP3) (note 2) Noise Figure 29 27.5 32.5 42 45 42 Note 1: Specifications and data reflect HMC457QS16G measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. Note 2: Two-tone output power of +15 dBm per tone, 1 MHz spacing. 8 - 300 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 30 25 28 20 26 15 24 S21 S11 S22 5 0 22 20 18 -5 16 -10 14 -15 12 -20 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 10 1.6 3 +25C +85C -40C 1.65 1.7 1.75 FREQUENCY (GHz) 1.8 1.85 1.9 1.95 2 2.05 2.1 2 2.05 2.1 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 1900 MHz AMPLIFIERS - SMT 30 10 8 Gain vs. Temperature @ 1900 MHz GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss @ 1900 MHz Output Return Loss vs. Temperature @ 1900 MHz 0 0 -2 +25C +85C -40C -6 +25C +85C -3 RETURN LOSS (dB) RETURN LOSS (dB) -4 -8 -10 -12 -14 -40C -6 -9 -12 -16 -18 -20 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 -15 1.6 2.1 1.65 1.7 1.75 FREQUENCY (GHz) 1.85 34 32 32 30 30 28 26 24 1.65 1.7 1.75 1.8 1.95 28 26 +25 C +85 C -40 C 24 +25 C +85 C -40 C 22 1.9 Psat vs. Temperature @ 1900 MHz 34 Psat (dBm) P1dB (dBm) PldB vs. Temperature @ 1900 MHz 20 1.6 1.8 FREQUENCY (GHz) 22 1.85 1.9 1.95 FREQUENCY (GHz) 2 2.05 2.1 20 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 301 HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Output IP3 vs. Temperature @ 1900 MHz Noise Figure vs. Temperature @ 1900 MHz 50 10 48 9 8 NOISE FIGURE (dB) 46 OIP3 (dBm) 44 42 40 38 +25 C +85 C -40 C 36 1.65 1.7 1.75 6 5 4 3 +25 C +85 C -40 C 1 34 1.6 7 2 1.8 1.85 1.9 1.95 2 2.05 0 1.6 2.1 1.7 1.8 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) Gain, Power & IP3 vs. Supply Voltage @ 1900 MHz 45 40 35 30 25 20 Gain P1dB Psat OIP3 15 10 4.75 5 5.25 5.5 45 40 35 30 25 20 Gain P1dB Psat OIP3 15 10 5 440 480 520 560 600 Icq (mA) ACPR vs. Supply Voltage @ 1960 MHz CDMA 2000, 9 Channels Forward Power Compression @ 1900 MHz 50 -30 45 5V Pout (dBm) Gain (dB) PAE (%) 40 -40 4.5V CDMA2000 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels ACPR (dBc) 35 30 25 20 -50 -60 -70 15 5.5V 10 -80 5 0 -10 Source ACPR -8 -6 -4 -2 0 2 4 INPUT POWER (dBm) 6 8 10 12 -90 12 14 16 18 20 22 24 Channel Power (dBm) * Icq is controlled by varying Vpd. 8 - 302 2.1 50 Vs (Vdc) Pout (dBm), GAIN (dB), PAE (%) 2 Gain, Power & IP3 vs. Supply Current @ 1900 MHz* 50 5 4.5 1.9 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 8 Gain vs. Temperature @ 2100 MHz 30 30 25 28 20 GAIN (dB) RESPONSE (dB) 26 15 S11 S21 S22 10 5 0 24 22 20 -5 18 +25C 16 -40C -10 +85C -15 -20 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 14 1.9 3 1.95 2 FREQUENCY (GHz) 2.05 2.1 2.15 2.2 2.25 2.3 FREQUENCY (GHz) Input Return Loss vs. Temperature @ 2100 MHz AMPLIFIERS - SMT Broadband Gain and Return Loss @ 2100 MHz Output Return Loss vs. Temperature @ 2100 MHz 0 0 -2 +25C +85C -40C -6 +25C +85C -40C -2 RETURN LOSS (dB) RETURN LOSS (dB) -4 -8 -10 -12 -14 -4 -6 -8 -16 -18 -20 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 -10 1.9 2.3 1.95 2 FREQUENCY (GHz) 34 32 32 30 30 28 26 +25 C +85 C -40 C 2.15 2.2 2.25 2.3 28 26 +25 C +85 C -40 C 24 22 20 1.9 2.1 Psat vs. Temperature @ 2100 MHz 34 Psat (dBm) P1dB (dBm) PldB vs. Temperature @ 2100 MHz 24 2.05 FREQUENCY (GHz) 22 1.95 2 2.05 2.1 2.15 FREQUENCY (GHz) 2.2 2.25 2.3 20 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 303 HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 8 Noise Figure vs. Temperature @ 2100 MHz Output IP3 vs. Temperature @ 2100 MHz 10 48 9 46 8 NOISE FIGURE (dB) OIP3 (dBm) 44 42 40 38 +25 C +85 C -40 C 36 34 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 7 6 5 4 3 +25 C 2 +85 C 1 -40 C 0 1.9 2.3 2 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) Gain, Power & IP3 vs. Supply Voltage @ 2100 MHz 45 40 35 30 25 20 Gain P1dB Psat OIP3 10 5 4.5 4.75 5 5.25 5.5 45 40 35 30 25 20 Gain P1dB Psat OIP3 15 10 5 440 480 520 560 600 Icq (mA) ACPR vs. Supply Voltage @ 2140 MHz W-CDMA, 64 DPCH Power Compression @ 2100 MHz 50 -30 45 Pout (dBm) Gain (dB) PAE (%) 40 -35 ACPR (dBc) 30 25 20 -45 -60 -65 5 -70 0 -10 -75 -4 -2 0 2 4 6 8 10 12 5V -55 10 -6 5.5V -50 15 -8 W-CDMA Frequency: 2.14 GHz Integration BW: 3.84 MHz 64 DPCH -40 35 INPUT POWER (dBm) 4.5V Source ACPR 12 14 16 18 20 22 24 Channel Power (dBm) *Icq is controlled by varying Vpd 8 - 304 2.3 50 Vs (Vdc) Pout (dBm), GAIN (dB), PAE (%) 2.2 Gain, Power & IP3 vs. Supply Current @ 2100 MHz* 50 15 2.1 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 50 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 28 HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 3 Max Pdiss @ +85C POWER DISSIPATION (W) 2.8 2.6 1900 MHz 2.4 2.2 Collector Bias Voltage (Vcc) +6.0 Vdc Control Voltage (Vpd) +5.4 Vdc RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) +20 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 42.9 mW/°C above 85 °C) 2.78 W Thermal Resistance (junction to ground paddle) 23.3 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 2 2100 MHz 1.8 1.6 1.4 1.2 1 -10 -8 -6 -4 -2 0 2 4 6 8 10 INPUT POWER (dBm) %,%#42/34!4)#3%.3)4)6%$%6)#% /"3%26%(!.$,).'02%#!54)/.3 Typical Supply Current vs. Supply Voltage Vs (V) Icq (mA) 4.5 400 5.0 510 5.5 620 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 AMPLIFIERS - SMT Absolute Maximum Ratings Power Dissipation 8 - 305 HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Outline Drawing AMPLIFIERS - SMT 8 NOTES: 1. PACKAGE BODY MATERIAL: MOLDING COMPOUND MP-180S OR EQUIVALENT. 2. LEAD MATERIAL: Cu w/Ag SPOT PLATING. 3. LEAD PLATING: 80Sn/20Pb 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1. 8 - 306 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Pin Number Function Description 1 Vcc Power supply voltage for the first amplifier stage. External bypass capacitors are required as shown in the application schematic. 2, 4, 5, 7, 9, 16 GND Ground: Backside of package has exposed metal ground slug that must also be connected to RF/DC ground. Vias under the device are required. 3 Vbias Power Supply for Bias Circuit 6 RF IN This pin is AC coupled and matched to 50 Ohms from 1.7 - 2.2 GHz 8 Vpd Power control pin. For maximum power, this pin should be connected to +5.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 10 - 15 RF OUT RF output and DC bias for the output stage. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com AMPLIFIERS - SMT 8 Pin Descriptions 8 - 307 HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 1900 & 2100 MHz Application Circuit This circuit was used to specify the performance for 1900 & 2100 MHz operation. Contact the HMC Applications Group for assistance in optimizing performance for your application. TL1 TL2 50 Ohm 50 Ohm Physical Length 0.55” 0.07” Electrical Length 62° 8° Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 8 - 308 Recommended Component Values 1900 MHz 2100 MHz C1 - C4 100 pF 100 pF C5, C6 1000 pF 1000 pF C7 2.2 µF 2.2 µF C8 33 pF 33 pF C9 3.9 pF 2.7 pF L1, L2 3.9 nH 3.9 nH R1 160 Ohm 160 Ohm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com v00.0904 HMC457QS16G InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 8 AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 106043-1900, 110171-2100* Item Description J1, J2 PC Mount SMA Connector J3, J4 2 mm DC Header C1 - C4 100 pF Capacitor, 0402 Pkg. C5, C6 1000 pF Capacitor, 0603 Pkg. C7 2.2 µF Capacitor, Tantalum C8 33 pF Capacitor, 0402 Pkg. C9 3.9 pF Capacitor, 0603 Pkg. - 1900 MHz C9 2.7 pF Capacitor, 0603 Pkg. - 2100 MHz L1, L2 3.9 nH Inductor, 0603 Pkg. R1 160 Ohm Resistor, 0603 Pkg. U1 HMC457QS16G PCB** 109585 Evaluation PCB, 10 mils The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350, Er = 3.48 * Reference one of these numbers when ordering complete evaluation PCB depending on frequency of operation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 309