Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35010NT1 MRFG35010MT1 BWA RF Power Field Effect Transistor Device Characteristics (From Device Data Sheet) Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 900 mW Power Gain — 10 dB Efficiency — 28% • 9 Watts P1dB @ 3.55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • N Suffix Indicates Lead - Free Terminations Reference Design Characteristics • Typical Single - Channel W - CDMA Performance: - 43 dBc ACPR, 2.45 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 1000 mWatt Power Gain — 10.5 dB Efficiency — 30% VGG VDD BIAS BIAS BWA 2.4 - 2.5 GHz RF INPUT RF OUTPUT MATCH MATCH MRFG35010N(M) BWA 2.4 - 2.5 GHz REFERENCE DESIGN Designed by: Monte Miller and Rick Hooper This reference design is designed to demonstrate the typical RF performance characteristics of the MRFG35010N(M) when applied for the 2.4 - 2.5 GHz W - CDMA frequency band. The reference design is tuned for the best tradeoff between good W - CDMA linearity and good power capability and efficiency. REFERENCE DESIGN LIBRARY TERMS AND CONDITIONS Freescale is pleased to make this reference design available for your use in development and testing of your own product or products, without charge. The reference design contains easy - to - copy, fully functional amplifier designs. Where possible, it consists of “no tune” distributed element matching circuits designed to be as small as possible, includes temperature compensated bias circuit- Freescale Semiconductor, Inc., 2005. All rights reserved. RF Reference Design Data Freescale Semiconductor ry, and is designed to be used as “building blocks” for our customers. HEATSINKING When operating this fixture please provide adequate heatsinking for the device. Excessive heating of the device will prevent repeating of the included measurements. NONLINEAR SIMULATION To aid the design process and help reduce time to market for our customers, Freescale provides device models for several commercially available harmonic balance simulators. Our model Library is available for all major computer platforms supported by these simulators. For details on the RF model library and supported harmonic balance simulators, go to the following url: http://www.freescale.com/rf/models MRFG35010NT1 MRFG35010MT1 BWA 1 VGS VDD C9 C8 C7 C6 C5 C14 C4 C15 C3 C16 C13 C12 C11 C10 R1 Z7 L1 RF INPUT Z1 Z2 Z3 L2 Z4 Z5 Z6 Z8 Z9 RF OUTPUT Z10 Z11 C1 Z12 Z13 C17 C2 Z1, Z13 Z2 Z3 Z4 Z5 Z6, Z8 0.044″ 0.044″ 0.105″ 0.044″ 0.450″ 0.146″ x 0.295″ x 0.730″ x 0.045″ x 0.023″ x 0.312″ x 0.070″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z7 Z9 Z10 Z11 Z12 PCB 0.045″ x 0.100″ Microstrip 0.200″ x 0.040″ Microstrip 0.260″ x 0.020″ Microstrip 0.200″ x 0.632″ Microstrip 0.044″ x 0.418″ Microstrip Rogers 4350, 0.020″, εr = 3.50 Figure 1. MRFG35010N(M) BWA Reference Design Schematic Table 1. MRFG35010N(M) BWA Reference Design Component Designations and Values Part Description Value, P/N or DWG Manufacturer C1 4.7 pF Chip Capacitor 08051J4R7BBT AVX C2 0.8 pF Chip Capacitor 08051J0R8BBT AVX C3, C16 10 pF Chip Capacitors 100A100JP150X ATC C4, C15 100 pF Chip Capacitors 100A101JP150X ATC C5, C14 100 pF Chip Capacitors 100B101JP500X ATC C6, C13 1000 pF Chip Capacitors 100B102JP500X ATC C7, C12 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet C8, C11 39K pF Chip Capacitors 200B393KP500X ATC C9, C10 22 µF Tantalum Capacitors T491X226K035AS Kemet C17 15.0 pF Chip Capacitor 08051J15R0GBT AVX L1 3.9 nH Chip Inductor LL2102- F3N9K TOKO L2 8.2 nH Chip Inductor LL1608- FHN2K TOKO R1 75 W, 1/4 W 1% Chip Resistor D55342M07B75JOR Vishay MRFG35010NT1 MRFG35010MT1 BWA 2 RF Reference Design Data Freescale Semiconductor C8 C7 C12 C11 C9 C10 C6 C13 C5 C14 C4 C15 C3 C16 R1 L2 L1 C1 C2 C17 MRFG35010M Rev 1 2.4 − 2.5 GHz Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRFG35010N(M) BWA Reference Design Component Layout MRFG35010NT1 MRFG35010MT1 BWA RF Reference Design Data Freescale Semiconductor 3 CHARACTERISTICS G T , TRANSDUCER GAIN (dB) 14 GT 13 12 11 10 MRFG35010M @ 2.5 GHz VDS = 12 Vdc, IDQ = 180 mA f = 2.5 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.858é−154.23_ ΓL = 0.852é−172.62_ 0 40 −10 35 20 15 8 10 7 −30 −40 −40 ACPR −50 5 0.1 −20 MRFG35010M @ 2.5 GHz VDS = 12 Vdc, IDQ = 180 mA f = 2.5 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.858é−154.23_, ΓL = 0.852é−172.62_ −30 25 −10 IRL −20 30 9 0 −50 −60 −60 0.1 1 ACPR (dBc) 45 PAE PAE, POWER ADDED EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) 15 1 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 4. W - CDMA ACPR and Input Return Loss versus Output Power Figure 3. Transducer Gain and Power Added Efficiency versus Output Power NOTE: Data in Figures 3 and 4 is generated from load pull, not from the test circuit shown. 12 40 GT 10 8 MRFG35010M @ 2.45 GHz VDS = 12 Vdc, IDQ = 180 mA 8.5 P/A 3GPP W−CDMA 30 PAE 20 6 4 0.01 10 −10 0 0.1 1 −10 IRL −20 −20 −30 −40 −30 MRFG35010M @ 2.45 GHz VDS = 12 Vdc, IDQ = 180 mA f = 2.45 GHz, 8.5 P/A 3GPP W−CDMA ACPR −40 −50 −60 0.01 ACPR (dBc), 50 PAE, POWER ADDED EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) G T , TRANSDUCER GAIN (dB) 14 −50 −60 0.1 1 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 5. Transducer Gain and Power Added Efficiency versus Output Power Figure 6. W - CDMA ACPR and Input Return Loss versus Output Power NOTE: Data in Figures 5 and 6 is generated from the test circuit shown. MRFG35010NT1 MRFG35010MT1 BWA 4 RF Reference Design Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MRFG35010NT1 MRFG35010MT1 BWA 5