SiE806DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Drain Top Case Source RT1 800.8191 m 190.2121 m 1.3990 m RT2 7.3171 290.1261 m 2.0175 RT3 10.5922 35.8761 m 460.5573 m RT4 49.1350 483.7652 m 229.4611 m Thermal Capacitance (Joules/°C) Junction to Ambient Case Drain Top Case Source CT1 10.0497 m 2.8387 m 61.4100 u CT2 588.1963 m 61.2894 m 31.1962 m CT3 47.1217 m 347.3308 m 138.9868 m CT4 1.4789 34.5324 m 2.7856 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73878 Revision: 14-Aug-07 www.vishay.com 1 SiE806DF_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Case Source Junction to Ambient Case Drain Top RF1 8.6804 2.7978 m 213.0666 m RF2 5.8765 244.0316 m 313.3212 m RF3 5.9897 319.3498 m 815.5035 m RF4 47.2176 435.0898 m 1.3629 Thermal Capacitance (Joules/°C) Junction to Ambient Case Drain Top Case Source CF1 25.1275 m 768.4927 u 2.2504 m CF2 145.2098 m 1.8305 m 12.5888 m CF3 17.5646 m 19.3761 m 12.8985 m CF4 1.2744 157.7795 u 60.1342 u Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 73878 Revision: 14-Aug-07 SiE806DF_RC Vishay Siliconix Document Number: 73878 Revision: 14-Aug-07 www.vishay.com 3 SiE806DF_RC Vishay Siliconix www.vishay.com 4 Document Number: 73878 Revision: 14-Aug-07