Si4724CY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Q1 Ambient Q2 Case Foot Q1 Foot Q2 RT1 2.3439 2.4039 N/A 10.8513 10.0385 RT2 26.9817 31.5605 N/A 10.9954 8.6825 RT3 21.0135 15.6551 N/A 3.3186 2.1839 RT4 54.6609 35.3805 N/A 9.8347 3.0952 Thermal Capacitance (Joules/°C) Junction to Ambient Q1 Ambient Q2 Case Foot Q1 Foot Q2 CT1 4.8369 m 16.5783 m N/A 126.3851 m 2.0263 CT2 104.6846 m 175.6141 m N/A 25.5136 m 167.0378 m CT3 14.6919 m 34.7178 m N/A 1.1793 m 1.3426 m CT4 1.2039 1.1923 N/A 10.9613 m 44.5532 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74613 Revision: 08-May-06 www.vishay.com 1 Si4724CY_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Q1 Ambient Q2 Case Foot Q1 Foot Q2 RF1 12.9349 14.7665 N/A 4.3132 2.1771 RF2 29.2964 27.4412 N/A 15.2936 4.3684 RF3 29.0996 24.7704 N/A 9.5539 8.8139 RF4 33.6691 18.0219 N/A 5.8393 8.6406 Case Foot Q1 Foot Q2 Thermal Capacitance (Joules/°C) Junction to Ambient Q1 Ambient Q2 CF1 5.6543 m 15.2614 m N/A 978.2987 u 1.1393 m CF2 23.4095 m 68.2351 m N/A 6.2472 m 27.8130 m CF3 387.1060 m 295.0292 m N/A 16.5248 m 135.4733 m CF4 1.8093 2.3726 N/A 255.7887 m 2.1878 Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 74613 Revision: 08-May-06 Si4724CY_RC Vishay Siliconix Document Number: 74613 Revision: 08-May-06 www.vishay.com 3 Si4724CY_RC Vishay Siliconix www.vishay.com 4 Document Number: 74613 Revision: 08-May-06