Si4808DY-RC

Si4808DY_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient Mosfet
Ambient Schottky
Case
Foot Mosfet
RT1
7.7167
N/A
N/A
5.9041
Foot Schottky
N/A
RT2
27.6552
N/A
N/A
1.4509
N/A
RT3
19.3975
N/A
N/A
15.0319
N/A
RT4
55.2306
N/A
N/A
17.6131
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient Mosfet
Ambient Schottky
Case
Foot Mosfet
Foot Schottky
CT1
3.0594 m
N/A
N/A
6.3103 m
N/A
CT2
63.2655 m
N/A
N/A
1.3993 m
N/A
CT3
16.0790 m
N/A
N/A
12.8503 m
N/A
CT4
1.4444
N/A
N/A
74.1888 m
N/A
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 73964
Revision: 14-Jun-07
www.vishay.com
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Si4808DY_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient Mosfet
Ambient Schottky
Case
Foot Mosfet
RF1
12.0643
N/A
N/A
2.9281
Foot Schottky
N/A
RF2
27.1714
N/A
N/A
17.4197
N/A
RF3
18.6585
N/A
N/A
12.5881
N/A
RF4
52.1058
N/A
N/A
7.0641
N/A
Junction to
Ambient Mosfet
Ambient Schottky
Case
Foot Mosfet
Foot Schottky
Thermal Capacitance (Joules/°C)
CF1
2.5723 m
N/A
N/A
830.0558 u
N/A
CF2
12.3410 m
N/A
N/A
4.6348 m
N/A
CF3
83.4669 m
N/A
N/A
26.4066 m
N/A
CF4
1.4280
N/A
N/A
177.4079 m
N/A
Note: NA indicates not applicable
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
www.vishay.com
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Document Number: 73964
Revision: 14-Jun-07
Si4808DY_RC
Vishay Siliconix
Document Number: 73964
Revision: 14-Jun-07
www.vishay.com
3