IL1205AT/1206AT/1207AT/1208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 °C Rated FEATURES A 1 8 NC • Operating temperature from - 55 °C to + 110 °C K 2 7 B • High BVCEO, 70 V NC 3 6 C • Isolation test voltage, 4000 VRMS NC 4 5 E • Industry standard SOIC-8 surface mountable package i179002 • Compatible with dual wave, vapor phase and IR reflow soldering • Lead (Pb)-free component DESCRIPTION The 110 °C IL1205AT/1206AT/1207AT/1208AT are optically coupled pairs with a gallium arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. This family comes in a standard SOIC-8 small outline package for surface mounting which makes them ideally suited for high density application with limited space. In addition to eliminating through-hole requirements, this package conforms to standards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher safety margin compared to the industry standard 30 V. • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • AC adapters • PLCs • Switch mode power supplies • DC/DC converters • Microprocessor I/O interfaces • General impedance matching circuits AGENCY APPROVALS • UL1577 - file no. E52744 system code Y • CUL - file no. E52744, equivalent to CSA bulletin 5A • DIN EN 60747-5-5 available with option 1 ORDER INFORMATION PART REMARKS IL1205AT CTR 40 to 80 %, SOIC-8 IL1206AT CTR 63 to 125 %, SOIC-8 IL1207AT CTR 100 to 200 %, SOIC-8 IL1208AT CTR 160 to 320 %, SOIC-8 ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT mA INPUT Continuous forward current IF 60 Peak reverse voltage VR 6.0 V Pdiss 90 mW 0.9 mW/°C Power dissipation Derate linearly from 25 °C OUTPUT Collector emitter voltage Collector current Power dissipation t < 1.0 ms VCE 70 V IC 50 mA IC 100 mA Pdiss 150 mW 1.5 mW/°C Derate linearly from 25 °C Document Number: 83549 Rev. 1.7, 08-May-08 For technical questions, contact: [email protected] www.vishay.com 301 IL1205AT/1206AT/1207AT/1208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 °C Rated (1) ABSOLUTE MAXIMUM RATINGS PARAMETER COUPLER Isolation test voltage Operating temperature Total package dissipation (LED and detector) Storage temperature TEST CONDITION SYMBOL VALUE UNIT VISO Tamb Ptot Tstg 4000 - 55 to + 110 240 - 55 to + 150 VRMS °C mW °C Tsld 260 °C max. 10 s, dip soldering distance to seating plane ≥ 1.5 mm Soldering temperature (2) Derate linearly from 25 °C 2.4 mW/°C Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SOP/SOIC). 100 80 Output Power Pdiss (mW) LED Power Pdiss (mW) 90 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 110 120 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 110 120 Tamb (°C) Tamb (°C) Fig. 1 - Input Power Dissipation (LED) vs. Ambient Temperature Fig. 2 - Output Power Dissipation vs. Ambient Temperature ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION INPUT Forward voltage Reverse current Capacitance OUTPUT Collector emitter leakage current Collector emitter breakdown voltage Emitter collector breakdown voltage Collector base breakdown current Saturation voltage, collector emitter PART SYMBOL IF = 10 mA VR = 6 V VR = 0 V VF IR CI VCE = 10 V IC = 100 µA IE = 100 µA ICEO BVCEO BVECO BVCBO VCEsat IC = 2 mA, IF = 10 mA MIN. 70 7.0 70 TYP. MAX. UNIT 1.3 0.1 13 1.5 100 V µA pF 5.0 50 nA V V V V 10 0.4 COUPLER IF = 10 mA, VCE = 5.0 V DC current transfer ratio IF = 1.0 mA, VCE = 5.0 V IL1205AT IL1206AT IL1207AT IL1208AT IL1205AT IL1206AT IL1207AT IL1208AT CTR CTR CTR CTR CTR CTR CTR CTR CIO 40 63 100 100 13 22 34 56 80 125 200 320 25 40 60 95 0.5 % % % % % % % % pF Capacitance (input to output) Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. www.vishay.com 302 For technical questions, contact: [email protected] Document Number: 83549 Rev. 1.7, 08-May-08 IL1205AT/1206AT/1207AT/1208AT Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection in SOIC-8 Package, 110 °C Rated SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Turn-on time IC = 2 mA, RL = 100 Ω, VCC = 10 V MIN. TYP. MAX. UNIT ton 3.0 µs Turn-off time IC = 2 mA, RL = 100 Ω, VCC = 10 V toff 3.0 µs Input Input t off t on VCC = 5 V t pdoff tpdon RL Output VOUT tr td tr ts 10 % 10 % 50 % 50 % 90 % 90 % i205at_11 Fig. 3 Switching Test Circuit SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. Climatic classification (according to IEC 68 part 1) TYP. MAX. UNIT 55/110/21 Pollution degree (DIN VDE 0109) 2.0 Comparative tracking index per DIN IEC 112/VDE 0303 part 1, group IIIa per DIN VDE 6110 175 399 CTI 175 VIOTM VIOTM 6000 V VIORM VIORM 560 V Resistance (input to output) 399 Ω 1012 RIO PSI 350 mW ISI 150 mA TSI 165 °C Creepage distance 4.0 mm Clearance distance 4.0 mm Note As per IEC 60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Document Number: 83549 Rev. 1.7, 08-May-08 For technical questions, contact: [email protected] www.vishay.com 303 IL1205AT/1206AT/1207AT/1208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 °C Rated TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 30 1.5 IF = 25 mA 25 Collector Current (mA) Forward Voltage VF (V) 1.4 + 110 °C 1.3 - 55 °C + 25 °C + 50 °C 0 °C 1.2 1.1 1.0 0.9 0.8 0.7 0.1 1.0 10.0 20 10 IF = 5 mA 5 IF = 1 mA IF = 2 mA 0 0.0 100.0 IF (mA) 0.1 0.2 1.1 1.0 IF = 30 mA 35 IF = 20 mA 30 IF = 15 mA 25 20 IF = 10 mA 15 10 Normalized CTR 40 IF = 5 mA 5 0 1 2 3 4 5 6 7 8 0.9 0.8 0.7 0.6 IF = 5 mA IF = 10 mA IF = 1 mA 0.5 0.4 0.3 0.2 Normalized to IF = 10 mA Tamb = 25 °C 0.1 0.0 0 9 10 - 55 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125 VCE (V) Fig. 5 - IC (Unsaturated) vs. VCE Tamb (°C) Fig. 8 - CTR Normalized to IF = 10 mA vs. Ambient Temperature, (Saturated, VCE = 0.4 V) 100000 1.2 10000 1.1 1000 1.0 40 V 100 Normalized CTR Collector to Emitter Leakage Current ICE0 (nA) 0.5 1.2 45 24 V 10 12 V 0.1 0.01 0.001 0.8 IF = 5 mA 0.7 0.6 0.5 IF = 1 mA 0.4 0.3 0.2 0.1 0.00001 0.0 - 55 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125 IF = 10 mA 0.9 0.0001 Normalized to IF = 10 mA Tamb = 25 °C - 55 - 40 - 25 - 10 5 20 35 50 65 80 95 110 125 Tamb (°C) Tamb (°C) Fig. 6 - Collector to Emitter Current vs. Ambient Temperature www.vishay.com 304 0.4 Fig. 7 - IC (Saturated) vs. VCE 50 1 0.3 VCE (V) Fig. 4 - Diode Forward Voltage VF vs. Forward Current Collector Current (mA) IF = 10 mA 15 Fig. 9 - CTR Normalized to IF = 10 mA vs. Ambient Temperature, (Non-Saturated, VCE = 5 V) For technical questions, contact: [email protected] Document Number: 83549 Rev. 1.7, 08-May-08 IL1205AT/1206AT/1207AT/1208AT Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection in SOIC-8 Package, 110 °C Rated 300 1.4 1.2 250 IL1208 IL1208 CTR CTR (%) IL1207 IL1207 150 0.8 IL1206 0.6 IL1206 100 0.4 50 0.2 IL1205 0 0.1 1.0 0.0 0.1 10.0 1.0 Fig. 10 - CTR vs. IF, (VCE = 5 V, Tamb = 25 °C) (Not Normalised) 1.2 IL1206 1.0 1.1 IL1205 Normalized hFE IL1208 IL1207 0.6 0.4 0.2 + 25 °C + 50 °C + 110 °C 0 °C 1.0 - 55 °C 0.9 0.8 VCE = 5 V 0.7 0.6 0.0 0.1 1.0 10.0 0.5 0.01 100.0 IF ( m A) 0.1 1 10 Fig. 14 - Normalized hFE vs. Base Current and Tamb (Non-Saturated Condition) 1.5 250 1.4 1.3 IL1208 150 Normalized hFE CTR (%) 100 Base Current (µA) Fig. 11 - CTR vs. IF, (VCE = 5 V, Tamb = 25 °C) Normalised to IF = 10 mA, Tamb = 25 °C 200 100.0 Fig. 13 - CTR vs. IF Saturated, Normalised to IF = 10 mA, Tamb = 25 °C 1.2 CTR 10.0 IF (mA) IF (mA) 0.8 IL1205 1.0 200 IL1207 100 IL1206 50 + 110 °C + 25 °C 0 °C 1.2 1.0 0.9 - 55 °C 0.8 0.7 IL1205 + 50 °C 1.1 VCE = 0.4 V 0.6 0 0.1 1.0 10.0 100.0 IF (mA) 0.1 1 10 100 Base Current (µA) Fig. 12 - CTR vs. IF Saturated, (VCE = 0.4 V, Tamb = 25 °C) Document Number: 83549 Rev. 1.7, 08-May-08 0.5 0.01 Fig. 15 - Normalized hFE vs. Base Current and Tamb (Saturated Condition) For technical questions, contact: [email protected] www.vishay.com 305 IL1205AT/1206AT/1207AT/1208AT Vishay Semiconductors Optocoupler, Phototransistor Output, 1000 100 100 + 110 °C toff + 50 °C - 55 °C 10 0 °C + 25 °C ton, toff (µs) Collector-Base-Photocurrent IBCP (µA) with Base Connection in SOIC-8 Package, 110 °C Rated 1 0.1 10 ton 0.01 0.001 0.1 1 1 10 100 0 1 IF (mA) 10 Load Resistance (kW) Fig. 16 - Collector Base Photocurrent vs. IF Fig. 19 - Switching Time ton, toff vs. Load Resistance (100 Ω to 5000 Ω) 16 1000 100 Switching Time (µs) Cut-off-Frequency fctr (kHz) 14 IL1207, IL1208 + 50 °C + 25 °C 0 °C 10 8 6 4 2 RBE = 500 k, V CE = 5 V Tamb = + 25 °C 0 1 10 0 100 5 10 19281 Ic (mA) 15 20 IF (mA) Fig. 20 - Switching Time vs. IF Fig. 17 - Cut-Off-Frequency (- 3 dB) vs. Collector Current 1000 30 toff Switching Time (µs) 25 100 ton, toff (µs) 10 ton VCE = 5 V, Tamb = 25 °C 1 0.1 toff 12 10 toff 20 15 10 ton 5 ton 1 0 1 10 100 0 10 Load Resistance (kW) Fig. 18 - Switching Time ton, toff vs. Load Resistance www.vishay.com 306 100 1000 RBE (kW) 10000 Fig. 21 - Switching Time vs. RBE, IF = 10 mA For technical questions, contact: [email protected] Document Number: 83549 Rev. 1.7, 08-May-08 IL1205AT/1206AT/1207AT/1208AT Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection in SOIC-8 Package, 110 °C Rated PACKAGE DIMENSIONS in inches (millimeters) 0.120 ± 0.005 (3.05 ± 0.13) R 0.010 (0.13) 0.240 (6.10) CL 0.154 ± 0.005 0.050 (1.27) 0.014 (0.36) (3.91 ± 0.13) 0.036 (0.91) 0.170 (4.32) 0.016 Pin one ID 0.045 (1.14) (0.41) 0.260 (6.6) 7° 0.058 ± 0.005 0.192 ± 0.005 0.015 ± 0.002 (4.88 ± 0.13) 40° (1.49 ± 0.13) (0.38 ± 0.05) 0.004 (0.10) 0.125 ± 0.005 0.008 (0.20) 0.008 (0.20) (3.18 ± 0.13) 5° max. 0.050 (1.27) typ. 0.020 ± 0.004 ISO method A 0.021 (0.53) R 0.010 Lead coplanarity (0.25) max. ± 0.0015 (0.04) max. (0.51 ± 0.10) 2 places i178003 Document Number: 83549 Rev. 1.7, 08-May-08 For technical questions, contact: [email protected] www.vishay.com 307 IL1205AT/1206AT/1207AT/1208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 °C Rated OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 308 For technical questions, contact: [email protected] Document Number: 83549 Rev. 1.7, 08-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1