IL205AT/206AT/207AT/208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package FEATURES • High BVCEO, 70 V • Isolation test voltage, 4000 VRMS A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E • Industry standard mountable package SOIC-8A surface • Compatible with dual wave, vapor phase and IR reflow soldering • Lead (Pb)-free component i179002 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS DESCRIPTION • UL1577, file no. E52744 system code Y The IL205AT/IL206AT/IL207AT/IL208AT are optically coupled pairs with a gallium arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. This family comes in a standard SOIC-8A small outline package for surface mounting which makes them ideally suited for high density application with limited space. In addition to eliminating through-hole requirements, this package conforms to standards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher safety margin compared to the industry standard 30 V. • CUL - file no. E52744, equivalent to CSA bulletin 5A • DIN EN 60747-5-5 available with option 1 ORDER INFORMATION PART IL205AT REMARKS CTR 40 to 80 %, SOIC-8 IL206AT CTR 63 to 125 %, SOIC-8 IL207AT CTR 100 to 200 %, SOIC-8 IL208AT CTR 160 to 320 %, SOIC-8 Document Number: 83614 Rev. 1.9, 08-May-08 For technical questions, contact: [email protected] www.vishay.com 313 IL205AT/206AT/207AT/208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Peak reverse voltage VR 6 V Forward continuous current IF 60 mA Power dissipation Pdiss Derate linearly from 25 °C 90 mW 1.2 mW/°C OUTPUT Collector emitter breakdown voltage BVCEO 70 V Emitter collector breakdown voltage BVECO 7 V Collector-base breakdown voltage BVCBO 70 V ICMAX DC 50 mA ICMAX 100 mA Pdiss 150 mW 2 mW/°C VISO 4000 VRMS Ptot 240 mW 3.3 mW/°C Operating temperature Tamb - 55 to + 100 °C Storage temperature Tstg - 55 to + 150 °C 10 s ICMAX DC ICMAX t < 1 ms Power dissipation Derate linearly from 25 °C COUPLER Isolation test voltage Total package dissipation (LED and detector) Derate linearly from 25 °C Soldering time at 260 °C Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT VF 1.3 1.5 V 100 µA INPUT Forward voltage IF = 10 mA Reverse current VR = 6 V IR 0.1 Capacitance VR = 0 V CO 13 pF OUTPUT Collector emitter breakdown voltage IC = 100 µA BVCEO 70 Emitter collector breakdown voltage IE = 100 µA BVECO 7 Collector emitter leakage current VCE = 10 V ICEO IC = 2 mA, IF = 10 mA VCEsat V 10 5 V 50 nA 0.4 V COUPLER Saturation voltage, collector emitter Capacitance, input to output CIO 0.5 pF Resistance, input to output RIO 100 GΩ Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. www.vishay.com 314 For technical questions, contact: [email protected] Document Number: 83614 Rev. 1.9, 08-May-08 IL205AT/206AT/207AT/208AT Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection in SOIC-8 Package CURRENT TRANSFER RATIO PARAMETER TEST CONDITION IF = 10 mA, VCE = 5 V Current transfer ratio IF = 1 mA, VCE = 5 V PART SYMBOL MIN. MAX. UNIT IL205AT CTR 40 TYP. 80 % IL206AT CTR 63 125 % IL207AT CTR 100 200 % IL208AT CTR 100 320 % IL205AT CTR 13 25 % IL206AT CTR 22 40 % IL207AT CTR 34 60 % IL208AT CTR 56 95 % PART SYMBOL MIN. TYP. SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION Switching time IC = 2 mA, RL = 100 Ω, VCC = 10 V ton, toff MAX. 3 UNIT µs SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. Climatic classification (according to IEC 68 part 1) TYP. MAX. UNIT 55/100/21 Comparative tracking index CTI 175 399 VIOTM 6000 V VIORM 560 V PSO 350 mW ISI 150 mA TSI 165 Creepage 4 Clearance Insulation thickness, reinforced rated per IEC 60950 2.10.5.1 °C mm 4 mm 0.2 mm Note As per IEC 60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Document Number: 83614 Rev. 1.9, 08-May-08 For technical questions, contact: [email protected] www.vishay.com 315 IL205AT/206AT/207AT/208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 100 1.3 1.2 NICB - Normalized (ICB ) VF - Forward Voltage (V) 1.4 TA = - 55 °C 1.1 TA = 25 °C 1.0 0.9 TA = 85 °C 0.8 1 10 IF - Forward Current (mA) 10 Normalized to: VCE = 10 V IF = 10 mA VCE = 5 V 1.0 0.5 1 10 100 I F - LED Current (mA) Fig. 4 - Normalized Collector-Base Photocurrent vs. LED Current NICB - Normalized (I CB ) NCTRCE - Normalized CTRCE 0.1 i205at_04 Normalized to: VCB = 9.3 V IF = 10 mA 1 0.1 VCE = 0.4 V 0.01 0.1 0 i205at_02 1 10 100 Fig. 2 - Normalized Non-Saturated and Saturated CTRCE vs. LED Current 150 VCE = 10 V 100 50 VCE = 0.4 V 0 0.1 i205at_03 1 10 100 IF - LED Current (mA) Fig. 3 - Collector Emitter Current vs. LED Current www.vishay.com 316 1 10 100 IF - LED Current (mA) i205at_05 I F - LED Current (mA) Fig. 5 - Normalized Collector-Base Photocurrent vs. LED Current ICB - Collector Base Current (µA) 0.1 ICE - Collector Emitter Current (mA) 1 100 Fig. 1 - Forward Voltage vs. Forward Current 1.5 10 0.1 0.7 0.1 i205at_01 Normalized to: VCB = 9.3 V IF = 1 mA 1000 VCB = 9.3 V 100 10 1 0.1 0.1 i205at_06 1 10 100 IF - LED Current (mA) Fig. 6 - Collector Emitter Photocurrent vs. LED Current For technical questions, contact: [email protected] Document Number: 83614 Rev. 1.9, 08-May-08 IL205AT/206AT/207AT/208AT 1000 2.0 VCB = 9.3 V NhFE(sat) Normalized Saturated hFE ICB - Collector Base Current (µA) Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection in SOIC-8 Package 100 10 1 0.1 0.1 1 10 1.0 0.5 VCE = 0.4 V 10 100 1000 IB - Base Current (µA) i205at_08 Fig. 7 - Collector Emitter Photocurrent vs. LED Current Normalized to: IB = 20 µA VCE = 10 V 25 °C 1.5 0.0 0.1 100 IF - LED Current (mA) i205at_06 25 °C 50 °C Fig. 9 - Typical Switching Characteristics vs. Base Resistance (Saturated Operation) ICEO - Collector Emitter (nA) 10 5 10 4 10 3 10 2 VCE = 10 V 10 1 Typical 10 0 10 -1 10 -2 - 20 i205at_07 0 20 40 60 80 100 TA - Ambient Temperature (°C) Fig. 8 - Base Current vs. IF and hFE Input Input t off t on VCC = 5 V t pdoff tpdon RL Output VOUT td tr ts tr 10 % 10 % 50 % 50 % 90 % 90 % i205at_11 Fig. 10 Switching Test Circuit Document Number: 83614 Rev. 1.9, 08-May-08 For technical questions, contact: [email protected] www.vishay.com 317 IL205AT/206AT/207AT/208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package PACKAGE DIMENSIONS in inches (millimeters) 0.120 ± 0.005 (3.05 ± 0.13) R 0.010 (0.13) 0.240 (6.10) CL 0.154 ± 0.005 0.050 (1.27) 0.014 (0.36) (3.91 ± 0.13) 0.036 (0.91) 0.170 (4.32) 0.016 Pin one ID 0.045 (1.14) (0.41) 0.260 (6.6) 7° 0.058 ± 0.005 0.192 ± 0.005 0.015 ± 0.002 (4.88 ± 0.13) 40° (1.49 ± 0.13) (0.38 ± 0.05) 0.004 (0.10) 0.125 ± 0.005 0.008 (0.20) 0.008 (0.20) (3.18 ± 0.13) 5° max. 0.050 (1.27) typ. 0.020 ± 0.004 ISO method A 0.021 (0.53) R 0.010 Lead coplanarity (0.25) max. ± 0.0015 (0.04) max. (0.51 ± 0.10) 2 places i178003 www.vishay.com 318 For technical questions, contact: [email protected] Document Number: 83614 Rev. 1.9, 08-May-08 IL205AT/206AT/207AT/208AT Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection in SOIC-8 Package OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83614 Rev. 1.9, 08-May-08 For technical questions, contact: [email protected] www.vishay.com 319 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1