VO211AT, VO212AT, VO213AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package FEATURES A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E • Isolation test voltage, 4000 VRMS • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC i179002 DESCRIPTION AGENCY APPROVALS The VO211AT, VO212AT, VO213AT are optically coupled pairs with a gallium arsenide infrared LED and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The VO211AT, VO212AT, VO213AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. • UL1577, file no. E52744 system code Y • CUL - file no. E52744, equivalent to CSA bulletin 5A • DIN EN 60747-5-5 (VDE 0884) available with option 1 ORDER INFORMATION PART REMARKS VO211AT CTR > 20 %, SOIC-8 VO212AT CTR > 50 %, SOIC-8 VO213AT CTR > 100 %, SOIC-8 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION INPUT Peak reverse voltage Peak forward current Forward continuous current Power dissipation Derate linearly from 25 °C OUTPUT Collector emitter breakdown voltage Emitter collector breakdown voltage Collector base breakdown voltage ICmax. DC ICmax. Power dissipation Derate linearly from 25 °C COUPLER Isolation test voltage Total package dissipation Derate linearly from 25 °C Storage temperature Operating temperature Soldering time 1 µs, 300 pps t < 1 ms SYMBOL VALUE UNIT VR IFM IF Pdiss 6 1 60 90 1.2 V A mA mW mW/°C BVCEO BVECO BVCBO 30 7 70 50 100 150 2 V V V mA mA mW mW/°C 4000 240 3.2 - 40 to + 150 - 40 to + 100 10 VRMS mW mW/°C °C °C s ICmax. DC ICmax. Pdiss LED and detector VISO Ptot at 260 °C Tstg Tamb Tsld Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. Document Number: 81958 Rev. 1.0, 02-Dec-08 For technical questions, contact: [email protected] www.vishay.com 1 VO211AT, VO212AT, VO213AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.3 1.5 V Reverse current VR = 6 V IR 0.1 100 µA Capacitance VR = 0 V CO 13 IC = 100 µA BVCEO Emitter collector breakdown voltage IE = 10 µA Collector base breakdown voltage IC = 100 µA pF OUTPUT Collector emitter breakdown voltage Collector base current 30 V BVECO 7 V BVCBO 100 V ICBO Emitter base current 1 IEBO Collector dark current VCE = 10 V ICEO 5 10 Collector emitter capacitance VCE = 0 V CCE Saturation voltage, collector emitter IF = 10 mA VCEsat 1s VISO nA 1 nA 50 nA pF 0.4 V COUPLER Isolation test voltage 4000 VRMS Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER Current transfer ratio www.vishay.com 2 TEST CONDITION IF = 10 mA, VCE = 5 V PART SYMBOL MIN. TYP. VO211AT CTR 20 50 % VO212AT CTR 50 80 % VO213AT CTR 100 130 % For technical questions, contact: [email protected] MAX. UNIT Document Number: 81958 Rev. 1.0, 02-Dec-08 VO211AT, VO212AT, VO213AT Optocoupler, Phototransistor Output, with Vishay Semiconductors Base Connection in SOIC-8 Package SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Turn-on time IC = 2 mA, RL = 100 Ω, VCC = 10 V ton 3 µs Turn-off time IC = 2 mA, RL = 100 Ω, VCC = 10 V toff 3 µs Rise time IC = 2 mA, RL = 100 Ω, VCC = 10 V tr 3 µs Fall time IC = 2 mA, RL = 100 Ω, VCC = 10 V tf 2 µs Input 0 VCC = 5 V ton Input RL VOUT toff trise Output tfall V0 10 % 10 % 50 % 50 % 90 % 90 % iil215at_17 Fig. 1 - Switching Test Circuit COMMON MODE TRANSIENT IMMUNITY TEST CONDITION SYMBOL Common mode transient immunity at logic high PARAMETER VCM = 1000 VP-P, RL = 1 kΩ, IF = 0 mA MIN. TYP. MAX. UNIT |CMH| 5000 V/µs Common mode transient immunity at logic low VCM = 1000 VP-P, RL = 1 kΩ, IF = 10 mA |CML| 5000 V/µs dV = 63 % of VCM B 1 7 RL 1K dV = 63 % of VCM Common mode voltage VCM 6 RF A VO 2, 3, 4 5 5 VDC + - dt dt 0.1 µF VO VB = 4.5 V CMH 2.0 V 2.0 V CML VO VCM 21627 Time 0.8 V Input from HV pulse source 0.8 V 21626 Fig. 2 - Test Circuit for Common Mode Transient Immunity Document Number: 81958 Rev. 1.0, 02-Dec-08 For technical questions, contact: [email protected] www.vishay.com 3 VO211AT, VO212AT, VO213AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. Climatic classification (according to IEC 68 part 1) MAX. UNIT 40/100/21 Polution degree 2 Comparative tracking index CTI 175 VISO 4000 Peak transient overvoltage VIOTM 6000 V Peak insulation voltage VIORM 560 V Isolation test voltage 1s 399 VRMS Resistance (input to output) RIO Safety rating - power output PSO 350 mW Safety rating - input current ISI 150 mA Safety rating - temperature TSI 165 100 GΩ °C External creepage distance 4 mm External clearance distance 4 mm Internal creepage distance 3.3 mm Insulation thickness 0.2 mm Note As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified NCTRCE - Normalized (CTR CE ) VF - Forward Voltage (V) 1.4 1.3 Ta = - 55 °C 1.2 Ta = 25 °C 1.1 1.0 0.9 Ta = 100 °C 0.8 0.7 0.1 iil211at_01 Normalized to: VCE = 10 V IF = 10 mA TA = 25 °C 1.0 VCE = 5 V 0.5 VCE = 0.4 V 0.0 1 10 100 IF - Forward Current (mA) Fig. 3 - Forward Voltage vs. Forward Current www.vishay.com 4 1.5 0.1 iil211at_02 1 10 100 IF - LED Current (mA) Fig. 4 - Normalized Non-Saturated and Saturated CTRCE vs. LED Current For technical questions, contact: [email protected] Document Number: 81958 Rev. 1.0, 02-Dec-08 VO211AT, VO212AT, VO213AT 150 TA = 25 °C VCE = 10 V 100 50 VCE = 0.4 V 0 0.1 1 10 10 1 0.1 0.1 1 10 100 IF - LED Current (mA) Fig. 8 - Collector Base Photocurrent vs. LED Current Normalized to: VCB = 9.3 V I F = 1 mA TA = 25 °C ICEO - Collector Emitter (nA) NICB - Normalized ICB 100 10 5 100 10 1 0.1 0.1 1 10 10 3 10 2 VCE = 10 V 10 1 Typical 10 0 10 -1 10 -2 - 20 0 NHFE(sat) - Normalized Saturated hFE 1 0.1 40 60 80 100 Fig. 9 - Collector Emitter Leakage Current vs. Temperature 2.0 Normalized to: VCB = 9.3 V IF = 10 mA TA = 25 °C 20 Tamb - Ambient Temperature (°C) iil211at_07 Fig. 6 - Normalized Collector Base Photocurrent vs. LED Current 10 10 4 100 IF - LED Current (mA) iil211at_04 NICB - Normalized (ICB ) TA = 25 °C VCB = 9.3 V iil211at_06 Fig. 5 - Collector Emitter Current vs. LED Current 0.01 1000 100 IF - LED Current (mA) iil211at_03 ICB - Collector Base Current (µA) ICE - Collector Emitter Current (mA) Optocoupler, Phototransistor Output, with Vishay Semiconductors Base Connection in SOIC-8 Package 70 °C 50 °C 1.5 25 °C Normalized to: Ib = 20 µA VCE = 10 V Ta = 25 °C 1.0 VCE = 0.4 V 0.5 0.0 0.1 iil211at_05 1 10 100 IF - LED Current (mA) Fig. 7 - Normalized Collector Base Photocurrent vs. LED Current Document Number: 81958 Rev. 1.0, 02-Dec-08 1 iil211at_08 10 100 1000 Ib - Base Current (µA) Fig. 10 - Normalized Saturated hFE vs. Base Current and Temperature For technical questions, contact: [email protected] www.vishay.com 5 VO211AT, VO212AT, VO213AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package Switching Time (µs) 50 Input: IF = 10 mA Pulse width = 100 ms Duty Cycle = 50 % 1000 500 Switching Time (µs) 100 TOFF 10 5 TON 1.0 10 K iil211at_09 50 K 100 K Input: IF = 10 mA Pulse with = 100 ms Duty Cycle = 50 % 100 50 10 iil211at_10 Fig. 11 - Typical Switching Characteristics vs. Base Resistance (Saturated Operation) TON 5 1 0.1 500 K 1 M Base Emitter Resistancs, RBE (Ω) TOFF 0.5 1 5 10 50 100 Load Resistance RL (kΩ) Fig. 12 - Typical Switching Times vs.Load Resistance PACKAGE DIMENSIONS in inches (millimeters) 0.120 ± 0.005 (3.05 ± 0.13) R 0.010 (0.13) 0.240 (6.10) CL 0.154 ± 0.005 0.050 (1.27) 0.014 (0.36) (3.91 ± 0.13) 0.036 (0.91) 0.170 (4.32) 0.016 Pin one ID (0.41) 7° 0.058 ± 0.005 0.192 ± 0.005 0.015 ± 0.002 (4.88 ± 0.13) 0.045 (1.14) 0.260 (6.6) 40° (1.49 ± 0.13) (0.38 ± 0.05) 0.004 (0.10) 0.125 ± 0.005 0.008 (0.20) 0.008 (0.20) (3.18 ± 0.13) 5° max. 0.050 (1.27) typ. 0.020 ± 0.004 ISO method A 0.021 (0.53) R 0.010 Lead coplanarity (0.25) max. ± 0.0015 (0.04) max. (0.51 ± 0.10) 2 places i178003 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 81958 Rev. 1.0, 02-Dec-08 VO211AT, VO212AT, VO213AT Optocoupler, Phototransistor Output, with Vishay Semiconductors Base Connection in SOIC-8 Package OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 81958 Rev. 1.0, 02-Dec-08 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1