Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC985 v01.0114 GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, 20 - 50 GHz attenuators - analog - Chip 0 Typical Applications Features The HMC985 is ideal for: Wide Bandwidth: 20 - 50 GHz • Point-to-Point Radio Excellent Linearity: +32 dB Input IP3 • VSAT Radio Wide Attenuation Range: 35 dB • Test Instrumentation Die Size: 2.78 x 1.37 x 0.1 mm • Microwave Sensors General Description • Military, ECM & Radar The HMC985 is an absorptive Voltage Variable Attenuator (VVA) which operates from 20 - 50 GHz and is ideal in designs where an analog DC control signal must be used to control RF signal levels over a 35 dB dynamic range. It features two shunt-type attenuators which are controlled by two analog voltages, Vctrl1 and Vctrl2. Optimum linearity performance of the attenuator is achieved by first varying Vctrl1 of the first attenuation stage from -3V to 0V with Vctrl2 fixed at -3V. The control voltage of the second attenuation stage, Vctrl2, should then be varied from -3V to 0V with Vctrl1 fixed at 0V. Functional Diagram However, if the Vctrl1 and Vctrl2 pins are connected together it is possible to achieve the full analog attenuation range with only a small degradation in input IP3 performance. Applications include AGC circuits and temperature compensation of multiple gain stages in microwave point to point and VSAT radios. Electrical Specifications, TA = +25 °C, See Test Conditions Parameter Insertion Loss Condition Typ. Max. Units 20 - 27 Min. 3 3.5 dB 27 - 35 3 4 dB 3.5 4.5 dB 35 - 50 20 - 27 25 30 dB 27 - 35 30 35 dB 35 - 50 35 40 dB Input Return Loss 13 dB Output Return Loss 13 dB 33 dBm Attenuation Range Input Third Order Intercept (two-tone input Power = 10 dBm Each Tone) [1] [1] VCTR2 = -3, VCTR1 = -2.0 worst case 0-1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC985 v01.0114 GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, 20 - 50 GHz Attenuation vs. Frequency over Vcntl = Variable, Vcntrl2 = -3V Attenuation vs. Frequency over Vcntl1 = 0V, Vctrl2 = Variable 0 -10 ATTENUATION (dB) ATTENUATION (dB) -10 -15 -2.4V -2.0V -1.6V -1.2V -0.8V -0.4V 0.0V -20 -20 -30 -40 -2.4V -2.0V -1.6V -1.2V -0.8V -0.4V 0.0V -50 -60 -25 -70 20 25 30 35 40 45 50 20 25 30 FREQUENCY (GHz) 35 40 45 50 FREQUENCY (GHz) Attenuation vs. Vcnrl1 Over Temperature @ 30 GHz, Vctrl2 = -3V Attenuation vs. Vcntrl2 Over Temperature @ 30 GHz, Vctrl1 = 0V 0 0 -5 -3 +25C +85C -55C +25C +85C -55C ATTENUATION (dB) -10 -6 -9 -12 -15 -20 -25 -30 -35 attenuators - analog - Chip 0 -5 ATTENUATION (dB) 0 -40 -15 -2.4 -2 -1.6 -1.2 -0.8 -0.4 -45 -2.4 0 -2 -1.6 Vctrl1 (V) Attenuation vs. Pin @ 30 GHz Vctrl1 = Variable, Vctrl2 = -3V -0.8 -0.4 0 Attenuation vs. Pin @ 30 GHz Vctrl2 = Variable, Vctrl1 = 0V 0 0 -4 -2.4 V -2.0 V -1.6V -1.2V -10 ATTENUATION (dB) ATTENUATION (dB) -1.2 Vctrl1 (V) -8 -12 -16 -2.4 V -2.0 V -1.6V -1.2V -20 -0.8 V -0.4V 0.0 V -0.8 V -0.4V 0.0 V -20 -30 -40 -50 -24 0 3 6 9 12 15 INPUT POWER (dBm) 18 21 24 0 3 6 9 12 15 18 21 24 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 0-2 HMC985 v01.0114 GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, 20 - 50 GHz Input Return Loss Vctrl1 = 0V, Vctrl2 = Variable 0 0 -10 -10 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss Vctrl1 = Variable, Vctrl2 = -3V -20 -2.4V -1.2V 0.0V -30 -40 -20 -2.4V -1.2V 0.0V -30 -40 20 25 30 35 40 45 50 20 25 30 FREQUENCY (GHz) 40 45 50 Output Return Loss Vctrl1 = 0V, Vctrl2 = Variable 0 -10 -10 RETURN LOSS (dB) 0 -20 -2.4V -1.2V 0.0V -30 -40 -20 -2.4V -1.2V 0.0V -30 -40 20 25 30 35 40 45 50 20 25 30 FREQUENCY (GHz) 35 40 45 50 FREQUENCY (GHz) Input IP3 vs. Input Power @ 30 GHz Vctrl1 = Variable, Vctrl2 = -3V Input IP3 vs. Input Power @ 30 GHz Vctrl1 = -2V, Vctrl2 = -3V [1] 60 40 50 38 40 36 30 IP3 (dBm) IP3 (dBm) 35 FREQUENCY (GHz) Output Return Loss Vctrl1 = Variable, Vctrl2 = -3V RETURN LOSS (dB) attenuators - analog - Chip 0 -2.4V -2.0V -1.6V -1.2V -0.8V -0.4V 0.0V 20 34 20 GHz 30 GHz 40 GHz 32 10 30 0 4 8 12 16 SINGLE TONE INPUT POWER (dBm) 20 0 2 4 6 8 10 12 14 16 18 20 SINGLE TONE INPUT POWER (dBm) [1] Worst Case IP3 0-3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC985 v01.0114 GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, 20 - 50 GHz 60 38 50 36 40 +25 C +85 C -55 C 32 30 -2.4V -2.0V -1.6V -1.2V -0.8V -0.4V 0.0V 20 30 10 0 2 4 6 8 10 12 14 16 18 20 0 4 SINGLE TONE INPUT POWER (dBm) Input IP3 vs. Input Power Over Frequency Vctrl2 = -2V, Vctrl1 = 0V [1] 12 16 20 Input IP3 vs Input Power over Temperature @ 30 GHz, Vctrl2 = -2V, Vctrl1 = 0V [1] 45 45 20 GHz 30 GHz 40 GHz 43 43 41 IP3 (dBm) IP3 (dBm) 8 SINGLE TONE INPUT POWER (dBm) 39 37 41 39 +25 C +85 C -55 C 37 35 attenuators - analog - Chip 40 34 0 Input IP3 vs. Input Power @ 30 GHz Vctrl2 = Variable, Vctrl1 = 0V IP3 (dBm) IP3 (dBm) Input IP3 vs. Input Power Over Temperature @ 30 GHz, Vctrl1 = -2V, Vctrl2 = -3V [1] 35 0 2 4 6 8 10 12 14 16 SINGLE TONE INPUT POWER (dBm) 18 20 0 2 4 6 8 10 12 14 16 18 20 SINGLE TONE INPUT POWER (dBm) [1] Worst Case IP3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 0-4 HMC985 v01.0114 GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, 20 - 50 GHz 0 Attenuation vs Frequency Over Vctrl VCtrl1 = Vctrl2 Attenuation vs. Vctrl Over Temperature @ 35 GHz, Vctrl1 = Vctrl2 0 -5 -10 +25C +85C -55C -20 ATTENUATION (dB) ATTENUATION (dB) -10 -30 -40 -2.4V -2.0V -1.6V -1.2V -0.8V -0.4V 0.0V -50 -60 20 25 -15 -20 -25 -30 -35 -40 -70 30 35 40 45 -45 -2.4 50 -2 -1.6 -0.8 -0.4 0 Vctrl1 (V) Attenuation vs. Pin @ 30 GHz Over Vctrl Vctrl1 = Vctrl2 Input Return Loss, Vctrl1 = Vctrl2 0 0 RETURN LOSS (dB) -10 -20 -30 -40 -2.4 V -2.0 V -1.6V -1.2V -50 0 3 6 9 -10 -20 -2.4V -1.2V 0.0V -30 -0.8 V -0.4V 0.0 V -40 -60 12 15 18 21 20 24 25 30 40 45 50 Input IP3 vs. Input Power Over Vctrl @ 30 GHz, Vctrl1 = Vctrl2 Output Return Loss, Vctrl1 = Vctrl2 60 0 50 -10 IP3 (dBm) RETURN LOSS (dB) 35 FREQUENCY (GHz) INPUT POWER (dBm) -20 -2.4V -1.2V 0.0V -30 40 30 -2.4V -2.0V -1.6V -1.2V -0.8V -0.4V 0.0V 20 10 -40 20 25 30 35 40 FREQUENCY (GHz) 0-5 -1.2 FREQUENCY (GHz) ATTENUATION (dB) attenuators - analog - Chip 0 45 50 0 4 8 12 16 20 SINGLE TONE INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC985 v01.0114 GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, 20 - 50 GHz Input IP3 vs. Input Power Over Frequency Vctrl1 = Vctrl2 20 GHz 30 GHz 40 GHz 33 33 IP3 (dBm) 31 29 31 29 +25 C +85 C -55 C 27 27 25 25 0 2 4 6 8 10 12 14 16 SINGLE TONE INPUT POWER (dBm) 18 20 0 2 4 6 8 10 12 14 16 18 20 SINGLE TONE INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] attenuators - analog - Chip 35 35 IP3 (dBm) 0 Input IP3 vs. Input Power Over Temperature @ 30 GHz Vctrl1 = Vctrl2 0-6 HMC985 v01.0114 GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, 20 - 50 GHz attenuators - analog - Chip 0 Absolute Maximum Ratings ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Control Voltage +1 to -5V Input RF Power 30 dBm Maximum Junction Temperature 165 °C Thermal Resistance (RTH) (junction to ground paddle) 62 °C/W Operating Temperature -40°C to +85°C Storage Temperature -65°C to 125°C Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 0-7 NOTES: 1.ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3.TYPICAL BOND PAD IS 0.0026” [0.066] SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC985 v01.0114 GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, 20 - 50 GHz 0 Pad Descriptions Function Description 1 RFIN This pad is DC coupled and matched to 50 Ohms 2 RFOUT This pad is DC coupled and matched to 50 Ohms 3 Vctrl2 Control Voltage 2 4 Vctrl1 Control Voltage 1 Die Bottom GND Die bottom must be connected to RF/DC ground Pin Schematic Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] attenuators - analog - Chip Pad Number 0-8 HMC985 v01.0114 GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, 20 - 50 GHz attenuators - analog - Chip 0 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127 mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254 mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150 mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102 mm (4 mil) thick die to a 0.150 mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076 mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). 0-9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC985 v01.0114 GaAs MMIC VOLTAGE - VARIABLE ATTENUATOR, 20 - 50 GHz 0 attenuators - analog - Chip Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 0 - 10