Design Assistance Customised Pack Sizes / Qtys Assembly Assistance Support for all industry recognised supply formats: Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming o Waffle Pack o Gel Pak o Tape & Reel Onsite storage, stockholding & scheduling 100% Visual Inspection o MIL-STD 883 Condition A o MIL-STD 883 Condition A On-site failure analysis Bespoke 24 Hour monitored storage systems for secure long term product support On-site failure analysis Contact [email protected] For price, delivery and to place orders HMC986 www.analog.com www.micross.com Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC986 v01.0212 SWITCHES - CHIP GaAs MMIC REFLECTIVE SPDT SWITCH, 0.1 - 50 GHz Typical Applications Features The HMC986 is ideal for: Wideband Performance: 0.1 to 50 GHz • Wideband Switching Matrices Low Insertion Loss: 1.9 dB at 40 GHz • High Speed Data Infrastructure High Isolation: 31 dB at 40 GHz • Military Comms, RADAR, and ECM Fast Switching Speed: 10 ns • Test and Measurement Equipment Compact Die Size: 0.98 x 0.75 x 0.1 mm • Jamming and EW Subsystems Functional Diagram General Description The HMC986 is a wideband GaAs pHEMT MMIC Single Pole Double Throw (SPDT) switch die. This tiny switch employs a reflective topology and is controlled with two complementary inputs of 0/-3V to 0/-5V. With an input signal at 40 GHz, the HMC986 exhibits 20 dB return loss, 31 dB isolation, and only 1.9 dB insertion loss. The combination of wideband performance and fast switching speed make this switch ideal for test equipment, switching matrices, and electronic warfare (EW) applications. RF performance is independent of high level control voltages, and is shown at both -3V and -5V for completeness. Electrical Specifications, TA = +25° C, With 0/-3V to -5V Control, 50 Ohm System Parameter Insertion Loss Isolation 0.1 - 18 GHz 18 - 40 GHz 40 - 50 GHz Return Loss 1 Frequency 0.1 - 18 GHz 18 - 40 GHz 40 - 50 GHz “On State” Min. 30 25 22 Typ. Max. Units 1.7 1.9 2.2 2.3 2.5 2.8 dB dB dB 36 32 28 dB dB dB 0.1 - 50 GHz 20 dB Input Power for 0.1 dB Compression 0.1 - 2 GHz 2 - 50 GHz 5 21 dBm dBm Input Power for 1.0 dB Compression 0.1 - 2 GHz 2 - 50 GHz 10 25 dBm dBm Input Third Order Intercept (Two-Tone Input Power = 0 dBm Each Tone, 1 MHz Tone Separation) 0.1 - 2 GHz 2 - 50 GHz 20 40 dBm dBm Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 0.1 - 50 GHz 1 10 ns ns 22 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC986 v01.0212 GaAs MMIC REFLECTIVE SPDT SWITCH, 0.1 - 50 GHz 0 -1 -1 INSERTION LOSS (dB) INSERTION LOSS (dB) 0 -2 +25 C +85 C -55 C -3 -4 -2 +25 C +85 C -55 C -3 -4 -5 -5 0 10 20 30 40 50 0 60 10 40 50 60 50 60 50 60 0 0 RF1 RF2 RF1 RF2 -15 ISOLATION (dB) -15 ISOLATION (dB) 30 Isolation @-3V Isolation @-5V -30 -45 -30 -45 -60 -60 -75 -75 0 10 20 30 40 50 0 60 10 20 30 40 FREQUENCY (GHz) FREQUENCY (GHz) Return Loss @-3V Return Loss @-5V 0 0 RFC RF1 RF2 -10 RETURN LOSS (dB) RETURN LOSS (dB) 20 FREQUENCY (GHz) FREQUENCY (GHz) SWITCHES - CHIP Insertion Loss @-3V Insertion Loss @-5V -20 -30 -40 0 10 20 30 40 FREQUENCY (GHz) 50 60 RFC RF1 RF2 -10 -20 -30 -40 0 10 20 30 40 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC986 v01.0212 GaAs MMIC REFLECTIVE SPDT SWITCH, 0.1 - 50 GHz Input Power for 0.1 dB Compression @-5V Input Power for 0.1 dB Compression @-3V COMPRESSION POINT (dBm) COMPRESSION POINT (dBm) 25 20 15 +25 C +85 C -55 C 10 5 0 20 15 +25 C +85 C -55 C 10 5 0 0 10 20 30 40 0 10 FREQUENCY (GHz) 25 20 20 COMPRESSION POINT (dBm) 25 15 10 +25 C +85 C -55 C 5 0 40 15 10 +25 C +85 C -55 C 5 0 -5 0 0.1 1 10 100 0 0.1 FREQUENCY (GHz) 1 10 100 FREQUENCY (GHz) Input Power for 1.0 dB Compression @-5V (Low Frequency Detail) Input Power for 1.0 dB Compression @-3V (Low Frequency Detail) 30 30 25 25 COMPRESSION POINT (dBm) COMPRESSION POINT (dBm) 30 Input Power for 0.1 dB Compression @-3V (Low Frequency Detail) -5 20 15 +25 C +85 C -55 C 10 5 0 20 15 +25 C +85 C -55 C 10 5 0 0 0.1 1 FREQUENCY (GHz) 3 20 FREQUENCY (GHz) Input Power for 0.1 dB Compression @-5V (Low Frequency Detail) COMPRESSION POINT (dBm) SWITCHES - CHIP 25 10 100 0 0.1 1 10 100 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC986 v01.0212 GaAs MMIC REFLECTIVE SPDT SWITCH, 0.1 - 50 GHz 50 40 40 30 +25 C +85 C -55 C 20 +25 C +85 C -55 C 20 10 10 0 10 20 FREQUENCY (GHz) 30 40 Input Third Order Intercept Point @-5V (Low Frequency Detail) 0 50 50 40 40 30 +25 C +85 C -55 C 20 10 20 FREQUENCY (GHz) 40 30 +25 C +85 C -55 C 20 10 30 Input Third Order Intercept Point @-3V (Low Frequency Detail) IP3 (dBm) IP3 (dBm) 30 SWITCHES - CHIP Input Third Order Intercept Point @-3V 50 IP3 (dBm) IP3 (dBm) Input Third Order Intercept Point @-5V 10 0 0.1 1 FREQUENCY (GHz) 10 100 Absolute Maximum Ratings 0 0.1 1 FREQUENCY (GHz) 10 100 Control Voltages RF Input Power (0.1 - 0.5 GHz) +5 dBm State Bias Condition RF Input Power (0.5 - 2 GHz) +18 dBm Low 0 to -0.2V @ 1 uA Typ. RF Input Power (2 - 50 GHz) +25 dBm High -3V to -5V @ 10 uA Typ. Control Voltage Range (V1, V2) +0.5 V to -5.5 V Hot Switch Power Level (0.1 - 0.5 GHz) +3 dBm Hot Switch Power Level (0.5 - 2 GHz) +16 dBm Hot Switch Power Level (2 - 50 GHz) +23 dBm Channel Temperature 150 °C Continuous Pdiss (T=85°C) (derate 4.0 mW/°C above 85°C) 0.26 W Thermal Resistance (channel to die bottom) 250 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Truth Table V1 V2 State High Low RFC to RF1 Low High RFC to RF2 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC986 v01.0212 GaAs MMIC REFLECTIVE SPDT SWITCH, 0.1 - 50 GHz SWITCHES - CHIP Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. BACKSIDE METALIZATION: GOLD 4. BACKSIDE METAL IS GROUND 5. BOND PAD METALIZATION: GOLD 6. OVERALL DIE SIZE ±.002” Die Packaging Information [1] Die Pad Dimensions Standard Alternate Pad Number Size WP-13 (Waffle Pack) [2] 2, 5, 8 .004” x .004” 1, 3, 4, 6, 7, 9, 10, 11, 12, 13 .003” x .003” [1] Refer to the “Packaging Information” section of the Hittite website for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC986 v01.0212 GaAs MMIC REFLECTIVE SPDT SWITCH, 0.1 - 50 GHz Pad Descriptions Function Description 2, 5, 8 RF1, RFC, RF2 These pads are DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. 11 V2 12 V1 1, 3, 4, 6, 7, 9 RF Signal Grounds These pads are connected to die backside ground and can be utilized to realize Ground-Signal-Ground interface for optimum RF performance. HMC986 datasheet performance was measured with Ground-Signal-Ground interface on RF1, RFC, and RF2. 10, 13 Control Signal Ground Returns These pads are connected to die backside ground and are optional for use as V1, V2 control signal ground return. Interface Schematic See truth table and control voltage table. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] SWITCHES - CHIP Pad Number 6 HMC986 v01.0212 GaAs MMIC REFLECTIVE SPDT SWITCH, 0.1 - 50 GHz SWITCHES - CHIP Assembly Diagram 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC986 v01.0212 GaAs MMIC REFLECTIVE SPDT SWITCH, 0.1 - 50 GHz The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Figure 1. SWITCHES - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. RF Ground Plane 0.150mm (0.005”) Thick Moly Tab Mounting 0.254mm (0.010”) Thick Alumina Thin Film Substrate The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Figure 2. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond (RF and LO ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8