NTSV30100CT D

NTSV30100CT
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.471 V at IF = 5 A
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PIN CONNECTIONS
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
1
2, 4
3
4
Typical Applications
• Switching Power Supplies including Notebook/Netbook Adapters,
•
•
•
•
1
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing Diodes
Reverse Battery Protection
Instrumentation
2
3
TO−220
CASE 221A
STYLE 6
MARKING DIAGRAM
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
AY WW
TSV30100Cx
AKA
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
A
Y
WW
AKA
x
G
H
= Assembly Location
= Year
= Work Week
= Polarity Designator
= G or H
= Pb−Free Package
= Halide−Free Package
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 1
1
Device
Package
NTSV30100CTG
TO−220
(Pb−Free)
Shipping
50 Units / Rail
Publication Order Number:
NTSV30100CT/D
NTSV30100CT
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR, TC = 115°C)
Per Device
Per Diode
IF(AV)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 110°C)
Per Device
Per Diode
IFRM
Non-repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
A
30
15
A
60
30
A
100
Operating Junction Temperature
TJ
−40 to +150
°C
Storage Temperature
Tstg
−40 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
RqJC
RqJA
2.0
70
Unit
°C/W
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 7.5 A, TJ = 25°C)
(IF = 15 A, TJ = 25°C)
Typ
Max
0.509
0.575
0.751
−
−
1.05
0.471
0.539
0.662
−
−
0.82
vF
(IF = 5 A, TJ = 125°C)
(IF = 7.5 A, TJ = 125°C)
(IF = 15 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(VR = 70 V, TJ = 25°C)
(VR = 70 V, TJ = 125°C)
V
IR
mA
mA
11.2
7.9
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
Unit
63
19.1
500
35
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
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2
NTSV30100CT
TYPICAL CHARACTERISTICS
100
TA = 150°C
IR, INSTANTANEOUS REVERSE
CURRENT (mA)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 25°C
10
TA = 125°C
1
TA = 125°C
1
0.1
TA = 25°C
0.001
0
0.2
0.4
0.8
0.6
1.0
1.2
1.4
1.6
20
1.8
30
40
50
60
70
80
90
100
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Typical Reverse Characteristics
10,000
30
RqJC = 1.3°C/W
TJ = 25°C
IF(AV), AVERAGE FORWARD
CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
10
0.01
0.1
1000
100
25
dc
20
Square Wave
15
10
5
0
10
0.1
1
10
0
100
20
40
60
80
100
120
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 3. Typical Junction Capacitance
Figure 4. Current Derating per Leg
60
55
50
30
RqJC = 1.3°C/W
dc
45
40
Square Wave
35
30
25
20
15
10
5
0
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
TA = 150°C
IPK/IAV = IPK/IAV = 10
20
25
140
IPK/IAV = 5
Square Wave
20
15
dc
10
5
TJ = 150°C
0
0
20
40
60
80
100
120
0
140
2
4
6
8
10
12
14
16
18
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
20
NTSV30100CT
TYPICAL CHARACTERISTICS
R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W)
10
1 50%
20%
10%
P(pk)
0.1 5%
t1
2%
1%
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 7. Typical Transient Thermal Response
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4
10
100
1000
NTSV30100CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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NTSV30100CT/D