NTSV3080CT Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.471 V at IF = 5 A http://onsemi.com Features PIN CONNECTIONS • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • 1 Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2, 4 3 4 TO−220AB CASE 221A STYLE 6 Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • 1 ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation 2 3 MARKING DIAGRAM Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal • AY WW TSV3080CG AKA Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec A Y WW AKA G = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Package/Halide Free ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2012 June, 2012 − Rev. 0 1 Publication Order Number: NTSV3080CT/D NTSV3080CT MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 115°C) Per device Per diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 110°C) Per device Per diode Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Symbol Value Unit VRRM VRWM VR 80 V IF(AV) A 30 15 IFRM A 60 30 IFSM 100 A TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Operating Junction Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient Symbol Value Unit RqJC RqJA 2.0 70 °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 7.5 A, TJ = 25°C) (IF = 15 A, TJ = 25°C) vF (IF = 5 A, TJ = 125°C) (IF = 7.5 A, TJ = 125°C) (IF = 15 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR Typ Max 0.509 0.575 0.751 − − 1.05 0.471 0.539 0.662 − − 0.82 30 20 700 35 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% ORDERING INFORMATION Device NTSV3080CTG Package Shipping TO−220AB (Pb−Free/Halide Free) 50 Units / Rail http://onsemi.com 2 Unit V mA mA NTSV3080CT TYPICAL CHARACTERISTICS 100 TA = 150°C IR, INSTANTANEOUS REVERSE CURRENT (mA) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 25°C 10 TA = 125°C 1 0 0.2 0.4 0.8 0.6 1.0 1.2 1.4 1.6 TA = 125°C 1 0.1 0.001 1.8 30 40 50 60 70 80 Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Typical Reverse Characteristics 30 IF(AV), AVERAGE FORWARD CURRENT (A) 1000 100 0.1 1 10 25 20 Square Wave 15 10 5 0 100 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) Figure 3. Typical Junction Capacitance Figure 4. Current Derating per Leg dc 45 40 Square Wave 35 30 25 20 15 20 40 60 80 100 120 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 30 RqJC = 1.3°C/W 0 RqJC = 1.3°C/W dc VR, REVERSE VOLTAGE (V) 60 55 50 10 5 0 20 VR, INSTANTANEOUS REVERSE VOLTAGE (V) TJ = 25°C 10 TA = 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 10,000 C, JUNCTION CAPACITANCE (pF) 10 0.01 0.1 IF(AV), AVERAGE FORWARD CURRENT (A) TA = 150°C 25 IPK/IAV = 5 Square Wave 20 15 dc 10 5 0 140 IPK/IAV = IPK/IAV = 10 20 140 TJ = 150°C 0 2 4 6 8 10 12 14 16 18 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 20 NTSV3080CT TYPICAL CHARACTERISTICS R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% 20% 10% P(pk) 0.1 5% 0.01 t1 2% 1% 0.000001 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (sec) Figure 7. Typical Transient Thermal Response http://onsemi.com 4 10 100 1000 NTSV3080CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AG −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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