NTSV20100CT D

NTSV20100CT
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.50 V at IF = 5 A
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Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
PIN CONNECTIONS
1
2, 4
3
4
Typical Applications
• Switching Power Supplies including Notebook/Netbook Adapters,
•
•
•
•
1
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing Diodes
Reverse Battery Protection
Instrumentation
2
3
TO−220
CASE 221A
STYLE 6
MARKING DIAGRAM
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Maximum for
AY WW
TSV20100Cx
AKA
10 sec
A
Y
WW
AKA
x
G
H
= Assembly Location
= Year
= Work Week
= Polarity Designator
= G or H
= Pb−Free Package
= Halide−Free Package
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 1
1
Device
Package
NTSV20100CTG
TO−220
(Pb−Free)
Shipping
50 Units / Rail
Publication Order Number:
NTSV20100CT/D
NTSV20100CT
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR, TC = 130°C)
Per device
Per diode
IF(AV)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 125°C)
Per device
Per diode
IFRM
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
A
20
10
A
40
20
A
100
Operating Junction Temperature
TJ
−40 to +150
°C
Storage Temperature
Tstg
−40 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
RqJC
RqJA
2.0
70
Unit
°C/W
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
Typ
Max
0.55
0.65
−
0.98
0.50
0.58
−
0.82
17
5.3
−
−
mA
mA
−
12
800
25
mA
mA
vF
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(VR = 70 V, TJ = 25°C)
(VR = 70 V, TJ = 125°C)
V
IR
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
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2
NTSV20100CT
100
100
TA = 150°C
TA = 150°C
TA = 25°C
I R , REVERSE CURRENT (mA)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL CHARACTERISITICS
10
TA = 125°C
1.0
0.1
10
TA = 125°C
1.0
0.1
TA = 25°C
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
20
CJ, JUNCTION CAPACITANCE (pF)
10000
TJ = 25°C
1000
100
10
0.1
90
100
1
10
VR, REVERSE VOLTAGE (VOLTS)
100
20
RqJC = 1.3°C/W
dc
15
10
SQUARE WAVE
5
0
0
Figure 3. Typical Junction Capacitance
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
Figure 4. Current Derating per Leg
20
40
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
50
70
40
60
80
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 1. Typical Forward Voltage
30
RqJC = 1.3°C/W
35
dc
30
25
20
SQUARE WAVE
15
10
5
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
IPK/IAV = 5
16
IPK/IAV = 20
14
SQUARE
WAVE
12
10
dc
8
6
4
2
0
0
IPK/IAV = 10
18
TA = 150°C
0
4
8
12
16
20
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
24
NTSV20100CT
TYPICAL CHARACTERISITICS
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
10
1
50% Duty Cycle
20%
10%
0.1 5%
2%
1%
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
Figure 7. Typical Transient Thermal Response, Junction−to−Case
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4
100
1000
NTSV20100CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
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NTSV20100CT/D