NTSV2080CT Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.50 V at IF = 5 A http://onsemi.com Features PIN CONNECTIONS • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • 1 Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2, 4 3 4 TO−220AB CASE 221A STYLE 6 Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • 1 ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation 2 3 MARKING DIAGRAMS Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec AY WW TSV2080CG AKA A Y WW AKA G = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Package/Halide Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2012 June, 2012 − Rev. 0 1 Publication Order Number: NTSV2080CT/D NTSV2080CT MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 130°C) Per device Per diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 125°C) Per device Per diode Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Symbol Value Unit VRRM VRWM VR 80 V IF(AV) A 20 10 IFRM A 40 20 IFSM 100 A TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Operating Junction Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient Symbol Value Unit RqJC RqJA 2.0 70 °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 10 A, TJ = 25°C) vF (IF = 5 A, TJ = 125°C) (IF = 10 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR Typ Max 0.55 0.65 − 0.98 0.50 0.58 − 0.82 20 10 600 20 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% ORDERING INFORMATION Device NTSV2080CTG Package Shipping TO−220AB (Pb−Free/Halide Free) 50 Units / Rail http://onsemi.com 2 Unit V mA mA NTSV2080CT 100 100 TA = 150°C TA = 150°C TA = 25°C I R , REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISITICS 10 TA = 125°C 1.0 0.1 10 TA = 125°C 1.0 0.1 0.01 TA = 25°C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 20 CJ, JUNCTION CAPACITANCE (pF) 10000 TJ = 25°C 1000 100 10 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 RqJC = 1.3°C/W dc 15 10 SQUARE WAVE 5 0 0 dc 25 SQUARE WAVE 15 10 5 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) 20 RqJC = 1.3°C/W 30 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 Figure 4. Current Derating per Leg 40 20 80 20 Figure 3. Typical Junction Capacitance 35 50 70 40 60 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current IF(AV), AVERAGE FORWARD CURRENT (A) Figure 1. Typical Forward Voltage 30 16 IPK/IAV = 5 IPK/IAV = 20 14 SQUARE WAVE 12 10 dc 8 6 4 2 0 140 IPK/IAV = 10 18 TA = 150°C 0 4 8 12 16 20 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 24 NTSV2080CT TYPICAL CHARACTERISITICS R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% Duty Cycle 20% 10% 0.1 5% 2% 1% Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 Figure 7. Typical Transient Thermal Response, Junction−to−Case http://onsemi.com 4 100 1000 NTSV2080CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AG −T− B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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