ONSEMI NTP5864NG

NTP5864N
Power MOSFET
60 V, 63 A, 12.4 mW
Features
•
•
•
•
Low RDS(on)
High Current Capability
Avalanche Energy Specified
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
ID MAX
(Note 1)
60 V
12.4 mΩ @ 10 V
63 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Gate−to−Source Voltage −
Non−Repetitive (tp = 10 s)
VGS
±30
V
ID
63
A
Continuous Drain
Current − RJC (Note 1)
Power Dissipation −
RJC (Note 1)
Steady
State
TC = 25°C
TC = 100°C
107
IDM
252
A
TJ,
TSTG
−55 to
175
°C
IS
63
A
Single Pulse Drain−to Source Avalanche
Energy − (L = 0.1 mH)
EAS
80
mJ
IAS
40
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Pulsed Drain Current
TC = 25°C
TC = 100°C
tp = 10 s
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
G
S
W
54
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
D
45
PD
Steady
State
N−Channel
Symbol
Max
Units
Junction−to−Case (Drain) − Steady State
(Note 1)
RθJC
1.4
°C/W
Junction−to−Ambient − Steady State (Note 1)
RθJA
33
°C/W
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
MARKING DIAGRAM
& PIN ASSIGNMENT
TO−220AB
CASE 221A
STYLE 5
1
2
3
A
Y
WW
G
June, 2011 − Rev. 0
NTP5864NG
AYWW
1
Gate
= Assembly Location
= Year
= Work Week
= Pb−Free Package
3
Source
2
Drain
ORDERING INFORMATION
Device
NTP5864NG
© Semiconductor Components Industries, LLC, 2011
4
Drain
4
1
Package
Shipping
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
NTP5864N/D
NTP5864N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 A
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
V
58
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 60 V
TJ = 25°C
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 A
mV/°C
1.0
A
±100
nA
4.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
2.0
−10
mV/°C
RDS(on)
VGS = 10 V, ID = 20 A
10.2
12.4
gFS
VDS = 15 V, ID = 20 A
10
S
1680
pF
m
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
189
124
nC
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
10
Rg
0.5
10
ns
Gate Resistance
31
VGS = 10 V, VDS = 48 V,
ID = 20 A
2.0
7.3
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
VGS = 10 V, VDD = 48 V,
ID = 20 A, RG = 2.5 tf
6.4
18
4.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.94
TJ = 125°C
0.84
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 40 A
24
VGS = 0 V, dISD/dt = 100 A/s,
IS = 20 A
QRR
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2
V
ns
16
7.9
20
2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NTP5864N
TYPICAL CHARACTERISTICS
125
VGS = 10 V
7.5 V
TJ = 25°C
VDS ≥ 10 V
7V
100
6.5 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
125
5.5 V
75
5.0 V
50
4.5 V
25
100
75
50
TJ = 25°C
25
TJ = 125°C
0
1
2
3
4
0
5
2
4
3
5
6
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.030
ID = 20 A
TJ = 25°C
0.025
0.020
0.015
7
0.0115
VGS = 10 V
TJ = 25°C
0.0110
0.0105
0.010
0.0100
0.005
0.000
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.0095
10
20
25
30
35
40
45
50
55
60
Figure 4. On−Resistance vs. Drain Current
100000
2.2
2.0
15
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
ID = 20 A
VGS = 10 V
VGS = 0 V
1.8
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
0
10000
1.6
1.4
1.2
1.0
TJ = 150°C
TJ = 125°C
1000
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
100
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NTP5864N
TYPICAL CHARACTERISTICS
10
VGS = 0 V
TJ = 25°C
2000
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
2500
Ciss
1500
1000
500
Coss
0
0
Crss
10
20
30
40
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
60
QT
8
6
Qgs
4
2
0
ID = 20 A
TJ = 25°C
0
5
10
15
20
25
30
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
VDD = 48 V
ID = 20 A
VGS = 10 V
IS, SOURCE CURRENT (A)
td(off)
td(on)
10
VGS = 0 V
TJ = 25°C
90
100
t, TIME (ns)
Qgd
tr
tf
80
70
60
50
40
30
20
10
1
1
10
100
0.60
0.70
0.80
0.90
1.00
1.10 1.20
RG, GATE RESISTANCE ()
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
80
100 s
1 ms
10 ms
dc
100
10 s
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
0.50
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
10
VGS = 10 V
SINGLE PULSE
TC = 25°C
1
0.1
0
0.40
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID = 40 A
70
60
50
40
30
20
10
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
175
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTP5864N
TYPICAL CHARACTERISTICS
RJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
0.1
1
10
NTP5864N
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
DRAIN
SOURCE
DRAIN
ON Semiconductor and
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NTP5864N/D