Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC560 v02.0312 Mixers - Double Balanced - CHIP GaAs MMIC FUNDAMENTAL MIXER, 24 - 40 GHz Typical Applications Features The HMC560 is ideal for: Wide IF Bandwidth: DC - 18 GHz • Test Equipment & Sensors Input IP3: +21 dBm • Microwave Point-to-Point Radios High LO/RF Isolation: 35 dB • Point-to-Multi-Point Radios Passive Double Balanced Topology • Military & Space Compact Size: 1.15 x 0.78 x 0.1 mm Functional Diagram General Description The HMC560 chip is a miniature passive double balanced mixer which is fabricated in a GaAs MESFET process, and can be used as an upconverter or downconverter from 24-40 GHz in a small chip area. The wide bandwidth allows this device to be used across multiple radio bands with a common platform. Excellent isolations are provided by on-chip baluns, and the chip requires no external components and no DC bias. Measurements were made with the chip mounted and ribbon bonded into in a 50-ohm microstrip test fixture. Measured data includes the parasitic effects of the assembly. RF connections to the chip were made with 0.076mm (3-mil) ribbon bond with minimal length <0.31mm (<12 mil). Electrical Specifications, TA = +25° C, IF = 1GHz, LO = +13 dBm* Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range, RF & LO 24 - 36 36 - 40 GHz Frequency Range, IF DC - 18 DC - 18 GHz Conversion Loss Noise Figure (SSB) 8 10 8 10 LO to RF Isolation 27 35 20 LO to IF Isolation 29 32 18 RF to IF Isolation 17 22 21 10 13 dB 10 13 dB 35 dB 33 dB dB IP3 (Input) 19 21 dBm IP2 (Input) 50 50 dBm 1 dB Compression (Input) 13 15 dBm * Unless otherwise noted, all measurements performed as downconverter 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC560 v02.0312 GaAs MMIC FUNDAMENTAL MIXER, 24 - 40 GHz Conversion Gain vs. Temperature @ LO = +13 dBm Isolation @ LO = +13 dBm ISOLATION (dB) CONVERSION GAIN (dB) LO/RF RF/IF LO/IF -10 -5 -10 +25 C +85 C -55 C -15 -20 -30 -40 -50 -20 24 26 28 30 32 34 36 38 40 42 24 44 26 28 30 0 -5 -5 -10 +7 dBm +9 dBm +11 dBm +13 dBm +15 dBm 36 38 40 -10 -15 Conversion Gain IF Return Loss -20 -20 24 26 28 30 32 34 36 38 40 42 44 0 2 4 6 RF FREQUENCY (GHz) 8 10 12 14 16 18 20 FREQUENCY (GHz) Upconverter Performance Conversion Gain @ LO = +13 dBm Return Loss @ LO = +13 dBm 0 0 -5 -5 RETURN LOSS (dB) CONVERSION GAIN (dB) 34 IF Bandwidth @ LO = +13 dBm 0 RESPONSE (dB) CONVERSION GAIN (dB) Conversion Gain vs. LO Drive -15 32 FREQUENCY (GHz) RF FREQUENCY (GHz) Mixers - Double Balanced - CHIP 0 0 -10 -15 -10 -15 RF LO -20 -20 -25 24 26 28 30 32 34 36 RF FREQUENCY (GHz) 38 40 42 24 26 28 30 32 34 36 38 40 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC560 v02.0312 GaAs MMIC FUNDAMENTAL MIXER, 24 - 40 GHz Input IP3 vs. Temperature @ LO = +13 dBm * 25 20 20 IIP3 (dBm) IIP3 (dBm) 25 15 10 +9 dBm +11 dBm +13 dBm +15 dBm 5 15 10 +25 C +85 C -55 C 5 0 0 24 26 28 30 32 34 36 38 40 24 26 28 RF FREQUENCY (GHz) 70 70 60 60 50 50 IIP2 (dBm) 80 40 30 36 38 40 36 38 40 36 38 40 30 +25 C +85 C -55 C 10 0 0 24 26 28 30 32 34 36 38 40 24 26 28 RF FREQUENCY (GHz) 30 32 34 RF FREQUENCY (GHz) Upconverter Performance Input IP3 @ LO = +13 dBm Input P1dB vs. Temperature @ LO = +13 dBm 25 20 20 15 P1dB (dBm) IIP3 (dBm) 34 40 20 +9 dBm +11 dBm +13 dBm +15 dBm 10 32 Input IP2 vs. Temperature @ LO = +13 dBm * 80 20 30 RF FREQUENCY (GHz) Input IP2 vs. LO Drive * IIP2 (dBm) Mixers - Double Balanced - CHIP Input IP3 vs. LO Drive * 15 10 10 +25 C +85 C -55 C 5 5 0 0 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) 24 26 28 30 32 34 RF FREQUENCY (GHz) * Two-tone input power = -10 dBm each tone, 1 MHz spacing. 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC560 v02.0312 GaAs MMIC FUNDAMENTAL MIXER, 24 - 40 GHz MxN Spurious Outputs as a Down Converter Absolute Maximum Ratings +25 dBm LO Drive +23 dBm IF DC Current Channel Temperature nLO mRF 0 1 2 ±2 mA 0 xx -9 -13 150 °C/W 1 -10 0 -40 2 -68 -55 -55 -66 -82 -84 -66 Continuous Pdiss (T= 85 °C ) (derate 14.79 mW/ °C above 85 °C) 0.961 W Thermal Resistance (RTH) (channel to die bottom) 67.6 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C 3 3 RF = 24 GHz @ -10 dBm LO = 25 GHz @ +13 dBm All values in dBc below IF output power level. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Mixers - Double Balanced - CHIP RF / IF Input NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004”. Die Packaging Information [1] 3. TYPICAL BOND PAD IS .004” SQUARE. 4. BACKSIDE METALLIZATION: GOLD. Standard Alternate WP-13 (Waffle Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. THIS DIE IS DESIGNED FOR PICK-UP WITH VACUUM (EDGE) COLLET TOOLS. TO PRECLUDE THE RISK OF PERMANENT DAMAGE, NO CONTACT TO THE DIE SURFACE IS ALLOWED WITHIN THIS RECTANGULAR AREA. 9. Overall die size is ±0.002” For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC560 v02.0312 GaAs MMIC FUNDAMENTAL MIXER, 24 - 40 GHz Mixers - Double Balanced - CHIP Pad Descriptions 5 Pad Number Function Description 1 LO This pad is DC coupled and matched to 50 Ohms. 2 RF This pad is DC coupled and matched to 50 Ohms. IF This pad is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pad must not source/sink more than 2mA of current or die non-function and possible die failure will result. GND The backside of the die must be connected to RF/DC ground. 3 Interface Schematic Assembly Drawing For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC560 v02.0312 GaAs MMIC FUNDAMENTAL MIXER, 24 - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC 3 mil Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting Figure 1. 0.102mm (0.004”) Thick GaAs MMIC 3 mil Ribbon Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Mixers - Double Balanced - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6