Si4628DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0030 at VGS = 10 V 38 0.0038 at VGS = 4.5 V 33 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Gen III Power MOSFET and Schottky Diode • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 27.5 nC APPLICATIONS • Notebook CPU Core • Buck Converter SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D Schottky Diode G N-Channel MOSFET Top View S Ordering Information: Si4628DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 30 ± 20 38 30 ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range V 25.4b, c 20b, c 70 IDM Pulsed Drain Current Unit A 7 3.1b, c 45 101 7.8 5 mJ W 3.5b, c 2.2b, c - 55 to 150 TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 °C/W. Document Number: 64811 S09-0871-Rev. A, 18-May-09 Symbol RthJA RthJF Typ. 29 13 Max. 35 16 Unit °C/W www.vishay.com 1 Si4628DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = 1 mA 30 VGS(th) VDS = VGS, ID= 1 mA 1.0 IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On -State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea 2.5 ± 100 VDS = 30 V, VGS = 0 V 0.10 0.25 VDS = 30 V, VGS = 0 V, TJ = 100 °C 7.5 70 VGS = 10 V, ID = 20 A 0.0024 0.0030 VGS = 4.5 V, ID = 15 A 0.0030 0.0038 VDS = 15 V, ID = 20 A 73 VDS ≥ 5 V, VGS = 10 V RDS(on) gfs 40 V nA mA A Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3450 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A f = 1 MHz td(on) Turn-On Delay Time VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 0.4 1.7 3.4 28 55 20 40 39 75 26 td(on) 12 24 10 20 36 70 9 18 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 8.3 13 td(off) Turn-Off Delay Time 87 42 tf tr Rise Time 58 27.5 nC 7.5 Rg Gate Resistance pF 810 260 Ω ns Drain-Source Body Diode and Schottky Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 7 70 IS = 2 A IF = 13 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.44 0.53 V 28 55 ns 21 42 nC 15 13 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 64811 S09-0871-Rev. A, 18-May-09 Si4628DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 70 VGS = 10 V thru 3 V 4 I D - Drain Current (A) I D - Drain Current (A) 56 42 28 3 2 TC = 25 °C 1 14 TC = 125 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 TC = - 55 °C 0 0.0 2.5 0.6 VDS - Drain-to-Source Voltage (V) 1.8 2.4 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0035 4500 0.0032 3600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.2 VGS = 4.5 V 0.0029 0.0026 VGS = 10 V Ciss 2700 1800 Coss 0.0023 900 0.0020 0 Crss 0 14 28 42 56 70 0 6 12 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.6 10 ID = 20 A ID = 20 A 1.4 VDS = 15 V 6 VDS = 10 V 4 VDS = 20 V (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 VGS = 10 V 1.2 VGS = 4.5 V 1.0 0.8 2 0 0 12 24 36 48 60 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 64811 S09-0871-Rev. A, 18-May-09 150 www.vishay.com 3 Si4628DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.015 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 20 A TJ = 150 °C 10 TJ = 25 °C 1 0.012 0.009 0.006 TJ = 125 °C 0.003 TJ = 25 °C 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1 2 VSD - Source-to-Drain Voltage (V) 4 5 6 7 8 9 10 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 10-1 200 30 V 10-2 160 20 V 10-3 10-4 Power (W) I R - Reverse (A) 3 VGS - Gate-to-Source Voltage (V) 10 V 120 80 10-5 40 10-6 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Reverse Current (Schottky) Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 64811 S09-0871-Rev. A, 18-May-09 Si4628DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 45 I D - Drain Current (A) 36 27 18 9 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 10 2.0 8 1.6 Power (W) Power (W) Current Derating* 6 4 2 1.2 0.8 0.4 0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64811 S09-0871-Rev. A, 18-May-09 www.vishay.com 5 Si4628DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM -- TA = PDMZthJA(t) Single Pulse 0.01 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot ’Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64811. www.vishay.com 6 Document Number: 64811 S09-0871-Rev. A, 18-May-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000