27C010T 1 Megabit (128K x 8-Bit) OTP EPROM A5 VPP 1 32 VCC A9 A16 PGM A15 NC A12 A12 A14 A16 A7 A13 I/O0 A6 A8 I/O7 A5 A9 27C010T A4 A3 1024 x 1024 Memory Matrix X-Decoder Input Data Control Y-Gating Y-Decoder A11 OE A2 A10 A1 CE A0 I/O7 I/O0 I/O6 CE OE A0-A4 A10-A11 PGM I/O5 I/O2 I/O4 VCC VPP VSS 16 17 H : High Threshold Inverter Memory I/O1 H VSS Logic Diagram I/O3 FEATURES: DESCRIPTION: • 128k x 8 Bit OTP EPROM organization • RAD-PAK® radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si), depending upon space mission • Excellent Single Event Effects: - SELTH LET: > 80 MeV/mg/cm2 - SEUTH LET (read mode): >80 Mev/mg/cm2 • Package: - 32 pin RAD-PAK® flat pack - Weight - 6.0 grams • Fast access time: - 120, 150, 200 ns (max) times available • Low power consumption: - Active mode: 50 mW/MHz (typ) - Standby mode: 5µW (typ) • High speed page and word programming: - Page programming time: 14 sec (typ) • Programming power supply: - VPP = 12.5 V ± 0.3 V • One-time Programmable • Pin Arrangement - JEDEC standard byte-wide EPROM - Flash memory and mask ROM compatible Maxwell Technologies’ 27C010T high density 1 Megabit One-time Programmable Electrically Programmable Read Only Memory microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 27C010T features fast address times and low power dissipation. The 27C010T offers high speed programming using page programming mode. The 27C010T is offered in JEDEC-Standard Byte-Wide EPROM pinouts, which allows socket replacement with Flash Memory and Mask ROMs. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S. 12.12.01 Rev 2 (858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com All data sheets are subject to change without notice 1 ©2001 Maxwell Technologies All rights reserved. 27C010T 1 Megabit (128K x 8-Bit) - OTP EPROM TABLE 1. 27C010T PINOUT DESCRIPTION PIN SYMBOL 12-5, 27, 26, 23, 25, 4, 28, 29, 3 ,2 A0 - A16 DESCRIPTION Address I/O0 - I/O7 Input/Output 22 CE Chip Enable 24 OE Output Enable 32 VCC Power Supply 1 VPP Programming Supply 16 VSS Ground 31 PGM Programming Enable 30 NC No Connection Memory TABLE 2. 27C010T ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MIN MAX UNIT Supply Voltage 1 VCC -0.6 7.0 V Programming Voltage 1 VPP -0.6 13.5 V VIN, VOUT -0.6 7.0 V A9 Voltage 2 VID -0.6 13.0 V Operating Temperature Range TA -55 +125 °C Storage Temperature Range TS -65 +150 °C All Input and Output Voltage 1,2 1. Relative to VSS. 2. VIN, VOUT, and VID min = -1.0V for pulse width < 20 ns. TABLE 3. DELTA LIMITS PARAMETER VARIATION ICC1 ±10% of value specified on Table 6 ICC2 ±10% of value specified on Table 6 ICC3 ±10% of value specified on Table 6 ISB ±10% of value specified on Table 6 12.12.01 Rev 2 All data sheets are subject to change without notice 2 ©2001 Maxwell Technologies All rights reserved. 27C010T 1 Megabit (128K x 8-Bit) - OTP EPROM TABLE 4. 27C010T RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN MAX UNITS Supply Voltage VCC 4.5 5.5 V Input Voltage VIL -0.31 0.8 V VIH 2.2 ΘJC VCC +12 -- 1.27 °C/W TA -55 +125 °C SYMBOL MIN MAX UNIT CIN -- 10 pF COUT -- 15 pF Thermal Impedance Operating Temperature Range 1. VIL min = -1.0V for pulse width < 50 ns. 2. VIH max = VCC + 1.5V for pulse width < 20 ns. TABLE 5. 27C010T CAPACITANCE 1 PARAMETER Output Capacitance Memory Input Capacitance 1. Guaranteed by design. TABLE 6. 27C010T DC ELECTRICAL CHARACTERISTICS FOR READ OPERATION (VCC = 5V ± 10%, VPP = VSS, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL TEST CONDITION SUB GROUPS MIN TYP MIN UNIT Input Leakage Current ILI VIN = 5.5V 1, 2, 3 -- -- 2 µA Output Leakage Current ILO VOUT = 5.5V/0.45V 1, 2, 3 -- -- 2 µA Standby VCC Current ISB CE = VIH 1, 2, 3 -- -- 1 mA Operating VCC Current ICC1 IOUT = 0 mA, CE = VIL 1, 2, 3 -- -- 30 mA ICC2 IOUT = 0 mA, f = 5 MHz 1, 2, 3 -- -- 30 ICC3 IOUT = 0 mA, f = 10 MHz 1, 2, 3 -- -- 50 VPP Current IPP1 VPP = 5.5V 1, 2, 3 -- 1 20 µA Input Voltage VIH 1, 2, 3 2.2 -- -- V VIL 1, 2, 3 -- -- 0.8 Output Voltage VOH IOH = -400 µA 1, 2, 3 2.4 -- -- VOL IOL = 2.1 mA 1, 2, 3 -- -- 0.45 12.12.01 Rev 2 V All data sheets are subject to change without notice 3 ©2001 Maxwell Technologies All rights reserved. 27C010T 1 Megabit (128K x 8-Bit) - OTP EPROM TABLE 7. 27C010T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1 (VCC = 5V ± 10%, VPP = VSS, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED) PARAMETER TEST CONDITION SYMBOL SUB GROUPS CE = OE = VIL tACC 9, 10, 11 Chip Enable Access Time - 120 - 150 - 200 OE = VIL tCE 9, 10, 11 Output Enable Access TIme - 120 - 150 - 200 CE = VIL tOE 9, 10, 11 Output Hold to Address Change - 120 - 150 - 200 CE = VIL tOH 9, 10, 11 Output Disable to High-Z 2 - 120 - 150 - 200 CE = OE = VIL tDF 9, 10, 11 MAX ---- 120 150 200 ---- 120 150 200 ---- 60 70 70 0 0 0 ---- 0 0 0 50 50 50 UNIT ns ns ns ns Memory Address Access Time - 120 - 150 - 200 MIN ns 1. Test conditions: - Input pulse levels 0.45V/2.4V - Input rise and fall times < 10 ns - Output load 1 TTL gate + 100 pF (including scope and jig) - Referenced levels for measuring timing 0.8V/2.0V 2. tDF is defined as the time at which the output becomes an open circuit and data is no longer driven. 12.12.01 Rev 2 All data sheets are subject to change without notice 4 ©2001 Maxwell Technologies All rights reserved. 27C010T 1 Megabit (128K x 8-Bit) - OTP EPROM TABLE 8. 27C010T DC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2,3,4 (VCC = 6.25V + 0.25V, VPP = 12.5V + 0.3V, TA = 25°C) PARAMETER SYMBOL TEST CONDITION MIN MAX UNIT 1, 2, 3 -- 2 µA 1, 2, 3 -- 30 mA 1, 2, 3 -- 40 mA V Input Leakage Current ILI Operating VCC Current ICC Operating VPP Current IPP Input Voltage 5 VIH 1, 2, 3 2.2 VCC +5 6 VIL 1, 2, 3 -0.1 7 0.8 Output Voltage VIN = 0V to VCC SUB GROUPS CE = PGM = VIL VOH IOH = -400 µA 1, 2, 3 2.4 -- VOL IOH = 2.1 mA 1, 2, 3 -- 0.45 V 1. VCC must be applied before VPP and removed after VPP. 2. VPP must not exceed 13V, inlcuding overshoot. 3. Do not change VPP from VIL to 12.5V or 12.5V to VIL when CE =LOW. Memory 4. DC electrical paramters for programming operations are not tested. These parameters are guaranteed by design. 5. Device reliability may be adversely affected if the device is installed or removed while VPP = 12.5V. 6. If VIH is over the specified maximum value, programming operation can not be guaranteed. 7. VIL min = -0.6V for pulse width < 20 ns. TABLE 9. 27C010T AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2 (VCC = 6.25V + 0.25V, VPP = 12.5V ± 0.3V, TA = 25°C) PARAMETER SYMBOL SUB GROUPS MIN TYP MAX UNIT Address Setup Time tAS 9, 10, 11 2 -- -- µs Address Hold Time tAH 9, 10, 11 0 -- -- µs Data Setup Time tDS 9, 10, 11 2 -- -- µs Data Hold Time tDH 9, 10, 11 2 -- -- µs Chip Enable Setup TIme tCES 9, 10, 11 2 -- -- µs VPP Setup Time tVPS 9, 10, 11 2 -- -- µs VCC Setup Time tVCS 9, 10, 11 2 -- -- µs Output Enable Setup Time tOES 9, 10, 11 2 -- -- µs Output Disable Time tDF 9, 10, 11 0 -- 130 ns PGM Initial Programming Pulse Width tPW 9, 10, 11 0.19 0.20 0.21 ms PGM Overprogramming Pulse Width tOPW 9, 10, 11 0.19 -- 5.25 ms Data Valid from Output Enable Time tOE 9, 10, 11 0 -- 150 ns Output Enable Pulse During Data Latch tLW 9, 10, 11 1 -- -- µs Output Enable Hold Time tOEH 9, 10, 11 2 -- -- µs Chip Enable Hold Time tCEH 9, 10, 11 2 -- -- µs 12.12.01 Rev 2 All data sheets are subject to change without notice 5 ©2001 Maxwell Technologies All rights reserved. 27C010T 1 Megabit (128K x 8-Bit) - OTP EPROM TABLE 9. 27C010T AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS 1,2 (VCC = 6.25V + 0.25V, VPP = 12.5V ± 0.3V, TA = 25°C) PARAMETER PGM Setup TIme SYMBOL SUB GROUPS MIN TYP MAX UNIT tPGMS 9, 10, 11 2 -- -- µs 1. Test conditions: - Input pulse levels 0.45V / 2.4V - Input rise and fall times < 20 ns - Referenced levels for measuring timing 0.8V/2.0V 2. AC electrical parameters for programming operation are not tested. These are guaranteed by design. TABLE 10. 27C010T MODE SELECTION 1,2 MODE VCC CE OE PGM A0 I/O READ VCC VCC VIL VIL VPP X DOUT OUTPUT DISABLE VCC VCC VIL VIH VIH X High-Z STANDBY VCC VCC VIH X X X High-Z PROGRAM VPP VCC VIL VIN VIL X DIN PROGRAM VERIFY VPP VSS VIL VIL VIH X DOUT PAGE DATA LATCH VPP VCC VIH VIL VIH X DIN PAGE PROGRAM VPP VCC VIH VIH VIL X High-Z PROGRAM INHIBIT VCC VCC VIL VIL VIL X High-Z VPP VCC VIL VIH VIH X High-Z VPP VCC VIH VIL VIL X High-Z VPP VCC VIH VIH VIH X High-Z VCC VCC VIL VIL VIH VIH ID IDENTIFIER Memory VPP 1. X = Don’t care. 2. 11.5V < VH < 12.5V. 12.12.01 Rev 2 All data sheets are subject to change without notice 6 ©2001 Maxwell Technologies All rights reserved. 27C010T 1 Megabit (128K x 8-Bit) - OTP EPROM FIGURE 1. READ TIMING WAVEFORM Memory FIGURE 1. 12.12.01 Rev 2 All data sheets are subject to change without notice 7 ©2001 Maxwell Technologies All rights reserved. 27C010T 1 Megabit (128K x 8-Bit) - OTP EPROM FIGURE 2. BYTE PROGRAMMING FLOWCHART Memory 12.12.01 Rev 2 All data sheets are subject to change without notice 8 ©2001 Maxwell Technologies All rights reserved. 27C010T 1 Megabit (128K x 8-Bit) - OTP EPROM FIGURE 3. BYTE PROGRAMMING TIMING WAVEFORM Memory 12.12.01 Rev 2 All data sheets are subject to change without notice 9 ©2001 Maxwell Technologies All rights reserved. 27C010T 1 Megabit (128K x 8-Bit) - OTP EPROM FIGURE 4. PAGE PROGRAMMING FLOWCHART Memory 12.12.01 Rev 2 All data sheets are subject to change without notice 10 ©2001 Maxwell Technologies All rights reserved. 27C010T 1 Megabit (128K x 8-Bit) - OTP EPROM FIGURE 5. PAGE PROGRAMMING TIMING WAVEFORM Memory 12.12.01 Rev 2 All data sheets are subject to change without notice 11 ©2001 Maxwell Technologies All rights reserved. 27C010T 1 Megabit (128K x 8-Bit) - OTP EPROM 32LDFP Memory 32 PIN RAD-PAK® FLAT PACKAGE DIMENSION SYMBOL MIN NOM MAX A 0.194 0.207 0.220 b 0.015 0.017 ±.002 0.019 c 0.004 0.005 0.007 D 0.812 0.820 0.828 E 0.474 0.480 0.486 E1 -- -- 0.498 E2 0.304 0.310 0.316 E3 0.030 0.085 -- e 0.050 BSC L 0.370 0.380 0.390 Q 0.067 0.070 0.073 S1 0.005 0.027 -- N 32 F32-09 Note: All dimensions in inches 12.12.01 Rev 2 All data sheets are subject to change without notice 12 ©2001 Maxwell Technologies All rights reserved. 1 Megabit (128K x 8-Bit) - OTP EPROM 27C010T Important Notice: These data sheets are created using the chip manufacturer’s published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. Memory 12.12.01 Rev 2 All data sheets are subject to change without notice 13 ©2001 Maxwell Technologies All rights reserved. 27C010T 1 Megabit (128K x 8-Bit) - OTP EPROM Product Ordering Options Model Number 27C010T XX F X -XX Option Details Feature 12 = 120 ns 15 = 150 ns 20 = 200 ns Screening Flow Monolithic S = Maxwell Class S B = Maxwell Class B E = Engineering (testing @ +25°C) I = Industrial (testing @ -55°C, +25°C, +125°C) Package F = Flat Pack Radiation Feature RP = RAD-PAK® package RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at die level Base Product Nomenclature 1 Megabit (128K x 8-Bit) - OTP EPROM 12.12.01 Rev 2 All data sheets are subject to change without notice Memory Access Time 14 ©2001 Maxwell Technologies All rights reserved.