SiE876DF_RC

SiE876DF_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have been
derived using curve-fitting techniques. R-C values for the
electrical circuit in the Foster/tank and Cauer/filter
configurations are included. When implemented in P-SPICE,
these values have matching characteristic curves to the
single-pulse transient thermal impedance curves for the
MOSFET.
These RC values can be used in the P-SPICE simulation to
evaluate the thermal behavior of the MOSFET junction
temperature under a defined power profile. These
techniques are described in application note AN609,
“Thermal Simulation of Power MOSFETs on the P-SPICE
Platform”.
R-C THERMAL MODEL FOR TANK CONFIGURATION
T (Junction)
RT1
RT2
RT3
RT4
CT1
CT2
CT3
CT4
T (Ambient)
R-C VALUES FOR TANK CONFIGURATION
THERMAL RESISTANCE (°C/W)
Junction to
Ambient
Case-Drain Top
Case-Source
RT1
4.0839
13.1408 m
229.4359 m
RT2
2.8985
487.0575 m
2.4496
RT3
10.5925
322.8526 m
18.9606 m
RT4
50.4251
176.9491 m
2.0035 m
THERMAL CAPACITANCE (Joules/°C)
Junction to
Ambient
Case-Drain Top
CT1
42.8964 m
250.3603 u
Case-Source
1.7816 m
CT2
113.1816 m
31.6765 m
27.4580 m
CT3
191.5102 m
63.7950 m
1.4509
CT4
1.3901
3.3354 m
1.5555 m
Note
N/A indicates not applicable
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
Document Number: 64849
Revision: 09-Apr-09
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SiE876DF_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
T (Junction)
RF2
RF1
CF1
CF2
RF3
RF4
T (Ambient)
CF4
CF3
GND
R-C VALUES FOR FILTER CONFIGURATION
THERMAL RESISTANCE (°C/W)
Junction to
Ambient
Case-Drain Top
Case-Source
RF1
3.7413
270.5949 m
286.8241 m
RF2
12.3473
945.5000 u
1.2831
RF3
28.3916
8.1951 m
1.0331
RF4
23.5198
720.2645 m
96.9759 m
Junction to
Ambient
Case-Drain Top
CF1
17.4636 m
2.7316 m
1.7681 m
CF2
46.2435 m
5.1728 m
25.3698 m
CF3
894.9969 m
13.7470 m
1.9573 m
CF4
1.8159
2.9036 m
135.6344 m
THERMAL CAPACITANCE (Joules/°C)
Case-Source
Note
N/A indicates not applicable
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Document Number: 64849
Revision: 09-Apr-09
SiE876DF_RC
Vishay Siliconix
Document Number: 64849
Revision: 09-Apr-09
www.vishay.com
3
SiE876DF_RC
Vishay Siliconix
www.vishay.com
4
Document Number: 64849
Revision: 09-Apr-09