Si8445DB_RC

Si8445DB_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. R-C
values for the electrical circuit in the Foster/Tank and
Cauer/Filter configurations are included. When
implemented in P-SPICE, these values have matching
characteristic curves to the single-pulse transient
thermal impedance curves for the MOSFET.
These RC values can be used in the P-SPICE
simulation to evaluate the thermal behavior of the
MOSFET junction temperature under a defined power
profile. These techniques are described in Application
Note AN609, "Thermal Simulation of Power MOSFETs
on the P-Spice Platform."
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
Foot
RT1
13.7828
2.4018
N/A
RT2
34.1395
6.8064
N/A
RT3
10.2674
468.2439 m
N/A
RT4
41.8103
1.4250
N/A
Thermal Capacitance (Joules/°C)
Case
Foot
266.3948 u
68.0774 u
N/A
1.1738 m
397.5839 u
N/A
CT3
123.6454 m
111.1075 m
N/A
CT4
1.2506
1.6817 m
N/A
Junction to
Ambient
CT1
CT2
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 68659
Revision: 11-Apr-08
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Si8445DB_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
Foot
RF1
21.3540
3.2599
N/A
RF2
26.9020
7.0261
N/A
RF3
11.5156
487.5123 m
N/A
RF4
40.2284
226.4877 m
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
Foot
CF1
CF2
232.6465 u
55.6486 u
N/A
1.1494 m
261.4637 u
N/A
CF3
98.9079 m
10.6946 m
N/A
CF4
1.1750
802.5108 u
N/A
Note: NA indicates not applicable
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Document Number: 68659
Revision: 11-Apr-08
Si8445DB_RC
Vishay Siliconix
Document Number: 68659
Revision: 11-Apr-08
www.vishay.com
3