PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band. These devices are available in thermally-enhanced packages with eared or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA190451F Package H-37265-2 Features 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 450 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing -25 • Broadband internal matching • Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0% - Intermodulation distortion = –39 dBc - Adjacent channel power = –42 dBc • Typical CW performance, 1960 MHz, 28 V - Output power at P–1dB = 60 W - Efficiency = 60% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power • Pb-free and RoHS compliant 35 Efficiency -30 30 IM3 -35 25 -40 20 -45 15 ACPR -50 Drain Efficiency (%) IM3 (dBc), ACPR (dBc) PTFA190451E Package H-36265-2 10 -55 5 30 32 34 36 38 40 42 Average Output Power (dBm) RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 11 W average ƒ1 = 1955 MHz, ƒ2 = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17.5 — dB Drain Efficiency ηD 27 28 — % Intermodulation Distortion IMD — –39 –37 dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 03.1, 2009-02-20 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 17.5 — dB Drain Efficiency ηD — 38 — % Intermodulation Distortion IMD — –31 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.91 — Ω On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 28 V, IDQ = 450 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 211 W 1.21 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 45 W CW) RθJC 0.83 °C/W Ordering Information Type and Version Package Outline Package Description Shipping Marking PTFA190451E V4 H-36265-2 Thermally-enhanced slotted flanges, single-ended Tray PTFA190451E PTFA190451F V4 H-37265-2 Thermally-enhanced earless flange, single-ended Tray PTFA190451F *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 03.1, 2009-02-20 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) 2-Tone Drive-up Broadband Performance VDD = 28 V, IDQ = 450 mA, ƒ = 1960 MHz, tone spacing = 1 MHz 35 -10 Return Loss 30 -15 -20 Efficiency 20 -25 15 -30 Gain 10 1900 1920 1940 1960 1980 2000 -35 2020 Efficiency -30 -35 IM5 -40 25 20 -50 IM7 -55 10 5 -65 34 36 38 40 500 mA Gain (dB) -47 400 mA -57 38 60 17 50 16 40 15 30 20 14 350 mA 40 10 13 42 0 10 20 30 40 50 60 Output Power (W) Output Power, Avg. (dBm) Data Sheet Gain 70 TCASE = 90°C Efficiency 450 mA 36 48 TCASE = 25°C 18 -42 34 46 Power Sweep, CW Conditions 19 32 44 VDD = 28 V, IDQ = 450 mA, ƒ = 1990 MHz -32 30 42 Output Power, PEP (dBm) PAR = 8 dB, 10 MHz carrier spacing, series show IDQ -52 15 -60 Two-carrier WCDMA at Various Biases 550 mA 30 -45 VDD = 28 V, ƒ = 1960 MHz, 3GPP WCDMA signal, 3rd Order IMD (dBc) 35 IM3 Frequency (MHz) -37 40 Drain Efficiency (%) 25 45 -25 Drain Efficiency (%) -5 Intermodulation Distortion (dBc) 40 Input Return Loss (dB) Gain (dB), Efficiency (%) VDD = 28 V, IDQ = 450 mA, POUT = 12 W 3 of 10 Rev. 03.1, 2009-02-20 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Typical Performance (cont.) Intermodulation Distortion Products vs. Tone Spacing Single-carrier WCDMA Drive-up 35 -30 30 Efficiency 25 20 -40 ACPR Up ACPR Low -45 15 -50 10 -55 5 30 32 34 36 38 40 42 -25 3rd -30 -35 -40 5th -45 -50 7th -55 44 0 5 10 Average Output Power (dBm) 45 Efficiency 40 35 -25 30 -30 25 -35 20 Gain -45 15 Drain Efficiency (%) -15 Gain (dB), Drain Efficiency (%) 3rd Order IMD (dBc) 50 25 26 27 28 29 30 31 35 40 25 -10 20 -20 15 -30 Adj Up Efficiency Alt Up 10 -40 -50 5 Adj Low Alt Low 10 23 24 30 6-Carrier TD-SCDMA Performance -10 -40 25 VDC = 28 V, IDQ = 380 mA, ƒo = 2017.5 MHz IDQ = 450 mA, ƒ = 1960 MHz, POUT (PEP) = 46.5 dBm, tone spacing = 1 MHz IM3 Up 20 Tone Spacing (MHz) IM3, Drain Efficiency and Gain vs. Supply Voltage -20 15 ACPR (dBc) -35 POUT = 46.5 dBm PEP -20 Intermodulation Distortion (dBc) -25 VDD = 28 V IDQ = 450 mA, ƒ = 1960 MHz, Drain Efficiency (%) Adjacent Channel Power Ratio (dBc) VDD = 28 V, IDQ = 450 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, P/A R = 8.5 dB, 3.84 MHz BW 0 32 33 -60 29 Supply Voltage (V) 31 33 35 37 39 Output Power, Avg. (dBm) *See Infineon distributor for future availability. Data Sheet 4 of 10 Rev. 03.1, 2009-02-20 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Typical Performance (cont.) Bias Voltage vs. Temperature Normalized Bias Voltage (V) Voltage normalized to typical gate voltage, series show current 1.03 0.09 A 1.02 0.28 A 1.01 0.46 A 0.70 A 1.00 1.39 A | 0.99 2.09 A 2.78 A 0.98 3.48 A 0.97 4.17 A 0.96 0.95 -20 0 20 40 60 80 100 Case Temperature (°C) Broadband Circuit Impedance Z Source Z Load G Z Load Ω MHz R jX R jX 1900 15.51 –0.094 5.73 –1.71 1930 16.30 –0.444 5.68 –1.52 1960 17.19 –0.881 5.69 –1.31 1990 18.02 –1.437 5.63 –1.08 2020 18.79 –2.315 5.61 –0.91 Z0 = 50 Ω 2020 MHz 0.5 1900 MHz 0.4 0.3 0.2 0.1 0.0 Z Source D LOAD S T OW AR NGT H - W AV E LE NGT H S S Data Sheet Z Source Ω Frequency D 2020 MHz 1900 MHz Z Load 0. 1 5 of 10 Rev. 03.1, 2009-02-20 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 V DD Q1 BCP56 C2 0.001µF R3 2K V C3 0.001µF R4 2K V R5 10 V C4 10µF 35V R6 1K V C5 0.1µF R8 5.1K R7 1K V C6 1µF C7 0.01µF V DD C8 10pF C11 10pF l7 R9 10 V l1 l3 l4 l8 l5 C14 22µF 50V C16 10pF DUT l2 C13 1µF l10 l6 C9 10pF RF_IN C12 0.02µF l9 l11 l12 l13 RF_OUT C15 0.7pF C10 2.8pF a190451ef_sch Reference circuit schematic for ƒ = 1960 MHz Circuit Assembly Information DUT PTFA190451E or PTFA190451F PCB 0.76 mm [.030"] thick, εr = 3.48 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 LDMOS Transistor Rogers 4350 Electrical Characteristics at 1960 MHz1 0.031 0.089 0.076 0.045 0.014 0.007 0.123 0.016 0.096 0.171 0.053 0.063 0.030 1 oz. copper Dimensions: L x W ( mm) Dimensions: L x W (in.) λ, 50.0 Ω λ, 50.0 Ω λ, 50.0 Ω λ, 6.7 Ω λ, 6.7 Ω λ, 77.0 Ω λ, 72.0 Ω λ, 8.5 Ω λ, 8.5 Ω λ, 67.0 Ω λ, 41.0 Ω λ, 41.0 Ω λ, 54.0 Ω 2.79 x 1.57 8.26 x 1.57 7.04 x 1.57 3.84 x 21.08 1.14 x 21.08 0.64 x 0.76 11.66 x 0.89 1.30 x 16.21 8.13 x 16.21 16.13 x 1.04 4.80 x 2.31 5.72 x 2.31 2.79 x 1.52 0.110 0.325 0.277 0.151 0.045 0.025 0.459 0.051 0.320 0.635 0.189 0.225 0.110 x x x x x x x x x x x x x 0.062 0.062 0.062 0.830 0.830 0.030 0.035 0.638 0.638 0.041 0.091 0.091 0.060 1Electrical characteristics are rounded. Data Sheet 6 of 10 Rev. 03.1, 2009-02-20 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Reference Circuit (cont.) R5 C5 R3 R4 C4 C3 C1 VDD C2 R1 R2 R6 R7 R4 C11 C12 C14 C3 C1 QQ1 C2 R1 R2 C4 R9 C7 R8 C8 C9 R3 C13 Q1 C6 RF_IN R5 C5 QQ1 Q1 R6 R7 C6 RF_OUT C10 C15 C16 C7 R8 C8 R9 a190451ef_dtl A190451_01 RO4350 a190451ef_assy Reference circuit assembly diagram* (not to scale) Component Description C1, C2, C3 C4 C5 C6, C13 C7 C8, C9, C11, C16 C10 C12 C14 C15 Q1 QQ1 R1 R2 R3 R4 R5, R9 R6, R7 R8 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Ceramic capacitor, 1 µF Capacitor, 0.01 µF Ceramic capacitor, 10 pF Ceramic capacitor, 2.8 pF Capacitor, 0.02 µF Capacitor, 22 µF, 50 V Ceramic capacitor, 0.7 pF Transistor Voltage regulator Chip Resistor 1.2 k-ohms Chip Resistor 1.3 k-ohms Chip Resistor 2 k-ohms Potentiometer 2 k-ohms Chip Resistor 10 ohms Chip Resistor 1 k-ohms Chip Resistor 5.1 k-ohms Suggested Manufacturer Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Digi-Key ATC Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 445-1411-1-ND 200B 103 100B 100 100B 2R8 200B 203 PCE3374CT-ND 100B 0R7 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND P5.1KECT-ND *Gerber Files for this circuit available on request Data Sheet 7 of 10 Rev. 03.1, 2009-02-20 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36265-2 2X 7.11 [.280] (45° X 2.03 [.080]) CL D 2.59±0.51 [.102±.020] S C L FLANGE 9.78 [.385] 15.34±0.51 [.604±.020] LID 10.16±0.25 [.400±.010] G 2x 7.11 [.280] 2X R1.60 [R.063] 4X R1.52 [R.060] 15.23 [.600] 10.16±0.25 [.400±.010] SPH 1.57 [.062] 3.56±0.38 [.140±.015 0.0381 [.0015] -A- 20.31 [.800] 2 0 0 7 1 - 1 1 - 6 _ h 3 - 6 + 3 7 2 6 5 _ P O s .v s d _ h 3 - 6 2 6 5 2 - 1.02 [.040] Diagram Notes:—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 8 of 10 Rev. 03.1, 2009-02-20 PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37265-2 (45° X 2.03 [.080]) CL 2.59±0.51 [.102±.020] D LID 10.16±0.25 [.400±.010] FLANGE 10.16 [.400] CL 15.34±.51 [.604±.020] 10.16 [.400] G 2X 7.11 [.280] FLANGE 4X R0.63 [R.025] MAX LID 10.16±0.25 [.400±.010] SPH 1.57 [.062] | 0.025 [.001]| -A3.56±.38 [.140±.015] S 10.16 [.400] 1.02 [.040] 0 7 1 1 1 9 _ h - 3 6 + 3 7 2 6 5 _ P O s _ h - 3 7 2 6 5 - 2 Diagram Notes:—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 03.1, 2009-02-20 PTFA190451E/F V4 Confidential, Limited Internal Distribution Revision History: 2009-02-20 2006-04-21, PTFA 190451E/F V1, Data Sheet Previous Version: Page Subjects (major changes since last revision) 1, 2, 8, 9, 10 7 New package and new product version. Fixed typing error Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-02-20 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 03.1, 2009-02-20