WILLAS FM120-M+ THRU 2N7002WT1 FM1200-M+ Small Signal MOSFET 115 mA, 60 V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H N–Channel SOT–323 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. capability, low forward • High We declare that the material ofvoltage productdrop. • current capability. • High surge compliance with RoHS requirements. overvoltage protection. • Guardring • ESDforProtected:1000V • Ultra high-speed switching. • Pb-Free package available epitaxial planar chip,is metal silicon junction. • Silicon parts meet environmental of ”G” • Lead-free RoHS product for packing standards code suffix • MIL-STD-19500 /228 Halogen free product for packing RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) SOT– 323 code suffix “H” Mechanical data MAXIMUM RATINGS flame retardant • Epoxy : UL94-V0 rated Rating Symbol Value : Molded plastic, SOD-123H • CaseDrain–Source Voltage VDSS 60 , • Terminals :Plated terminals, Drain–Gate Voltage (RGS =solderable 1.0 MΩ) per MIL-STD-750 VDGR 60 Method 2026 Drain Current ID • Polarity– :Continuous Indicated by band1.) TC cathode = 25°C (Note ID IDM – Continuous C = 100°C (Note 1.) Position : TAny • Mounting – Pulsed (Note 2.) • Weight : Approximated 0.011 gram Gate–Source Voltage – Continuous VGS MAXIMUM RATINGS AND ELECTRICAL – Non–repetitive (tp ≤ 50 µs) VGSM Ratings at 25℃ ambient temperature unless otherwise specified. RATINGS 0.031(0.8) Typ. Vdc Gate Dimensions in inches and (millimeters) 3 Source ±20 Vdc CHARACTERISTICS ±40 1 mAdc THERMAL CHARACTERISTICS 2 Vpk SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 12 20 VRRM Symbol Total Device Dissipation FR–5 Board P 14 D Maximum RMS Voltage VRMS (Note 3.) TA = 25°C Maximum DC Blocking Voltage 20 V DC Derate above 25°C Maximum Average Forward Rectified Current IO Thermal Resistance, Junction to Ambient RθJA Peak Forward Surge Current 8.3 ms single half sine-wave Total Device Dissipation PD IFSM superimposed on rated load (JEDEC method) 4.) TA = 25°C Alumina Substrate,(Note Derate above Typical Thermal Resistance (Note25°C 2) RΘJA Typical JunctionThermal Capacitance (Note 1) Junction to AmbientCJ Resistance, Operating Temperature Range Junction and Storage Temperature Storage Temperature Range Drain (Top View) Characteristic Maximum Recurrent Peak Reverse Voltage Vdc0.031(0.8) Typ. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Marking Code 0.024(0.6) Simplified Schematic TJ TSTG RθJA TJ, Tstg 13 Max 30 225 21 1.8 30 14 Unit 40 mW 28 mW/°C 40 556 °C/W 300 mW mW/°C 15 50 16 60 °C/W -55 to +125 °C -55 to +150 10 100 115 150 120 200 Volts 35 42 56 70 105 140 Volts 50 60 80 100 150 200 Volts 1.0 MARKING DIAGRAM & PIN ASSIGNMENT 30 2.4 417 18 80 40 120 3 PF -556C to +150 ℃ - 65 to +175 1 ℃/W Amps Amps Drain W ±115 ±75 ±800 0.040(1.0) Unit ℃ 2 Gate Source 1. TheCHARACTERISTICS Power Dissipation of the packageSYMBOL may result in a lower continuous drainFM150-MH FM160-MH FM180-MH FM120-MH FM130-MH FM140-MH FM1100-MH FM1150-MH FM1200-MH UNIT current. Volts Maximum Forward Voltage at 1.0A DC 0.92 6C 0.85 = Device Code0.9 VF 0.50 0.70 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. W =Month Code 0.5 Maximum Average Reverse Current at @T A=25℃ 3. FR–5 = 1.0 x 0.75 x 0.062 in. IR mAmps 10 @T A=125℃ Rated DC Blocking Voltage= 0.4 x 0.3 x 0.025 4. Alumina in 99.5% alumina. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient ORDERING INFORMATION Device Marking 2N7002WT1 6C. 2012-06 2013-01 Shipping 3000 Tape & Reel WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2N7002WT1 FM1200-M+ Small Signal MOSFET 115 mA, 60 V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA =resistance. better reverse leakage current and thermal in order to • Low profile surface mounted application Characteristic Symbol optimize board space. OFFpower CHARACTERISTICS loss, high efficiency. • Low current capability, low forward voltage drop. • High Drain–Source Breakdown Voltage V(BR)DSS ID = 10 µAdc) capability. • High(Vsurge GS = 0, for overvoltage protection. • Guardring Zero Gate Voltage Drain Current TJ = 25°C IDSS switching. • Ultra(Vhigh-speed TJ = 125°C GS = 0, VDS = 60 Vdc) • Silicon epitaxial planar chip, metal silicon junction. Gate–Body Leakage Forwardstandards of IGSSF parts meet Current, environmental • Lead-free (VGS = 20 Vdc)/228 MIL-STD-19500 productLeakage for packing code suffix "G" • RoHS Gate–Body Current, Reverse IGSSR Halogen free product for packing code suffix "H" (VGS = – 20 Vdc) SOD-123H Min Typ 0.146(3.7) 0.130(3.3) 60 – – – – – – – – – Max Unit 0.012(0.3) Typ. – Vdc 1.0 500 µAdc 1 µAdc -1 µAdc 0.071(1.8) 0.056(1.4) Mechanical data ON CHARACTERISTICS (Note 2.) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Gate Threshold Voltage • Case(V:DSMolded = VGS, plastic, ID = 250 SOD-123H µAdc) , • Terminals :Plated terminals, solderable per MIL-STD-750 On–State Drain Current VGS(th) • Polarity : Indicated byOn–State cathodeVoltage band Static Drain–Source (VGS =Position 10 Vdc, ID = 500 mAdc) : Any • Mounting (V = 5.0 Vdc, ID = 50 mAdc) • WeightGS: Approximated 0.011 gram 2.5 500 – – Vdc mA Dimensions in inches and (millimeters) VDS(on) – – 3.75 – – 0.375 Vdc Static Drain–Source On–State Resistance rDS(on) Ohms = 10 V, ID = 500 mAdc) AND TC = ELECTRICAL 25°C – 1.4 7.5 (VGS MAXIMUM RATINGS CHARACTERISTICS TC = 125°C – – 13.5 Ratings at 25℃ temperature unless otherwise specified. (VGSambient – 1.8 7.5 = 5.0 Vdc, ID = 50 mAdc) TC = 25°C Single phase half wave, 60Hz, resistive of inductive load. – – 13.5 TC = 125°C For capacitive load, derate current by 20% Forward Transconductance gFS 80 – – mmhos SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) Marking Code VRRM 12 20 13 30 14 40 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 DYNAMIC CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) 1.6 0.031(0.8) Typ. ID(on) Method (VDS ≥ 2.0 VDS(on)2026 , VGS = 10 Vdc) 1.0 0.031(0.8) Typ. Output Capacitance Maximum Average Rectified (VDSForward = 25 Vdc, VGS = Current 0, f = 1.0 MHz) Peak ForwardReverse Surge Current 8.3 ms single half sine-wave Transfer Capacitance (Vrated 25 Vdc, VGSmethod) = 0, f = 1.0 MHz) superimposed on (JEDEC DS = load IO IFSM Typical Thermal ResistanceCHARACTERISTICS (Note 2) RΘJA SWITCHING (Note 2.) Typical Junction Capacitance (Note 1) Turn–On Delay Time Operating Temperature Range Turn–Off Range Delay Time Storage Temperature CHARACTERISTICS Diode Forward On–Voltage (IS = 11.5 mAdc, VGS = 0 V) Maximum Forward Voltage at 1.0A DC 50 Coss 60 42 18 80 – 10 100 17 70 56 80 Crss – 1.0 30– td(on) 40 120 – td(off) - 65 to–+175 100 10 2.5 115 150 50 25 105 150 5.0 120 200 pF 140 Volts Volts Volts 200 pF Amps pF Amps ℃/W 7 20 -55 to +150 11 40 PF ns ℃ ns ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Source Current Continuous @T A=125℃ (Body Diode) Rated DC Blocking Voltage NOTES: TSTG Maximum Average Reverse Current at @T A=25℃ 16 60 CJ (V DD = 25 Vdc -55 to +125 TJ , ID ^ 500 mAdc, RG = 25 Ω, RL = 50 Ω, Vgen = 10 V) BODY–DRAIN DIODE RATINGS 15 50 C 35iss IR Source Current Pulsed 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 VSD 0.70 – – 0.85 –1.5 0.9 Vdc 0.92 IS 0.5 – 10 – –115 mAdc ISM – – –800 mAdc Volts mAmps 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 2- Thermal Resistance From Junction to Ambient 2012-06 2013-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2N7002WT1 FM1200-M+ Small Signal MOSFET 115 mA, 60 V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H in orderELECTRICAL to • Low profile surface mounted application TYPICAL CHARACTERISTICS optimize board space. VDS = 10 V 7V 6V Mechanical data 0.6 5V • Epoxy 0.4 : UL94-V0 rated flame retardant 4V • Case0.2: Molded plastic, SOD-123H 3 V, • Terminals :Plated terminals, solderable per MIL-STD-750 0 0 1.0 2.02026 3.0 4.0 5.0 6.0 7.0 8.0 Method VDS, DRAIN SOURCE VOLTAGE (VOLTS) Polarity : Indicated by cathode band 9.0 125°C 0.6 0.4 0.040(1.0) 0.024(0.6) 0.2 0.031(0.8) Typ. 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 10 Figure 2. Transfer Characteristics RATINGS 1.6 VRRM 12 20 13 30 VRMS 14 21 Maximum DC Blocking Voltage 1.0 VDC 20 30 Maximum Average 0.8 Forward Rectified Current IO IFSM 0.6 Current 8.3 ms single half sine-wave Peak Forward Surge superimposed on0.4 rated load (JEDEC method) -ā20 +ā20 +ā60 +ā100 RΘJA T, TEMPERATURE (°C) Typical Junction Capacitance (Note 1) CJ Figure 3. Temperature versus Static Operating Temperature Range TJ Typical Thermal Resistance (Note 2) Storage Temperature Range 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum RMS 1.2 Voltage -ā60 VGS(th), THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 9.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1.2 1.4 Peak Reverse Voltage Maximum Recurrent 0.031(0.8) Typ. Dimensions in inches and (millimeters) 2.4 Ratings at 25℃ ambient temperature unless otherwise specified. 2.2 Single phase half wave, VGS =60Hz, 10 V resistive of inductive load. 2.0 For capacitive load, derate by 20% mA ID = 200 current 1.8 Marking Code 25°C -ā55°C 0.071(1.8) 0.056(1.4) • Figure 1. Ohmic Region • Mounting Position : Any • Weight : Approximated 0.011 gram 0.012(0.3) Typ. 0.8 8V MIL-STD-19500 /228 RoHS1.0product for packing code suffix "G" Halogen 0.8 free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 1.0 ID, DRAIN CURRENT (AMPS) • I D, DRAIN CURRENT (AMPS) • Low power loss, high efficiency. current capability, low forward voltage drop. • High2.0 surge capability. • High1.8 T = 25°C • Guardring forA overvoltage protection. 1.6 VGS = 10 V • Ultra high-speed switching. 1.4 epitaxial planar chip, metal silicon junction. 9V • Silicon parts meet environmental standards of • Lead-free 1.2 1.0 14 0.95 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 0.9 28 35 42 56 70 105 140 Volts 40 0.85 50 60 80 100 150 200 Volts 1.0 30 0.8 0.75 +ā140 0.7 -ā60 Amps Amps -ā20 +ā20 +ā100 +ā60 40 T, TEMPERATURE (°C) 120 -55 to +150 Gate Figure 4. Temperature versus +ā140 ℃/W -55 to +125 Drain–Source On–Resistance TSTG PF ℃ Voltage - 65Threshold to +175 ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2013-01 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2N7002WT1 FM1200-M+ Small Signal MOSFET 115 mA, 60 V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H SOT−323 optimize board space. .054(1.35) .045(1.15) .004(0.10)MIN. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. .087(2.20) • Guardring for overvoltage protection. .070(1.80) • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .010(0.25) .003(0.08) .056(1.40) Method 2026 0.012(0.3) Typ. • Polarity : Indicated by cathode band .047(1.20) • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage 12 20 VRRM .016(0.40) Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO Dimensions IFSM .008(0.20) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ CHARACTERISTICS 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 1.0 30 40 120 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 FOOTPRINT* 0.50 0.70 IR ℃ 0.85 10 0.9 0.92 Volts mAmps 1.9 0.075 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.9 0.035 0.7 0.028 2013-01 115 150 0.5 2012-06 10 100 0.65 @T A=125℃ 2- Thermal Resistance From Junction to Ambient 18 80 SYMBOL 0.025 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 0.65 FM120-MH FM130-MH FM140-MH Maximum Average Reverse Current at @T A=25℃ 16 60 -55 to +125 V0.025 F Maximum Forward Voltage at 1.0A DC 15 50 SOLDERING TSTG Storage Temperature Range 14 40 in inches and (millimeters) RΘJA Typical Thermal Resistance (Note 2) Rated DC Blocking Voltage 13 30 .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. .004(0.10)MAX. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% SCALE 10:1 mm inches WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. Small Signal MOSFET 115 mA, 60 V 2N7002WT1 Ordering Information: Device PN 2N7002WT1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2013-01 WILLAS ELECTRONIC CORP.