SOT-723 Plastic-Encapsulate MOSFETS

WILLAS
FM120-M+
THRU
6.07
FM1200-M+
1.0A SURFACEPlastic-Encapsulate
MOUNT SCHOTTKY BARRIER RECTIFIERS
SOT-723
MOSFETS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
N-Channel
MOSFET
high efficiency.
• Low power loss,
• High current capability, low forward voltage drop.
FEATURES
• High surge capability.
Low on-resistance
for overvoltage protection.
•zGuardring
high-speed
switching.
•zUltraFast
switching
speed
• Silicon epitaxial planar chip, metal silicon junction.
Low voltage
drive
makes this
deviceofideal for portable equipment
parts meet
environmental
standards
•zLead-free
MIL-STD-19500
/228
z Drive circuits can be simple
• RoHS product for packing code suffix "G"
zHalogen
Parallel
use isforeasy
free product
packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-723
0.071(1.8)
0.056(1.4)
1. GATE
2. SOURCE
3. DRAIN
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0
APPLICA
TIONS rated flame retardant
Case : Molded plastic, SOD-123H
•Interfacing
, Switching
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
MARKING:KN
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
KN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Pb-Free package is available
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
RATINGS
RoHS product
for packing code suffix
”G”
Marking Code
12
13
14
15
16
Halogen free product for packing code suffix “H”
20
30
40
50
60
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
14
21
28
35
FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
42
18
80
10
100
115
150
120
200
Volts
56
70
105
140
Volts
200
Volts
diode is included between V
the
gate and
terminals
to
the diode80against100
static electricity
Maximum*A
DCprotection
Blocking Voltage
20 the source
30
40
50protect60
150
DC
theForward
product
is in use.
Use a protection
Maximumwhen
Average
Rectified
Current
IO circuit when the fixed voltages are exceeded.
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum ratings (Ta=25℃
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Parameter
Storage Temperature Range
CJ
TJ
TSTG
Drain-source voltage
Gate-source
voltage
CHARACTERISTICS
Maximum Average Reverse Current at @T A=25℃
Power dissipation
@T A=125℃
NOTES:
Junction temperature
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
IR
Thermal resistance from junction to ambient
Storage
temperature
2- Thermal
Resistance
From Junction to Ambient
Amps
40
120
-55Symbol
to +125
Value
-55 to +150
- 65 to +175
VDS
℃/W
PF
Units
℃
℃
30
V
VGS FM140-MH FM150-MH FM160-MH
±20FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH
VF
Maximum
Forward Voltage
1.0A DC
Continuous
drainatcurrent
Rated DC Blocking Voltage
30
unless otherwise noted)
RΘJA
Amps
IFSM
ID0.50
PD
0.70
±100
0.5
0.85
0.9 mA
Volts
0.15
W
RθJA
833
℃/W
TJ
150
Tstg
-55 ~+150
10
0.92
mAmps
℃
* Pw≤10µs ,Duty cycle≤1%
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
6.07
FM1200-M+
SOT-723 Plastic-Encapsulate MOSFETS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
Electrical
(Ta=25℃ unless otherwise noted)
for overvoltage protection.
• Guardringcharacteristics
• Ultra high-speed switching.
planar chip, metal silicon junction.
• Silicon epitaxial
Parameter
Symbol
Test Condition
• Lead-free parts meet environmental standards of
Drain-source
breakdown
MIL-STD-19500
/228 voltage
V(BR) DSS
VGS = 0V, ID =10µA
IGSS
VDS =0V, VGS =±20V
IDSS
VDS =30V, VGS =0V
for packing
code suffix "G"
• RoHS productleakage
Gate-source
current
Halogen free product for packing code suffix "H"
Zero
gate voltage drain
current
Mechanical
data
Gate
threshold
voltage
: UL94-V0
rated flame retardant
• Epoxy
VGS(th)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Min
Typ
VDS =3V, ID =100µA
gFS
0.8
5
µA
8
0.031(0.8) Typ.
7
Coss
Reverse transfer capacitance
Crss
4
Turn-on delay time
td(on)
15
V
Ω
13
mS
Dimensions in inches and (millimeters)
Ciss
13
VDS =5V,VGS =0V,f =1MHz
Ratings at 25℃ ambient temperature unless otherwise specified.
Rise time
tr
Single phase
half wave, 60Hz, resistive of inductive load.
For capacitive
load,
derate
current
by
20%
Turn-off delay time
td(off)
RATINGS
1.0
1.5
• Polarity : Indicated by cathode band
Input capacitance
• Mounting Position : Any
Output
• Weightcapacitance
: Approximated 0.011 gram
Fall time
µA
0.040(1.0)
0.024(0.6)
pF
9
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
±1
20
VDS =3V, ID =10mA
Unit
V
• Case : Molded plastic, SOD-123H
VGS =4V, ID =10mA
0.031(0.8) Typ.
RDS(on)
,
• Terminals :Plated terminals, solderable per MIL-STD-750VGS =2.5V, ID =1mA
Method 2026
Max
30
Static drain-source on-state resistance
Forward transconductance
0.071(1.8)
0.056(1.4)
VGS=5V,VDD=5V, ID =10mA
35
RL=500Ω,RG=10Ω
80
ns
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
tf
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
80
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
6.07
FM1200-M+
SOT-723 Plastic-Encapsulate MOSFETS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Package outline
Typical Characteristics
Features
• Batch process design, excellent power dissipation offers
Output
Characteristics
better reverse leakage
current
and thermal resistance.
0.20 profile surface mounted application in order to
• Low
4.0V
VGS=3.0V
Ta=25
℃
optimize
board
space.
3.5V
100
ID
DRAIN CURRENT
VGS=2.0V
• Epoxy : UL94-V0 rated flame retardant
V =1.5V
• Case : Molded plastic, SOD-123H
0.00
,
0
1
2
3
4
5
• Terminals
:Plated
terminals,
solderable
per MIL-STD-750
0.071(1.8)
0.056(1.4)
10
3
1
0.040(1.0)V =3V
DS
0.024(0.6)
0.3
Ta=25℃
GS
DRAIN TO SOURCE VOLTAGE
Method 2026
VDS
0.012(0.3) Typ.
(mA)
(A)
ID
DRAIN CURRENT
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.146(3.7)
0.130(3.3)
30
GS
0.05
Transfer
Characteristics
SOD-123H
200
Pulsed
loss, high efficiency.
• Low power
• High current capability, low forward voltage drop.
0.15 surge capability.
• High
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
V =2.5V
0.10
• Lead-free parts meet environmental standards of
•
Pb Free Product
0.1
Pulsed
0.031(0.8) Typ.
0
0.031(0.8) Typ.
1
(V)
2
3
GATE TO SOURCE VOLTAGE
• Polarity : Indicated by cathode band
• Mounting Position : Any
RDS(ON) —— ID
• Weight
: Approximated 0.011 gram
60
VGS
Dimensions in inches and (millimeters)
RDS(ON) —— VGS
15
Ta=25℃
Ta=25℃
Pulsed
Pulsed
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
20 Voltage
Maximum RMS
VRMS
14
21
VDC
20
30
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
VGS=2.5V
Peak Forward Surge Current 8.3 ms single half sine-wave
0 rated load (JEDEC method)
superimposed on
3
1
10
IO
IFSM
30
Typical Thermal Resistance (Note
2) CURRENT ID (mA)RΘJA
DRAIN
200
100
IS
——
VSD
VGS=0V
CHARACTERISTICS
IS (mA)
NOTES:
5
28
35
42
40
50
60
100
200
0
0
80
ID=100mA
18
10
100
115
150
120
200
Volts
56
70
105
140
Volts
80
100
150
200
Volts
1.0
30
5
Amps
Amps
10
40
GATE TO SOURCE
VOLTAGE
120
-55 to +125
15
VGS
20
℃/W
(V)
PF
-55 to +150
℃
- 65 to +175
TSTG
VF
Maximum Average Reverse Current at @T A=25℃
30
16
60
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
T =25℃
a
Maximum Forward
Voltage at 1.0A DC
Pulsed
0.50
0.70
0.85
0.5
IR
@T A=125℃
Rated DC Blocking Voltage
15
50
VGS=4V
TJ
Operating Temperature Range
14
40
ID=50mA
CJ
Typical Junction Capacitance (Note 1)
( )
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Storage Temperature Range
10
RDS(ON)
RATINGS
ON-RESISTANCE
RDS(ON)
( )
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
40
For capacitive
load, derate current by 20%
ON-RESISTANCE
4
(V)
10
0.9
0.92
Volts
mAmps
10
SOURCE CURRENT
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance
From Junction to Ambient
3
1
0.3
0.1
2012-060.2
2012-0
0.4
0.6
SOURCE TO DRAIN VOLTAGE
0.8
VSD (V)
1.0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
6.07
THRU
FM1200-M+
SOT-723 Plastic-Encapsulate MOSFETS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
Outline Drawing
• Batch process design, excellent power dissipation offers
SOT-723
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.049(1.25)
.045(1.15)
Halogen free product for packing code suffix "H"
.030(0.75)
.034(0.85)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
.049(1.25)
.045(1.15)
MIL-STD-19500 /228
.006(0.15)MIN.
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
Mechanical data
0.012(0.3) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.003(0.8)
Marking Code
.007(0.17)
.003(0.07)
FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
I
.011(0.27)
@T A=125℃
.006(0.15)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
R
.034(0.85)
.030(0.45)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
0.50
0.70
0.85
0.5
0.9
0.92
Volts
mAmps
10
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
Rev.C
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
SOT-723 Plastic-Encapsulate MOSFETS
6.07
Ordering Information: Device PN 2SK3541M3T5G(1)‐WS Packing Tape&Reel: 8 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-0
WILLAS ELECTRONIC CORP.