WILLAS FM120-M+ MMBT4401LT1 THRU Purpose Transistor FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation ••Batch We declare that the material of product complianceoffers with RoHS requirements. better reverse leakage and thermal resistance. Pb-Free package iscurrent available • Low profile surface mounted application in order to RoHS product for packing code suffix ”G” optimize board space. Halogen for packing code suffix “H” power free loss,product high efficiency. • Low • High current capability, low forward voltage drop. High surge capability. •ORDERING INFORMATION • Guardring for overvoltage protection. high-speed switching. • Ultra Device Marking Shipping • Silicon epitaxial planar chip, metal silicon junction. MMBT4401LT1 2X 3000/Tape & Reel parts meet environmental standards of • Lead-free SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 RATINGS RoHS product for packing code suffix "G" •MAXIMUM Halogen free product for packing code suffix "H" Rating Symbol Mechanical data Collector–Emitter Voltage V CEO Value Unit 40 Vdc • Epoxy : UL94-V0 rated flame retardant 60 Collector–Base Voltage V • Case : Molded plastic, SOD-123H CBO , 6.0 Emitter–Base Voltage V EBO per MIL-STD-750 • Terminals :Plated terminals, solderable Method— 2026 Collector Current Continuous IC 600 • Polarity : Indicated by cathode band Mounting Position : Any •THERMAL CHARACTERISTICS • Weight : Approximated 0.011 gram Characteristic 0.040(1.0) 0.024(0.6) Vdc 0.031(0.8) Typ. 0.031(0.8) Typ. Vdc 3 COLLECTOR mAdc Dimensions in inches1and (millimeters) BASE Symbol Max Unit 2 EMITTER 225 mW Total Device Dissipation FR– 5 Board, (1) PD MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS TA = 25°C Ratings at 25℃ ambient temperature unless otherwise specified. Derate above 25°C 1.8 mW/°C Single phase half wave, 60Hz, resistive of inductive load. Thermal Resistance, Junction to Ambient RθJA 556 °C/W For capacitive load, derate current by 20% Total Device Dissipation PD 300 mW SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS(2) TA = 25°C Alumina Substrate, Marking CodeDerate above 25°C 12 13 14 15 18 10 115 120 2.4 mW/°C 16 20 30 40 50 80 100 150 200 Maximum Recurrent Reverse Junction Voltage to Ambient VRRM Volts ThermalPeak Resistance, RθJA 417 °C/W 60 VRMS T14 J , Tstg 21 –55 to28 +150 35°C 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 50 60 80 100 150 200 Volts MaximumDEVICE Average Forward Rectified Current MARKING IO IFSM Maximum RMS Voltageand Storage Temperature Junction SOT–23 Peak ForwardMMBT4401LT1 Surge Current 8.3 ms single half sine-wave = 2X superimposed on rated load (JEDEC method) 40 1.0 30 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) Characteristic TJ Operating Temperature Range OFF CHARACTERISTICS Storage Temperature Range CHARACTERISTICS (I C = 1.0 mAdc, I B = 0) Maximum Average Reverse (I C = 0.1 mAdc,Current I E = 0)at @T A=25℃ A=125℃ Rated DC Blocking Voltage Breakdown @T Emitter–Base Voltage 2012-06 2012-11 Min 40 120 Max Amps ℃/W PF Unit -55 to +150 ℃ - 65 to +175 V (BR)CEO ℃ Vdc SYMBOL FM120-MH FM130-MH FM140-MH 40 FM150-MH FM160-MH — FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF IR (I E = 0.1 mAdc, I C = 0) Base Cutoff Current 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. (V CE = 35 Vdc, V EB = 0.4 Vdc) 2- Thermal Resistance From Junction to Ambient Collector Cutoff Current (V CE = 35 Vdc, V EB = 0.4 Vdc) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. NOTES: Symbol -55 to +125 TSTG Collector–Emitter Breakdown Voltage (3) Maximum Forward Voltage at Breakdown 1.0A DC Collector–Base Voltage Amps V (BR)CBO 0.50 0.70 60 V (BR)EBO 0.85 Vdc 0.5 — 10 6.0 — — 0.1 — 0.1 0.9 0.92 Volts mAmps Vdc µAdc I BEV µAdc I CEX WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT4401LT1 FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Purpose Transistor Pb Free Product SOD-123+ PACKAGE Package ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) outline Features Characteristic power dissipation offers • Batch process design, excellent Symbol Min Max better reverse leakage current ON CHARACTERISTICS ( 3 and ) thermal resistance. SOD-123H surface mounted application in order to • Low profile DC Current Gain hFE optimize board space. (I C = 0.1 mAdc, V CE = 1.0 Vdc) • Low power loss, high efficiency. (I C = 1.0 mAdc, V CE = 1.0 Vdc) capability, low forward voltage drop. • High current (I C = 10 mAdc, V CE = 1.0 Vdc) capability. • High surge (I C =for 150overvoltage mAdc, V CE =protection. 1.0 Vdc) • Guardring (I = 500 mAdc, V = C CE • Ultra high-speed switching. 2.0 Vdc) Voltage epitaxial planar Saturation chip, metal silicon junction. • SiliconCollector–Emitter (I = 150 mAdc, I = 15 mAdc) C B • Lead-free parts meet environmental standards of MIL-STD-19500 /228 I B = 50 mAdc) (I C = 500 mAdc, for packing code suffix "G" • RoHS product Base–Emitter Saturation Voltage Halogen free product for packing code suffix "H" (I C = 150 mAdc, I B = 15 mAdc) Mechanical data (I C = 500 mAdc, I B = 50 mAdc) • Epoxy : UL94-V0 rated flame retardant –– –– 0.4 0.75 0.75 –– 0.95 1.2 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Vdc V BE(sat) Vdc 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. fT 14 21 28 35 42 56 70 105 140 Volts 20 VDC DelayForward Time Rectified (V CC = 30 Vdc, V EB = Maximum Average Current IO2.0 Vdc 30 40 50 60 80 15 100 150 200 Volts CHARACTERISTICS MaximumSWITCHING DC Blocking Voltage VRMS I C = 150 mAdc, I B1 = 15 mAdc) Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Storage Time (V CC = 30 Vdc, I C = 150 mAdc superimposed on rated load (JEDEC method) Rise Time Fall Time Typical Thermal Resistance (Note 2) I B1 = I B2 = 15 mAdc) RΘJA CJ 3. Pulse Test: Pulse Width <300 µs; Duty Cycle Operating Temperature Range TJ<2.0%. Typical Junction Capacitance (Note 1) Storage Temperature Range CHARACTERISTICS Maximum Forward Voltage at 1.0A DC + 16 V — — ts — tf — 1.0 30 40 120 -55 to +125 NOTES: ns 225 ns 30 Amps ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT +30 V DUTY CYCLE = 2% @T A=125℃ VF 0.50 200 IR Ω + 16 V 0.70 0.9 +30 0.85 V 1.0 to 100µs, 0.5 DUTY CYCLE = 2% 0.92 Volts 200Ω mAmp 10 1.0 kΩ 1.0 kΩ Amps 20 SWITCHING TIME EQUIVALENT TEST CIRCUITS to 100µs, Maximum Average Reverse1.0 Current at @T A=25℃ Rated DC Blocking Voltage td tr TSTG –– 0.146(3.7) 0.130(3.3) –– –– 300 –– MHz (I C = Method 20 mAdc, V CE= 10Vdc, f = 100 MHz) 250 –– 2026 C cb Dimensions in inches and (millimeters) pF • PolarityCollector–Base : Indicated byCapacitance cathode band (V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz) –– 6.5 • Mounting Position : Any Emitter–Base Capacitance C eb pF • Weight(V: Approximated 0.011 gram –– 30 EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance h ie kΩ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 1.0 15 –4 Ratings at 25℃ Voltage ambientFeedback temperature unless otherwise specified. Ratio h re X 10 Single phase half wave, 60Hz, resistive of inductive load. (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 0.1 8.0 For capacitive load, derate current by 20% Small–Signal Current Gain h fe — FM1100-MH FM1150-MH FM1200-MH UNIT (V CE=RATINGS 10 Vdc, I C = 1.0 mAdc, f = 1.0SYMBOL kHz) FM120-MH FM130-MH FM140-MH FM150-MH 40 FM160-MH FM180-MH 500 Marking Code Output Admittance 12 13h oe 14 15 16 18 10 µmhos 115 120 20 30 40 501.0 60 80 100 150 200 Maximum Recurrent Reverse Volts (V Peak Vdc, I CVoltage = 1.0 mAdc, f = 1.0VkHz) 30 RRM CE= 10 Maximum RMS Voltage –– 20 40 80 100 40 VCE(sat) Molded plastic, SOD-123H • Case : SMALL–SIGNAL CHARACTERISTICS , Current–Gain — Bandwidth Product per MIL-STD-750 • Terminals :Plated terminals, solderable Unit 0 0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. – 2.0V <2.0 ns 2- Thermal Resistance From Junction to Ambient C S*< 10 pF C S* < 10 pF –14 V < 20 ns 1N916 – 4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time 2012-06 2012-11 Figure 2. Turn–Off Time WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT4401LT1 Purpose Transistor FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline TRANSIENT CHARACTERISTICS Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to T J = 25°C T J = 100°C MIL-STD-19500 /228 RoHS product for packing code suffix "G" •5.0 Halogen free product for packing code suffix "H" 10 7.0 QT 2.0 • Epoxy : UL94-V0 rated flame retardant Case Molded plastic, •2.0 0.1 :0.2 0.3 0.5 1.0 SOD-123H 2.0 3.0 5.0 10 20 30 50 , • Terminals :Plated terminals, solderable per MIL-STD-750 0.7 0.5 0.3 Q 0.2 0.040(1.0) A 0.024(0.6) 0.1 10 0.031(0.8) 20Typ. 30 Figure 4. Charge Data I C /I B = 10 VRRM 12 20 13 30 Maximum7.0RMS Voltage VRMS 14 VDC 20 Maximum5.0DC Blocking Voltage 20 30 50 Forward Rectified 200IO 300 70 100 Current 14 15 50 16 60 18 80 10 100 115 150 120 200 Volts 21 7.0 28 35 42 56 70 105 140 Volts 30 5.0 40 50 60 80 100 150 200 Volts 10 CHARACTERISTICS NOTES: Amp - 65 to +175 50 ℃/W 70 VF Reverse Current at @T A=25℃ PF -55 to +150 V CC = 30 V ℃ ℃ I B1 = I B2 I C /I B = 20 30 0.50 IR @T A=125℃ Rated DC Blocking Voltage Amp 500 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC Maximum100 Average 100 t f , FALL TIME (ns) t f , STORAGE TIME (ns) Storage Temperature Range 200 300 40 120 -55 to +125 t s’ = tTs J– 1/8 t f I B1 TSTG = I B2 I C/I B = 10 to 20 Operating Temperature Range 30 Figure 6. Rise and Fall Time CJ 300 50 70 100 200 1.0 I C , COLLECTOR CURRENT (mA) 30 20 RΘJA Typical Junction Capacitance (Note 1) 70 50 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 10 40 500 Time Typical Thermal Resistance (Note 2) tf 30 I C 8.3 , COLLECTOR Peak Forward Surge Current ms single half CURRENT sine-wave (mA) IFSM Figure 5. Turn–On superimposed on rated load (JEDEC method) t , RISE TIME (ns) t , TIME (ns) Maximum10Recurrent Peak Reverse Voltage Maximum V CC= 30V I C/I B =10 tr 20 t d@V EB=0V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Marking Code 70 Ratings at 25℃ ambient temperature unless otherwise specified. t r @V CC=30V Single phase half wave, 60Hz, resistive of inductive =10V t r @Vload. 30 CC For capacitive load, derate current by 20% t d@V EB=2.0V 10 Average 200 0.031(0.8) 300 Typ.500 100 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 50 20 70 100 70 50 I C , COLLECTOR CURRENT (mA) Figure 3. Capacitance 50 0.071(1.8) 0.056(1.4) 1.0 REVERSE VOLTAGE (VOLTS) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any 100 • Weight : Approximated 0.011 gram 0.012(0.3) Typ. 3.0 C cb Mechanical data 3.0 0.146(3.7) 0.130(3.3) V CC = 30 V I C / I B = 10 5.0 Q, CHARGE (pC) CAPACITANCE (pF) optimize board space. Low power loss, high efficiency. • 30 • High current capability, low forward voltage drop. 20 • High surge capability. • Guardring for overvoltage protection. C obo • Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. • 10 Lead-free parts meet environmental standards of •7.0 0.70 I C /I B = 10 20 0.9 0.85 0.92 0.5 Volts mAmp 10 10 7.0 2- Thermal Resistance From Junction to Ambient 30 5.0 10 2012-06 2012-11 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 500 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT4401LT1 FM1200-M+ Purpose Transistor 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE Package V CE = 10 Vdc, T A = 25°C Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Bandwidth = 1.0 Hz Features • profile surface mounted application in order to • Low 10 SOD-123H 10 optimize board space. I C = 1.0 mA, R S = 150 Ω f = 1.0 kHz efficiency. • Low power loss, high I C = 500 µA, R S = 200 Ω R S = OPTIMUM 8.0 • High current capability, µA, Rforward = 2.0 kΩvoltage I C = 100low RSdrop. = SOURCE S • High surge capability. I C = 50 µA, R S = 4.0 kΩ RS = RESISTANCE 6.0 for overvoltage protection. • Guardring • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon 4.0 • Lead-free parts meet environmental standards of 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) • outline MIL-STD-19500 /228 2.0product for packing code suffix "G" RoHS Halogen free product for packing code suffix "H" Mechanical data 0 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. I C = 50 µA I C = 100 µA I C = 500 µA I C = 1.0 mA 6.0 0.071(1.8) 0.056(1.4) 4.0 2.0 0 0.040(1.0) 0.05 0.1 0.2 1.0 2.0 5.0 10 20 50 100 500 100 200 500 1.0k 2.0k 5.0k 10k 0.024(0.6) 20k 50k 100k UL94-V0 rated flame0.5 retardant • Epoxy :0.010.02 f , FREQUENCY (kHz) R S, SOURCE RESISTANCE (kΩ) • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. Figure 9. Frequency Effects , Figure 10. Source Resistance Effects • Terminals :Plated terminals, solderable per MIL-STD-750 h PARAMETERS Method 2026 Dimensions in inches and (millimeters) (V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C) • Polarity : Indicated by cathode band Position : Any • MountingThis group of graphs illustrates the relationship between h fe and other “h” parameters for this series of • Weightransistors. : Approximated 0.011 gramcurves, a high–gain and a low–gain unit were selected from the LMBT4401LT1 To obtain these lines, and the same units were used to develop the correspondingly numbered curves on each graph. RATINGS 100 12 1 LMBT4401LT1 UNIT 20 VRRM LMBT4401LT1 UNIT 2 14 VRMS 70 Maximum Recurrent Peak Reverse Voltage Maximum RMS 50 Voltage Maximum DC Blocking Voltage 13 30 21 20 VDC 30 30 IO 20 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) Storage Temperature Range 7.0 Maximum Forward Voltage at 1.0A DC 2.0 Maximum Average Reverse Current at @T A=25℃ NOTES: IR @T A=125℃ 0.7 2- Thermal Resistance From Junction to Ambient 0.3 0.2 2012-06 2012-11 0.1 0.2 0.3 0.5 0.7 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 50 60 80 100 150 200 Volts 1.0 0.1 0.2 0.3 1.0 0.5300.7 Amps 1.0 2.0 3.0 7.0 5.0 Amps 10 I C , COLLECTOR CURRENT (mA) 40 Figure 12. 120Input Impedance -55 to +150 ℃/W -55 to +125 1- Measured at 10.5 MHZ and applied reverse voltage of 4.0 VDC. 18 80 100 PF ℃ - 65 to +175 ℃ 50 LMBT4401LT1 UNIT 1 LMBT4401LT1 UNIT 1 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT LMBT4401LT1 UNIT 2 LMBT4401LT1 UNIT 2 Volts 0.9 0.92 VF 0.50 20 0.70 0.85 CHARACTERISTICS 3.0 1.0 16 60 40 2.0 10 TSTG 5.0 15 50 Volts TJ Operating Temperature Range 10 14 40 5.0 Figure Typical Junction Capacitance (Note 1) 11. Current Gain CJ Rated DC Blocking Voltage 20 0.5 7.0 5.0 I C , COLLECTOR CURRENT (mA) Typical Thermal Resistance (Note 2) RΘJA LMBT4401LT1 UNIT 1 LMBT4401LT1 UNIT 2 10 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH Marking Code h ie, INPUT IMPEDANCE (kΩ) h fe, CURRENT GAIN MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 50 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase200 half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% h oe , OUTPUT ADMITTANCE ( µmhos) 300 1.0 2.0 3.0 7.0 5.0 10 0.5 mAmps 10 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance 10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT4401LT1 THRU Purpose Transistor FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features offers • Batch process design, excellent power dissipation STATIC CHARACTERISTICS better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 3.0 , NORMALIZED CURRENT GAIN • Low power loss, high efficiency. V CE= 1.0 V current capability,Vlow=10 forward voltage drop. • High2.0 V • High surge capability. CE • Guardring for overvoltage protection. • Ultra1.0high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free 0.7 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. T J = 125°C 0.071(1.8) 0.056(1.4) 25°C MIL-STD-19500 /228 • RoHS0.5product for packing code suffix "G" –55°C Halogen free product for packing code suffix "H" 0.3 Mechanical data FE 0.040(1.0) 0.024(0.6) h : UL94-V0 rated flame retardant • Epoxy 0.2 plastic, • Case : Molded 0.1 0.2 0.3SOD-123H 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.031(0.8) 20Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 I , COLLECTOR CURRENT (mA) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) 70 100 20 0.031(0.8) 300 Typ. 500 Figure 15. DC Current Gain • Polarity : Indicated by cathode band 1.0 Position : Any • Mounting • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) T J = 25°C 0.8 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ 0.6 ambient temperature unless otherwise specified. mA =1.0 mA Single phase half wave,I 60Hz, resistive of inductive 10 load. C For capacitive load, derate current by 20% 100mA 500mA 0.4 RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts 40 50 2.0 200 Volts 0.2 0 Maximum DC Blocking Voltage 0.02 0.03 0.05 0.07 0.1 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating Temperature Range 0.8 V, VOLTAGE ( VOLTS ) Storage Temperature Range V @ V CE =1.0 V -55 to +125 V CE(sat) @ I C /I B =10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0 10 20 50 10 100 20 150 30 50 1.0 30 Amps Amps ℃/W PF -55 to +150 θ VC for V CE(sat) - 65 to +175 0 ℃ ℃ – 0.5 –1.0 0.70 0.9 0.85 0.92 0.5 –1.5 mAmp 10 θ VB for V –2.0 Volts BE – 2.5 100 200 I C , COLLECTOR CURRENT (mA) Figure 17. “On” Voltages 2012-06 2012-11 80 7.0 40 120 0.50 IR @T A=125℃ 2- Thermal Resistance From Junction Ambient 0.1 0.2 0.5 1.0 to2.0 5.0 60 5.0 3.0 +0.5 VF 0.4 0.2 1.0 IO I B , BASE CURRENT (mA) Figure 16. Collector Saturation Region IFSM Maximum Average Reverse Current at @T A=25℃ NOTES: 0.7 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC 30 0.5 TSTG BE CHARACTERISTICS Rated DC Blocking Voltage 200.3 CJ V BE(sat) @ I C /I B =10 TJ T J = 25°C (Note 1) Typical Junction Capacitance 0.6 0.2 RΘJA 10 Resistance (Note 2) Typical Thermal VDC COEFFICIENT (mV/ °C) 0.01 50 C Method 2026 30 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 I C , COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT4401LT1 Purpose Transistor FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline SOT-23 .006(0.15)MIN. • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. .063(1.60) .047(1.20) • Low power loss, high efficiency. .122(3.10) • High current capability, low forward voltage drop. .106(2.70) • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of SOD-123H 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) .110(2.80) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , .080(2.04) • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.012(0.3) Typ. .083(2.10) Features .008(0.20) 0.031(0.8) Typ. 0.031(0.8) Typ. .003(0.08) .070(1.78) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS .055(1.40) .035(0.89) Ratings at 25℃ ambient .004(0.10)MAX. temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 12 .020(0.50) 20 .012(0.30) 13 30 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts IO Dimensions in inches and (millimeters) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA 0.037 0.95CJ TJ Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range 1.0 30 IFSM 0.037 0.95 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.079 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH VF Maximum Forward Voltage at 1.0A DC @T A=125℃ 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2012-11 0.70 0.85 0.5 0.035IR 0.9 NOTES: 2- Thermal Resistance From Junction to Ambient 2.0 0.50 0.9 0.92 10 0.031 0.8 Volts inches mm WILLAS ELECTRONIC CORP. mAmps