WILLAS FM120-M+ THRU 2N7002DW1T1 FM1200-M+ Small Signal MOSFET 115 mAmps,60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers N–Channel SOT-363 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to declare that the material of product are Halogen Free and optimize space. • Weboard loss, high efficiency. • Low power compliance with RoHS requirements. • High current capability, low forward voltage drop. • ESD Protected:1000V • High surge capability. • Pb-Free package is available for overvoltage protection. • Guardring switching. • Ultra high-speed RoHS product for packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 product for RATINGS packing code suffix "G" • RoHSMAXIMUM Halogen free product for packing code suffix "H" Rating Mechanical data Symbol Drain−Source Voltage VDSS : UL94-V0 rated flame retardant • Epoxy Voltage SOD-123H (RGS = 1.0 M) VDGR : Molded plastic, • CaseDrain−Gate , Drain :Plated Current terminals, solderable per MIL-STD-750 ID • Terminals ID − Continuous TC = 25°C (Note 1) Method 2026 − Continuous TC = 100°C (Note 1) Polarity−: Pulsed Indicated by2) cathode band (Note IDM • PositionVoltage : Any • Mounting Gate−Source Continuous • Weight −: Approximated 0.011 gram Value Unit 60 Vdc 60 Vdc ± 115 ± 75 ± 800 mAdc 0.031(0.8) Typ. ± 20 ± 40 VGS VGSM Vdc Vpk MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derateCHARACTERISTICS current by 20% THERMAL RATINGS Characteristic Marking Code Total Device Dissipation Maximum Recurrent Reverse Voltage PerPeak Device FR−5 Board (Note 1) Maximum RMS Voltage Maximum Average Forward Rectified Current Thermal Resistance, RJA Junction Peak Forward Surge Current to 8.3Ambient ms single half sine-wave superimposed onJunction rated load (JEDEC method) and Storage Temperature Range Typical Thermal Resistance (Note 2) D2 G1 1 0.040(1.0) 0.024(0.6) S1 0.031(0.8) Typ. S2 G2 D1 4 5 6 SymbolSYMBOL FM120-MH Max FM130-MH FM140-MH Unit FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 12 13 14 15 16 18 10 115 120 PD 380 mW 20 30 40 50 60 80 100 150 200 Volts VRRM 250 TA = 25°C Maximum DC Blocking Voltage Derate Above 25°C 2 Dimensions in inches and (millimeters) − Non−repetitive (tp ≤ 50 s) 3 TJ, Tstg Typical Junction Capacitance 1. FR−5 = 1.0 x(Note 0.75 1) x 0.062 in Operating Temperature Range Storage Temperature Range ORDERING INFORMATION VRMS 14 21 28 35 42 VDC 20 3.0 30 40 mW/°C 50 60 Device80 1.0 2N7002DW1T1 30 IO IFSM RΘJA CJ TJ 328 °C/W −55 to +150 °C 56 40 120 -55 to +125 70 100 Marking 702 140 Volts 150 Shipping 200 Volts 105 PF ℃ - 65 to +175 TSTG Amps ℃/W -55 to +150 Amps 3000 Tape & Reel ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 WILLAS ELECTRONIC CORP. 2012-0 WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2N7002DW1T1 FM1200-M+ Small Signal MOSFET 115 mAmps,60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features (TA = 25°C unless ELECTRICAL CHARACTERISTICS process design, excellent power dissipation offers otherwise noted) • Batch better reverse leakage current and thermal resistance. Characteristic SOD-123H Typ Min Symbol • Low profile surface mounted application in order to optimize board space. OFF CHARACTERISTICS • Low power loss, high efficiency. Drain–Source Breakdown Voltage capability, low forward voltage drop. • High(Vcurrent GS = 0, ID = 10 µAdc) capability. • High surge Zero Gatefor Voltage Drain Current TJ = 25°C overvoltage protection. • Guardring 60 Vdc) TJ = 125°C GS = 0, VDS = switching. • Ultra(Vhigh-speed epitaxial planar chip, metal silicon junction. • Silicon Gate–Body Leakage Current, Forward meet environmental standards of • Lead-free 20 Vdc) (VGS = parts 0.146(3.7) V(BR)DSS MIL-STD-19500 /228 = –product (VGSfree 20 Vdc)for packing code suffix "H" Halogen (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) Method 2026 Static Drain–Source • Polarity : Indicated byOn–State cathodeVoltage band (VGS = 10 Vdc, ID = 500 mAdc) • Mounting (VGS =Position 5.0 Vdc, I:DAny = 50 mAdc) • Weight : Approximated 0.011 gram Static Drain–Source On–State Resistance TC = 25°C (VGS = 10 V, ID = 500 mAdc) MAXIMUM RATINGS AND 125°C TC =ELECTRICAL (VGSambient = 5.0 Vdc, ID = 50 mAdc) Ratings at 25℃ temperature unless T otherwise C = 25°C specified. TC = 125°C Single phase half wave, 60Hz, resistive of inductive load. Forward For capacitive load, Transconductance derate current by 20% (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) DYNAMIC Marking Code RATINGS CHARACTERISTICS IGSSF – – 1 µAdc IGSSR – – -1 µAdc VGS(th) 1.0 – 500 – CHARACTERISTICS gFS 12 20 13 30 14 21 VDC 20 30 Storage Temperature Range BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage CHARACTERISTICS (IS =Voltage 11.5 mAdc, VGS Maximum Forward at 1.0A DC= 0 V) Maximum Average at @T A=25℃ SourceReverse CurrentCurrent Continuous (Body Diode) Rated DC Blocking Voltage NOTES: @T A=125℃ 16 60 28 15 50 Ciss 35 40 50oss C 60 42 2.0 – Vdc mA – – – – – – – – 7.5 13.5 7.5 13.5 80 – – TSTG – 18 80 Vdc Ohms mmhos 56 10 – 100 70 50 150 105 120 pF200 140 – 80 – 100 25 150 pF200 1.0 – 30 Crss CJ , I ^ 500 mAdc, (V DD = 25 Vdc D TLJ = 50 Ω, Vgen =-55 RG = 25 Ω, R 10to V)+125 Operating Temperature Range Turn–Off Delay Time 14 40 IO IFSM SWITCHING (Note 2.) Typical Thermal ResistanceCHARACTERISTICS (Note 2) RΘJA Typical Junction Capacitance (Note 1) Turn–On Delay Time 0.040(1.0) 0.024(0.6) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VRMS superimposed on rated load (JEDEC method) 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. rDS(on) Maximum DC Blocking Voltage Output Capacitance Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) µAdc 0.012(0.3) Typ. VDS(on) Dimensions in inches and (millimeters) – – 3.75 – – 0.375 Maximum RMS(V Voltage DS = 25 Vdc, VGS = 0, f = 1.0 MHz) Peak Forward Surge Current 8.3 ms single half sine-wave 1.0 500 – – ID(on) VRRM Vdc – – 0.031(0.8) Typ. Maximum Recurrent Peak Reverse Voltage Input Capacitance (VDSForward = 25 Vdc, VGS = Current 0, f = 1.0 MHz) Maximum Average Rectified – – Mechanical data (Note 2.) ON CHARACTERISTICS UL94-V0Voltage rated flame retardant • Epoxy Gate :Threshold = V , I µAdc) (V GS plastic, D = 250 SOD-123H • Case :DSMolded , On–State:Plated Drain Current • Terminals terminals, solderable per MIL-STD-750 Unit 600.130(3.3) IDSS Gate–Body Current, Reverse productLeakage for packing code suffix "G" • RoHS Max td(on) td(off) 40 120 – – - 65 to +175 115 Volts Volts Volts Amps – 5.0 pF Amps ℃/W – 20 -55 to +150 – 40 ns PF ns ℃ ℃ FM1150-MH FM1200-MH UNIT VSD FM160-MH – FM180-MH FM1100-MH – –1.5 Vdc SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH VF IR Source Current Pulsed 0.50 0.70 0.85 0.9 0.92 IS 0.5– 10 – –115 mAdc ISM – – –800 mAdc Volts mAmps 2.atPulse Pulse Width 300 µs, Duty Cycle ≤ 2.0%. 1- Measured 1 MHZTest: and applied reverse≤voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2N7002DW1T1 FM1200-M+ Small Signal MOSFET 115 mAmps,60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TYPICAL CHARACTERISTICSSOD-123H in orderELECTRICAL to • Low profile surface mounted application optimize board space. MIL-STD-19500 /228 1.0 • RoHS product for packing code suffix "G" 0.8 Halogen free product for packing code suffix "H" 0.6 Mechanical data VDS = 10 V 6V 5V 125°C 0.6 0.4 0.040(1.0) 0.024(0.6) 0.2 0.031(0.8) Typ. 10 0 1.0 Marking Code 9.0 10 1.2 RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH 1.0 Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 1.4 1.2 1.0 0.8 IO Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 0.4 superimposed on rated -o60 load (JEDEC -o20method) +o20 +o60 (°C) Typical Thermal Resistance (Note 2) T, TEMPERATURE R ΘJA Maximum Average Forward Rectified Current 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 2.2ambient temperature unless otherwise specified. Ratings at 25℃ VGS =60Hz, 10 V resistive of inductive load. Single phase half 2.0 wave, ID = 200 mA For capacitive load, derate current by 20% 1.8 1.6 0.031(0.8) Typ. Dimensions in inches and (millimeters) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) • Figure 1. Ohmic Region • Mounting Position : Any • Weight : Approximated 0.011 gram 25°C -o55°C 0.071(1.8) 0.056(1.4) MethodV2026 DS, DRAIN SOURCE VOLTAGE (VOLTS) Polarity : Indicated by cathode band 2.4MAXIMUM 0.012(0.3) Typ. 0.8 7V 0.4: UL94-V0 rated flame retardant • Epoxy 4V : Molded plastic, SOD-123H • Case0.2 3 V, 0 • Terminals terminals, solderable per MIL-STD-750 0 :Plated 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 0.146(3.7) 0.130(3.3) 1.0 ID, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) • Low power loss, high efficiency. current capability, low forward voltage drop. • High 2.0 TA = 25°C surge capability. • High 1.8 for overvoltage protection. • Guardring 1.6 VGS = 10 V • Ultra high-speed switching. 1.4 9V • Silicon epitaxial planar chip, metal silicon junction. 1.2 • Lead-free parts meet environmental standards of 8V 0.6 CJ Typical Junction Capacitance (Note 1) +o100 14 0.95 40 0.9 28 0.85 40 0.8 0.75 0.7 +o140 Figure 3. Temperature versus Static -55 to +125 Operating Temperature Range TJ Drain–Source On–Resistance Storage Temperature Range 15 50 16 60 18 80 10 100 115 150 120 200 Volts 35 42 56 70 105 140 Volts 50 60 80 100 150 200 Volts 1.0 30 -o60 -o20 +o20 +o60 (°C) T, TEMPERATURE 40 120 Figure versus Gate 4. Temperature -55 to +150 Amps Amps +o100 +o140 ℃/W PF ℃ Threshold Voltage - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2N7002DW1T1 FM1200-M+ Small Signal MOSFET 115 mAmps,60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. SOD-123H SOT−363 • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. .087(2.20) • Guardring for overvoltage protection. • Ultra high-speed switching. .071(1.80) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .004(0.10)MIN. .054(1.35) .045(1.15) MIL-STD-19500 /228 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , .030(0.75) • Terminals :Plated terminals, solderable per MIL-STD-750 .021(0.55) Method 2026 .071(1.80) .096(2.45) • RoHS product for packing code suffix "G" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .010(0.25) .003(0.08) • Polarity : Indicated by cathode band .056(1.40) • Mounting Position : Any .047(1.20) • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .016(0.40) 12 20 VRRM .004(0.10) 13 30 VRMS 14 21 VDC 20 30 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts Amps ℃/W PF ℃ - 65 to +175 0.50 0.0197 CHARACTERISTICS Amps -55 to +150 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ @T A=125℃ 0.50 0.70 0.85 0.5 IR 0.65 0.025 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 40 120 TJ Storage Temperature Range 1.0 30 SOLDERING -55 FOOTPRINT* to +125 Operating Temperature Range Rated DC Blocking Voltage 15 50 IO IFSM CJ Typical Junction Capacitance (Note 1) 14 40 Dimensions in inches and (millimeters) RΘJA Typical Thermal Resistance (Note 2) .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. .004(0.10)MAX. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 10 0.9 0.92 Volts mAmps 0.65 0.025 2- Thermal Resistance From Junction to Ambient 0.40 0.0157 1.9 0.0748 2012-06 2012-0 SCALE 20:1 mm inches WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. Small Signal MOSFET 115 mAmps,60 Volts 2N7002DW1T1 Ordering Information: Device PN 2N7002DW1T1G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-0 WILLAS ELECTRONIC CORP.