WILLAS FM120-M+ (6'$9: THRU Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Produc SOD-123+ PACKAGE Features General Features process design, excellent power dissipation offers • BatchDescription Package outline better reverse leakage and thermal resistance.z The ESDA6V1W6 is current monolithic suppressor 5 Unidirectional Transil functions SOD-123H • Low profile surface mounted application in order to designed to protect components connected to z Low leakage current: < 1 μA optimize board space. 0.146(3.7) Low power loss, high efficiency. • data and transmission lines against ESD. This z High integration 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. device clamps the voltage just above the logic z Pb-Free package is available • High surge capability. RoHS product for packing code suffix ”G” Guardring overvoltage protection. level •supply for for positive transients and to a diode 0.071(1.8) Ultra high-speed switching. • Halogen free product for packing code suffix0.056(1.4) “H” drop below ground for negative transients. • Silicon epitaxial planar chip, metal silicon junction. Applications • Lead-free parts meet environmental standards of Complies with the following standards MIL-STD-19500 /228 z Computers IEC61000-4-2 • RoHS product for packing code suffix "G" z Printers Halogen free product for packing code suffix "H" Level 4 15 kV (air discharge) Mechanical systems data z Communication 0.040(1.0) 8 kV(contact discharge) 0.024(0.6) UL94-V0handsets rated flameand retardant • Epoxy : phones z Cellular accessories MIL STD 883E - Method 3015-7 Class 3 plastic, SOD-123H • Case : Molded 0.031(0.8) Typ. 0.031(0.8) Typ. z Wireline and wireless telephone sets , 25 kV HBM (Human Body Model) • Terminals :Plated terminals, solderable per MIL-STD-750 z Set top boxes Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) FunctionalMAXIMUM diagramRATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 VDC 20 30 40 SOT-363 Maximum DC Blocking Voltage Absolute Ratings (Tamb=25°C ) Maximum Average Forward Rectified Current Symbol 15 50 16 60 10 100 115 150 120 200 35ESDA6V1W6 42 56 70 105 140 50 superimposed on rated load (JEDEC method) 100 150 200 = 8/20μs) CJ Storage Temperature Range TJ Operating Temperature Range Top -55 to +125 Operating Temperature Range Storage Temperature Range 80 1.0 Value 30 150 lead temperature for soldering during 10s RΘJA TypicalTJunction Capacitance (Note 1) stg 18 80 60 IO Parameter Peak Forward Surge Current 8.3 ms single half sine-wave PPP Peak PulseIFSM Power(tp Maximum L Typical T Thermal Resistance (Note 2) 14 40 40 120 -40 260 Units °C to +125 °C -40 to +125 °C -55 to +150 - 65 to +175 TSTG W Electrical Parameter Symbol CHARACTERISTICS Maximum Forward Voltage at 1.0A DC ParameterSYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Peak MaximumIPP Average Reverse CurrentReverse at @T A=25℃ Rated DCVBlocking Voltage Clamping C VF Pulse Current @T A=125℃ Voltage @ IPP IR 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: VRWM Working Peak Reverse Voltage Maximum Reverse Leakage Current @ IR 2- Thermal Resistance From Junction to Ambient V RWM IT Test Current 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. VBR IF Forward Current VF Forward Voltage @ IF 2012-06 2012-09 Breakdown Voltage @ IT WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ (6'$9: THRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Electrical Characteristics optimize board space. Low power loss, high efficiency. Part•Numbers VBR • High current capability, low forward voltage drop. IT • High surge capability. Min. Typ Max. • Guardring for overvoltage protection. • Ultra high-speedVswitching. V V mA • Silicon epitaxial planar chip, metal silicon junction. ESDA6V1W6 6.7 7.2 meet environmental standards of1 • Lead-free parts6.1 0.146(3.7) 0.130(3.3) VF C 0.012(0.3) Typ. VRwM IR V µA V mA 5 1 1.25 200 IF Max. Typ. 0v bias 0.071(1.8) 0.056(1.4) pF 35 MIL-STD-19500 /228 1.Square pulse IPPfor =15A,t 2.V p=2.5µs BR=aT*(Tamb-25°C)*VBR(25°C) product packing code suffix "G" • RoHS Halogen free product for packing code suffix "H" Typical Characteristics Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Fig1.Peak pulseRATINGS power versus exponential Fig2. Clamping voltage versus peak Marking Code j Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Pulse duration (T initial=25°C) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Storage Temperature Range 18 10 115 150 120 200 Waveform, tp=2.5μs) 35 42 56 70 105 140 100 150 200 50 60 80 1.0 30 40 120 -55 to +125 TJ Operating Temperature Range 16 IFSM CJ Typical Junction Capacitance (Note 1) 15 IO RΘJA Typical Thermal Resistance (Note 2) 14 pulse 40current 50 (Tj initial=25°C, 60 80 rectangular 100 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: 1- Fig Measured at 1 MHZ and applied reversereverse voltage of 4.0 VDC. 3 Capacitance Versus applied 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 voltage Fig 4 Peak Forward Voltage Drop versus forward current WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ (6'$9: THRU Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOT-363 Mechanical Data • Low profile surface mounted application in order to SOD-123H .004(0.10)MIN. optimize board space. .054(1.35) .045(1.15) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. .087(2.20) • Guardring for overvoltage protection. .071(1.80) • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 ..096(2.45) .071(1.80) • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 .030(0.75) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .010(0.25) .003(0.08) • Polarity : Indicated by cathode band .021(0.55) • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .056(1.40) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .047(1.20) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH .004(0.10)MAX. Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 .016(0.40) IO Peak Forward Surge Current 8.3 ms single half sine-wave .004(0.10) IFSM .043(1.10) .032(0.80) Maximum Recurrent Peak Reverse Voltage RΘJA Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG Dimensions inSYMBOL inches and (millimeters) FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH CHARACTERISTICS VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Marking Rated DC Blocking Voltage 0.50 0.85 0.5 IR @T A=125℃ 0.70 0.9 0.92 10 NOTES: Type number Marking code 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient ESDA6V1W6 2012-06 2012-09 W6 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.