WILLAS DAN217U

WILLAS
FM120-M+
THRU
DAN217U
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Package outline
Features
SWITCHING
DIODE
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FEATURES
• Low profile surface mounted application in order to
z
Small
surface
mounting
optimize
board
space. type
power
loss, highare
efficiency.
• Low
z
Two
diode
elements
connected in series
• High current capability, low forward voltage drop.
z
Pb-Free
package
is available
capability.
• High surge
RoHS
product
packing code
suffix ”G”
forfor
overvoltage
protection.
• Guardring
Ultra
high-speed
switching.
•
Halogen free product for packing code suffix “H”
• Silicon epitaxial planar chip, metal silicon junction.
z
Moisture
Sensitivity
Level 1
parts meet environmental standards of
• Lead-free
•
Pb Free Product
SOT-323
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
3
2
MARKING:A7
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method
Maximum Ratings
and2026
Electrical Characteristics, Single Diode @Ta=25 ℃
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
Parameter
Symbol
Limit
Unit
• Mounting Position : Any
• Weightvoltage
: Approximated 0.011 gram
80
Peak reverse
VRM
V
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
80
DC reverse voltage
VR
300
mA
Average forward current
100
mA
I
RATINGS
O
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking
Surge Code
current (1μs)
Maximum Recurrent Peak Reverse Voltage
VIFSM
RRM
12
20
13
30
14
40
Maximum RMS Voltage
VRMS
14
21
28
Power dissipation
Maximum
DC Blocking Voltage
D
VPDC
20
30
40
Maximum Average Forward Rectified Current
IO
Tj
IFSM
(10ms)
V
Ratings at 25℃ ambient temperature unless otherwise specified.
Maximum
forward
IFM
Single phase(peak)
half wave,
60Hz,current
resistive of inductive load.
For capacitive load, derate current by 20%
Junction temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed
on rated load (JEDEC method)
Storage temperature
RΘJA
Operating
temperature
range
Typical
Junction
Capacitance (Note
1)
TCopr
J
Storage Temperature Range
16
60
18
80
10
100
35
42
56
70
200
50
60
80
100
1000
1.0
30
-55~+150
40
120
-40~+100
-55 to +125
TJ
Operating Temperature Range
50
150
Tstg
Typical Thermal Resistance (Note 2)
15
400
115
120
200
Volt
105
140
Volt
mW150
200
Volt
Am
℃
Am
℃
-55 to +150
mA150
℃/W
℃
PF
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Maximum Forward Voltage
at 1.0A DC
ELECTRICAL
CHARACTERISTICS
(Ta=25℃
VF unless otherwise
0.50 specified)
0.70
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking
Voltage
Parameter
@T A=125℃
NOTES:
0.9
0.5
IR
Symbol
Test
conditions
10
Min
IR
VR=70V
0.2
μA
Forward voltage
VF
IF=100mA
1200
mV
2012-1
80
Unit
Reverse voltage leakage current
2012-06
Volt
mAm
Max
IR= 100μA
2- Thermal Resistance From Junction to Ambient
0.92
V(BR)
Reverseatbreakdown
voltage
1- Measured
1 MHZ and applied
reverse voltage of 4.0 VDC.
0.85
V
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
DAN217U
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Typical Characteristics
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
Forward
current capability,
low Characteristics
forward voltage drop.
• High
100
• High surge capability.
• Guardring for overvoltage protection.
high-speed switching.
• Ultra
30
• Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
10
Characteristics
(nA)
100
REVERSE CURRENT IR
: UL94-V0 rated flame retardant
• Epoxy
1
• Case : Molded plastic, SOD-123H
,
• Terminals
:Plated terminals, solderable per MIL-STD-750
0.3
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Ta=100℃
Ta
=2
5℃
Ta
=1
00
℃
0.146(3.7)
0.130(3.3)
300
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen
free product for packing code suffix "H"
3
Mechanical data
Reverse
1000
(mA)
IF
FORWARD CURRENT
•
SOD-123H
30
0.040(1.0)
0.024(0.6)
Ta=25℃
10
0.031(0.8) Typ.
0.031(0.8) Typ.
3
Method 2026
• Polarity
: Indicated by cathode band
0.1
0.0
0.2
0.4
0.6
0.8
: Any
• Mounting PositionFORWARD
VOLTAGE V (V)
• Weight : Approximated 0.011 gram
1.0
1
1.2
Dimensions in inches and (millimeters)
0
20
40
60
REVERSE VOLTAGE
F
VR
80
(V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
Maximum Average
Forward Rectified Current
1.2
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
0
RΘJA
Typical Thermal
Resistance (Note 2)
1.1
13
30
(mW)
VRRM
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Maximum Recurrent
Peak Reverse Voltage
1.3
12
20
PD
RATINGS
Marking Code
250
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
28
200
35
42
56
70
105
140
Volts
40
50
60
80
100
150
200
Volts
10
15
1.0
30
150
Amp
Amp
100
-55 to +125
TSTG
5
Power Derating Curve
300
Ta=25℃
SYMBOL f=1MHz
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
POWER DISSIPATION
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Capacitance Characteristics
1.4
For capacitive
load, derate current by 20%
50
0
20
40
120
℃/W
PF
-55 to +150
℃
- 65 to +175
0
25
50
75
℃
100
125
150
FM160-MH
FM180-MH FM1100-MH
FM1150-MH FM1200-MH UNIT
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
AMBIENT
TEMPERATURE
Ta (℃)
REVERSE VOLTAGE VR (V)
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
DAN217U
FM1200-M+
SOT-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Outline Drawing
SOD-123H
SOT-323
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
MIL-STD-19500 /228
Halogen free product for packing code suffix "H"
.087(2.20)
.054(1.35)
.045(1.15)
• Epoxy : UL94-V0 rated flame retardant
.070(1.80)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.096(2.45)
.078(2.00)
Mechanical data
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
.056(1.40)
Maximum DC Blocking Voltage
.010(0.25)
18
10
.003(0.08)
80
100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
0.012(0.3) Typ.
.047(1.20)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
VRRM
Operating Temperature Range
.004(0.10)MAX.
Storage Temperature Range
14
40
15
50
16
60
115
150
120
200
Volts
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
30
40
50
60
80
100
150
200
Volts
IO
IFSM
CJ
Typical Junction Capacitance (Note 1)
13
30
Volts
RΘJA
Typical Thermal Resistance (Note 2)
12
20
TJ
1.0
30
40
120
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
@T A=125℃
IR
.016(0.40)
NOTES:
.008(0.20)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.50
.043(1.10)
.032(0.80)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.70
0.85
0.5
0.9
0.92
Volts
10
mAm
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-1
WILLAS ELECTRONIC
Rev.D CORP.
WILLAS ELECTRONIC CORP.