WILLAS FM120-M+ THRU DAN217U FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FEATURES • Low profile surface mounted application in order to z Small surface mounting optimize board space. type power loss, highare efficiency. • Low z Two diode elements connected in series • High current capability, low forward voltage drop. z Pb-Free package is available capability. • High surge RoHS product packing code suffix ”G” forfor overvoltage protection. • Guardring Ultra high-speed switching. • Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. z Moisture Sensitivity Level 1 parts meet environmental standards of • Lead-free • Pb Free Product SOT-323 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1 MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 3 2 MARKING:A7 Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 Method Maximum Ratings and2026 Electrical Characteristics, Single Diode @Ta=25 ℃ Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Parameter Symbol Limit Unit • Mounting Position : Any • Weightvoltage : Approximated 0.011 gram 80 Peak reverse VRM V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 80 DC reverse voltage VR 300 mA Average forward current 100 mA I RATINGS O SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Surge Code current (1μs) Maximum Recurrent Peak Reverse Voltage VIFSM RRM 12 20 13 30 14 40 Maximum RMS Voltage VRMS 14 21 28 Power dissipation Maximum DC Blocking Voltage D VPDC 20 30 40 Maximum Average Forward Rectified Current IO Tj IFSM (10ms) V Ratings at 25℃ ambient temperature unless otherwise specified. Maximum forward IFM Single phase(peak) half wave, 60Hz,current resistive of inductive load. For capacitive load, derate current by 20% Junction temperature Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Storage temperature RΘJA Operating temperature range Typical Junction Capacitance (Note 1) TCopr J Storage Temperature Range 16 60 18 80 10 100 35 42 56 70 200 50 60 80 100 1000 1.0 30 -55~+150 40 120 -40~+100 -55 to +125 TJ Operating Temperature Range 50 150 Tstg Typical Thermal Resistance (Note 2) 15 400 115 120 200 Volt 105 140 Volt mW150 200 Volt Am ℃ Am ℃ -55 to +150 mA150 ℃/W ℃ PF ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Maximum Forward Voltage at 1.0A DC ELECTRICAL CHARACTERISTICS (Ta=25℃ VF unless otherwise 0.50 specified) 0.70 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Parameter @T A=125℃ NOTES: 0.9 0.5 IR Symbol Test conditions 10 Min IR VR=70V 0.2 μA Forward voltage VF IF=100mA 1200 mV 2012-1 80 Unit Reverse voltage leakage current 2012-06 Volt mAm Max IR= 100μA 2- Thermal Resistance From Junction to Ambient 0.92 V(BR) Reverseatbreakdown voltage 1- Measured 1 MHZ and applied reverse voltage of 4.0 VDC. 0.85 V WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU DAN217U FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Typical Characteristics • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. Forward current capability, low Characteristics forward voltage drop. • High 100 • High surge capability. • Guardring for overvoltage protection. high-speed switching. • Ultra 30 • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of • Lead-free 10 Characteristics (nA) 100 REVERSE CURRENT IR : UL94-V0 rated flame retardant • Epoxy 1 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.3 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Ta=100℃ Ta =2 5℃ Ta =1 00 ℃ 0.146(3.7) 0.130(3.3) 300 MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 3 Mechanical data Reverse 1000 (mA) IF FORWARD CURRENT • SOD-123H 30 0.040(1.0) 0.024(0.6) Ta=25℃ 10 0.031(0.8) Typ. 0.031(0.8) Typ. 3 Method 2026 • Polarity : Indicated by cathode band 0.1 0.0 0.2 0.4 0.6 0.8 : Any • Mounting PositionFORWARD VOLTAGE V (V) • Weight : Approximated 0.011 gram 1.0 1 1.2 Dimensions in inches and (millimeters) 0 20 40 60 REVERSE VOLTAGE F VR 80 (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current 1.2 IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 0 RΘJA Typical Thermal Resistance (Note 2) 1.1 13 30 (mW) VRRM CAPACITANCE BETWEEN TERMINALS CT (pF) Maximum Recurrent Peak Reverse Voltage 1.3 12 20 PD RATINGS Marking Code 250 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 28 200 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 10 15 1.0 30 150 Amp Amp 100 -55 to +125 TSTG 5 Power Derating Curve 300 Ta=25℃ SYMBOL f=1MHz FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI POWER DISSIPATION Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Capacitance Characteristics 1.4 For capacitive load, derate current by 20% 50 0 20 40 120 ℃/W PF -55 to +150 ℃ - 65 to +175 0 25 50 75 ℃ 100 125 150 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH AMBIENT TEMPERATURE Ta (℃) REVERSE VOLTAGE VR (V) VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU DAN217U FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOD-123H SOT-323 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 Halogen free product for packing code suffix "H" .087(2.20) .054(1.35) .045(1.15) • Epoxy : UL94-V0 rated flame retardant .070(1.80) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .004(0.10)MIN. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) .096(2.45) .078(2.00) Mechanical data MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code .056(1.40) Maximum DC Blocking Voltage .010(0.25) 18 10 .003(0.08) 80 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage 0.012(0.3) Typ. .047(1.20) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) VRRM Operating Temperature Range .004(0.10)MAX. Storage Temperature Range 14 40 15 50 16 60 115 150 120 200 Volts VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 Volts IO IFSM CJ Typical Junction Capacitance (Note 1) 13 30 Volts RΘJA Typical Thermal Resistance (Note 2) 12 20 TJ 1.0 30 40 120 -55 to +125 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT @T A=125℃ IR .016(0.40) NOTES: .008(0.20) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 .043(1.10) .032(0.80) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.70 0.85 0.5 0.9 0.92 Volts 10 mAm 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 WILLAS ELECTRONIC Rev.D CORP. WILLAS ELECTRONIC CORP.