WILLAS FM120-M+ BAS40V THRU FM1200-M+ SOT-563 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIER Diodes RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features SOT-563 • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SCHOTTKY BARRIER surfaceDIODE mounted application in order to • Low profile optimize board space. FEATURES • Low power loss, high efficiency. z Low• High Forward Voltage Drop current capability, low forward voltage drop. surge capability. • High z Fast Switching • Guardring for overvoltage protection. z Pb-Free package is available • Ultra high-speed switching. RoHS product for packing codemetal suffixsilicon ”G” junction. epitaxial planar chip, • Silicon Lead-free parts meet environmental standards • Halogen free product for packing code suffix “H”of MIL-STD-19500 /228 z Moisture Level 1 suffix "G" product for packing code • RoHS Sensitivity Halogen free product for packing code suffix "H" SOD-123H 0.146(3.7) 0.130(3.3) Marking: KAN Mechanical data • Polarity : Indicated by cathode band Non-Repetitive Reverse Position : Any Voltage • MountingPeak DC Blocking Voltage • Weight : Approximated 0.011 gram Symbol VRM 5 4 1 2 3 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Limit Unit Dimensions in inches and (millimeters) na Method 2026 Parameter 6 ry • Epoxy : UL94-V0 rated flame retardant : Molded plastic, SOD-123H • Case Maximum Ratings @Ta=25℃ , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 40 V 200 mA Pdspecified. Power RatingsDissipation at 25℃ ambient temperature unless otherwise 150 mW Single phase half wave, Junction 60Hz, resistive Thermal Resistance to of inductive load. RθJA For capacitive load, derate current by 20% Ambient 667 ℃/W IO mi Average Rectified Output Current VR Pr eli MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN 2SHUDWLQJ temperature Marking Code TJ 13 30 14 40 a125 Storage temperature range Voltage Maximum Recurrent Peak Reverse TVSTG RRM 12 20 15 16 -55~+150 50 60 Maximum RMS Voltage VRMS 14 21 28 35 42 56 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 ELECTRICAL CHARACTERISTICS (Ta=IO25℃ unless otherwise specified) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave Parameter superimposed on rated load (JEDEC method) Reverse breakdown Typical Thermal Resistancevoltage (Note 2) RΘJAV(BR) Typical Junction Capacitance (Note 1) Reverse voltage leakage current Operating Temperature Range Storage Temperature Range IFSM Symbol CJ TJ TSTG Forward voltage VF CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Total capacitance conditions μA IR= 10 10 100 1.0 30 Min 40 40 120 V-55 R=30V to +125 IF=1mA ℃150 115 120 200 Vo 70 105 140 Vo 100 150 200 Vo Am Max Unit Am ℃/ V PF 200 -55 to +150 - 65 to +175 380 I =40mA ℃ nA ℃ ℃ mV 1000 F SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Reverse recovery time IR Test 18 80 @T A=125℃ IR CT t rr 0.50 VR=0,f=1MHz IF=10mA, IR=IF=1mA RL=100Ω 0.70 0.85 5 0.9 pF 0.5 10 0.92 Vo 5 mA ns NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS40V THRU FM1200-M+ SOT-563 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERDiodes RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-563 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.071(1.8) 0.056(1.4) .024(0.60) .020(0.50) .067(1.70) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .059(1.50) Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) na 0.031(0.8) Typ. mi MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code 0.031(0.8) Typ. Dimensions in inches and (millimeters) Pr eli .043(1.10) .051(1.30) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .012(0.30) .004(0.10) ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.012(0.3) Typ. .067(1.70) .059(1.50) z 0.146(3.7) 0.130(3.3) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vo Maximum DC Blocking Voltage VDC 50 60 80 100 150 200 Vo Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Operating Temperature Range TJ .024(0.60) .020(0.50) Typical Junction Capacitance (Note 1) Storage Temperature Range CHARACTERISTICS 1.0 .007(0.16) .003(0.08) Am 30 40 120 -55 to +125 Am ℃ P -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage .011(0.27) 20 30 40 .007(0.17) @T A=125℃ 0.50 0.70 0.85 0.5 IR 0.9 0.92 Vo 10 mA NOTES: .067(1.70) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient .059(1.50) Dimensions in inches and (millimeters) 2012-06 2012-11 Rev.A CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS40V THRU FM1200-M+ SOT-563 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERDiodes RECTIFIERS -20V- 200V SOD-123+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1) low (2) forward voltage drop. BAS40V ‐T Tape&Reel: 3 Kpcs/Reel capability. G ‐WS • High surge Guardring for overvoltage protection. • Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ry 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. 0.031(0.8) Typ. na 0.012(0.3) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr eli mi WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximumand do vary in different applications and actual performance may vary over time. RMS Voltage VRMS V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or A Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A on rated load (JEDEC method) superimposed ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR m such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.