WILLAS FM120-M+ BAS16TW1T1 THRU FM1200-M+ SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SWITCHING DIODES better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. FEATURES • Low power loss, high efficiency. z Fast Switching Speed low forward voltage drop. current capability, • High High surge capability. • z For General Purpose Switching Applications • Guardring for overvoltage protection. z High Conductance high-speed switching. • Ultra z z z SOD-123H SOT-363 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Weight:0.05g • Silicon epitaxial planar chip, metal silicon junction. parts environmental standards • Lead-free RoHS product formeet packing code suffix "G" of MIL-STD-19500 /228 Halogen free product forcode packing code suffix "H" for packing suffix "G" • RoHS product Moisture Level 1 code suffix "H" HalogenSensitivity free product for packing Mechanical data MARKING: BAS16TW1T1: KA2· 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant : Molded@T plastic, SOD-123H • Case Maximum Ratings A=25℃ , • Terminals :Plated terminals, solderable per MIL-STD-750 Parameter Method 2026 0.031(0.8) Typ. Symbol Limits • Polarity Peak : Indicated by cathode Non-Repetitive reverse voltageband VRM 100 Position : Any voltage • MountingPeak Peak Repetitive reverse • Weight : Approximated 0.011 gram Working Peak Reverse Voltage VRRM VRWM 0.031(0.8) Typ. Unit Dimensions in inches and (millimeters) V 75 V VR DC Blocking MAXIMUM Voltage RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ Voltage ambient temperature unless otherwiseVspecified. RMS Reverse R(RMS) Single phase half wave, 60Hz, resistive of inductive load. IFM Forward Continuous Current For capacitive load, derate current by 20% IO Average Rectified Output Current RATINGS 300 mA 150 mA Maximum Recurrent Peak Reverse Voltage @=1.0s IFSM VRRM 12 20 13 30 2.0 14 40 1.0 15 50 16 60 18 80 10 A 100 115 150 120 200 Vo MaximumDissipation RMS Voltage Power VRMSPd 14 21 28 200 35 42 56 70 mW 105 140 Vol Maximum DC Blocking Voltage VDCR 20 30 40 50 60 80 100 K/W 150 200 Vol Thermal Resistance Junction to Ambient θJA Maximum Average Forward Rectified Current Junction temperature Peak Forward Surge Current 8.3 ms single half sine-wave Storage temperature superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Electrical Ratings @T A=25℃ Typical Junction Capacitance (Note 1) Storage Temperature Range CJ V (BR) R CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Forward voltage Maximum Average Reverse Current at @T A=25℃ @T A=125℃ NOTES: 2- Thermal Resistance From Junction to Ambient Reverse Recovery Time 2012-06 2012-1 1.0 30 -65~+150 +125 Max. Min. -55 to Typ. 75 Unit V ℃ Am 40 120 Am ℃ ℃/ - 65 to +175 PF -55 to +150 Conditions ℃ ℃ IR=10μA VF1 0.715FM150-MH V FM160-MH FM180-MH IF=1mA FM120-MH FM130-MH FM140-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL VF VF2 0.50 0.855 0.70 V 0.5 I0.85 F=10mA 1.0 V VF4 1.25 V IF=150mA IR1 1 μA VR=75V IR2 25 nA VR=20V CT 2 pF VR=0V,f=1MHz trr 4 ns 10 0.9 0.92 Vo VF3IR 1Measuredcurrent at 1 MHZ and applied reverse voltage of 4.0 VDC. Reverse Capacitance between terminals 625 150 RΘJA TSTG Reverse Breakdown Voltage Rated DC Blocking Voltage IO Tj T IFSM STG TJ Symbol Operating Temperature Range Parameter V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Peak surge current @=1.0μs Markingforward Code 53 IF=50mA mA IF=IR=10mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BAS16TW1T1 FM1200-M+ SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Typical • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of Characteristics 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vol Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vol Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vol Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Am Am ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Vol 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BAS16TW1T1 FM1200-M+ SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-363 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) .004(0.10)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .087(2.20) .054(1.35) .045(1.15) • Epoxy : UL94-V0 rated flame retardant .071(1.80) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .096(2.45) .071(1.80) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code .030(0.75) .021(0.55) .010(0.25) 18 10 .003(0.08) 80 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 42 56 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 .056(1.40) Maximum Average Forward Rectified Current .047(1.20) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 0.012(0.3) Typ. 115 150 120 200 Volt 70 105 140 Volt 100 150 200 Volt 1.0 30 40 120 -55 to +125 Am Am ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IR .016(0.40) .004(0.10) @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 .043(1.10) .032(0.80) VF Maximum Forward Voltage at 1.0A DC 0.70 0.85 0.5 0.9 0.92 Volt 10 mAm 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 WILLAS ELECTRONIC Rev.D CORP. WILLAS ELECTRONIC CORP.