WILLAS FM120-M+ THRU SD103ATW FM1200-M+ SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SCHOTTKY BARRIER better reverse leakageDIODE current and thermal resistance. Low profile surface mounted application in order to • FEATURES z z z z z SOT-363 SOD-123H optimize board space. Low Forward Voltage Drop power loss, high efficiency. • Low capability, low forward voltage Protection drop. • High current Guard Ring Construction for Transient • High surge capability. Fast Switching for overvoltage protection. • Guardring Low Leakage Current high-speed switching. • Ultra Silicon epitaxial planar chip, metal silicon junction. • Pb-Free package is available • Lead-free parts meet environmental standards of RoHS product for/228 packing code suffix ”G” MIL-STD-19500 RoHS product for packing suffix "G" • Halogen free product forcode packing code suffix “H” 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 6 5 4 1 2 3 Halogen free product for packing code suffix "H" z Moisture Sensitivity Level 1 Mechanical data 0.040(1.0) 0.024(0.6) ina ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H MARKING: KLL , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.031(0.8) Typ. 0.031(0.8) Typ. Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Parameter Symbol Limit Unit • Mounting Position : Any VRRM Peak Repetitive Peak Reverse Voltage • Weight : Approximated 0.011 gram im Working Peak Reverse Voltage VRWM 40 DC Blocking Voltage V R MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RMS Reverse Voltage VR(RMS) 28 Ratings at 25℃ ambient temperature unless otherwise specified. Forward Continuous Current Single phase half wave, 60Hz, resistive of inductive load. IFM For capacitive load, derate current by 20% Average Rectified Current IO V V 350 mA 175 mA Pr el FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U FM120-MH FM130-MH FM140-MH FM150-MH RATINGS Repetitive Peak Forward Current @t≤10ms SYMBOLIFSM 1 A Marking Code 12 13 14 15 16 18 10 115 120 Power Dissipation VRRM Maximum Recurrent Peak Reverse Voltage Pd 20 Thermal Resistance Maximum RMS Voltage Junction to Ambient air VRMS RθJA14 Operating Maximum DCTemperature Blocking Voltage VDC Tj 20 Storage Temperature Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Electrical Ratings @Ta=25℃ CHARACTERISTICS V (BR) Forward voltageVoltage at 1.0A DC Maximum Forward SYMBOL VF V F Maximum Average Reverse Current at @T A=25℃ @T A=125℃ IR NOTES: Capacitance between terminals CT 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Reverse recovery time 2012-06 2012-11 trr IR 200 50 60 500 35 28 40 -55~+125 50 30 Max 40 120 40 150 200 Vo 105 140 Vo 150 200 Vo ℃ Am Am -55 to +150 Unit 100 1.0 30 -55 to +125 mW 56 ℃/W70 ℃100 80 42 -55~+150 Typ 80 60 Symbol TSTG Min breakdown voltage Rated DC Blocking Reverse currentVoltage 21 RΘJA Typical Thermal Resistance (Note 2) Parameter Storage Temperature Range 40 IO TSTG IFSM Peak Forward Surge Current 8.3 ms single half sine-wave Reverse 30 - 65 to +175 Conditions V IR=100μA FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH IF=20mA 0.37 V 0.70 0.9 0.92 0.50 0.85 0.50 IF=100mA 2.0 5.0 50 10 0.5 μA pF ns VR=10V 10 ℃ P ℃ ℃ UN Vo mA VR=30V VR=0V,f=1.0MHz IF=IR=200mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SD103ATW FM1200-M+ SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-363 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .004(0.10)MIN. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .087(2.20) • Epoxy : UL94-V0 rated flame retardant .071(1.80) .054(1.35) .045(1.15) Mechanical data 0.040(1.0) 0.024(0.6) ina ry • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. .030(0.75) .021(0.55) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage .056(1.40) .047(1.20) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) VRRM .004(0.10)MAX. 13 30 14 40 15 50 16 60 80 100 115 150 120 200 Vo VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 Vo IO IFSM Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 12 20 Vo RΘJA Typical Thermal Resistance (Note 2) .010(0.25) .003(0.08) 18 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Pr el Marking Code .096(2.45) .071(1.80) im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.012(0.3) Typ. 1.0 30 40 120 -55 to +125 Am Am ℃/ P -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF .016(0.40) IR @T A=125℃ .004(0.10) Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: .043(1.10) .032(0.80) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.5 0.9 0.92 Vo 10 mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-11 Rev.D CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS SOT-363 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERDiodes RECTIFIERS -20V- 200V SOD-123+ FM120-M+ SD103ATWTHRU FM1200-M+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) low(2) forward voltage drop. • High current capability,(1) SD103ATW ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel capability. • High surge Guardring for overvoltage protection. • Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ina ry 0.012(0.3) Typ. 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr el im WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximumwhich may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximumand do vary in different applications and actual performance may vary over time. RMS Voltage VRMS V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or A Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A on rated load (JEDEC method) superimposed ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, P 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operatinglife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR m 10 @T A=125℃ Rated DCsuch applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.