WILLAS FM120-M+ BAS19 THRU BAS20FM1200-M+ SOT-23 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERDiodes RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SWITCHING DIODE better reverse leakage current and thermal resistance. Low profile surface mounted application in order to • FEATURES optimize board space. z Fast power loss, Speed high efficiency. • LowSwitching capability, low forward • High current z Surface Mount Package Ideally voltage Suiteddrop. for Automatic Insertion • High surge capability. z For General Purpose Switching Applications for overvoltage protection. • Guardring high-speed switching. • UltraConductance z High Silicon planar chip, metal silicon junction. • z Pb-Freeepitaxial package is available • Lead-free parts meet environmental standards of SOT-23 SOD-123H 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) 1 3 RoHS product for/228 packing code suffix ”G” MIL-STD-19500 RoHS product for packing suffix "G" • Halogen free product forcode packing code suffix “H” z 0.012(0.3) Typ. 2 Halogen free product forLevel packing1code suffix "H" Moisture Sensitivity Mechanical data 0.040(1.0) 0.024(0.6) Marking: BAS19 JP rated flame retardant : UL94-V0 • Epoxy : MoldedJR plastic, SOD-123H • Case BAS20 or A80 , • Terminals :Plated terminals, solderable per MIL-STD-750 Maximum Ratings @Ta=25℃ 0.031(0.8) Typ. ina ry 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band Parameter • Mounting Position : Any Non-Repetitive Reverse Voltage • Weight Peak : Approximated 0.011 gram Symbol VRM DC Blocking Voltage Dimensions in inches and (millimeters) BAS19 100 VR Unit BAS20 V 150 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Average Rectified Output Current I im O Ratings at 25℃ ambient temperature unless otherwise specified. Pd Single Dissipation phase half wave, 60Hz, resistive of inductive load. Power For capacitive load, derate current by 20% Thermal Resistance. Junction to Ambient RATINGS JunctionTemperature Marking Code RθJA 200 mA 200 mW 625 ℃/W SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U TJ 150 13 30 14 40 Maximum RMS Voltage VRMS 14 21 28 35 Maximum DC Blocking Voltage VDC 20 30 40 50 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Pr el VRRM 12 TSTG 20 Storage MaximumTemperature Recurrent Peak Range Reverse Voltage 15 16 -55~+150 50 60 ELECTRICAL (Ta=25℃ Maximum AverageCHARACTERISTICS Forward Rectified Current IO unless otherwise specified) Parameter superimposed on rated load (JEDEC method) RΘJA BAS19 Typical Thermal Resistancevoltage (Note 2) Reverse breakdown CJ Typical Junction Capacitance (Note 1) BAS20 Storage Temperature Range BAS19 TSTG Reverse voltage leakage current BAS20 CHARACTERISTICS V(BR) R I R= 100µA 115 150 120 200 V 42 56 70 105 140 Vo 60 80 100 150 200 Vo 1.0 30 Min conditions 40 100 120 -55 to +125 IR 10 100℃ 150 A Max ℃ P V -55 to +150 - 65 to +175 VR=100V A Unit 0.1 VR=150V µA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Voltage at 1.0A DC ForwardForward voltage Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Junction capacitance Test TJ Operating Temperature Range Symbol ℃ 18 80 @T A=125℃ VF IR CJ IF=100mA 0.50 IF=200mA 0.70 0.5 10 VR=0V, f=1MHz 1 1.25 0.85 5 0.9V 0.92 V pF m NOTES: Reveres time 1Measured recovery at 1 MHZ and applied reverse voltage of 4.0 VDC. trr IF=IR=30mA,Irr=0.1×IR 50 ns 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS19 THRU BAS20FM1200-M+ SOT-23 Plastic-Encapsulate 1.0A SURFACE MOUNT SCHOTTKY BARRIERDiodes RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing better reverse leakage current and thermal resistance. SOT-23 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) .063(1.60) .047(1.20) Halogen free product for packing code suffix "H" Mechanical data • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ry Method 2026 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli m RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VRRM 13 30 14 40 15 50 16 60 18 80 VRMS 14 21 28 35 42 56 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .004(0.10)MAX. CHARACTERISTICS VF @T A=125℃ NOTES: IR .020(0.50) .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient .003(0.08) 70 100 150 120 200 Vo 105 140 Vo 150 200 Vo 40 120 -55 to +125 Am Am ℃ P -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 100 1.0 30 TSTG Maximum Forward Voltage at 1.0A DC .008(0.20) 10 115 12 20 .080(2.04) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage.070(1.78) 0.50 0.70 0.85 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) ina Dimensions in inches and (millimeters) 0.9 0.92 Vo 10 mA Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.D CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.