WILLAS BAS19

WILLAS
FM120-M+
BAS19 THRU
BAS20FM1200-M+
SOT-23
Plastic-Encapsulate
1.0A SURFACE
MOUNT SCHOTTKY BARRIERDiodes
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
SWITCHING
DIODE
better
reverse leakage current and thermal resistance.
Low
profile
surface mounted application in order to
•
FEATURES
optimize board space.
z
Fast
power loss, Speed
high efficiency.
• LowSwitching
capability,
low forward
• High current
z
Surface
Mount
Package
Ideally voltage
Suiteddrop.
for Automatic Insertion
• High surge capability.
z
For
General
Purpose Switching Applications
for overvoltage protection.
• Guardring
high-speed switching.
• UltraConductance
z
High
Silicon
planar
chip, metal silicon junction.
•
z
Pb-Freeepitaxial
package
is available
• Lead-free parts meet environmental standards of
SOT-23
SOD-123H
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
1
3
RoHS
product for/228
packing code suffix ”G”
MIL-STD-19500
RoHS
product
for
packing
suffix "G"
•
Halogen
free product forcode
packing
code suffix “H”
z
0.012(0.3) Typ.
2
Halogen free
product forLevel
packing1code suffix "H"
Moisture
Sensitivity
Mechanical data
0.040(1.0)
0.024(0.6)
Marking:
BAS19
JP rated flame retardant
: UL94-V0
• Epoxy
: MoldedJR
plastic,
SOD-123H
• Case
BAS20
or A80
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Maximum Ratings @Ta=25℃
0.031(0.8) Typ.
ina
ry
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Parameter
• Mounting Position : Any
Non-Repetitive
Reverse Voltage
• Weight Peak
: Approximated
0.011 gram
Symbol
VRM
DC Blocking Voltage
Dimensions in inches and (millimeters)
BAS19
100
VR
Unit
BAS20
V
150
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Average Rectified Output Current
I
im
O
Ratings at 25℃ ambient temperature unless otherwise specified.
Pd
Single Dissipation
phase half wave, 60Hz, resistive of inductive load.
Power
For
capacitive
load,
derate
current
by
20%
Thermal Resistance. Junction to Ambient
RATINGS
JunctionTemperature
Marking Code
RθJA
200
mA
200
mW
625
℃/W
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
TJ
150
13
30
14
40
Maximum RMS Voltage
VRMS
14
21
28
35
Maximum DC Blocking Voltage
VDC
20
30
40
50
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
Pr
el
VRRM
12
TSTG
20
Storage
MaximumTemperature
Recurrent Peak Range
Reverse Voltage
15
16
-55~+150
50
60
ELECTRICAL
(Ta=25℃
Maximum AverageCHARACTERISTICS
Forward Rectified Current
IO unless otherwise specified)
Parameter
superimposed on rated load (JEDEC method)
RΘJA
BAS19
Typical
Thermal
Resistancevoltage
(Note 2)
Reverse
breakdown
CJ
Typical Junction Capacitance (Note 1)
BAS20
Storage Temperature Range
BAS19
TSTG
Reverse voltage leakage current
BAS20
CHARACTERISTICS
V(BR) R
I R= 100µA
115
150
120
200
V
42
56
70
105
140
Vo
60
80
100
150
200
Vo
1.0
30 Min
conditions
40 100
120
-55 to +125
IR
10
100℃
150
A
Max
℃
P
V
-55 to +150
- 65 to +175
VR=100V
A
Unit
0.1
VR=150V
µA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum
Voltage at 1.0A DC
ForwardForward
voltage
Maximum Average Reverse Current at @T A=25℃
Rated
DC Blocking
Voltage
Junction
capacitance
Test
TJ
Operating Temperature Range
Symbol
℃
18
80
@T A=125℃
VF
IR
CJ
IF=100mA
0.50
IF=200mA
0.70
0.5
10
VR=0V, f=1MHz
1
1.25
0.85
5
0.9V
0.92
V
pF
m
NOTES:
Reveres
time
1Measured recovery
at 1 MHZ and
applied reverse voltage of 4.0 VDC.
trr
IF=IR=30mA,Irr=0.1×IR
50
ns
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS19 THRU
BAS20FM1200-M+
SOT-23
Plastic-Encapsulate
1.0A SURFACE
MOUNT SCHOTTKY BARRIERDiodes
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
better reverse leakage current and thermal resistance.
SOT-23
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.122(3.10)
• Epoxy : UL94-V0 rated flame retardant
.106(2.70)
.063(1.60)
.047(1.20)
Halogen free product for packing code suffix "H"
Mechanical data
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
ry
Method 2026
0.071(1.8)
0.056(1.4)
.006(0.15)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Pr
eli
m
RATINGS
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VRRM
13
30
14
40
15
50
16
60
18
80
VRMS
14
21
28
35
42
56
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.004(0.10)MAX.
CHARACTERISTICS
VF
@T A=125℃
NOTES:
IR
.020(0.50)
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.003(0.08)
70
100
150
120
200
Vo
105
140
Vo
150
200
Vo
40
120
-55 to +125
Am
Am
℃
P
-55 to +150
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
100
1.0
30
TSTG
Maximum Forward Voltage at 1.0A DC
.008(0.20)
10
115
12
20
.080(2.04)
Maximum Recurrent Peak
Reverse Voltage
Maximum RMS Voltage.070(1.78)
0.50
0.70
0.85
0.5
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.083(2.10)
.110(2.80)
ina
Dimensions in inches and (millimeters)
0.9
0.92
Vo
10
mA
Dimensions in inches and (millimeters)
2012-06
2012-1
Rev.D CORP.
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.