WILLAS FM120-M+ BAT54V THRU FM1200-M+ SOT-563 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H profile surface mounted application in order to • Low SCHOTTKY BARRIER DIODE SOT-563 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. FEATURES • Guardring for overvoltage protection. high-speed switching. • Ultraschottky Surface mount barrier diode arrays Silicon epitaxial planar chip, metal silicon junction. • Pb-Free package is available • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) RoHS product for packing/228 code suffix ”G” MIL-STD-19500 6 5 4 1 2 3 productfor for packing code suffixsuffix "G" “H” • RoHS Halogen free product packing code Halogen free product for packing code suffix "H" Moisture Sensitivity Level 1 Mechanical data Method 2026 0.031(0.8) Typ. Dimensions in inches and (millimeters) Symbol Limit Unit 30 V IO 200 mA PD 150 mW mi VRRM Peak Repetitive Peak Reverse Voltage V RWM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Working Peak Reverse Voltage VR DC Ratings Blocking V oltage at 25℃ ambient temperature unless otherwise specified. Single Rectified phase half Output wave, 60Hz, resistive of inductive load. Average Current For capacitive load, derate current by 20% Pr eli RATINGS 0.031(0.8) Typ. na Maximum Ratings @Ta=25℃ • Polarity : Indicated by cathode band • Mounting Position : Any Parameter • Weight : Approximated 0.011 gram Power Dissipation 0.040(1.0) 0.024(0.6) ry • Epoxy : UL94-V0 rated flame retardant Marking: KAV • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 30 14 40 15 50 667 16 VRRM 12 20 RθJA13 Maximum Recurrent Peak Reverse Voltage 60 18 80 10 100 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 VDC 20 TSTG30 40 50 80 100 MarkingResistance Code Thermal Junction to Ambient Junction Temperature Maximum DC Blocking Voltage 2SHUDWLQJStorage Temperature Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 125 60 -65-125 IO Maximum Average Forward Rectified Current TJ IFSM Symbol TSTG Parameter Storage Temperature Range Reverse breakdown voltage CHARACTERISTICS Maximumvoltage Forward Voltage DC Reverse leakagate1.0A current IR= 100μA VFIR VR=25V @T A=125℃ Forward NOTES: voltage IR VF 2- Thermal Resistance From Junction to Ambient Reverse recovery time 2012-06 2012-11 140 ℃ 150 200 -55 to +150 - 65 to +175 Max Min 30 0.50 Unit V 0.70 CT t rr 20.85 0.5 IF=1mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Total capacitance 105 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Test conditions V(BR) 120 200 40 120 -55 to +125 TJ 150 1.0 30 Typical Thermal Resistance (Note 2) RΘJA ELECTRICAL (Ta=25℃CJunless otherwise specified) Typical JunctionCHARACTERISTICS Capacitance (Note 1) Operating Temperature Range ℃/W 115 10 IF=30mA 500 IF=100mA 1000 RL=100Ω 0.92 400 10 IF=10mA, IR=10mA~1mA 0.9 320 IF=10mA VR=1V,f=1MHz uA 5 mV pF ns WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAT54V THRU FM1200-M+ SOT-563 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-563 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) .024(0.60) .020(0.50) .067(1.70) .059(1.50) .012(0.30) .004(0.10) Mechanical data 0.040(1.0) 0.024(0.6) ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. .067(1.70) .059(1.50) na MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Operating Temperature Range TJ .024(0.60) .020(0.50) Typical Junction Capacitance (Note 1) Storage Temperature Range 12 20 13 30 14 21 14 40 .011(0.27) 20 30 .007(0.17) 15 50 CHARACTERISTICS 16 60 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 .007(0.16) 1.0 .003(0.08) 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.031(0.8) Typ. Dimensions in inches and (millimeters) mi .043(1.10) .051(1.30) Method 2026 0.012(0.3) Typ. @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 NOTES: .067(1.70) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .059(1.50) 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-11 Rev.A COR WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAT54V THRU FM1200-M+ SOT-563 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1) low (2) forward voltage drop. BAT54V ‐T Tape&Reel: 3 Kpcs/Reel capability. G ‐WS • High surge Guardring for overvoltage protection. • Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ry 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. 0.031(0.8) Typ. na 0.012(0.3) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr eli mi WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximumwhich may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage Vo VRRM Vo 14 21 28 35 42 56 70 105 140 Maximumand do vary in different applications and actual performance may vary over time. RMS Voltage VRMS Vo Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Am Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am on rated load (JEDEC method) superimposed ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, P 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operatinglife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Vo 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mA 10 @T A=125℃ Rated DCsuch applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.