SCS461F(SOT 323)

WILLAS
FM120-M+
SCS461F THRU
FM1200-M+
SOT-323
Plastic-Encapsulate
Diodes -20V- 200V
1.0A SURFACE
MOUNT SCHOTTKY BARRIER RECTIFIERS
Pb Free Produc
SOD-123+ PACKAGE
Package outline
SCHOTTKY
BARRIER DIODE
Features
• Batch process design, excellent power dissipation offers
FEATURES
SOT-323
better reverse leakage current and thermal resistance.
surface mounted application in order to
• Low profile
Low-power
rectification
optimize board space.
For switching
power
supply
loss, high efficiency.
• Low power
• High
Ultra low
VFcurrent capability, low forward voltage drop.
• High surge capability.
IF=0.7A guaranteed despite the size
• Guardring for overvoltage protection.
Pb-Free
package
is available
high-speed
switching.
• Ultra
RoHS •product
packing
code chip,
suffixmetal
”G” silicon junction.
Siliconfor
epitaxial
planar
parts
environmental
of
• Lead-free
Halogen
free product
formeet
packing
code suffix standards
“H”
MIL-STD-19500 /228
Moisture
Sensitivity
Level
1 code suffix "G"
product for
packing
• RoHS
Halogen free product for packing code suffix "H"
z
z
z
z
z
z
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
3
2
Mechanical data
MARKING: 3B
• Epoxy : UL94-V0 rated flame retardant
: Molded
plastic, SOD-123H
Maximum• Case
Ratings
@Ta=25℃
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Parameter
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Symbol
Limit
Unit
VRM
25
V
VR
20
V
• Polarity : Indicated by cathode band
• Mounting Position : Any
Non-Repetitive Peak Reverse Voltage
• Weight : Approximated 0.011 gram
DC Blocking Voltage
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
700
mA
IO
Average Rectified Output Current
Ratings at 25℃ ambient temperature unless otherwise specified.
150
Power
Dissipation
Single
phase half wave, 60Hz, resistive of inductivePload.
D
For
capacitive
load,
derate
current
by
20%
TJ
mW
℃
-55~+125
Operating Temperature
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
TSTG
Storage
Range
MarkingTemperature
Code
℃
-55 ~+150
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
13
30
21
14
40
15
50
16
60
18
80
10
100
115
150
120
200
28
35
42
56
70
105
140
60
80
100
150
200
ELECTRICAL
CHARACTERISTICS
(Ta=25℃
specified)
Maximum DC Blocking
Voltage
20otherwise
30
40
50
VDCunless
IO
Maximum Average Forward Rectified Current
Parameter
Symbol
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Reverse breakdown voltage
IFSM
V(BR)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
IR
Reverse voltage leakage current
Operating Temperature Range
Storage Temperature Range
CJ
TJ
TSTG
Forward
voltage
VF
CHARACTERISTICS
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
conditions
IR= 200 μA
=
V-55
R 20V
to +125
Min
20
40
120
200
Unit
V 0.49
μA -55 to +150
- 65 to +175
IF=700mA
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Test
1.0
Max 30
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SCS461F THRU
FM1200-M
SOT-323
Plastic-Encapsulate
Diodes -20V- 200V
1.0A SURFACE
MOUNT SCHOTTKY BARRIER RECTIFIERS
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-freeForward
Characteristics
0.146(3.7)
0.130(3.3)
Typical Characteristics
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
Ta=100 ℃
REVERSE CURRENT IR
T=
a 10
0
FORWARD CURRENT
℃
(uA)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
10
Characteristics
1000
T=
a 25
℃
100
0.071(1.8)
0.056(1.4)
Reverse
10000
Mechanical data
IF
(mA)
700
0.012(0.3) Typ.
0.031(0.8) Typ.
100
10
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Ta=25 ℃
1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
Marking Code
10
15
REVERSE VOLTAGE
VR
20
(V)
12
20
13
30 200
14
40
15
Power 16
Derating18Curve 10
50
60
80
100
115
150
120
200
Maximum RMS Voltage
=25℃
a
VTRMS
14
21
28
35
42
Maximum
DC Blocking Voltage
250
VDC
20
30
40
50
60
f=1MHz
IFSM
RΘJA
150Thermal Resistance (Note 2)
Typical
CJ
Typical Junction Capacitance (Note 1)
100
Storage Temperature Range
TSTG
CHARACTERISTICS
VF
Maximum
Average Reverse Current at @T A=25℃
0
5
70
105
140
80
100
150
200
100
40
120
-55 to +150
- 65 to +175
50
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
0
56
1.0
30
150
-55 to +125
TJ
Operating Temperature Range
50
(mW)
IO
PD
CAPACITANCE BETWEEN TERMINALS
CT (pF)
VRRM
Capacitance Characteristics
superimposed on rated load (JEDEC method)
5
Maximum
Recurrent Peak Reverse Voltage
300
200
Peak Forward
Surge Current 8.3 ms single half sine-wave
0
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Average Forward Rectified Current
0.1
POWER DISSIPATION
Ratings
1 at 25℃ ambient temperature unless otherwise specified.
0
100
200
300
400
500
Single phase half wave, 60Hz, resistive of inductive load.
FORWARD VOLTAGE VF (mV)
For capacitive load, derate current by 20%
10
15
@T A=125℃
Rated DC Blocking Voltage
REVERSE VOLTAGE V
(V)
R
IR
0.50
20
0
0
0.70
25
50
0.9
0.85
0.5
10
0.92
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SCS461F THRU
FM1200-M+
SOT-323
Plastic-Encapsulate
Diodes -20V- 200V
1.0A SURFACE
MOUNT SCHOTTKY BARRIER RECTIFIERS
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
better reverse leakage current and thermal resistance.
SOT-323
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
.004(0.10)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.012(0.3) Typ.
.087(2.20)
.054(1.35)
.045(1.15)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H.070(1.80)
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.096(2.45)
.078(2.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
.056(1.40)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
.010(0.25)
16
18
.003(0.08)
60
80
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
.047(1.20)
Maximum DC Blocking Voltage
VRRM
12
20
13
30
14
40
15
50
VRMS
14
21
28
35
42
VDC
20
30
40
50
60
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.004(0.10)MAX.
Storage Temperature Range
115
150
120
200
56
70
105
140
80
100
150
200
1.0
30
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
10
100
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
.016(0.40)
.008(0.20)
@T A=125℃
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
IR
0.50
.043(1.10)
.032(0.80)
VF
Maximum Forward Voltage at 1.0A DC
0.70
0.85
0.9
0.92
0.5
10
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-11
Rev.D CORP
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SCS461FTHRU
FM1200-M+
SOT-323
Diodes-20V- 200V
1.0A SURFACEPlastic-Encapsulate
MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123+
Pb Free Product
PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2) forward voltage drop.
SCS461F ‐T
Tape&Reel: 3 Kpcs/Reel capability. G ‐WS • High surge
Guardring
for
overvoltage
protection.
•
Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximumwhich may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage
V
VRRM
V
14
21
28
35
42
56
70
105
140
Maximumand do vary in different applications and actual performance may vary over time. RMS Voltage
VRMS
V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or A
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
on rated load (JEDEC method)
superimposed
℃
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operatinglife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range
TJ
- 65 to +175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
10
@T A=125℃
Rated DCsuch applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage
NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.