WILLAS MMBD7000W

WILLAS
FM120-M+
MMBD7000W THRU
Dual Switching Diode
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
FEATURE
• Low profile surface mounted application in order to
optimize board space.
declare
that the material of product
z We
power loss, high efficiency.
• Low
compliance with RoHS requirements.
• High current capability, low forward voltage drop.
z Moisture Sensitivity Level 1
capability.
• High surge
ORDERING
INFORMATION
0.146(3.7)
0.130(3.3)
3
• Guardring for overvoltage protection.
Device
Marking
Shipping
switching.
• Ultra high-speed
• Silicon epitaxial planar chip, metal silicon junction.
M5C
MMBD7000W
3000/Tape & Reel
• Lead-free parts meet environmental standards of
0.071(1.8)
0.056(1.4)
1
2
Pb-FreeMIL-STD-19500
package is available
/228
RoHS product
for packing
code suffix
RoHS •product
for packing
code suffix
”G” "G"
free product
for packing
HalogenHalogen
free product
for packing
code code
suffixsuffix
“H” "H"
Mechanical
data DIODE)
MAXIMUM
RATINGS(EACH
SOT-323
Rating
Symbol
Value
: UL94-V0 rated flame retardant
• Epoxy
Reverse
Voltage
V
100
R
• Case : Molded plastic, SOD-123H
200
Forward Current
IF
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Peak Forward Surge Current
Method 2026
I FM(surge)
0.040(1.0)
0.024(0.6)
Unit
Vdc
mAdc
mAdc
500
• Polarity : Indicated by cathode band
Position : Any
• Mounting
Characteristic
Symbol
(1) gram
• Weight
: Approximated
0.011
Total Device
Dissipation
FR– 5 Board
PD
0.031(0.8) Typ.
1
Max
200
T A = 25°C
MAXIMUM RATINGS AND ELECTRICAL
1.6
Derate above 25°C
Ratings
25℃ ambient
temperature
unless otherwise
specified.
ThermalatResistance,
Junction
to Ambient
R θ JA
556
Derate above 25°C RATINGS
Thermal
Resistance, Junction to Ambient
Marking Code
Junction
and Storage
Maximum Recurrent
PeakTemperature
Reverse Voltage
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
THERMAL CHARACTERISTICS
Single
phase Dissipation
half wave, 60Hz, resistive of inductive
Total Device
P D load.
(2)
For
capacitive
load, derate
Alumina
Substrate,
T A = current
25°C by 20%
Unit
mW
ANODE
°C/W
mW
300
2.4
mW/°C
FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
SYMBOL FM120-MH
R θ JA
417
°C/W
12
13
14
15
16
18
10
115
120
T J , T stg
°C 40
20+150 30
50
60
80
100
150
200
Vo
VRRM –55 to
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Vo
DEVICEDC
MARKING
Maximum
Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Vo
IO
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM otherwise noted)(EACH DIODE)
ELECTRICAL CHARACTERISTICS (T A = 25°C unless
superimposed on rated load (JEDEC method)
Characteristic
Typical Thermal Resistance (Note 2)
OFFCHARACTERISTICS
Typical Junction Capacitance (Note 1)
Reverse Breakdown Voltage
Operating Temperature Range
(I (BR) = 100 µAdc)
Storage Temperature Range
Reverse Voltage Leakage Current
(V R = 50 Vdc)
CHARACTERISTICS
(V R = 100
Vdc) Voltage at 1.0A DC
Maximum
Forward
2
CATHODE
3
CATHODE/ANODE
CHARACTERISTICS
mW/°C
MMBD7000W=M5C
Maximum
Average Forward Rectified Current
0.012(0.3) Typ.
RΘJA
CJ
TJ
2012-1
Min
V (BR)
-55 to +125 100
Max
—
40
120
- 65 to +175
TSTG
A
A
Unit
℃
P
Vdc
-55 to +150
℃
℃
µ Adc
I RFM130-MH FM140-MH
— FM150-MH FM160-MH
1.0
FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL FM120-MH
VF
(V
R = 50 Vdc,125°C)
Maximum Average Reverse Current at @T A=25℃
IR
Forward Voltage
@T A=125℃
Rated DC Blocking Voltage
(I F = 1.0 mAdc)
NOTES:
(I F = 10 mAdc)
1- (I
Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
F = 100 mAdc)
2- Reverse
Thermal Resistance
RecoveryFrom
TimeJunction to Ambient
(I F = I R = 10 mAdc) (Figure 1)
Capacitance(VR=0V)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
Symbol
1.0
30
I R2
I R3
VF
0.50 —
—
0.70 3.0
100 0.5
10
0.85
0.9
0.92
Vo
Vdc
0.55
0.67
0.75
0.7
0.82
1.1
t rr
—
4.0
ns
C
—
1.5
pF
mA
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBD7000W THRU
Dual Switching Diode
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
2.0 k
surface mounted
application in order to
• Low profile 820
Ω
+10 V board space.
optimize
• Low power loss, high efficiency.
0.1µF
low forward
voltage drop.
• High current capability,
IF
100 µH
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
0.1 µF
DUT
planar chip, metal silicon junction.
• Silicon50epitaxial
50 Ω INPUT
Ω OUTPUT
SAMPLING
PULSE
parts meet environmental standards
of
• Lead-free
•
tp
tr
IF
t
0.146(3.7)
0.130(3.3)
t
10%
0.012(0.3) Typ.
90%
OSCILLOSCOPE
GENERATOR/228
MIL-STD-19500
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
i
IR
INPUT SIGNAL
V
t
rr
0.071(1.8)
0.056(1.4)
= 1.0 mA
R(REC)
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i R(REC) = 1.0 mA)
R
Mechanical data
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
0.040(1.0)
0.024(0.6)
retardant
• Epoxy : UL94-V0 rated flame
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
Notes: 3. t p » t rr
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Method 2026Figure 1. Recovery Time Equivalent Test Circuit
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gramCURVES APPLICABLE TO EACH CATHODE
10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
I F , FORWARD CURRENT (mA)
Ratings at 25℃ ambient temperature unless otherwise specified.
= 85°C of inductive load.
Single phase half wave, 60Hz,TAresistive
T A= –40°C
For capacitive 10
load, derate current by 20%
RATINGS
Maximum Recurrent
Peak Reverse Voltage
1.0
VRRM
12
20
Maximum RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
T A = 25°C
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
V F , FORWARD
superimposed on rated load (JEDEC
method) VOLTAGE (VOLTS)
13
30
Maximum Average
Forward Rectified Current
0.1
0.2
0.4
0.6
T A =125°C
1.0
Storage Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
C D , DIODE CAPACITANCE (pF)
Operating Temperature Range
18
80
10
100
115
150
120
200
Vo
28
0.01
35
42
56
70
105
140
Vo
40
50
60
80
100
150
200
Vo
T A =55°C
T A =25°C
1.0
30
40
20
30
V R , REVERSE VOLTAGE (VOLTS)
0
10
Am
50
Am
Figure 3.40Leakage Current
120
-55 to +125
℃/
P
-55 to +150
℃
- 65 to +175
℃
0.64 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
0.50
0.70
0.85
0.5
IR
0.60
@T A=125℃
NOTES:
16
60
TSTG
Maximum Average Reverse Current at @T A=25℃
15
50
TJ
0.68
14
40
1.2
CJ
Typical Junction Capacitance (Note 1)
0.1
0.001
0.8
Typical Thermal ResistanceFigure
(Note 2) 2. Forward Voltage
RΘJA
Rated DC Blocking Voltage
T A =150°C
FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
T A =85°C
Marking Code
I R, REVERSE CURRENT ( µA)
100
0.9
0.92
Vo
10
mA
0.56
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.52
0
2.0
4.0
6.0
8.0
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBD7000W THRU
Dual Switching Diode
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
offers
• Batch process design, excellent power dissipationSOT-323
better reverse leakage current and thermal resistance.
SOD-123H
.004(0.10)MIN.
• Low profile surface mounted application in order to
optimize board space.
.054(1.35)
.045(1.15)
• Low power loss, high efficiency.
drop.
• High current capability, low forward voltage .087(2.20)
• High surge capability.
.070(1.80)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
.056(1.40)
• Terminals :Plated terminals, solderable
per MIL-STD-750
Method 2026
0.012(0.3) Typ.
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
.047(1.20)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.004(0.10)MAX.
RATINGS
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Maximum Recurrent Peak Reverse Voltage
.016(0.40)
12
.008(0.20)
20
VRRM
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
CHARACTERISTICS
-55 to +125
A
℃
P
-55 to +150
0.025
0.65
A
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.50
0.70
0.85
0.9
0.92
0.5
IR
10
0.075
1.9
NOTES:
40
120
0.025 TSTG
0.65
Storage Temperature Range
Rated DC Blocking Voltage
RΘJA
Typical Thermal Resistance (Note 2)
1.0
30
Dimensions
in inches and (millimeters)
V
m
0.035
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.9
0.028
0.7
inches
mm
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.