NCV8667 150 mA LDO Regulator with Enable, Reset and Early Warning The NCV8667 is 150 mA LDO regulator with integrated enable, reset and early warning functions dedicated for microprocessor applications. Its robustness allows NCV8667 to be used in severe automotive environments. The NCV8667 utilizes precise 1 MW internal resistor divider for Early Warning function which significantly reduces overall application quiescent current and number of external components. Very low quiescent current as low as 28 mA (Adjustable Early Warning Thresholds) or 42 mA (Preset Early Warning Thresholds) typical for NCV8667 makes it suitable for applications permanently connected to battery requiring very low quiescent current with or without load. The Enable function can be used for further decrease of quiescent current down to 1 mA. The NCV8667 contains protection functions as current limit, thermal shutdown and reverse output current protection. http://onsemi.com MARKING DIAGRAMS 8 8 1 1 • • • • • • • Output Voltage Options: 5 V Output Voltage Accuracy: $2% Output Current up to 150 mA Very Low Quiescent Current: − typ 28 mA for Adjustable Early Warning Threshold Option − typ 42 mA for Preset Early Warning Threshold Option Very Low Dropout Voltage Early Warning Threshold Accuracy: ±10% Over Temperature Range (using RSI_ext external resistor with ±1%, 100 ppm/°C) Enable Function (1 mA Max Quiescent Current when Disabled) Microprocessor Compatible Control Functions: − Reset with Adjustable Power−on Delay − Early Warning Wide Input Voltage Operation Range: up to 40 V Protection Features: − Current Limitation − Thermal Shutdown − Reverse Output Current These are Pb−Free Devices 667YZX ALYWX G 14 14 1 Features • • • • SO−8 D SUFFIX CASE 751 SO−14 D SUFFIX CASE 751A V8667YZXXG AWLYWWG 1 Y Z XX, X = Timing and Reset Threshold Option* = Early Warning Option* = Voltage Option 5.0 V (XX = 50, X = 5) A = Assembly Location WL, L = Wafer Lot Y = Year WW, W = Work Week G or G = Pb−Free Package *See Application Information Section. (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the dimensions section on page 18 of this data sheet. Typical Applications • • • • Body Control Module Instruments and Clusters Occupant Protection and Comfort Powertrain © Semiconductor Components Industries, LLC, 2011 May, 2011 − Rev. 2 1 Publication Order Number: NCV8667/D NCV8667 VBAT Cin 0.1 mF Vout Vin SI RSI_ext NCV8667yz** VDD Cout 2.2 mF Microprocessor DT OFF EN ON GND SO I/O RO RESET *RST_ext is optional ** z is 1, 2, 3, …, n Figure 1. Application Circuit (Preset Early Warning Thresholds) VBAT Cin 0.1 mF RSI2 RSI1 Vout Vin SI NCV8667y0 VDD Cout 2.2 mF Microprocessor DT OFF ON EN GND SO I/O RO RESET Figure 2. Application Circuit (Adjustable Early Warning Thresholds) http://onsemi.com 2 NCV8667 Vin Vout ** ** Driver with Current Limit RO RSI1 RSI2 EN Thermal Shutdown Vref Enable TIMING CIRCUIT and RESET OUTPUT DRIVER and SENSE OUTPUT DRIVER SO SI DT V ref * GND *Pull−down Resistor (~150 kW) active only in Reset State. ** 5 V option only. Figure 3. Simplified Block Diagram of NCV8667yz (z is 1, 2, 3, … , n) (Preset Early Warning Threshold options) Vin Vout ** ** Driver with Current Limit RO Thermal Shutdown EN Vref Enable TIMING CIRCUIT and RESET OUTPUT DRIVER and SENSE OUTPUT DRIVER SO SI DT V ref * GND *Pull−down Resistor (~150 kW) active only in Reset State. ** 5 V option only. Figure 4. Simplified Block Diagram of NCV8667y0 (Adjustable Early Warning Threshold options) http://onsemi.com 3 NCV8667 EN 1 8 1 14 SI Vin DT Vout GND GND SI SO GND GND EN RO GND GND GND Vout Vin DT GND SO RO SO−8 SO−14 Figure 5. Pin Connections (Top View) PIN FUNCTION DESCRIPTION Pin No. SO−8 Pin No. SO−14 Pin Name 3 1 EN Enable Input; low level disables the IC. 4 2 DT Reset Delay Time Select. Short to GND or connect to Vout to select time. 5 3, 4, 5, 6, 10, 11, 12 GND 6 7 RO Reset Output. 30 kW internal Pull−Up resistor connected to Vout. RO goes Low when Vout drops by more than 7% (typ.) from its nominal value 7 8 SO Early Warning Output. 30 kW internal Pull−Up resistor connected to Vout. It can be used to provide early warning of an impending reset condition. Leave open if not used. 8 9 Vout Regulated Output Voltage. Connect 2.2 mF capacitor with ESR < 100 W to ground. 1 13 Vin Positive Power Supply Input. Connect 0.1 mF capacitor to ground. 2 14 SI Adjustable Early Warning Threshold: Sense Input; If not used, connect to Vout. Preset Early Warning Threshold: Early Warning Adjust Input; connect RSI_ext against GND to adjust Input Voltage Early Warning Threshold or leave unconnected. See Electrical Characteristics Table and Application Information sections for more information. Description Power Supply Ground. http://onsemi.com 4 NCV8667 ABSOLUTE MAXIMUM RATINGS Symbol Min Max Unit Input Voltage DC (Note 1) Rating Vin −0.3 40 V Input Voltage Transient (Note 1) Vin − 45 V Input Current Iin −5 − mA Output Voltage (Note 2) Vout −0.3 5.5 V Output Current Iout −3 Current Limited mA Enable Input Voltage DC VEN −0.3 40 V Enable Input Voltage Transient VEN − 45 V Enable Input Current Range IEN −1 1 mA DT (Reset Delay Time Select) Voltage VDT −0.3 5.5 V DT (Reset Delay Time Select) Current IDT −1 1 mA Reset Output Voltage VRO −0.3 5.5 V Reset Output Current IRO −3 3 mA Sense Input Voltage DC VSI −0.3 40 V Sense Input Voltage Transient VSI − 45 V Sense Input Current ISI −1 1 mA Sense Output Voltage VSO −0.3 5.5 V Sense Output Current ISO −3 3 mA TJ(max) −40 150 °C TSTG −55 150 °C ESD Capability, Human Body Model (Note 3) ESDHBM −2 2 kV ESD Capability, Machine Model (Note 3) ESDMM −200 200 V TSLD − 265 peak °C Maximum Junction Temperature Storage Temperature Lead Temperature Soldering Reflow (SMD Styles Only) (Note 4) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area. 2. 5.5 or (Vin + 0.3 V), whichever is lower 3. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) 4. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D http://onsemi.com 5 NCV8667 THERMAL CHARACTERISTICS Rating Symbol Value Thermal Characteristics, SO−8 (Note 5) Thermal Resistance, Junction−to−Air (Note 6) Thermal Reference, Junction−to−Pin4 (Note 6) RθJA YψJP4 132 49 Thermal Characteristics, SO−14 (Note 5) Thermal Resistance, Junction−to−Air (Note 6) Thermal Reference, Junction−to−Pin4 (Note 6) RθJA YψJP4 94 18 Unit °C/W °C/W 5. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area. 6. Values based on copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate. OPERATING RANGES (Note 7) Rating Symbol Min Max Unit Input Voltage (Note 8) Vin 5.5 40 V Junction Temperature TJ −40 150 °C 7. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area. 8. Minimum Vin = 5.5 V or (Vout + VDO), whichever is higher. ELECTRICAL CHARACTERISTICS Vin = 13.2 V, VEN = 3 V, VDT = GND, VSI = Vout (NCV8667y0 only), RSI1, RSI2, RSI_ext not used, Cin = 0.1 mF, Cout = 2.2 mF, for typical values TJ = 25°C, for min/max values TJ = −40 °C to 150°C; unless otherwise noted. (Notes 9 and 10) Parameter Test Conditions Symbol Min Typ Max Unit 4.9 4.9 (−2 %) 5.0 5.0 5.1 5.1 (+2%) V 4.9 (−2 %) 5.0 5.1 (+2%) REGULATOR OUTPUT Output Voltage (Accuracy %) Vin = 5.6 V to 40 V, Iout = 0.1 mA to 100 mA Vin = 5.8 V to 16 V, Iout = 0.1 mA to 150 mA Vout Output Voltage (Accuracy %) TJ = −40°C to 125°C Vin = 5.8 V to 28 V, Iout = 0 mA to 150 mA Vout Line Regulation Vin = 6 V to 28 V, Iout = 5 mA Regline −20 0 20 mV Load Regulation Iout = 0.1 mA to 150 mA Regload −40 10 40 mV − − 225 300 450 600 Cout ESR 2.2 0.01 − − 100 100 μF W IDIS − − 1 μA Dropout Voltage (Note 11) VDO 5.0 V Iout = 100 mA Iout = 150 mA Output Capacitor for Stability (Note 12) Iout = 0 mA to 150 mA V mV DISABLE AND QUIESCENT CURRENTS Disable Current VEN = 0 V,TJ < 85°C Quiescent Current, Iq = Iin − Iout (Note 13) Adjustable EW Threshold Option: Iout = 0.1 mA, TJ = 25°C Iout = 0.1 mA to 150 mA, TJ ≤ 125°C Preset EW Threshold Options: Iout = 0.1 mA, TJ = 25°C Iout = 0.1 mA to 150 mA, TJ ≤ 125°C Iq μA − − − − 28 − 42 35 37 49 50 CURRENT LIMIT PROTECTION Current Limit Vout = 0.96 x Vout_nom ILIM 205 − 525 mA Short Circuit Current Limit Vout = 0 V ISC 205 − 525 mA 9. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 10. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TA [TJ. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 11. Measured when output voltage falls 100 mV below the regulated voltage at Vin = 13.2 V. 12. Values based on design and/or characterization. 13. Iq for Preset EW Threshold Options is measured when RSI_ext is not used. For typical values of Iq vs RSI_ext see Figure 27. 14. See APPLICATION INFORMATION section for Reset Threshold and Reset Delay Time Options http://onsemi.com 6 NCV8667 ELECTRICAL CHARACTERISTICS Vin = 13.2 V, VEN = 3 V, VDT = GND, VSI = Vout (NCV8667y0 only), RSI1, RSI2, RSI_ext not used, Cin = 0.1 mF, Cout = 2.2 mF, for typical values TJ = 25°C, for min/max values TJ = −40 °C to 150°C; unless otherwise noted. (Notes 9 and 10) Parameter Test Conditions Symbol Min Typ Max Unit VEN = 0 V, Iout = −1 mA Vout_rev − 2 5.5 V f = 100 Hz, 0.5 Vpp PSRR − 60 − dB − 2.5 − − 0.8 − − − 3 0.5 5 1 − 2 − − 0.8 − − − 1 90 93 96 VRH − 2.0 − %Vout IROmax 1.75 − − mA REVERSE OUTPUT CURRENT PROTECTION Reverse Output Current Protection PSRR Power Supply Ripple Rejection (Note 12) ENABLE Vth(EN) Enable Input Threshold Voltage Logic Low Logic High Enable Input Current Logic High VEN = 5 V Logic Low VEN = 0 V, TJ < 85 °C IEN_ON IEN_OFF V μA DT (Reset Delay Time Select) DT Threshold Voltage Vth(DT) Logic Low Logic High DT Input Current VDT = 5 V IDT Vout decreasing Vin > 5.5 V VRT V μA RESET OUTPUT RO Output Voltage Reset Threshold (Note 14) Reset Hysteresis Maximum Reset Sink Current Vout = 4.5 V, VRO = 0.25 V Reset Output Low Voltage Vout > 1 V, IRO < 200 mA %Vout VROL − 0.15 0.25 V Reset Output High Voltage VROH 4.5 − − V Integrated Reset Pull Up Resistor RRO 15 30 50 kW 6.4 102.4 (−20 %) 8 128 9.6 153.6 (+20 %) 16 25 38 Reset Delay Time (Note 14) Min time available, DT connected to GND Max time available, DT connected to Vout Reset Reaction Time (see Figure 29) tRD tRR ms μs EARLY WARNING (SI and SO) VSI(th) Sense Input Threshold (NCV8667y0) (Adjustable EW Threshold Option) High Low Early Warning Input Voltage Threshold (Preset EW Threshold Values) NCV8667y2 High Low Sense Input Current (NCV8667y0) (Adjustable EW Threshold Option) V 1.25 1.20 RSI1 = 480 kW, RSI2 = 520 kW (internal resistor divider values, see Figure 3) RSI_ext = 150 kW (±1%, ±100 ppm/°C) (external resistor value, see Figure 26) 1.40 1.33 Vin_EW(th) ISI VSI = 5 V 1.33 1.25 V 5.67 5.30 6.30 5.89 6.92 6.47 −1 0.1 1 μA 9. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 10. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TA [TJ. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 11. Measured when output voltage falls 100 mV below the regulated voltage at Vin = 13.2 V. 12. Values based on design and/or characterization. 13. Iq for Preset EW Threshold Options is measured when RSI_ext is not used. For typical values of Iq vs RSI_ext see Figure 27. 14. See APPLICATION INFORMATION section for Reset Threshold and Reset Delay Time Options http://onsemi.com 7 NCV8667 ELECTRICAL CHARACTERISTICS Vin = 13.2 V, VEN = 3 V, VDT = GND, VSI = Vout (NCV8667y0 only), RSI1, RSI2, RSI_ext not used, Cin = 0.1 mF, Cout = 2.2 mF, for typical values TJ = 25°C, for min/max values TJ = −40 °C to 150°C; unless otherwise noted. (Notes 9 and 10) Parameter Test Conditions Symbol Min Typ Max Unit RSO 15 30 50 kW VSOL − 0.15 0.25 V VSOH 4.5 − − V 1.75 − − EARLY WARNING (SI and SO) Integrated Sense Output Pull Up Resistor Sense Output Low Voltage VSI < 1.2 V, ISO < 200 mA, Vout > 1 V Sense Output High Voltage Maximum Sense Output Sink Current SI High to SO High Reaction Time (Adjustable EW Threshold Option NCV8667y0) SI Low to SO Low Reaction Time (Adjustable EW Threshold Option NCV8667y0) Vout = 4.5 V, VSI < 1.2 V, VSO = 0.25 V ISOmax tPSOLH VSI increasing μs − 7 12 tPSOHL VSI decreasing mA μs − 3.8 5.0 THERMAL SHUTDOWN Thermal Shutdown Temperature (Note 11) TSD 150 175 195 °C Thermal Shutdown Hysteresis (Note 11) TSH − 25 − °C 9. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 10. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TA [TJ. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 11. Measured when output voltage falls 100 mV below the regulated voltage at Vin = 13.2 V. 12. Values based on design and/or characterization. 13. Iq for Preset EW Threshold Options is measured when RSI_ext is not used. For typical values of Iq vs RSI_ext see Figure 27. 14. See APPLICATION INFORMATION section for Reset Threshold and Reset Delay Time Options http://onsemi.com 8 NCV8667 TYPICAL CHARACTERISTICS 300 31 Iq, QUIESCENT CURRENT (mA) Iq, QUIESCENT CURRENT (mA) 32 30 29 28 27 26 25 Vin = 13.2 V Iout = 100 mA 24 23 22 −40 −20 0 20 40 60 80 100 50 5 10 15 20 25 30 35 Figure 6. Quiescent Current vs. Temperature (NCV8667y0) Figure 7. Quiescent Current vs. Input Voltage (NCV8667y0) 5.10 32 31 30 Vout, OUTPUT VOLTAGE (V) TJ = 150°C TJ = −40°C 29 28 TJ = 25°C 27 26 25 24 23 Vin = 13.2 V 25 50 75 100 125 5.05 5.00 4.95 0 20 40 60 80 100 120 140 160 Iout, OUTPUT CURRENT (mA) TJ, JUNCTION TEMPERATURE (°C) Figure 8. Quiescent Current vs. Output Current (NCV8667y0) Figure 9. Output Voltage vs. Temperature 6 500 Iout = 1.0 mA 5 4 3 TJ = 25°C 2 1 TJ = −40°C TJ = 150°C 0 1 2 3 4 5 6 7 40 Vin = 13.2 V Iout = 100 mA 4.90 −40 −20 150 VDO, DROPOUT VOLTAGE (mV) Iq, QUIESCENT CURRENT (mA) 150 Vin, INPUT VOLTAGE (V) 22 0 Vout, OUTPUT VOLTAGE (V) 200 TJ, JUNCTION TEMPERATURE (°C) 33 0 250 0 0 100 120 140 160 Iout = 0 mA TJ = 25°C 400 TJ = 25°C 200 100 0 0 8 TJ = 150°C 300 TJ = −40°C 25 50 75 100 125 Vin, INPUT VOLTAGE (V) Iout, OUTPUT CURRENT (mA) Figure 10. Output Voltage vs. Input Voltage Figure 11. Dropout vs. Output Current http://onsemi.com 9 150 NCV8667 TYPICAL CHARACTERISTICS 400 400 ILIM, ISC, CURRENT LIMIT (mA) VDO, DROPOUT VOLTAGE (mV) 500 Iout = 150 mA 300 Iout = 100 mA 200 100 0 −40 −20 0 20 40 60 80 ILIM @ Vout = 4.8 V 200 100 0 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) Vin, INPUT VOLTAGE (V) Figure 12. Dropout vs. Temperature Figure 13. Output Current Limit vs. Input Voltage 400 100 Vin = 13.2 V ESR, STABILITY REGION (W) ILIM, ISC, CURRENT LIMIT (mA) 300 0 100 120 140 160 TJ = 25°C ISC @ Vout = 0 V 350 ISC @ Vout = 0 V 300 ILIM @ Vout = 4.8 V 250 200 −40 −20 0 20 40 60 80 Vin = 13.2 V TJ = −40°C to 150°C Cout = 2.2 mF − 100 mF 10 STABLE REGION 1 0.1 0.01 100 120 140 160 40 0 50 100 150 200 250 300 350 TJ, JUNCTION TEMPERATURE (°C) Iout, OUTPUT CURRENT (mA) Figure 14. Output Current Limit vs. Temperature Figure 15. Cout ESR Stability vs. Output Current 14.2 V Vin (1 V/div) TJ = 25°C I Iout = 1 mA Cout = 10 mF trise/fall = 1 ms (Vin) 13 V Iout (100 mA/div) TJ = 25°C Vin = 13.2 V Cout = 10 mF trise/fall = 1 ms (Iout) 150 mA 12.2 V 0.1 mA 5.16 V 5.09 V 5V Vout (50 mV/div) 5V Vout (200 mV/div) 4.97 V 4.77 V TIME (100 ms/div) TIME (20 ms/div) Figure 16. Line Transients Figure 17. Load Transients http://onsemi.com 10 NCV8667 TYPICAL CHARACTERISTICS 100 TJ = 25°C RSI_ext = 150 kW Rout = 5 kW Vin (5 V/div) TJ = 25°C Vin = 13.2 V $0.5 VPP Cout = 2.2 mF Iout = 1 mA 90 80 PSRR (dB) 70 Vout (5 V/div) 60 50 40 VRO (5 V/div) 30 VSO (5 V/div) 10 20 0 TIME (100 ms/div) 10 100 1 IDIS, DISABLE CURRENT (mA) IDIS, DISABLE CURRENT (mA) Vin = 13.2 V VEN = 0 V 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −40 −20 TJ = 150°C 0.6 0.4 0.2 Figure 20. Disable Current vs. Temperature TJ = 125°C TJ = 85°C 5 VRT, RESET THRESHOLD (V) 4.80 40 TJ = 150°C TJ = 25°C 20 TJ = −40°C 10 Vin = 13.2 V 0 5 10 15 20 25 30 35 10 15 20 25 30 VIN, INPUT VOLTAGE (V) 35 40 Figure 21. Disable Current vs. Input Voltage 50 IEN, ENABLE CURRENT (mA) VEN = 0 V 0.8 0 0 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) 30 100000 Figure 19. PSRR vs. Frequency 2 1.8 10000 f, FREQUENCY (Hz) Figure 18. Power Up and Down Transient 0 1000 40 Vin = 13.2 V 4.75 4.70 4.65 4.60 −40 −20 VEN, ENABLE VOLTAGE (V) 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) Figure 23. Reset Threshold vs. Temperature Figure 22. Enable Current vs. Enable Voltage http://onsemi.com 11 NCV8667 TYPICAL CHARACTERISTICS 1.36 120 SENSE INPUT VOLTAGE (V) VDT = Vout Vin = 13.2 V 100 80 60 40 20 VDT = GND 0 −40 −20 0 20 40 60 80 100 120 140 160 INPUT VOLTAGE EW THRESHOLD LOW (V) 1.32 1.3 1.28 1.26 VSI_(th),L (VSI Decreasing) 1.24 1.22 −40 −20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 24. Reset Time vs. Temperature (NCV86671z) Figure 25. SI Threshold vs. Temperature (NCV8667y0) 12 TJ = 25°C 11 10 9 8 7 Vin_EW(th),L (Vin decreasing) 6 5 4 50 VSI_(th),H (VSI Increasing) 1.34 Iq&RSI_ext, QUIESCENT CURRENT (mA) tRD, RESET DELAY TIME (ms) 140 75 100 125 150 175 200 RSI_ext, (kW) (E24 Series) 225 250 55 Vin = 13.2 V TJ = 25°C 54 53 52 51 50 49 48 47 46 45 50 75 125 175 100 150 200 RSI_ext, (kW) (E24 Series) 225 250 Figure 27. Quiescent Current vs. RSI_ext (Including IRSI_ext, Calculated Using E24 Series) Figure 26. Input Voltage EW Threshold Low vs. RSI_ext (Calculated Using E24 Series) http://onsemi.com 12 NCV8667 Vin t Vout <tRR VRT+VRH VRT VRO t tRR tRD VROH VROL t Figure 28. Reset Function and Timing Diagram Vin Vin_EW(th)_L t V out V RT t V RO t VSO tWarning Figure 29. Input Voltage Early Warning Function Diagram http://onsemi.com 13 t NCV8667 DEFINITIONS General All measurements are performed using short pulse low duty cycle techniques to maintain junction temperature as close as possible to ambient temperature. the device is capable to supply minimum 200 mA without sending Reset signal to microprocessor. Short Circuit Current Limit is output current value measured with output of the regulator shorted to ground. Output Voltage PSRR The output voltage parameter is defined for specific temperature, input voltage and output current values or specified over Line, Load and Temperature ranges. Power Supply Rejection Ratio is defined as ratio of output voltage and input voltage ripple. It is measured in decibels (dB). Line Regulation Line Transient Response The change in output voltage for a change in input voltage measured for specific output current over operating ambient temperature range. Typical output voltage overshoot and undershoot response when the input voltage is excited with a given slope. Load Regulation Load Transient Response The change in output voltage for a change in output current measured for specific input voltage over operating ambient temperature range. Typical output voltage overshoot and undershoot response when the output current is excited with a given slope between low−load and high−load conditions. Dropout Voltage Thermal Protection The input to output differential at which the regulator output no longer maintains regulation against further reductions in input voltage. It is measured when the output drops 100 mV below its nominal value. The junction temperature, load current, and minimum input supply requirements affect the dropout level. Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When activated at typically 175°C, the regulator turns off. This feature is provided to prevent failures from accidental overheating. Quiescent Current The power dissipation level is maximum allowed power dissipation for particular package or power dissipation at which the junction temperature reaches its maximum operating value, whichever is lower. Maximum Package Power Dissipation Quiescent Current (Iq) is the difference between the input current (measured through the LDO input pin) and the output load current. Current Limit and Short Circuit Current Limit Current Limit is value of output current by which output voltage drops below 96% of its nominal value. It means that http://onsemi.com 14 NCV8667 APPLICATIONS INFORMATION The NCV8667 regulator is self−protected with internal thermal shutdown and internal current limit. Typical characteristics are shown in Figures 6 to 29. RESET DELAY AND RESET THRESHOLD OPTIONS Input Decoupling (Cin) A ceramic or tantalum 0.1 mF capacitor is recommended and should be connected close to the NCV8667 package. Higher capacitance and lower ESR will improve the overall line and load transient response. If extremely fast input voltage transients are expected then appropriate input filter must be used in order to decrease rising and/or falling edges below 50 V/ms for proper operation. The filter can be composed of several capacitors in parallel. Part Number DT = GND Reset Time DT = Vout Reset Time Reset Threshold NCV86671z 8 ms 128 ms 93% NCV86675z 16 ms 32 ms 93% NOTE: The timing values can be selected from following list: 8, 16, 32, 64, 128 ms. The reset threshold values can be selected from the following list: 90% and 93%. Contact factory for other timing combinations not included in the table. Sense Input (SI) / Sense Output (SO) Voltage Monitor An on−chip comparator is available to provide early warning to the microprocessor of a possible reset signal (Figure 29). The Sense Output is from an open drain driver with an internal 30 kW pull up resistor to output Vout. The reset signal typically turns the microprocessor off instantaneously. This can cause unpredictable results with the microprocessor. The signal received from the SO pin will allow the microprocessor time (tWarning) to complete its present task before shutting down. This function is performed by a comparator referenced to the band gap voltage. The actual trip point of input voltage is programmed by internal resistor divider and external resistor RSI_ext. If RSI_ext is not used following Preset Early Warning Threshold would apply: Output Decoupling (Cout) The NCV8667 is a stable component and does not require a minimum Equivalent Series Resistance (ESR) for the output capacitor. Stability region of ESR vs. Output Current is shown in Figure 15. The minimum output decoupling value is 2.2 mF and can be augmented to fulfill stringent load transient requirements. The regulator works with ceramic chip capacitors as well as tantalum devices. Larger values improve noise rejection and load transient response. Enable Operation The Enable pin will turn the regulator on or off. The threshold limits are covered in the electrical characteristics table in this data sheet. EARLY WARNING PRESET OPTIONS Reset Delay Time Select Selection of the NCV8667yz devices and the state of the DT pin determines the available Reset Delay times. The part is designed for use with DT tied to ground or OUT, but may be controlled by any logic signal which provides a threshold between 0.8 V and 2 V. The default condition for an open DT pin is the slower Reset time (DT = GND condition). Times are in pairs and are highlighted in the chart below. Consult factory for availability. The Delay Time select (DT) pin is logic level controlled and provides Reset Delay time per the chart. Note the DT pin is sampled only when RO is low, and changes to the DT pin when RO is high will not effect the reset delay time. Part Number RSI1 (internal) RSI2 (internal) Input Voltage Early Warning Threshold Low (Typ) (RSI_ext not used) NCV8667y2 480 kW 520 kW 2.37 V Practically only preset options above 4.5 V can be used without RSI_ext due to minimum operating input voltage value limitation. For other preset options the trip point has to be adjusted externally using RSI_ext resistor connected between input monitor SI and GND (see Figure 1). For other preset options RSI_ext has to be used to achieve Vin_EW(th) > 5.5 V (minimum operating input voltage value) . The value for RSI_ext is recommended to be selected in range from 50 kW to 250 kW and the trip point can be shifted according to Figure 26. In case of RSI_ext values higher than 200 kW two resistors in series could be used in order to eliminate leakage current of the resistor and hence ensure precision of its resistance value. The higher is RSI_ext the lower is overall Quiescent Current of the application (see Figure 27). General formulas for calculation of Vin_EW(th)Low or RSI_ext Reset Operation A reset signal is provided on the Reset Output (RO) pin to provide feedback to the microprocessor of an out of regulation condition. The timing diagram of reset function is shown in Figure 28. This is in the form of a logic signal on RO. Output voltage conditions below the RESET threshold cause RO to go low. The RO integrity is maintained down to Vout = 1.0 V. The Reset Output (RO) circuitry includes internal pull−up connected to the output (Vout) No external pull−up is necessary. http://onsemi.com 15 NCV8667 ǒ for selected preset Early Warning options are described by Equations 1 and 2. ȡ ȧ Ȣ V in_EW(th)_Low + 1.1 1 ) ȡ ȧR Ȣ ǒRSI2 ) RSI_extǓȣ R SI1 R SI2 R SI1 R SI_ext + 1.1 SI2 R SI1 + R SI2 ǒVin_EW(th)_Low ȧ) 0.25 Ȥ (eq. 1) R ȣ ȧ * 0.25Ǔ * 1.1 10 Ȥ SI2 6 Where: RSI1,RSI2 − internal EW divider resistors (see Figure 3) (select values from Early Warning Preset Options table) RSI−ext − external resistor connected between SI and GND (recommended to be selected from 50 kW to 250 W) If Adjustable Early Warning Threshold option (NCV8667y0) is used EW threshold is adjusted by external resistor divider. (See Figure 2) The values for RSI1 and RSI2 are selected for a typical threshold of 1.2 V on the SI pin according to Equations 3 and 4, where Vin_EW(th) is demanded value of input voltage at which Early Warning signal has to be generated. RSI2 is recommended to be selected in range of 100 kW to 1 MW. The higher are values of resistors RSI1 and RSI2 the lower is current flowing through the resistor divider, however this also increases a delay between Input voltage and SI input voltage caused by charging SI input capacitance with higher RC constant. The delay can be lowered by decreasing the resistors values with consequence of resistor divider current is increased. ǒ Ǔ R SI2 (eq. 4) V out V SI V SI,Low V RO V SO T WARNING (eq. 3) Figure 30. SO Warning Timing Diagram Sense Input V SI,High V SI,Low Sense Output Ǔ *1 The Sense Output is from an open drain driver with an internal 30 kW pull up resistor to Vout. Figure 26 shows the SO Monitor timing waveforms as a result of the circuit depicted in Figure 1. If the input voltage decreases the output voltage decreases as well. If the SI input low threshold voltage is crossed it causes the voltage on the SO output goes low sending a warning signal to the microprocessor that a reset signal may occur in a short period of time. TWARNING is the time the microprocessor has to complete the function it is currently working on and get ready for the reset shutdown signal. (eq. 2) V in_EW(th) + 1.25 1 ) 1.2 Sense Output R SI_ext R SI1 V in_EW(th) t t PSOLH t PSOHL High Low t Figure 31. Sense Input to Sense Output Timing Diagram http://onsemi.com 16 NCV8667 Thermal Considerations 170 P D(MAX) + ƪTJ(MAX) * TAƫ RqJA, THERMAL RESISTANCE (°C/W) As power in the NCV8667 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. When the NCV8667 has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power applications. The maximum dissipation the NCV8667 can handle is given by: 160 150 (eq. 5) I out ) I q I outǓ 100 SO−14 1 oz 90 SO−14 2 oz 80 70 0 100 200 300 400 500 600 COPPER HEAT SPREADER AREA (mm2) 700 Figure 32. Thermal Resistance vs. PCB Copper Area Hints Vin and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external components, especially the output capacitor, as close as possible to the NCV8667 and make traces as short as possible. (eq. 6) or P D(MAX) ) ǒV out SO−8 2 oz 110 Since TJ is not recommended to exceed 150°C, then the NCV8667 soldered on 645 mm2, 1 oz copper area, FR4 can dissipate up to 1.33 W when the ambient temperature (TA) is 25°C. See Figure 29 for RthJA versus PCB area. The power dissipated by the NCV8667 can be calculated from the following equations: V in(MAX) [ SO−8 1 oz 130 120 R qJA P D [ V inǒI q@I outǓ ) I outǒV in * V outǓ 140 (eq. 7) http://onsemi.com 17 NCV8667 ORDERING INFORMATION Output Voltage Reset Delay Time DT = GND/Vout Reset Threshold (Typ) Input Voltage Early Warning Threshold Low (Typ) RSI_ext = 150 kW Marking Package Shipping† NCV866710D150R2G 5.0 V 8/128 ms 93 % N/A 667105 SO−8 (Pb−Free) 2500 / Tape & Reel NCV866710D250R2G 5.0 V 8/128 ms 93 % N/A V86671050G SO−14 (Pb−Free) 2500 / Tape & Reel NCV866752D250R2G 5.0 V 16/32 ms 93 % 5.89 V V86675250G SO−14 (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 18 NCV8667 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 19 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 NCV8667 PACKAGE DIMENSIONS SOIC−14 CASE 751A−03 ISSUE J −A− 14 8 −B− P 7 PL 0.25 (0.010) M B M 7 1 G −T− 0.25 (0.010) M T B S A DIM A B C D F G J K M P R J M K D 14 PL F R X 45 _ C SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. S MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 SOLDERING FOOTPRINT 7X 7.04 14X 1.52 1 14X 0.58 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 20 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCV8667/D