SiC MOSFETs The real breakthrough in high-voltage switching Industry-leading 200 °C rating for more efficient and simplified designs Based on the advanced and innovative properties of wide bandgap materials, ST’s silicon carbide (SiC) MOSFETs feature very low RDS(on) per area for the 1200 V rating combined with excellent switching performance, translating into more efficient and compact designs. ST is among the first companies to produce high-voltage SiC MOSFETs. This new family features the industry’s highest temperature rating of 200 °C for improved thermal design of power electronics systems. Compared to silicon MOSFETs, SiC MOSFETs also feature significantly reduced switching losses with minimal variation versus the temperature. KEY FEATURES TARGETED APPLICATIONS • Very low switching losses • Solar inverters • Low power losses at high • High-frequency power supplies temperatures • Motor drives • Higher operating temperature (200 ˚C) • Body diode with no recovery losses • Easy to drive KEY BENEFITS • Smaller form factor and lighter systems • Reduced size/cost of passive components • Higher system efficiency • Reduced cooling requirements and heatsink size www.st.com/sicmos SiC MOSFET VERSUS SILICON IGBT Table 1 compares the 1200 V, 80 mΩ SCT30N120 SiC MOSFET with a trench field-stop IGBT of the same voltage rating and equivalent RON. You can see that the SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designers to operate at very high switching frequencies, reducing the size of passive components for smaller form factors. In addition, the variation of EON and EOFF with temperature is very small. For example, the EOFF of the SiC MOSFET FIGURE 1 - ON-RESISTANCE VARIATION VERSUS TEMPERATURE TABLE 1 - SWITCHING LOSS COMPARISON SCT30N120 SiC MOSFET Trench field-stop IGBT EON (µJ) @ 20 A, 900 V EOFF (µJ) @ 20 A, 900 V Normalized on-resistance versus temperature Chip size 25 °C 175 °C 25 °C 175 °C 2 2.4 725* 965* 245 307 0.45 1.95 2.35 2140 3100 980 1850 1 Note: * EON measured using the SiC intrinsic body diode +25% from 25 °C to 175 °C +90% from 25 °C to 175 °C Normalized RDS(on) Device VON typ (V) VON typ (V) @ 25 °C, @ 175 °C, 20 A 20 A increases only by 25% as the temperature rises from 25 °C to 175 °C, while the EOFF of the IGBT increases by 90%. Also the on-state resistance variation versus temperature is very tight, as shown in Figure 1. 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 ST SiC MOSFET SiC MOSFET Competitor B SiC MOSFET Competitor A 0 25 50 75 100 125 150 175 200 225 T (°C) When tested on a CCM 5 kW boost converter application board at a switching frequency of 100 kHz, ST’s SiC MOSFET solution provides the highest efficiency, as can be seen in the figure below. Efficiency: SiC versus Si @ 100 kHz 99 98.8 98.6 98.4 98.2 98 97.8 97.6 97.4 97.2 97 NOFF 80 mohm SiC JFET + SiC diodes SCT30N120 + SiC diodes Best IGBT 1.2 KV 25 A + SiC diodes 1 2 3 4 POUT (kW) 5 6 At 100 kHz, the Si IGBT is not a viable solution. The SiC MOSFET represents the best alternative. SIC MOSFETS Part number VDSS (V) ID max (A) (@ 25 °C) RDS(on) max (mΩ) (@ VGS = 20 V) Total gate charge Qg typ (nC) Tj max (°C) Package SCT30N120 1200 SCT20N120 1200 45 0.1 105 200 HiP247™ 25 0.29 45 200 HiP247™ © STMicroelectronics - February 2015 - Printed in United Kingdom - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies All other names are the property of their respective owners Order code: FLSCT30N1200215 For more information on ST products and solutions, visit www.st.com